KR950003863B1 - Method for molding a chip-type tantal capacitor - Google Patents
Method for molding a chip-type tantal capacitor Download PDFInfo
- Publication number
- KR950003863B1 KR950003863B1 KR1019920013585A KR920013585A KR950003863B1 KR 950003863 B1 KR950003863 B1 KR 950003863B1 KR 1019920013585 A KR1019920013585 A KR 1019920013585A KR 920013585 A KR920013585 A KR 920013585A KR 950003863 B1 KR950003863 B1 KR 950003863B1
- Authority
- KR
- South Korea
- Prior art keywords
- tantalum
- molding
- chip
- capacitor
- pellet
- Prior art date
Links
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims abstract description 37
- 238000000465 moulding Methods 0.000 title claims abstract description 7
- 239000003990 capacitor Substances 0.000 title claims description 16
- 238000000034 method Methods 0.000 title claims description 16
- 239000008188 pellet Substances 0.000 claims abstract description 10
- 238000000748 compression moulding Methods 0.000 claims abstract description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 238000005303 weighing Methods 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 abstract description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 abstract description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000843 powder Substances 0.000 abstract description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 abstract 2
- 238000005470 impregnation Methods 0.000 description 7
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 6
- 239000007788 liquid Substances 0.000 description 4
- 238000007493 shaping process Methods 0.000 description 3
- 238000001354 calcination Methods 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical group [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Powder Metallurgy (AREA)
Abstract
Description
제1도는 본 발명에 따른 탄탈 펠릿(PELLET)의 표면에 오산화이탄탈(Ta2O5) 피막을 형성하게 되는 화성공정 직후의 탄탈 콘덴서 사시도.1 is a perspective view of a tantalum capacitor immediately after the formation process to form a tantalum pentoxide (Ta 2 O 5 ) film on the surface of the tantalum pellet (PELLET) according to the present invention.
제2(a)도는 종래 탄탈소자의 표면을 보인 확대도. 제2(b)도는 본 발명에 탄탈소자의 표면을 보이기 위한 제1도 A부분에 대한 부분 확대도.Figure 2 (a) is an enlarged view showing the surface of the conventional tantalum element. FIG. 2 (b) is a partially enlarged view of part A of FIG. 1 for showing the surface of the tantalum element in the present invention.
제3도는 각각 종래 기술과 본 발명에 따른 성형방법에 의해 제조된 탄탈 콘덴서의 손실각 정접(tanδ)을 비교하기 위한 주파수 특성도.3 is a frequency characteristic diagram for comparing the loss angle tangent (tan δ) of the tantalum capacitor produced by the molding method according to the prior art and the present invention, respectively.
본 발명은 칩형식(chip type) 탄탈 콘덴서의 성형방법에 관한 것으로, 특히 탄탈분말을 압축 소성함에 있어서 소자내부의 밀도를 소정 범위(5.5~6.5g/cm3)로 한정함으로서 120Hz에서의 손실각 정접 주파수 특성(tanδ)을 향상시킬 수 있도록 한 칩형 탄탈 전해콘덴서의 성형방법에 관한 것이다.The present invention relates to a shaping method of a chip type tantalum capacitor, and in particular, in compressing and firing tantalum powder, the loss angle at 120 Hz is limited by limiting the density inside the device to a predetermined range (5.5 to 6.5 g / cm 3 ). The present invention relates to a shaping method of a chip type tantalum electrolytic capacitor capable of improving the tangent frequency characteristic (δδ).
일반적으로 탄탈 콘덴서는 탄탈분말에 바인더(binder) 역할을 하는 용제인 D-콤퍼(comphor)를 혼합한후, 용제를 건조시킨 다음 평량하여 원통형 또는 각형 펠릿(pellet)에 양극 리드(lead)인 탄탈선을 삽입시켜 소결공정, 소자용접공정, 화성 및 소성공정에 이르게 되며, 상기 소성공정에서는 탄탈피막(Ta2O5)상에 전해질층을 형성하기 위해 소자를 질산망간액[Mn(NO3)2] 액중에 침적시킨 후 소성로에서 열분해시켜 이산화망간 고체 전해질층을 형성하게 된다.In general, tantalum capacitors are mixed with tantalum powder, a D-comphor, a solvent that acts as a binder, and then dried and weighed into tantalum, which is an anode lead in cylindrical or rectangular pellets. The wire is inserted into the sintering process, the element welding process, the chemical conversion, and the calcination process. In the calcination process, the element is manganese nitrate solution [Mn (NO 3 ) to form an electrolyte layer on the tantalum film (Ta 2 O 5 ). 2 ] It is deposited in a liquid and pyrolyzed in a kiln to form a manganese dioxide solid electrolyte layer.
상기와 같은 이산화망간층을 형성하기 위해서 종래의 경우에는 제2(a)도에서보는 바와 같이 소자 내부의 밀도가 높아 소자내 기공의 크기가 작아지게 됨으로써, 함침액의 함침율이 저하되게 되는 바, 이렇게 되면 소자 내부의 이산화망간(MnO2) 도포율에 있어서 과소현상이 발행하고, 그로 인한 접촉저항이 발생되며 1KHz에서의 손실특성이 불량하게 되었다.In order to form the manganese dioxide layer as described above, in the conventional case, as shown in FIG. 2 (a), the density of the inside of the device is high and the size of pores in the device is reduced, so that the impregnation rate of the impregnation liquid is reduced. In this case, undercurrent occurs in the coating rate of manganese dioxide (MnO 2 ) inside the device, resulting in contact resistance and poor loss characteristics at 1 KHz.
제3도에서 보는 바와 같이 예컨대 내압 한계전압이 35V이고 1μF의 정전용량을 갖는 칩형 탄탈 콘덴서의 경우, 일반적으로 손실특성을 나타냄에 있어서 기준 주파수로 통용되고 있는 120Hz에서 0.04의 손실특성을 나타내고 있어 손실이 매우 큰 것임을 알 수 있다.As shown in FIG. 3, for example, a chip type tantalum capacitor having a breakdown voltage of 35 V and having a capacitance of 1 μF generally exhibits a loss characteristic of 0.04 at 120 Hz, which is commonly used as a reference frequency. You can see that this is very large.
본 발명은 상기한 사정을 감안하여 창출된 것으로서, 종래와 같은 손실특성을 대폭 개선하기 위한 것인바, 탄탈소자의 프레스 강도를 조정하여 소자 내부의 밀도를 소정 범위로 낮춤으로 인해, 소자 내부의 공극 확장 효과를 발생시키는 한편 함침액의 함침율을 높임으로서 접촉저항을 감소시키고, 손실특성을 크게 낮출 수 있도록 된 칩형 탄탈 전해콘덴서의 성형방법을 제공함에 그 목적이 있다.The present invention has been made in view of the above circumstances, and is intended to greatly improve the loss characteristics as in the prior art, by adjusting the press strength of the tantalum element to lower the density inside the element to a predetermined range, thereby allowing voids in the element. It is an object of the present invention to provide a method for forming a chip type tantalum electrolytic capacitor which can reduce the contact resistance and increase the loss characteristics by increasing the impregnation rate of the impregnation solution while generating an expansion effect.
상기 목적을 실현하기 위한 본 발명에 따른 칩형 탄탈 전해콘덴서의 성형방법은 탄탈 콘덴서의 제조공정에 있어서, 탄탈분말 19000CV/g을 원통형 또는 각형 펠릿에 넣어 평량하는 탄탈분말 평량단계와, 상기 펠릿에 양극 리드선인 탄탈선을 삽입한 후, 프레스의 압력으로 성형밀도 5.5-6.5g/cm3로 압축성형하는 압축 성형단계를 포함하는 것을 특징으로 한다.The method for forming a chip type tantalum electrolytic capacitor according to the present invention for achieving the above object is a tantalum powder basis weight step of weighing tantalum powder 19000CV / g into a cylindrical or square pellet in the manufacturing process of the tantalum capacitor, and the anode to the pellet After inserting the lead tantalum wire, it is characterized in that it comprises a compression molding step of compression molding to a molding density 5.5-6.5g / cm 3 under the pressure of the press.
이하, 첨부된 도면을 참조하여 본 발명에 따른 탄탈 콘덴서의 성형방법을 상세히 설명하면 다음과 같다.Hereinafter, a method of forming a tantalum capacitor according to the present invention with reference to the accompanying drawings in detail as follows.
탄탈 콘덴서의 소자를 성형하기 위하여 탄탈 분말 19000CV/g[탄탈분말 1g으로 1개의 펠릿을 성형했을때 19000CV(C:정전용량, V:인가전압)값을 얻을 수 있는 만큼의 탄탈분말; 탄탈분말의 표면적을 나타내는 단위로서 일반적으로 통용되는 단위를 원통형 또는 각형 펠릿(pellet)에넣고 양극 리드선인 탄탈선을 삽입하여 프레스의 압력으로 성형밀도 5.5-6.5g/cm3로 성형한다.Tantalum powders capable of obtaining a value of 19000CV (C: capacitance, V: applied voltage) when one pellet is formed from tantalum powder 19000CV / g [tantalum powder 1g to form an element of a tantalum capacitor; As a unit representing the surface area of a tantalum powder, a generally used unit is put into a cylindrical or square pellet, and a tantalum wire, which is an anode lead wire, is inserted and molded at a press density of 5.5-6.5 g / cm 3 under the pressure of a press.
상기와 같은 방법에 의해 제조된 탄탈소자는 제2(b)도에 도시된 바와 같이 소자표면에 형성되는 기공의 크기가 종래의 성형방법으로 제조된 소자보다 크게 형성되므로써 함침액으로 사용되는 질산망간액[Mn(NO3)2]의 함침율을 높이고 접촉저항을 줄이도록 하였다.The tantalum element manufactured by the method described above is manganese nitrate used as the impregnation liquid because the size of pores formed on the surface of the element is formed larger than the element manufactured by the conventional molding method, as shown in Figure 2 (b) The impregnation rate of the liquid [Mn (NO 3 ) 2 ] was increased and the contact resistance was decreased.
이결과 본 발명에 따라 성형방법으로 제조된 35V-1μF을 갖는 칩형 탄탈 콘덴서의 경우 제3도에 도시된 바와 같이 120Hz 주파수에서의 손실특성이 0.02정도로 낮게 나타나게 됨을 알 수 있다.As a result, in the case of the chip-type tantalum capacitor having a 35V-1μF manufactured by the molding method according to the present invention, it can be seen that the loss characteristic at the 120Hz frequency is as low as 0.02 as shown in FIG.
이상 설명한 바와 같이, 본 발명은 칩형 탄탈 전해콘덴서의 성형공정에서 탄탈소자의 내부 밀도를 5.5~6.5g/cm2범위로 한정하여 성형함으로써, 소자 내부의 공극이 확장됨을 이용, 함침액의 함침율을 높이고 접촉저항을 크게 감소시킴으로써, 120Hz에서의 손실특성을 0.02로 감소시킬 수 있도록 된 우수한 발명이다.As described above, the present invention is formed by limiting the internal density of the tantalum element to the range of 5.5 to 6.5 g / cm 2 in the shaping process of the chip type tantalum electrolytic capacitor, thereby expanding the voids in the element, thereby impregnating the impregnation rate. It is an excellent invention that it is possible to reduce the loss characteristic at 120 Hz to 0.02 by increasing the contact resistance and greatly reducing the contact resistance.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920013585A KR950003863B1 (en) | 1992-07-29 | 1992-07-29 | Method for molding a chip-type tantal capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920013585A KR950003863B1 (en) | 1992-07-29 | 1992-07-29 | Method for molding a chip-type tantal capacitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR940002884A KR940002884A (en) | 1994-02-19 |
| KR950003863B1 true KR950003863B1 (en) | 1995-04-20 |
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ID=19337170
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019920013585A KR950003863B1 (en) | 1992-07-29 | 1992-07-29 | Method for molding a chip-type tantal capacitor |
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| Country | Link |
|---|---|
| KR (1) | KR950003863B1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100298571B1 (en) * | 1999-06-17 | 2001-09-13 | 박찬구 | A process for preparation of high 1,4-cis polybutadiene |
| US8816032B1 (en) * | 2013-05-24 | 2014-08-26 | The Goodyear Tire & Rubber Company | Copolymer of conjugated diene and 1-vinylcycloalkene |
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1992
- 1992-07-29 KR KR1019920013585A patent/KR950003863B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR940002884A (en) | 1994-02-19 |
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