NL144803C - - Google Patents

Info

Publication number
NL144803C
NL144803C NL144803DA NL144803C NL 144803 C NL144803 C NL 144803C NL 144803D A NL144803D A NL 144803DA NL 144803 C NL144803 C NL 144803C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL144803C publication Critical patent/NL144803C/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02258Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314Inorganic layers
    • H01L21/316Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H01L21/3167Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself of anodic oxidation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Weting (AREA)
  • Formation Of Insulating Films (AREA)
NL144803D 1948-02-26 NL144803C (US06312121-20011106-C00033.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11167A US2560792A (en) 1948-02-26 1948-02-26 Electrolytic surface treatment of germanium

Publications (1)

Publication Number Publication Date
NL144803C true NL144803C (US06312121-20011106-C00033.png)

Family

ID=21749154

Family Applications (2)

Application Number Title Priority Date Filing Date
NL144803D NL144803C (US06312121-20011106-C00033.png) 1948-02-26
NL84057D NL84057C (US06312121-20011106-C00033.png) 1948-02-26

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL84057D NL84057C (US06312121-20011106-C00033.png) 1948-02-26

Country Status (3)

Country Link
US (1) US2560792A (US06312121-20011106-C00033.png)
GB (1) GB694022A (US06312121-20011106-C00033.png)
NL (2) NL84057C (US06312121-20011106-C00033.png)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2617865A (en) * 1948-06-17 1952-11-11 Bell Telephone Labor Inc Semiconductor amplifier and electrode structures therefor
NL82014C (US06312121-20011106-C00033.png) * 1949-11-30
US2660696A (en) * 1950-05-10 1953-11-24 Hazeltine Research Inc Crystal contact device
US2697269A (en) * 1950-07-24 1954-12-21 Bell Telephone Labor Inc Method of making semiconductor translating devices
US2840494A (en) * 1952-12-31 1958-06-24 Henry W Parker Manufacture of transistors
US2798189A (en) * 1953-04-16 1957-07-02 Sylvania Electric Prod Stabilized semiconductor devices
US2748325A (en) * 1953-04-16 1956-05-29 Rca Corp Semi-conductor devices and methods for treating same
BE529342A (US06312121-20011106-C00033.png) * 1953-06-04
NL109229C (US06312121-20011106-C00033.png) * 1953-07-28 1900-01-01
US2845371A (en) * 1953-11-27 1958-07-29 Raytheon Mfg Co Process of producing junctions in semiconductors
BE539649A (US06312121-20011106-C00033.png) * 1954-04-01
DE1082786B (de) * 1954-05-06 1960-06-02 Siemens Ag Verfahren und Einrichtung zur formgebenden elektrolytischen Bearbeitung von Koerpernaus halbleitendem oder leitendem Material
USRE25633E (en) * 1954-09-29 1964-08-25 Process for making fused junction
US2885608A (en) * 1954-12-03 1959-05-05 Philco Corp Semiconductive device and method of manufacture
NL105600C (US06312121-20011106-C00033.png) * 1956-06-16
BE621486A (US06312121-20011106-C00033.png) * 1961-08-19
US3312603A (en) * 1964-04-06 1967-04-04 Robert D Wales Production of oxidic films on germanium
US3462311A (en) * 1966-05-20 1969-08-19 Globe Union Inc Semiconductor device having improved resistance to radiation damage
US3445353A (en) * 1966-07-11 1969-05-20 Western Electric Co Electrolyte and method for anodizing film forming metals
US4006063A (en) * 1970-10-08 1977-02-01 Minas Ensanian Method for measuring surface characteristics of metals and metalloids
US4032418A (en) * 1975-01-16 1977-06-28 Jovan Antula Method of introducing impurities into a semiconductor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1751362A (en) * 1926-06-17 1930-03-18 Ruben Rectifier Corp Electric-current rectifier
US2419561A (en) * 1941-08-20 1947-04-29 Gen Electric Co Ltd Crystal contact of which one element is mainly silicon
US2356094A (en) * 1943-02-11 1944-08-15 Fed Telephone & Radio Corp Method of treating selenium elements
BE467418A (US06312121-20011106-C00033.png) * 1943-03-22
US2447829A (en) * 1946-08-14 1948-08-24 Purdue Research Foundation Germanium-helium alloys and rectifiers made therefrom
NL75792C (US06312121-20011106-C00033.png) * 1948-05-19

Also Published As

Publication number Publication date
GB694022A (en) 1953-07-15
NL84057C (US06312121-20011106-C00033.png)
US2560792A (en) 1951-07-17

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