KR960026178A - Contact hole cleaning method of semiconductor device - Google Patents

Contact hole cleaning method of semiconductor device Download PDF

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Publication number
KR960026178A
KR960026178A KR1019940037309A KR19940037309A KR960026178A KR 960026178 A KR960026178 A KR 960026178A KR 1019940037309 A KR1019940037309 A KR 1019940037309A KR 19940037309 A KR19940037309 A KR 19940037309A KR 960026178 A KR960026178 A KR 960026178A
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KR
South Korea
Prior art keywords
ketone
cleaning
contact hole
semiconductor device
alcohol
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Application number
KR1019940037309A
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Korean (ko)
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KR0139388B1 (en
Inventor
남철우
Original Assignee
김주용
현대전자산업 주식회사
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Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940037309A priority Critical patent/KR0139388B1/en
Publication of KR960026178A publication Critical patent/KR960026178A/en
Application granted granted Critical
Publication of KR0139388B1 publication Critical patent/KR0139388B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes

Abstract

본 발명은 반도체 소자의 콘택홀 세정방법에 관한 것으로, 특히 BPSG, TEOS 및 CVD 산화막등으로 이루어진 절연막에 콘택홀을 형성한 후 건식세정으로 콘택홀의 기저부에 형성된 자연산화막을 효과적 제거할 수 있는 반도체 소자의 콘택홀 세정방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cleaning a contact hole of a semiconductor device. In particular, a semiconductor device capable of effectively removing a natural oxide film formed at a base of a contact hole by dry cleaning after forming a contact hole in an insulating film made of BPSG, TEOS, and CVD oxide film, etc. It relates to a contact hole cleaning method.

Description

반도체 소자의 콘택홀 세정방법Contact hole cleaning method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 2 도는 본 발명에 따른 콘택홀 세정방법을 설명하기 위한 단면도. 제 3 도는 본 발명에 따른 콘택홀 세정방법을 설명하기 위한 세정 장치의 구성도.2 is a cross-sectional view for explaining a contact hole cleaning method according to the present invention. 3 is a block diagram of a cleaning device for explaining a contact hole cleaning method according to the present invention.

Claims (9)

반도체 소자의 콘택홀 세정방법에 있어서, 피라냐 세정으로 식각 잔류물을 제거하는 단계와, 무수 HF, 알코올 및 케톤을 캐리어 가스에 의해 세정 챔버로 유입시켜 콘택홀 기저부의 자연 산화막을 제거하고, 불활성 캐리어 가스로 잔류화학물질을 제거하는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 콘택홀 세정방법.A method of cleaning a contact hole in a semiconductor device, the method comprising: removing an etching residue by piranha cleaning, introducing anhydrous HF, alcohol, and ketone into a cleaning chamber by a carrier gas to remove a native oxide film at the bottom of the contact hole, and inert carrier A method of cleaning contact holes in a semiconductor device, the method comprising removing residual chemicals with a gas. 제 1 항에 있어서, 상기 무수 HF, 알코올 및 케톤은 각각 독립된 화학조에 분리되어 저장된 것을 특징으로하는 반도체 소자의 콘택홀 세정방법.The method of claim 1, wherein the anhydrous HF, the alcohol, and the ketone are separately stored in separate chemical baths. 제 1 항에 있어서, 상기 알코올은 에탄올, 프로판올 또는 이소프로필 알콜중의 하나인 것을 특징으로 하는반도체 소자의 콘택홀 세정방법.The method of claim 1, wherein the alcohol is one of ethanol, propanol or isopropyl alcohol. 제 1 항에 있어서, 상기 케톤은 아세톤 또는 메틸에틸케톤중의 하나인 것을 특징으로 하는 반도체 소자의콘택홀 세정방법.2. The method of claim 1, wherein the ketone is one of acetone or methyl ethyl ketone. 제 1 항에 있어서, 상기 캐리어가스는 N2, He 또는 Ar중의 하나인 것을 특징으로 하는 반도체 소자의 콘택홀 세정방법.2. The method of claim 1, wherein the carrier gas is one of N2, He or Ar. 제 2 항에 있어서, 상기 무수 HF, 알코올 및 케톤 각각의 흐름비는 캐리어 가스의 양에 의해 조절되는 것을 특징으로 하는 반도체 소자의 콘택홀 세정방법.The method of claim 2, wherein the flow ratio of each of the anhydrous HF, alcohol and ketone is controlled by the amount of carrier gas. 제 2 항에 있어서, 상기 세정 챔버에 유입되는 무수 HF의 양은 몰비로 전체 1/50∼1/200 사이로하고, 케톤의 양은 몰비로 30%이상 70% 이하가 되도록 하는 것을 특징으로 하는 반도체 소자의 콘택홀 세정방법.3. The semiconductor device according to claim 2, wherein the amount of anhydrous HF flowing into the cleaning chamber is between 1/50 and 1/200 in molar ratio, and the amount of ketone is 30% or more and 70% or less in molar ratio. Contact hole cleaning method. 제 1 항에 있어서, 상기 피라냐 세정은 H2SO4:H2O의 비가 1:3 내지 1:4인 것을 특징으로 하는 반도체 소자의콘택홀 세정방법.The method of claim 1, wherein the piranha cleaning comprises a ratio of H 2 SO 4: H 2 O 1: 3 to 1: 4. 제 2 항에 있어서, 상기 무수 HF, 알코올 및 케톤 각각의 흐름비는 상기 각 화학조의 온도조절에 의해 조절되는 것을 특징으로 하는 반도체 소자의 콘택홀 세정방법.The method of claim 2, wherein the flow ratio of each of the anhydrous HF, alcohol and ketone is controlled by the temperature control of the chemical bath. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940037309A 1994-12-27 1994-12-27 Method of cleaning in contact hole KR0139388B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940037309A KR0139388B1 (en) 1994-12-27 1994-12-27 Method of cleaning in contact hole

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940037309A KR0139388B1 (en) 1994-12-27 1994-12-27 Method of cleaning in contact hole

Publications (2)

Publication Number Publication Date
KR960026178A true KR960026178A (en) 1996-07-22
KR0139388B1 KR0139388B1 (en) 1998-07-15

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Cited By (2)

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Publication number Priority date Publication date Assignee Title
KR100404461B1 (en) * 1998-12-30 2004-03-19 주식회사 대우일렉트로닉스 Caption data processing apparatus in atv
US7852407B2 (en) 2003-09-17 2010-12-14 Lg Electronics Inc. Digital broadcast receiver and method for processing caption thereof

Cited By (37)

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KR100404461B1 (en) * 1998-12-30 2004-03-19 주식회사 대우일렉트로닉스 Caption data processing apparatus in atv
US7852407B2 (en) 2003-09-17 2010-12-14 Lg Electronics Inc. Digital broadcast receiver and method for processing caption thereof
US7936399B2 (en) 2003-09-17 2011-05-03 Lg Electronics Inc. Digital broadcast receiver and method for processing caption thereof
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Publication number Publication date
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