KR950010257A - Laser diode - Google Patents

Laser diode Download PDF

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Publication number
KR950010257A
KR950010257A KR1019930019469A KR930019469A KR950010257A KR 950010257 A KR950010257 A KR 950010257A KR 1019930019469 A KR1019930019469 A KR 1019930019469A KR 930019469 A KR930019469 A KR 930019469A KR 950010257 A KR950010257 A KR 950010257A
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KR
South Korea
Prior art keywords
layer
laser diode
substrate
center
mesa
Prior art date
Application number
KR1019930019469A
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Korean (ko)
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KR100259009B1 (en
Inventor
김종렬
Original Assignee
김광호
삼성전자 주식회사
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Priority to KR1019930019469A priority Critical patent/KR100259009B1/en
Publication of KR950010257A publication Critical patent/KR950010257A/en
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Publication of KR100259009B1 publication Critical patent/KR100259009B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
    • G11B7/127—Lasers; Multiple laser arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

본 발명은 레이저 다이오드에 관한 것이다.The present invention relates to a laser diode.

본 발명은 최하층에 위치되며 그 중앙부에 메사구조의 리지가 형성되어 있는 기판과, 상기 기판의 상부에 형성되는 것으로 그 상, 하부에는 크래드층이 마련되며 레이저를 발진시키는 활성층과, 상기 상부 크래드층의 상부에 형성되는 것으로 전류를 제한적으로 차단하는 전류제한층과, 상기 전류제한층의 상부에 형성되는 것으로 하부층의 불순물유입을 방지하는 캡층을 구비하는 레이저 다이오드에 있어서, 상기 기판의 중앙부에 형성된 리지는 상광하협의 역메사형으로 되어 있고, 상기 활성층은 그 중앙부에 순메사형의 굴곡부를 가지는 연속된 단일층으로 되어 있으며, 그 상, 하부에는 상기 활성층을 따라 그 중앙부에 순메사형의 굴곡부를 가지는 SCH층이 형성되어 있다.According to the present invention, a substrate having a mesa structure ridge formed at a lowermost layer and a mesa structure is formed at the center thereof, and an upper layer and a cladding layer provided on and below the active layer for oscillating a laser. A laser diode having a current limiting layer formed on an upper portion of a rod layer to restrict current, and a cap layer formed on an upper portion of the current limiting layer to prevent impurities from flowing into a lower layer. The formed ridges are inverted mesas of the upper and lower straits, and the active layer is a continuous single layer having a net mesa-shaped bent portion at its center, and the upper and lower portions thereof have a net mesa-shaped bent portion at the center thereof along the active layer. The SCH layer is formed.

이와 같은 레이저 다이오드는 1회의 에피택셜 성장만으로 용이하게 제조할 수 있으며, 이에 따라 제작상의 재현성을 기대할 수 있을 뿐만 아니라, 활성층의 레이저 발진영역이 메사구조체의 경사면에 위치해 낮은 구동전류로도 광정보처리용의 단파장대 레이저광을 발진시킬 수 있으므로. 소비전력의 저감화효과를 가져오게 된다.Such a laser diode can be easily manufactured by only one epitaxial growth. As a result, the reproducibility in manufacturing can be expected. In addition, the laser oscillation region of the active layer is located on the inclined surface of the mesa structure, and the optical information is processed even with a low driving current. Because it can oscillate the dragon's short wavelength laser beam. It will reduce the power consumption.

Description

레이저 다이오드Laser diode

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 종래 레이저 다이오드의 단면구조도.1 is a cross-sectional view of a conventional laser diode.

제2도는 본 발명에 따른 레이저 다이오드의 단면구조도.2 is a cross-sectional view of a laser diode according to the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

31 : n+-GaAs기판 32 : n-GaInP버퍼층31: n + -GaAs substrate 32: n-GaInP buffer layer

33 : n-AlGaInP크래드층 34 : AlGaInP SCH층(undoped)33: n-AlGaInP clad layer 34: AlGaInP SCH layer (undoped)

35 : GaInP활성층(undoped) 36 : AlGaInP SCH층(undoped)35: GaInP active layer (undoped) 36: AlGaInP SCH layer (undoped)

37 : p-AlGaInP크래드층 38 : n-AlInP전류제한층37: p-AlGaInP clad layer 38: n-AlInP current limiting layer

39 : p-AlInP층 40 : p-GaInP버퍼층39: p-AlInP layer 40: p-GaInP buffer layer

41 : p+-GaAs캡층41: p + -GaAs cap layer

Claims (4)

최하층에 위치되며 그 중앙부에 메사구조의 리지가 형성되어 있는 기판과, 상기 기판의 상부에 형성되는 것으로 그 상, 하부에는 크래드층이 마련되며 레이저를 발진시키는 활성층과, 상기 상부 크래드층의 상부에 형성되는 것으로 전류를 제한적으로 차단하는 전류제한층과, 상기 전류제한층의 상부에 형성되는 것으로 하부층의 불순물유입을 방지하는 캡층을 구비하는 레이저 다이오드에 있어서, 상기 기판의 중앙부에 형성된 리지는 상광하협(上廣下狹)의 역메사형으로 되어 있고, 상기 활성층은 그 중앙부에 순메사형의 굴곡부를 가지는 연속된 단일층으로 되어 있으며, 그 상, 하부에는 상기 활성층을 따라 그 중앙부에 순메사형의 굴곡부를 가지는 SCH층이 형성되어 있는 것을 특징으로 하는 레이저 다이오드.A substrate having a mesa ridge formed at the center of the lowermost layer, a substrate formed on top of the substrate, and having a clad layer formed on and under the top of the substrate; In the laser diode having a current limiting layer formed on the upper limit to block the current, and a cap layer formed on top of the current limiting layer to prevent the introduction of impurities in the lower layer, the ridge formed in the center of the substrate It is inverted mesa type of upper light lower strait, and the active layer is a continuous single layer having a pure mesa-shaped bent portion at its center, and has a pure mesa-shaped portion at its center along the active layer. The SCH layer which has a curved part is formed, The laser diode characterized by the above-mentioned. 제1항에 있어서, 상기 SCH층은 AlGAInP의 조성을 갖는 것을 특징으로 하는 레이저 다이오드.The laser diode of claim 1, wherein the SCH layer has a composition of AlGAInP. 제1항에 있어서, 상기 기판 및 리지의 상면에는 n형 GaInP버퍼층이 형성되어 있는 것을 특징으로 하는 레이저 다이오드.The laser diode of claim 1, wherein an n-type GaInP buffer layer is formed on upper surfaces of the substrate and the ridge. 제1항에 있어서, 상기 기판 및 리지의 상면에는 p형 GaInP버퍼층이 형성되어 있는 것을 특징으로 하는 레이저 다이오드.The laser diode according to claim 1, wherein a p-type GaInP buffer layer is formed on upper surfaces of the substrate and the ridge. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930019469A 1993-09-23 1993-09-23 Semiconductor laser diode KR100259009B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930019469A KR100259009B1 (en) 1993-09-23 1993-09-23 Semiconductor laser diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930019469A KR100259009B1 (en) 1993-09-23 1993-09-23 Semiconductor laser diode

Publications (2)

Publication Number Publication Date
KR950010257A true KR950010257A (en) 1995-04-26
KR100259009B1 KR100259009B1 (en) 2000-06-15

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KR1019930019469A KR100259009B1 (en) 1993-09-23 1993-09-23 Semiconductor laser diode

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4124017B2 (en) 2003-05-12 2008-07-23 ソニー株式会社 Manufacturing method of surface emitting semiconductor laser device

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