KR950014987A - Resist Composition and Method of Forming Resist Pattern - Google Patents

Resist Composition and Method of Forming Resist Pattern Download PDF

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KR950014987A
KR950014987A KR1019940029664A KR19940029664A KR950014987A KR 950014987 A KR950014987 A KR 950014987A KR 1019940029664 A KR1019940029664 A KR 1019940029664A KR 19940029664 A KR19940029664 A KR 19940029664A KR 950014987 A KR950014987 A KR 950014987A
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group
compound
substituted
alkyl group
resist composition
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KR100333565B1 (en
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미사유끼 오이에
노부노리 아베
히데유끼 다나까
아끼라 오이까와
슈이찌 미야따
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나까노 가쓰히꼬
닛뽕제온 가부시끼가이샤
세끼자와 다다시
후지쯔 가부시끼가이샤
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

(A) 활성광선의 조사에 의하여 산을 생성가능한 화합물, (B) 산에 대해서 불안정한 기를 갖는 구조단위를 가지며, 또한, 화합물(A)에서 유래하는 산의 존재하에 이 기가 분해되어 알칼리 가용성이 되는 중합체, 및 (C) 페놀 화합물을 함유하는 레지스트 조성물, 및 이 레지스트 조성물을 사용한 레지스트 패턴의 형성 방법이 제공된다.(A) a compound capable of producing an acid by irradiation with actinic rays, a structural unit having a group unstable to an acid (B), and in the presence of an acid derived from the compound (A), the group is decomposed to become alkali-soluble A resist composition containing a polymer and (C) a phenol compound, and a method of forming a resist pattern using the resist composition are provided.

Description

레지스트 조성물 및 레지스트 패턴의 형성방법Resist Composition and Method of Forming Resist Pattern

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (18)

(A) 활성 광선의 조사에 의하여 산을 생성가능한 화합물, (B) 산에 대해서 불안정한 기를 갖는 구조 단위를 가지며, 또한 화합물(A)에 유래하는 산의 존재하에 이 기가 분해되어 알칼리 가용성이 되는 중합체, 및 (C) 페놀 화합물을 함유하는 레지시트 조성물.A polymer having (A) a compound capable of producing an acid by irradiation with actinic rays, a structural unit having a group unstable to an acid (B), and which is decomposed in the presence of an acid derived from the compound (A) to become alkali-soluble And (C) a resist composition containing a phenolic compound. 제1항에 있어서, 중합체(B)가 산에 대해서 불안정한 기를 갖는 구조 단위로서, 하기 일반식( I ), (Ⅱ) 및 (Ⅲ)으로 표시되는 구조 단위에서 선택되는 적어도 1종의 구조 단위를 함유하는 것인 레지스트 조성물.The structural unit according to claim 1, wherein the polymer (B) has at least one structural unit selected from the structural units represented by the following general formulas (I), (II) and (III) as the structural unit having an unstable group to an acid. It contains a resist composition. [식중, Rl및 R2는 서로 동일 또는 상이하며, 수소 원자, 할로겐 원자, 시아노기, 탄소수 1∼5의 알킬기, 또는 탄소수 1∼5의 치환 알킬기이고, R3은 선상 아세탈기, 고리상 아세탈기, 카르보네이트기 또는 -OR9이다. 단, R9[Wherein, R 1 and R 2 are the same as or different from each other, and are a hydrogen atom, a halogen atom, a cyano group, an alkyl group having 1 to 5 carbon atoms, or a substituted alkyl group having 1 to 5 carbon atoms, and R 3 is a linear acetal group or a cyclic An acetal group, a carbonate group or -OR 9 . With the proviso that R 9 또는or 이며, 단, 이들 식중 R1O, R11, Rl2, Rl3, Rl4및 Rl5는 각각 독립적으로, 직쇄 알킬기, 치환 직쇄 알킬기, 측쇄 알킬기, 치환 측쇄 알킬기, 시클로알킬기, 치환 시클로알킬기, 알케닐기, 치환 알켈닐기, 아릴기, 치환 아릴기, 아르알킬기, 또는 치환 아르알킬기를 나타내고, 이들 중, R13및 R14는 수소원자라도 좋다.] Wherein , in these formulas, R 1 O , R 11 , R l2 , R l3 , R l4 and R l5 each independently represent a straight chain alkyl group, a substituted straight chain alkyl group, a branched chain alkyl group, a substituted side chain alkyl group, a cycloalkyl group, a substituted cycloalkyl group, and an alken. Or a substituted alkenyl group, an aryl group, a substituted aryl group, an aralkyl group, or a substituted aralkyl group, among which R 13 and R 14 may be hydrogen atoms.] [식중, R4는 수소 원자, 할로겐 원자, 시아노기, 탄소수 1∼5의 알킬기, 또는 탄소수 1∼5의 치환알킬 기이고, R5[Wherein, R 4 is a hydrogen atom, a halogen atom, a cyano group, an alkyl group having 1 to 5 carbon atoms or a substituted alkyl group having 1 to 5 carbon atoms, and R 5 is 또는or 이며, 단, 이들 식중 R1O, R11, Rl2, Rl3, Rl4및 Rl5는 각각 독립적으로, 직쇄 알킬기, 치환 직쇄 알킬기, 측쇄 알킬기, 치환 측쇄 알킬기, 시클로알킬기, 치환 시클로알킬기, 알케닐기, 치환 알켈닐기, 아릴기, 치환 아릴기, 아르알킬기, 또는 치환 아르알킬기를 나타내고, 이들 중, R13및 R14는 수소원자라도 좋다.] Wherein , in these formulas, R 1 O , R 11 , R l2 , R l3 , R l4 and R l5 each independently represent a straight chain alkyl group, a substituted straight chain alkyl group, a branched chain alkyl group, a substituted side chain alkyl group, a cycloalkyl group, a substituted cycloalkyl group, and an alken. Or a substituted alkenyl group, an aryl group, a substituted aryl group, an aralkyl group, or a substituted aralkyl group, among which R 13 and R 14 may be hydrogen atoms.] [식중, R6및 R7은 수소원자, 할로겐 원자, 시아노기, 탄소수 1∼5의 알킬기, 또는 탄소수 1∼5의 치환 알킬기이고, R8[Wherein R 6 and R 7 are a hydrogen atom, a halogen atom, a cyano group, an alkyl group having 1 to 5 carbon atoms or a substituted alkyl group having 1 to 5 carbon atoms, and R 8 is 또는or 이며, 단, 이들 식중 R1O, R11, Rl2, Rl3, Rl4및 Rl5는 각각 독립적으로, 직쇄 알킬기, 치환 직쇄 알킬기, 측쇄 알킬기, 치환 측쇄 알킬기, 시클로알킬기, 치환 시클로알킬기, 알케닐기, 치환 알켈닐기, 아릴기, 치환 아릴기, 아르알킬기, 또는 치환 아르알킬기를 나타내고, 이들 중, R13및 R14는 수소원자라도 좋다.] Wherein , in these formulas, R 1 O , R 11 , R l2 , R l3 , R l4 and R l5 each independently represent a straight chain alkyl group, a substituted straight chain alkyl group, a branched chain alkyl group, a substituted side chain alkyl group, a cycloalkyl group, a substituted cycloalkyl group, and an alken. Or a substituted alkenyl group, an aryl group, a substituted aryl group, an aralkyl group, or a substituted aralkyl group, among which R 13 and R 14 may be hydrogen atoms.] 제1항에 있어서, (B) 성분이 하기 일반식(Ⅳ), (V) 및 (Ⅵ)으로 나타낸 화합물로 이루어진 군에서 선택되는 적어도 1종의 단량체(a)와 스티렌계 화합물, 아크릴산계 화합물, 메타크릴산계 화합물, 아크릴산 아미드계 화합물, 메타크릴산 아미드계 화합물, 말레산계 화합물, 무수 말레산계 화합물, 비닐아세테이트 비닐피놀리딘, 아크릴로니트릴, 마로니트릴, 비닐피롤리돈, 비닐카르바졸로 이루어진 군에서 선택된 적어도 1종의 단량체 (b)와의 공중합체인 레지스트 조성물.The at least one monomer (a), a styrene-based compound, and an acrylic acid-based compound according to claim 1, wherein the component (B) is selected from the group consisting of compounds represented by the following general formulas (IV), (V) and (VI). , Methacrylic acid compound, acrylic acid amide compound, methacrylic acid amide compound, maleic acid compound, maleic anhydride compound, vinyl acetate vinylpinolidine, acrylonitrile, maronitrile, vinylpyrrolidone, vinylcarbazolo A resist composition which is a copolymer with at least one monomer (b) selected from the group consisting of. [식중, R1, R2및 R3은 일반식 (I)에서의 정의와 동일하다.][Wherein, R 1 , R 2 and R 3 are the same as defined in general formula (I).] [식중, R1, R2및 R3은 일반식 (Ⅱ)에서의 정의와 동일하다.][Wherein, R 1 , R 2 and R 3 have the same definitions as in general formula (II).] [식중, R1, R2및 R3은 일반식 (Ⅲ)에서의 정의와 동일하다.][Wherein, R 1 , R 2 and R 3 are the same as defined in General Formula (III).] 제3항에 있어서, (B) 성분이 단량체 (a) 30∼80몰%와 단량체 (b) 20∼70몰%와의 공중합체인 레지스트 조성물.The resist composition of Claim 3 whose component (B) is a copolymer of 30-80 mol% of monomers (a) and 20-70 mol% of monomers (b). 제3항에 있어서, 공중합체의 중량평균 분자량이 1,000∼1,000,000의 범위인 레지스트 조성물.4. The resist composition of claim 3, wherein the copolymer has a weight average molecular weight in the range of 1,000 to 1,000,000. 제3항에 있어서, (B) 성분이 상기 일반식 (Ⅳ), (Ⅴ) 및 (Ⅵ)으로 표시되는 화합물로 이루어진 군에서 선택된 적어도 1종의 단량체 (a)와 스티렌, 4-히드록시스티렌 및 메틸 메타크릴레이트로 이루어진 군에서 선택된 적어도 1종의 단량체와의 공중합체인 레지스트 조성물.The at least one monomer (a), styrene, and 4-hydroxystyrene according to claim 3, wherein the component (B) is selected from the group consisting of compounds represented by the general formulas (IV), (V) and (VI). And a copolymer with at least one monomer selected from the group consisting of methyl methacrylate. 제6항에 있어서, (B) 성분기 하기 화학식7. The component group according to claim 6, wherein 의 화합물과 4-히드록시 스티렘과의 공중합체인 레지스트 조성물.A resist composition which is a copolymer of the compound of and 4-hydroxy styrene. 제6항에 있어서, (B) 성분이 하기 일반식The component of (B) is a general formula 의 화합물과 스티렌과의 공중합체인 레지스트 조성물.A resist composition which is a copolymer of a compound of and styrene. 제6항에 있어서, (B) 성분이 하기 일반식The component of (B) is a general formula 의 화합물과 메틸 메타크릴레이트와의 공중합체인 레지스트 조성물.A resist composition which is a copolymer of a compound of and methyl methacrylate. 제6항에 있어서, (B) 성분이 하기 화학식7. The component (B) according to claim 6, wherein 의 화합물과 메틸 메닥크릴레이트와의 공중합체인 레지스트 조성물.A resist composition which is a copolymer of a compound of and methyl methacrylate. 제6항에 있어서, (B) 성분이 하기 화학식7. The component (B) according to claim 6, wherein 의 화합물과 4-히드록시스티렌과 공중합체인 레지스트 조성물.A resist composition which is a copolymer of the compound of 4-hydroxystyrene with. 제6항에 있어서, (B) 성분이 하기 일반식The component of (B) is a general formula 1항에 있어서, (A) 성분이 오늄염, 할로겐화 유기 화합물, 퀴논디아지드 화합물, α, α'-비스(술포닐) 디아조메탄계 화합물, α-카르보닐-7'-술포닐디아조메탄계 화합물, 술폰 화합물, 유기산 에스테르 화합물, 유기산 아미드 화합물, 및 유기산 아미드 화합물로 이루어진 군에서 선택된 적어도 1종의 화합물인 레지스트 조성물.The component (A) according to claim 1, wherein the component (A) is an onium salt, a halogenated organic compound, a quinonediazide compound, an α, α'-bis (sulfonyl) diazomethane compound, an α-carbonyl-7'-sulfonyldiazo A resist composition which is at least one compound selected from the group consisting of a methane compound, a sulfone compound, an organic acid ester compound, an organic acid amide compound, and an organic acid amide compound. 제1항에 있어서, (C) 성분이 페놀류, 비스페놀류, 트리스페놀류, 테트라키스페놀류, 히드록시벤조페논류, 히드록시비페닐류, 히드록시벤조페논옥심, 히드록시벤조트리아졸류, 히드록시아세트페논류, 몰식자산, 히드록시스티렌, 히드록시스티렌계 올리고머, 히드록시-7-메틸스티렌, 히드록시-α-메틸스티렌계 올리고머, 노볼락 올리고머, 크로몬류, 플라본류, 플라보놀류, 플라바논류, 옥시플라바논류, 이소플라반류, 크로만류, 카텐킨류, 스피로비크로만류, 니트로페놀류, 시아노페놀류, 알콕시페놀류, 할로겐화 페놀류, 및 이들의 유도체로 이루어진 군에서 선택되는 적어도 1종의 화합물인 조성물.(C) Component is phenol, bisphenol, trisphenol, tetrakisphenol, hydroxy benzophenone, hydroxy biphenyl, hydroxy benzophenone oxime, hydroxy benzotriazole, hydroxy acet of Claim 1 Phenones, moles, hydroxystyrene, hydroxystyrene oligomers, hydroxy-7-methylstyrene, hydroxy-α-methylstyrene oligomers, novolac oligomers, chromones, flavones, flavonols, flavanones , At least one compound selected from the group consisting of oxyflavanones, isoflavanes, cromanns, catechins, spirobichromans, nitrophenols, cyanophenols, alkoxyphenols, halogenated phenols, and derivatives thereof. Composition. 제1항에 있어서, (B) 성분 100중량부에 대해서 (A) 성분을 0.01∼50중량부와 (C) 성분을 0.01∼100중랑부의 비율로 함유하는 레지스트 조성물.The resist composition of Claim 1 containing 0.01-50 weight part of (A) components and 0.01-100 weight part of (C) component with respect to 100 weight part of (B) components. 제1항에 있어서, (A) 성분, (B) 성분 및 (C) 성분을 균일하게 용해시키기에 충분한 양의 용매를 추가로 함유하는 레지스트 조성물.The resist composition according to claim 1, further comprising a solvent in an amount sufficient to uniformly dissolve the components (A), (B) and (C). 기판상에 화학증폭형 레지스트를 도포하는 공정, 제1의 가열처리, 활성광선의조사, 제2의 가열처리, 및 현상의 각 공정을 순차적으로 포함하며 이루어지는 레지스트 패턴의 형성 방법에 있어서, 화학증폭형 레지스트로서 제1항의 레지스트 조성물을 사용하는 레지스트 패턴의 형성방법.A chemical amplification method comprising the steps of applying a chemically amplified resist onto a substrate, a first heat treatment, irradiation of actinic light, a second heat treatment, and development. A method of forming a resist pattern using the resist composition of claim 1 as a type resist. 제17항에 있어서, 기판이 레지스트 도포면에 10nm 이상의 단차를 갖는 것인 레지스트 패턴의 형성방법.The method of forming a resist pattern according to claim 17, wherein the substrate has a step of 10 nm or more on the resist coating surface. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
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