KR970013143A - 본딩용 금합금 세선 및 그 제조방법 - Google Patents

본딩용 금합금 세선 및 그 제조방법 Download PDF

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Publication number
KR970013143A
KR970013143A KR1019950036609A KR19950036609A KR970013143A KR 970013143 A KR970013143 A KR 970013143A KR 1019950036609 A KR1019950036609 A KR 1019950036609A KR 19950036609 A KR19950036609 A KR 19950036609A KR 970013143 A KR970013143 A KR 970013143A
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South Korea
Prior art keywords
gold alloy
kgf
young
modulus
elongation
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KR1019950036609A
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English (en)
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이치미쭈 이타바시
토시타카 미무라
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사토오 케이지
타나카 덴시 코오교오 카부시키가이샤
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Publication of KR970013143A publication Critical patent/KR970013143A/ko
Priority to KR1019990034335A priority Critical patent/KR100273702B1/ko

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Abstract

반도체장치의 소형화, 고밀도화의 대응에 극히 유용한 반도체칩의 본딩용 금합금 세선 및 그 제조방법을 제공한다. 고순도금에 Pt, Pd, Be, Ge, Ca, La, Y, Eu를 규정량 함유하고, 또한 신장률3∼8%, 영률 6800∼9000kgf/㎟의 금합금 세선으로 하였으므로, 선의 지름이 작아도 강도가 높으므로 배선시나 사용중의 단선의 비율이 적고, 고온방치 후의 접합강도의 열화가 작으며, 진동을 받은 때의 단선을 억제할 수 있다. 용해주조공정에서, 본 발명의 조성으로 되는 금합금의 녹인 용액(1)을 도가니(2)내에서 도가니 하단으로부터 상단으로 향해서 냉각하므로서, 전기한 합금조성에서 또한 신장률이 3∼8%, 영률이 6800∼9000kgf/㎟의 금합금 세선을 확실 또한 비교적 쉽게 얻을 수 있다.

Description

본딩용 금합금 세선 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 관한 본딩용 금합금 세선의 잉곳을 얻는 방법의 일례를 표시하는 간략도

Claims (2)

  1. 고속도금에 백금(Pt), 팔라듐(Pd)중에서 적어도 1종을 0.1∼2.2중량% 함유하고, 더욱 Be, Ge, Ca, La, Y, Eu 중에서 적어도 1종을 0.0001∼0.005중량% 함유하여, 또 신장률이 3∼8%, 영률이 6800∼9000kgf/㎟인 것을 특징으로 하는 반도체 칩 본딩용 금합금 세선.
  2. 고속도금에 백금(Pt), 팔라듐(Pd)중에서 적어도 1종을 0.1∼2.2중량% 함유하고, 더욱 Be, Ge, Ca, La, Y, Eu 중에서 적어도 1종을 0.0001∼0.005중량% 함유하는 금합금을 용해주조하여 얻어진 잉곳에 거칠은 가공(粗加工), 신선(伸線)가공, 열처리를 실시하여 금합금 세선을 제조하는 방법에 있어서, 전기한 용해주조방법이, 용해된 금합금을 도가니의 하단으로부터 상단을 향해서 도가니 내에서 냉각하는 것을 특징으로 하는 신장률이 3∼8%, 영률이 6800∼9000kgf/㎟인 반도체칩 본딩용 금합금 세선의 제조방법.
KR1019950036609A 1995-08-23 1995-10-23 본딩용 금합금 세선 및 그 제조방법 KR970013143A (ko)

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