KR940009082B1 - 반도체 메모리장치 - Google Patents

반도체 메모리장치 Download PDF

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Publication number
KR940009082B1
KR940009082B1 KR1019910004309A KR910004309A KR940009082B1 KR 940009082 B1 KR940009082 B1 KR 940009082B1 KR 1019910004309 A KR1019910004309 A KR 1019910004309A KR 910004309 A KR910004309 A KR 910004309A KR 940009082 B1 KR940009082 B1 KR 940009082B1
Authority
KR
South Korea
Prior art keywords
switch means
pull
transistors
current path
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019910004309A
Other languages
English (en)
Korean (ko)
Inventor
야수시 구보다
Original Assignee
샤프 가부시끼가이샤
쓰지 하루오
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 샤프 가부시끼가이샤, 쓰지 하루오 filed Critical 샤프 가부시끼가이샤
Application granted granted Critical
Publication of KR940009082B1 publication Critical patent/KR940009082B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
KR1019910004309A 1990-03-19 1991-03-19 반도체 메모리장치 Expired - Fee Related KR940009082B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2069215A JPH0834058B2 (ja) 1990-03-19 1990-03-19 半導体メモリ装置
JP2-69215 1990-03-19

Publications (1)

Publication Number Publication Date
KR940009082B1 true KR940009082B1 (ko) 1994-09-29

Family

ID=13396275

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910004309A Expired - Fee Related KR940009082B1 (ko) 1990-03-19 1991-03-19 반도체 메모리장치

Country Status (5)

Country Link
US (1) US5245581A (https=)
EP (1) EP0448025B1 (https=)
JP (1) JPH0834058B2 (https=)
KR (1) KR940009082B1 (https=)
DE (1) DE69114555T2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5912853A (en) * 1996-12-03 1999-06-15 Cirrus Logic, Inc. Precision sense amplifiers and memories, systems and methods using the same
US5861767A (en) * 1996-12-03 1999-01-19 Cirrus Logic, Inc. Digital step generators and circuits, systems and methods using the same
JP2007120991A (ja) * 2005-10-25 2007-05-17 Sharp Corp テストパターンの検出率算出方法、コンピュータプログラム及びテストパターンの検出率算出装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0787037B2 (ja) * 1984-03-02 1995-09-20 沖電気工業株式会社 半導体メモリ回路のデータ書込方法
US4791616A (en) * 1985-07-10 1988-12-13 Fujitsu Limited Semiconductor memory device
JPS62232796A (ja) * 1986-04-01 1987-10-13 Toshiba Corp 半導体記憶装置
JPH0758592B2 (ja) * 1987-11-30 1995-06-21 日本電気株式会社 半導体メモリ
JP2644261B2 (ja) * 1988-03-15 1997-08-25 株式会社東芝 ダイナミック型半導体記憶装置
KR910009444B1 (ko) * 1988-12-20 1991-11-16 삼성전자 주식회사 반도체 메모리 장치

Also Published As

Publication number Publication date
JPH03269895A (ja) 1991-12-02
EP0448025A2 (en) 1991-09-25
JPH0834058B2 (ja) 1996-03-29
DE69114555T2 (de) 1996-07-04
EP0448025B1 (en) 1995-11-15
US5245581A (en) 1993-09-14
EP0448025A3 (https=) 1994-02-02
DE69114555D1 (de) 1995-12-21

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