KR970003733B1 - 보호회로를 갖는 집적회로 - Google Patents
보호회로를 갖는 집적회로 Download PDFInfo
- Publication number
- KR970003733B1 KR970003733B1 KR1019880005077A KR880005077A KR970003733B1 KR 970003733 B1 KR970003733 B1 KR 970003733B1 KR 1019880005077 A KR1019880005077 A KR 1019880005077A KR 880005077 A KR880005077 A KR 880005077A KR 970003733 B1 KR970003733 B1 KR 970003733B1
- Authority
- KR
- South Korea
- Prior art keywords
- region
- integrated circuit
- semiconductor
- conductivity type
- semiconductor region
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims description 91
- 239000000758 substrate Substances 0.000 claims description 58
- 238000000407 epitaxy Methods 0.000 claims description 12
- 230000005669 field effect Effects 0.000 claims description 9
- 238000002955 isolation Methods 0.000 claims description 8
- 238000000926 separation method Methods 0.000 claims description 4
- 238000010521 absorption reaction Methods 0.000 claims description 2
- 238000009826 distribution Methods 0.000 claims description 2
- 238000012360 testing method Methods 0.000 description 34
- 238000010586 diagram Methods 0.000 description 13
- 230000001681 protective effect Effects 0.000 description 13
- 230000008901 benefit Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000004088 simulation Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000010998 test method Methods 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- PQVHMOLNSYFXIJ-UHFFFAOYSA-N 4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-1-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]pyrazole-3-carboxylic acid Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C=1C(=NN(C=1)CC(N1CC2=C(CC1)NN=N2)=O)C(=O)O PQVHMOLNSYFXIJ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3714647A DE3714647C2 (de) | 1987-05-02 | 1987-05-02 | Integrierte Schaltungsanordnung |
| DEP3714647.5 | 1987-05-02 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR880014674A KR880014674A (ko) | 1988-12-24 |
| KR970003733B1 true KR970003733B1 (ko) | 1997-03-21 |
Family
ID=6326697
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019880005077A KR970003733B1 (ko) | 1987-05-02 | 1988-05-02 | 보호회로를 갖는 집적회로 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4984031A (de) |
| EP (1) | EP0293575B1 (de) |
| JP (1) | JP2823562B2 (de) |
| KR (1) | KR970003733B1 (de) |
| DE (2) | DE3714647C2 (de) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5276350A (en) * | 1991-02-07 | 1994-01-04 | National Semiconductor Corporation | Low reverse junction breakdown voltage zener diode for electrostatic discharge protection of integrated circuits |
| JP3155134B2 (ja) * | 1993-10-27 | 2001-04-09 | ローム株式会社 | 半導体装置 |
| JP3217560B2 (ja) * | 1993-11-15 | 2001-10-09 | 株式会社東芝 | 半導体装置 |
| JP2611639B2 (ja) * | 1993-11-25 | 1997-05-21 | 日本電気株式会社 | 半導体装置 |
| US6111734A (en) * | 1996-03-07 | 2000-08-29 | Dallas Semiconductor Corporation | Electrostatic discharge protection circuits and application |
| US6304126B1 (en) * | 1997-09-29 | 2001-10-16 | Stmicroelectronics S.A. | Protection circuit that can be associated with a filter |
| US6791161B2 (en) | 2002-04-08 | 2004-09-14 | Fabtech, Inc. | Precision Zener diodes |
| KR102576210B1 (ko) * | 2016-07-05 | 2023-09-08 | 삼성전자주식회사 | 반도체 장치 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1209271A (en) * | 1967-02-27 | 1970-10-21 | Hitachi Ltd | Improvements in semiconductor devices |
| US3562547A (en) * | 1967-04-17 | 1971-02-09 | Ibm | Protection diode for integrated circuit |
| US3619725A (en) * | 1970-04-08 | 1971-11-09 | Rca Corp | Electrical fuse link |
| JPS5191681A (de) * | 1975-01-22 | 1976-08-11 | ||
| US4042950A (en) * | 1976-03-01 | 1977-08-16 | Advanced Micro Devices, Inc. | Platinum silicide fuse links for integrated circuit devices |
| JPS6112691Y2 (de) * | 1977-02-08 | 1986-04-19 | ||
| DE2951931C2 (de) * | 1979-12-21 | 1981-10-29 | Siemens AG, 1000 Berlin und 8000 München | Anordnung zum Schutz von bipolaren, integrierten Halbleiterschaltungen vor elektrischen Entladungen |
| JPS5715459A (en) * | 1980-07-01 | 1982-01-26 | Fujitsu Ltd | Semiconductor integrated circuit |
| DE3026361A1 (de) * | 1980-07-11 | 1982-02-04 | Siemens AG, 1000 Berlin und 8000 München | Aus mindestens zwei monolitisch zusammengefassten mis-feldeffekttransistoren bestehender elektrischer widerstand fuer integrierte halbleiterschaltungen |
| US4405933A (en) * | 1981-02-04 | 1983-09-20 | Rca Corporation | Protective integrated circuit device utilizing back-to-back zener diodes |
| US4507756A (en) * | 1982-03-23 | 1985-03-26 | Texas Instruments Incorporated | Avalanche fuse element as programmable device |
| US4491860A (en) * | 1982-04-23 | 1985-01-01 | Signetics Corporation | TiW2 N Fusible links in semiconductor integrated circuits |
| JPS5992557A (ja) * | 1982-11-18 | 1984-05-28 | Nec Corp | 入力保護回路付半導体集積回路 |
| JPS59107555A (ja) * | 1982-12-03 | 1984-06-21 | Fujitsu Ltd | 半導体装置 |
| JPS6196757A (ja) * | 1984-10-17 | 1986-05-15 | Nec Corp | 半導体装置 |
| DE3688034T2 (de) * | 1985-04-08 | 1993-06-24 | Sgs Thomson Microelectronics | Vor elektrostatischen entladungen geschuetzte eingangsschaltung. |
| JP2580571B2 (ja) * | 1985-07-31 | 1997-02-12 | 日本電気株式会社 | 入力保護回路 |
| GB2179494B (en) * | 1985-08-09 | 1989-07-26 | Plessey Co Plc | Protection structures for integrated circuits |
| JPS6271275A (ja) * | 1985-09-25 | 1987-04-01 | Toshiba Corp | 半導体集積回路 |
| JPS61183550U (de) * | 1986-04-03 | 1986-11-15 | ||
| JPS63128656A (ja) * | 1986-11-18 | 1988-06-01 | Sanyo Electric Co Ltd | 混成集積回路 |
| JPH0766957B2 (ja) * | 1986-12-12 | 1995-07-19 | 三菱電機株式会社 | 半導体集積回路装置の静電破壊防止装置 |
-
1987
- 1987-05-02 DE DE3714647A patent/DE3714647C2/de not_active Expired - Fee Related
-
1988
- 1988-04-07 EP EP88105515A patent/EP0293575B1/de not_active Expired - Lifetime
- 1988-04-07 DE DE3850303T patent/DE3850303D1/de not_active Expired - Lifetime
- 1988-04-29 US US07/188,554 patent/US4984031A/en not_active Expired - Fee Related
- 1988-05-02 JP JP63107756A patent/JP2823562B2/ja not_active Expired - Lifetime
- 1988-05-02 KR KR1019880005077A patent/KR970003733B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| EP0293575A2 (de) | 1988-12-07 |
| DE3714647A1 (de) | 1988-11-17 |
| EP0293575A3 (en) | 1990-11-22 |
| DE3850303D1 (de) | 1994-07-28 |
| JP2823562B2 (ja) | 1998-11-11 |
| KR880014674A (ko) | 1988-12-24 |
| EP0293575B1 (de) | 1994-06-22 |
| US4984031A (en) | 1991-01-08 |
| JPS63285963A (ja) | 1988-11-22 |
| DE3714647C2 (de) | 1993-10-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AMND | Amendment | ||
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| AMND | Amendment | ||
| E902 | Notification of reason for refusal | ||
| AMND | Amendment | ||
| E601 | Decision to refuse application | ||
| J2X1 | Appeal (before the patent court) |
Free format text: APPEAL AGAINST DECISION TO DECLINE REFUSAL |
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| G160 | Decision to publish patent application | ||
| B701 | Decision to grant | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20011124 Year of fee payment: 5 |
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| LAPS | Lapse due to unpaid annual fee |