KR970054065A - Capacitor Manufacturing Method - Google Patents
Capacitor Manufacturing Method Download PDFInfo
- Publication number
- KR970054065A KR970054065A KR1019950058877A KR19950058877A KR970054065A KR 970054065 A KR970054065 A KR 970054065A KR 1019950058877 A KR1019950058877 A KR 1019950058877A KR 19950058877 A KR19950058877 A KR 19950058877A KR 970054065 A KR970054065 A KR 970054065A
- Authority
- KR
- South Korea
- Prior art keywords
- polysilicon
- forming
- nitride film
- film
- capacitor
- Prior art date
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- Semiconductor Integrated Circuits (AREA)
Abstract
본 발명은 커패시터 제조방법에 관한 것으로 특히, 커패시터 용량을 증가시키는데 적합하도록 한 커패시터 제조방법에 관한 것이다.The present invention relates to a method of manufacturing a capacitor, and more particularly, to a method of manufacturing a capacitor adapted to increase the capacitor capacity.
이를 위한 본 발명의 커패시터 제조방법은 기판위에 폴리 실리콘을 형성하는 단계; 상기 폴리 실리콘위에 질화막을 형성하는 단계; 상기 질화막 및 폴리실리콘을 열산화하여 상기 폴리 실리콘의 그레인 사이에 산화막을 형성하는 단계; 상기 질화막 및 폴리실리콘을 열산화 하여 상기 폴리 실리콘의 그레인 사이에 산화막을 형성하는 단계; 상기 질화막 및 산화막을 제거하여 하부 전극을 형성하는 단게; 상기 하부 전극위에 유전막을 형성하는 단계; 상기 유전막위에 상부 전극을 형성하는 단계를 포함하여 이루어진다. 따라서, 일렉트릭 필드(Electric Field) 의 집중이 감소되어 신뢰성이 향상된다.Capacitor manufacturing method of the present invention for this purpose comprises the steps of forming polysilicon on a substrate; Forming a nitride film on the polysilicon; Thermally oxidizing the nitride film and the polysilicon to form an oxide film between the grains of the polysilicon; Thermally oxidizing the nitride film and the polysilicon to form an oxide film between the grains of the polysilicon; Removing the nitride film and the oxide film to form a lower electrode; Forming a dielectric film on the lower electrode; And forming an upper electrode on the dielectric layer. Therefore, the concentration of the electric field is reduced and the reliability is improved.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제2도는 본 발명의 커패시터 제조공정 단면도.2 is a cross-sectional view of a capacitor manufacturing process of the present invention.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950058877A KR970054065A (en) | 1995-12-27 | 1995-12-27 | Capacitor Manufacturing Method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950058877A KR970054065A (en) | 1995-12-27 | 1995-12-27 | Capacitor Manufacturing Method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR970054065A true KR970054065A (en) | 1997-07-31 |
Family
ID=66618687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950058877A KR970054065A (en) | 1995-12-27 | 1995-12-27 | Capacitor Manufacturing Method |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR970054065A (en) |
-
1995
- 1995-12-27 KR KR1019950058877A patent/KR970054065A/en not_active Application Discontinuation
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E601 | Decision to refuse application |