NL144803C - - Google Patents
Info
- Publication number
- NL144803C NL144803C NL144803DA NL144803C NL 144803 C NL144803 C NL 144803C NL 144803D A NL144803D A NL 144803DA NL 144803 C NL144803 C NL 144803C
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
- H01L21/3167—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself of anodic oxidation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroplating Methods And Accessories (AREA)
- Weting (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11167A US2560792A (en) | 1948-02-26 | 1948-02-26 | Electrolytic surface treatment of germanium |
Publications (1)
Publication Number | Publication Date |
---|---|
NL144803C true NL144803C (US07582779-20090901-C00044.png) |
Family
ID=21749154
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL144803D NL144803C (US07582779-20090901-C00044.png) | 1948-02-26 | ||
NL84057D NL84057C (US07582779-20090901-C00044.png) | 1948-02-26 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL84057D NL84057C (US07582779-20090901-C00044.png) | 1948-02-26 |
Country Status (3)
Country | Link |
---|---|
US (1) | US2560792A (US07582779-20090901-C00044.png) |
GB (1) | GB694022A (US07582779-20090901-C00044.png) |
NL (2) | NL84057C (US07582779-20090901-C00044.png) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2617865A (en) * | 1948-06-17 | 1952-11-11 | Bell Telephone Labor Inc | Semiconductor amplifier and electrode structures therefor |
NL82014C (US07582779-20090901-C00044.png) * | 1949-11-30 | |||
US2660696A (en) * | 1950-05-10 | 1953-11-24 | Hazeltine Research Inc | Crystal contact device |
US2697269A (en) * | 1950-07-24 | 1954-12-21 | Bell Telephone Labor Inc | Method of making semiconductor translating devices |
US2840494A (en) * | 1952-12-31 | 1958-06-24 | Henry W Parker | Manufacture of transistors |
US2798189A (en) * | 1953-04-16 | 1957-07-02 | Sylvania Electric Prod | Stabilized semiconductor devices |
US2748325A (en) * | 1953-04-16 | 1956-05-29 | Rca Corp | Semi-conductor devices and methods for treating same |
BE529342A (US07582779-20090901-C00044.png) * | 1953-06-04 | |||
NL109229C (US07582779-20090901-C00044.png) * | 1953-07-28 | 1900-01-01 | ||
US2845371A (en) * | 1953-11-27 | 1958-07-29 | Raytheon Mfg Co | Process of producing junctions in semiconductors |
BE539649A (US07582779-20090901-C00044.png) * | 1954-04-01 | |||
DE1082786B (de) * | 1954-05-06 | 1960-06-02 | Siemens Ag | Verfahren und Einrichtung zur formgebenden elektrolytischen Bearbeitung von Koerpernaus halbleitendem oder leitendem Material |
USRE25633E (en) * | 1954-09-29 | 1964-08-25 | Process for making fused junction | |
US2885608A (en) * | 1954-12-03 | 1959-05-05 | Philco Corp | Semiconductive device and method of manufacture |
NL105600C (US07582779-20090901-C00044.png) * | 1956-06-16 | |||
BE621486A (US07582779-20090901-C00044.png) * | 1961-08-19 | |||
US3312603A (en) * | 1964-04-06 | 1967-04-04 | Robert D Wales | Production of oxidic films on germanium |
US3462311A (en) * | 1966-05-20 | 1969-08-19 | Globe Union Inc | Semiconductor device having improved resistance to radiation damage |
US3445353A (en) * | 1966-07-11 | 1969-05-20 | Western Electric Co | Electrolyte and method for anodizing film forming metals |
US4006063A (en) * | 1970-10-08 | 1977-02-01 | Minas Ensanian | Method for measuring surface characteristics of metals and metalloids |
US4032418A (en) * | 1975-01-16 | 1977-06-28 | Jovan Antula | Method of introducing impurities into a semiconductor |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1751362A (en) * | 1926-06-17 | 1930-03-18 | Ruben Rectifier Corp | Electric-current rectifier |
US2419561A (en) * | 1941-08-20 | 1947-04-29 | Gen Electric Co Ltd | Crystal contact of which one element is mainly silicon |
US2356094A (en) * | 1943-02-11 | 1944-08-15 | Fed Telephone & Radio Corp | Method of treating selenium elements |
BE467418A (US07582779-20090901-C00044.png) * | 1943-03-22 | |||
US2447829A (en) * | 1946-08-14 | 1948-08-24 | Purdue Research Foundation | Germanium-helium alloys and rectifiers made therefrom |
NL75792C (US07582779-20090901-C00044.png) * | 1948-05-19 |
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0
- NL NL144803D patent/NL144803C/xx active
- NL NL84057D patent/NL84057C/xx active
-
1948
- 1948-02-26 US US11167A patent/US2560792A/en not_active Expired - Lifetime
-
1949
- 1949-02-25 GB GB5202/49A patent/GB694022A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB694022A (en) | 1953-07-15 |
NL84057C (US07582779-20090901-C00044.png) | |
US2560792A (en) | 1951-07-17 |