KR950007956B1 - Mis 구조전극의 형성방법 - Google Patents

Mis 구조전극의 형성방법 Download PDF

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Publication number
KR950007956B1
KR950007956B1 KR1019910013194A KR910013194A KR950007956B1 KR 950007956 B1 KR950007956 B1 KR 950007956B1 KR 1019910013194 A KR1019910013194 A KR 1019910013194A KR 910013194 A KR910013194 A KR 910013194A KR 950007956 B1 KR950007956 B1 KR 950007956B1
Authority
KR
South Korea
Prior art keywords
forming
insulating film
treatment
mis structure
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019910013194A
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English (en)
Korean (ko)
Inventor
신이찌 시까따
Original Assignee
스미도모 덴기고오교오 가부시시기가이샤
나까하라 쯔네오
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2204529A external-priority patent/JPH0491435A/ja
Priority claimed from JP2204531A external-priority patent/JPH0491436A/ja
Application filed by 스미도모 덴기고오교오 가부시시기가이샤, 나까하라 쯔네오 filed Critical 스미도모 덴기고오교오 가부시시기가이샤
Application granted granted Critical
Publication of KR950007956B1 publication Critical patent/KR950007956B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01358—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being a Group III-V material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs

Landscapes

  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1019910013194A 1990-08-01 1991-07-31 Mis 구조전극의 형성방법 Expired - Fee Related KR950007956B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2-204529 1990-08-01
JP2204529A JPH0491435A (ja) 1990-08-01 1990-08-01 Ｍｉｓ構造電極の形成方法
JP2-204531 1990-08-01
JP2204531A JPH0491436A (ja) 1990-08-01 1990-08-01 Ｍｉｓ構造電極の形成方法

Publications (1)

Publication Number Publication Date
KR950007956B1 true KR950007956B1 (ko) 1995-07-21

Family

ID=26514514

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910013194A Expired - Fee Related KR950007956B1 (ko) 1990-08-01 1991-07-31 Mis 구조전극의 형성방법

Country Status (4)

Country Link
US (1) US5393680A (https=)
EP (1) EP0469604A2 (https=)
KR (1) KR950007956B1 (https=)
CA (1) CA2048206A1 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5393680A (en) * 1990-08-01 1995-02-28 Sumitomo Electric Industries, Ltd. MIS electrode forming process
JP3578539B2 (ja) * 1996-02-08 2004-10-20 三菱電機株式会社 太陽電池の製造方法および太陽電池構造
US6207976B1 (en) * 1997-12-17 2001-03-27 Fujitsu Limited Semiconductor device with ohmic contacts on compound semiconductor and manufacture thereof
US20060086977A1 (en) 2004-10-25 2006-04-27 Uday Shah Nonplanar device with thinned lower body portion and method of fabrication
US7518196B2 (en) 2005-02-23 2009-04-14 Intel Corporation Field effect transistor with narrow bandgap source and drain regions and method of fabrication
US20070090416A1 (en) 2005-09-28 2007-04-26 Doyle Brian S CMOS devices with a single work function gate electrode and method of fabrication
US7485503B2 (en) * 2005-11-30 2009-02-03 Intel Corporation Dielectric interface for group III-V semiconductor device
US8183556B2 (en) 2005-12-15 2012-05-22 Intel Corporation Extreme high mobility CMOS logic
US8143646B2 (en) 2006-08-02 2012-03-27 Intel Corporation Stacking fault and twin blocking barrier for integrating III-V on Si
US8362566B2 (en) 2008-06-23 2013-01-29 Intel Corporation Stress in trigate devices using complimentary gate fill materials
EP2187432B1 (en) * 2008-11-13 2013-01-09 Epcos AG P-type field-effect transistor and method of production
KR20120049899A (ko) 2009-09-04 2012-05-17 스미또모 가가꾸 가부시키가이샤 반도체 기판, 전계 효과 트랜지스터, 집적 회로 및 반도체 기판의 제조 방법
KR101867999B1 (ko) * 2011-10-31 2018-06-18 삼성전자주식회사 Ｉｉｉ-ｖ족 물질층을 형성하는 방법, ｉｉｉ-ｖ족 물질층을 포함하는 반도체 소자 및 그 제조방법
US9245742B2 (en) 2013-12-18 2016-01-26 Asm Ip Holding B.V. Sulfur-containing thin films
US9478419B2 (en) 2013-12-18 2016-10-25 Asm Ip Holding B.V. Sulfur-containing thin films
US9461134B1 (en) 2015-05-20 2016-10-04 Asm Ip Holding B.V. Method for forming source/drain contact structure with chalcogen passivation
US9711350B2 (en) 2015-06-03 2017-07-18 Asm Ip Holding B.V. Methods for semiconductor passivation by nitridation
US10490475B2 (en) 2015-06-03 2019-11-26 Asm Ip Holding B.V. Methods for semiconductor passivation by nitridation after oxide removal
US9741815B2 (en) 2015-06-16 2017-08-22 Asm Ip Holding B.V. Metal selenide and metal telluride thin films for semiconductor device applications
US9711396B2 (en) 2015-06-16 2017-07-18 Asm Ip Holding B.V. Method for forming metal chalcogenide thin films on a semiconductor device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2454184A1 (fr) * 1979-04-10 1980-11-07 Chemla Daniel Structure de type isolant-semi-conducteur dans laquelle le semi-conducteur est un compose iii-v et l'isolant un sulfure, et procedes de fabrication de cette structure
US4467521A (en) * 1983-08-15 1984-08-28 Sperry Corporation Selective epitaxial growth of gallium arsenide with selective orientation
JPS6231170A (ja) * 1985-08-02 1987-02-10 Agency Of Ind Science & Technol 化合物半導体装置の構造
JPS6294944A (ja) * 1985-10-21 1987-05-01 Nec Corp ３−５化合物半導体のｍｉｓ構造形成方法
FR2604826B1 (fr) * 1986-10-06 1989-01-20 France Etat Procede de formation d'une couche isolante comportant du sulfure, derives sulfures obtenus et appareillage pour la mise en oeuvre du procede
US4751201A (en) * 1987-03-04 1988-06-14 Bell Communications Research, Inc. Passivation of gallium arsenide devices with sodium sulfide
US4751200A (en) * 1987-03-04 1988-06-14 Bell Communications Research, Inc. Passivation of gallium arsenide surfaces with sodium sulfide
US4871692A (en) * 1988-09-30 1989-10-03 Lee Hong H Passivation of group III-V surfaces
JP2681117B2 (ja) * 1989-04-26 1997-11-26 康夫 南日 化合物半導体表面の安定化方法
US4920078A (en) * 1989-06-02 1990-04-24 Bell Communications Research, Inc. Arsenic sulfide surface passivation of III-V semiconductors
JPH0311633A (ja) * 1989-06-08 1991-01-18 Sekiyu Sangyo Katsuseika Center 化合物半導体装置の製造方法
JP2841775B2 (ja) * 1990-08-01 1998-12-24 住友電気工業株式会社 半導体レーザの保護膜形成方法
US5393680A (en) * 1990-08-01 1995-02-28 Sumitomo Electric Industries, Ltd. MIS electrode forming process
JP2830414B2 (ja) * 1990-08-01 1998-12-02 住友電気工業株式会社 Ｍｅｓ構造電極の形成方法

Also Published As

Publication number Publication date
CA2048206A1 (en) 1992-02-02
EP0469604A2 (en) 1992-02-05
US5393680A (en) 1995-02-28
EP0469604A3 (https=) 1995-02-01

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