MX2012013996A - Cristalizacion de escaneo de linea de un solo escaneo con el uso de elementos de escaneo superpuestos. - Google Patents
Cristalizacion de escaneo de linea de un solo escaneo con el uso de elementos de escaneo superpuestos.Info
- Publication number
- MX2012013996A MX2012013996A MX2012013996A MX2012013996A MX2012013996A MX 2012013996 A MX2012013996 A MX 2012013996A MX 2012013996 A MX2012013996 A MX 2012013996A MX 2012013996 A MX2012013996 A MX 2012013996A MX 2012013996 A MX2012013996 A MX 2012013996A
- Authority
- MX
- Mexico
- Prior art keywords
- scan
- thin film
- laser beam
- crystallization
- scan velocity
- Prior art date
Links
- 238000002425 crystallisation Methods 0.000 title abstract 3
- 230000008025 crystallization Effects 0.000 title abstract 3
- 239000010409 thin film Substances 0.000 abstract 5
- 238000000034 method Methods 0.000 abstract 2
- 238000001816 cooling Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/08—Production of homogeneous polycrystalline material with defined structure from liquids by zone-melting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/354—Working by laser beam, e.g. welding, cutting or boring for surface treatment by melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
- C30B1/06—Recrystallisation under a temperature gradient
- C30B1/08—Zone recrystallisation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
- C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/04—After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Electromagnetism (AREA)
- Thermal Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
La descripción se relaciona con métodos y sistemas para la cristalización de escaneo de línea, de un solo escaneo con el uso de elementos de escaneo superpuestos. En un aspecto, el método incluye generar una pluralidad de impulsos de rayo láser a partir de una fuente de láser con impulsos, en donde cada impulso de rayo láser tiene una corriente seleccionada para fundir la película delgada y luego del enfriamiento, introduce la cristalización en la película delgada, dirigir un primer impulso de rayo láser sobre la película delgada con el uso de una primera trayectoria de rayo, avanzar la película delgada a una primera velocidad de escaneo constante en una primera dirección y desviar un segundo impulso de rayo láser desde la primera trayectoria de rayo a una segunda trayectoria de rayo con el uso de un elemento de escaneo óptico, de modo que la desviación resulta en que la película experimenta una segunda velocidad de escaneo de los impulsos de rayo láser con relación a la película delgada, en donde la segunda velocidad de escaneo es más baja que la primera velocidad de escaneo.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US35106510P | 2010-06-03 | 2010-06-03 | |
| US35429910P | 2010-06-14 | 2010-06-14 | |
| PCT/US2010/062513 WO2011152854A1 (en) | 2010-06-03 | 2010-12-30 | Single-scan line-scan crystallization using superimposed scanning elements |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MX2012013996A true MX2012013996A (es) | 2013-04-11 |
Family
ID=45067013
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MX2012013996A MX2012013996A (es) | 2010-06-03 | 2010-12-30 | Cristalizacion de escaneo de linea de un solo escaneo con el uso de elementos de escaneo superpuestos. |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20130201634A1 (es) |
| EP (1) | EP2576873A4 (es) |
| JP (1) | JP2013527120A (es) |
| KR (1) | KR20130082449A (es) |
| CN (1) | CN102918186A (es) |
| MX (1) | MX2012013996A (es) |
| TW (1) | TW201145356A (es) |
| WO (1) | WO2011152854A1 (es) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102232239A (zh) * | 2008-11-14 | 2011-11-02 | 纽约市哥伦比亚大学理事会 | 用于薄膜结晶的系统和方法 |
| US9111757B2 (en) | 2013-04-25 | 2015-08-18 | Apple Inc. | Display having a backplane with interlaced laser crystallized regions |
| CN105336294B (zh) | 2014-08-12 | 2018-01-30 | 上海和辉光电有限公司 | 有机电致发光显示器 |
| KR101704553B1 (ko) * | 2015-01-12 | 2017-02-23 | 한국생산기술연구원 | 조형광원어레이 및 폴리곤미러를 구비하는 입체조형장비의 헤드장치 및 이를 이용하는 조형평면 스캐닝 방법 |
| US10016843B2 (en) * | 2015-03-20 | 2018-07-10 | Ultratech, Inc. | Systems and methods for reducing pulsed laser beam profile non-uniformities for laser annealing |
| EP3538940A1 (en) * | 2016-11-12 | 2019-09-18 | The Trustees of Columbia University in the City of New York | Microscopy devices, methods and systems |
| US11260472B2 (en) | 2016-12-30 | 2022-03-01 | Electro Scientific Industries, Inc. | Method and system for extending optics lifetime in laser processing apparatus |
| WO2018170091A1 (en) * | 2017-03-16 | 2018-09-20 | Thermo Electron Scientific Instruments Llc | System and method for an interferometer resistant to externally applied forces |
| JP2019025539A (ja) * | 2017-08-04 | 2019-02-21 | 株式会社ディスコ | レーザー加工装置 |
| WO2019075454A1 (en) * | 2017-10-13 | 2019-04-18 | The Trustees Of Columbia University In The City Of New York | SYSTEMS AND METHODS FOR BEAM POINT CRYSTALLIZATION AND LINEAR BEAM |
| JP6595558B2 (ja) * | 2017-10-30 | 2019-10-23 | ファナック株式会社 | レーザ加工システム |
| KR102635709B1 (ko) | 2018-11-08 | 2024-02-15 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
| TWI755963B (zh) * | 2020-06-23 | 2022-02-21 | 國立成功大學 | 形成三維微結構的方法和裝置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7318866B2 (en) * | 2003-09-16 | 2008-01-15 | The Trustees Of Columbia University In The City Of New York | Systems and methods for inducing crystallization of thin films using multiple optical paths |
| JP2005129769A (ja) * | 2003-10-24 | 2005-05-19 | Hitachi Ltd | 半導体薄膜の改質方法、改質した半導体薄膜とその評価方法、およびこの半導体薄膜で形成した薄膜トランジスタ、並びにこの薄膜トランジスタを用いて構成した回路を有する画像表示装置 |
| EP1537938A3 (en) * | 2003-12-02 | 2009-02-18 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device |
| US20090218577A1 (en) * | 2005-08-16 | 2009-09-03 | Im James S | High throughput crystallization of thin films |
| KR101250629B1 (ko) * | 2005-08-16 | 2013-04-03 | 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 | 고주파 레이저를 사용하는 박막의 균일한 순차적 측면 고상화를 위한 시스템 및 방법 |
| JP2009518864A (ja) * | 2005-12-05 | 2009-05-07 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | 膜を加工するためのシステム及び方法並びに薄膜 |
| EP2130234B1 (en) * | 2007-02-27 | 2014-10-29 | Carl Zeiss Laser Optics GmbH | Continuous coating installation and method for producing crystalline thin films |
-
2010
- 2010-12-30 MX MX2012013996A patent/MX2012013996A/es not_active Application Discontinuation
- 2010-12-30 KR KR1020127031623A patent/KR20130082449A/ko not_active Application Discontinuation
- 2010-12-30 JP JP2013513148A patent/JP2013527120A/ja active Pending
- 2010-12-30 WO PCT/US2010/062513 patent/WO2011152854A1/en active Application Filing
- 2010-12-30 EP EP10852635.1A patent/EP2576873A4/en not_active Withdrawn
- 2010-12-30 US US13/701,663 patent/US20130201634A1/en not_active Abandoned
- 2010-12-30 CN CN2010800671928A patent/CN102918186A/zh active Pending
-
2011
- 2011-03-03 TW TW100107181A patent/TW201145356A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011152854A1 (en) | 2011-12-08 |
| EP2576873A4 (en) | 2013-11-27 |
| TW201145356A (en) | 2011-12-16 |
| JP2013527120A (ja) | 2013-06-27 |
| CN102918186A (zh) | 2013-02-06 |
| EP2576873A1 (en) | 2013-04-10 |
| KR20130082449A (ko) | 2013-07-19 |
| US20130201634A1 (en) | 2013-08-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FA | Abandonment or withdrawal |