KR937001838A - Solar cell and a method of manufacturing the same - Google Patents

Solar cell and a method of manufacturing the same Download PDF

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Publication number
KR937001838A
KR937001838A KR1019930700382A KR930700382A KR937001838A KR 937001838 A KR937001838 A KR 937001838A KR 1019930700382 A KR1019930700382 A KR 1019930700382A KR 930700382 A KR930700382 A KR 930700382A KR 937001838 A KR937001838 A KR 937001838A
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South Korea
Prior art keywords
electrode
semiconductor substrate
paste
ink
anti
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KR1019930700382A
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Korean (ko)
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왈드 프리츠
무라드 자곱
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버나드 엠 길레스피
모빌 쏠라 에너지 코포레이션
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Priority to US71368891A priority Critical
Priority to US7/713688 priority
Application filed by 버나드 엠 길레스피, 모빌 쏠라 에너지 코포레이션 filed Critical 버나드 엠 길레스피
Priority to PCT/US1992/003799 priority patent/WO1992022928A1/en
Publication of KR937001838A publication Critical patent/KR937001838A/en

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/54Material technologies
    • Y02E10/547Monocrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product
    • Y02P70/52Manufacturing of products or systems for producing renewable energy
    • Y02P70/521Photovoltaic generators

Abstract

본 발명의 태양전지는 전면(4)에 인접하여 얕은 pn 접합(3)을 갖는 반도체 기재(2)를 포함하는 형태이고, 배면 전극(6)이 반도체 기재(2)의 배면(7)에 기계적이고 전기적으로 접촉되게 부착되며, 그리드형 전면전극이 기다랗고 좁으며 평행한 세폭부(10)의 어레이와 이에 직각으로 연장되고 반도체 기재(2)의 전면(4)에 기계적이고 저저항의 전기적으로 접촉되게 부착되는 적어도 하나의 버스바(13)를 포함한다. A solar cell of the present invention is a form including a front semiconductor substrate having a shallow pn junction (3) adjacent to (4) (2), a back electrode 6, the machine on the rear surface 7 of the semiconductor substrate (2) and is attached to be in electrical contact with, the grid-type front electrodes extend in the array and hence perpendicular to the three pokbu 10 a wait narrow was parallel ratgo to the mechanical and low resistance at the front 4 of the semiconductor substrate (2) electrically includes at least one bus bar 13 is attached in contact. 본 발명의 개선점은 반도체 기재의 전면(4)에 기계적이고 전기적으로 친밀하게 접촉되는 것으로부터 그리드형 전면전극의 버스바 부분(13)이 제거되는 것을 포함한다. Improvements of the present invention include those which remove the front (4) mechanical and electrical intimately bus bar portions 13 of the front grid-shaped electrode from being in contact with the semiconductor substrate. 이러한 개선점으로 개방회로전압과 태양전지의 효율이 증가하고, 그리드형 전극의 버스바부분(13)일 전극의 세폭부(10)와는 상이한 물질로 구성되므로서 태양전지의 효율이 저하되지 아니하고 코스트를 줄일 수 있으며 설계의 다양성이 제공된다. Since these improvements in open circuit increases the voltage and efficiency of the solar cell, and composed of different materials than the three pokbu 10 of the first electrode bus bar portions 13 of the grid-shaped electrode, standing of the solar cell efficiency nor not decrease the cost and it is provided to reduce the variety of designs. 또한 개선된 태양전지의 제조 방법이 기술되어 있다. There is also a production method of an improved solar cell is described.

Description

태양전지와 그 제조방법 Solar cell and a method of manufacturing the same

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음 This information did not disclose more professional information because lumbar Articles

제1도는 본 발명에 따른 개선된 태양전지의 평면도, 제2도는 전면에 인접한 얕은 pn 접합(점선으로 보임), 전면의 반사방지 물질의 코팅과, 배면에 부착된 전기접점을 갖는 반도체 기재의 일부를 보인 단면도, 제3도는 반도체 기재의 배면에 부착된 전기접점의 개방공내에 전도성 페이스트 또는 잉크가 도포된 것을 보이고, 반사방지 물질코팅의 전면에 유리프리트를 함유하는 잉크 또는 페이스트로 형성된 기다랗고 좁으며 평행한 세폭부 어레이의 배열구성을 보인 단면도. The first turning part of the semiconductor substrate with an improved top view of a solar cell, a second front shallow pn junction (shown by a broken line), of the front anti-reflective material coated with, electrical contacts attached to the back surface adjacent to the turning according to the present invention the shown section, the third turn shows that the conductive paste or ink is applied into the open hole of the electrical contacts attached to the back surface of the semiconductor substrate, narrow wait formed of a front ink or paste containing glass frit on the anti-reflective material coated ratgo was cross-sectional view showing an arrangement structure of a parallel three pokbu array.

Claims (20)

  1. 태양 전지에 있어서, 전면, 배면 및 상기 전면에 인접한 얕은 pn 접합을 갖는 반도체 기재, 상기 배면에 기계적이고 전기적으로 접촉되게 부착된 제1전극, 상기 제1면에 기계적이고 저저항의 전기적으로 접촉되게 부착된 제1전극, 상기 제1면에 기계적이고 저저항의 전기적으로 접촉되게 부착된 기다랗고 좁으며 평행한 제2전극의 어레이와, 상기 각 제2전극에 직각으로 상기 어레이를 가로질러 연장된 적어도 하나의 제3극으로 구성되고, 상기 제3극은 상기 각 제2전극에 전기적으로 접촉하고 상기 반도체 기재의 전면으로부터 이동배치됨을 특징으로 하는 태양전지. In the solar cell, a front, a back and a semiconductor substrate having a shallow pn junction adjacent the front, are attached in contact with the back surface by mechanical and electrically a first electrode, and the machine on the first surface in contact with an electrical low-resistance the attachment of the first electrode, and the array of second electrodes wherein the first wait is attached in contact with the electrical machine and a low resistance on the front narrow ratgo were parallel, extending across the array orthogonal to the respective second electrode at least one is composed of a third electrode, the third electrode is a solar cell, characterized by moving disposed from the front surface of the electric contact and the semiconductor substrate in each of the second electrode.
  2. 청구범위 1항에 있어서, 상기 반도체 기재의 전면에 배치되는 반사방지 물질의 층이 구성되어 있으며 상기 반사방지 물질 상기 각 제2전극에 접하여 있음을 특징으로 하는 태양전지. According to claims 1, wherein a layer of anti-reflection material disposed on a front surface of the semiconductor substrate and the solar cell is configured, characterized in that the tangent to each of the second electrode wherein the anti-reflective material.
  3. 청구범위 2항에 있어서, 상기 반도체 기재가 실리콘으로 구성되고 상기 반사방지 코팅이 질화실리콘으로 구성됨을 특징으로 하는 태양전지. According to claims 2, wherein the semiconductor substrate is a silicon solar cell according to claim wherein the anti-reflection coating is composed of a silicon nitride.
  4. 청구범위 2항에 있어서, 상기 제2극이 상기 반사방지물질을 통하여 침투하여 상기 반도체기재의 상기 전면에 접착토록 가열되는 은입자와 유리프리트를 함유하는 페이스트 또는 잉크로 구성됨을 특징으로 하는 태양전지. According to claims 2, wherein the second pole to penetrate through the anti-reflective material is heated ever bonded to the front surface of the semiconductor substrate is a solar cell, characterized by consisting of a paste or ink containing silver particles and a glass frit .
  5. 청구범위 2항에 있어서, 상기 제3극이 상기 반사방지코팅에 점착되는 물질로 구성됨을 특징으로 하는 태양전지. According to claims 2, wherein the third electrode solar cell which is characterized by consisting of a material that is applied to the antireflective coating.
  6. 청구범위 5항에 있어서, 상기 제3전극의 상기 물질이 전도성 입자를 함유하는 에폭시임을 특징으로 하는 태양전지. According to claims 5, wherein the solar cells, characterized in that the material of the third electrodes epoxy-containing conductive particle.
  7. 청구범위 6항에 있어서, 상기 에폭시에 포함된 상기 전도성 입자가 은임을 특징으로 하는 태양전지. According to claims 6, wherein the conductive particles contained in the epoxy has a solar cell as claimed.
  8. 청구범위 5항에 있어서, 상기 제3전극의 물질이 상기 반사방지코팅 내에 매입되게 가열되는 금속입자 및 유리프리트 함유의 페이스트 또는 잉크임을 특징으로 하는 태양전지. According to claims 5, wherein the solar cells, characterized in that the material of said third electrode paste or ink containing metal particles and glass frit to be heated to be embedded in the anti-reflective coating.
  9. 청구범위 8항에 있어서, 상기 잉크 또는 페이스트에 함유된 금속이 은임을 특징으로 하는 태양전지. According to claims 8 wherein the metal contained in the ink or paste it is characterized in that the solar cell.
  10. 태양전지의 제조 방법에 있어서, 이 방법이 (a) 전면, 배면, 상기 전면에 인접한 얕은 pn 접합과, 상기 배면에 기계적이고 전기적으로 접촉된 제1전극을 갖는 반도체 기재를 제공하는 단계, (b) 상기 반도체 기재의 상기 전면에 기다랗고 좁으며 평행한 제2전극을 형성하여 상기 각 제2전극이 상기 반도체 기재의 상기 전면에 기계적으로 접착되고 저저항으로 전기적으로 접촉되게 하는 단계와, (c) 상기 각 제2전극에 적어도 하나의 기다란 제3전극을 부착하여 상기 제3전극이 상기 각 제2전극에 대하여 직각으로 상기 어레이를 가로질러 연장되고 상기 반도체 기재의 상기 전면으로부터 이동 배치되게 하는 단계로 구성됨을 특징으로 하는 태양전지의 제조 방법. A method of manufacturing a solar cell, comprising the steps of a method to provide (a) a front, a back, a shallow pn junction adjacent to the front surface, the semiconductor substrate having a first electrode in contact with the back surface by mechanical, electrical, (b ) comprising the steps of: causing the respective second electrode to form the front surface the second electrode a wait narrow was parallel ratgo on the semiconductor substrate is adhered mechanically to the front surface of the semiconductor substrate in electrical contact with a low resistance, (c ) steps to cause the third electrode extends across said array at a right angle with respect to each of the second electrode arrangement moves from the front surface of the semiconductor substrate by attaching at least one elongated third electrodes of each of said second electrodes method for manufacturing a solar cell, characterized by consisting of a.
  11. 청구범위 10항에 있어서, 상기 반도체 기재가 상기 전면에 반사방지물질의 코팅을 포함하고, 상기 제2전극의 상기 어레이를 형성하는 단계가 선택적으로 요구된 어레이의 패턴으로 금속입자와 유리프리트를 함유하는 제1페이스트 또는 잉크로 상기 반사방지물질을 코팅하는 단계와, 상기 제1페이스트 또는 잉크가 상기 반사방지 물질을 침투하여 상기 반도체 기재의 상기 전면에 기계적으로 접착되고 저저항의 전기적으로 접촉될 수 있는 온도와 시간에서 반도체 기재를 가열하는 단계를 포함함을 특징으로 하는 방법. According to claims 10, wherein the optionally containing a pattern of metal particles and a glass frit of the desired array that the semiconductor substrate is formed the array of the second electrode, and a coating of anti-reflective material on the front face claim 1 comprising the steps of: coating the anti-reflective material into a paste or ink, the first paste or ink to penetrate the anti-reflective material is mechanically bonded to said front surface of the semiconductor substrate can be contacted with the electrically low resistance to characterized in that it comprises the step of heating the semiconductor substrate at a temperature and time.
  12. 청구범위 11항에 있어서, 상기 반도체 기재가 실리콘이고 상기 반사방지코팅이 질화실리콘임을 특징으로 하는 방법. According to claims 11, wherein the semiconductor substrate is silicon and the method characterized in that said anti-reflection coating of silicon nitride.
  13. 청구범위 11항에 있어서, 상기 제1페이스트 또는 잉크에 함유된 금속 입자가 음임을 특징으로 하는 방법. According to claims 11, characterized in that said first paste or the metal particles contained in the ink is negative.
  14. 청구범위 11항에 있어서, 상기 제2전극에 상기 제3전극을 부착하는 단계가 선택적으로 금속입자와 유리프리트를 함유하는 제2잉크 또는 페이스트로 상기 반사방지코팅을 도포하는 단계와, 상기 제2잉크 또는 페이스트가 상기 반사방지 물질을 통하여 부분적으로 침투하여 이에 접착토록 하는 온도와 시간에서 상기 반도체 기재를 가열하는 단계를 포함함을 특징으로 하는 방법. According to claims 11, further comprising applying the anti-reflective coating to the second ink or paste, a step of attaching the third electrode to the second electrode, which optionally contains metal particles and glass frit, the second characterized in that it comprises the step of heating the semiconductor substrate at a temperature and time for ever ink or paste to partially penetrate into this adhesive through the anti-reflective material.
  15. 청구범위 14항에 있어서, 상기 제2전극의 상기 어레이를 형성하고 상기 제3전극을 부착하는 상기 단계들이 조합되어 상기 제1잉크 또는 페이스트가 요구된 어레이 패턴으로 상기 반사방지코팅 상에 선택적으로 도포되고, 상기 제2잉크 또는 페이스트가 상기 반사방지 코팅과 상기 제1잉크 또는 페이스트의 상기 코팅 상에 요구된 패턴에 따라 선택적으로 도포되고, 이후에 반도체 기재가 사전에 선택된 온도에서 사전에 선택된 시간동안 가열되고 상기 제1및 제2잉크 또는 페이스트는 상기 어레이 펴턴이 상기 반사방지코팅을 통하여 침투하여 상기 반도체 기재의 전면에 기계적으로 접착되고 저저항의 전기적으로 접촉토록 하여 상기 제2잉크 또는 페이스트가 기계적으로 접착하고 상기 각 제2전극과 저저항의 전기적으로 접촉토록 상기 반사 방지코팅을 According to claims 14, wherein the selective coating with the step of attaching the second and the third electrodes to form the array of electrodes in combination with the first ink or the array pattern of the paste is required on the anti-reflection coating and, the second ink or paste, wherein the anti-reflection coating and the first ink or be selectively applied in response to the coating the desired pattern on the paste, in after the semiconductor substrate pre-selected temperature for a selected time in advance heated and the first and second ink or paste to ever is the array pyeoteon is bonded to the mechanical contact with the low-resistance electrically to the front surface of the semiconductor substrate to penetrate through the anti-reflective coating is the second ink or paste mechanical adhesive and the anti-reflective coating in electrical contact with ever of each of the second electrodes and a low resistance to 통하여 부분적으로 침투하도록 선택됨을 특징으로 하는 방법. Characterized in that the selected to partially penetrate through.
  16. 청구범위 14항에 있어서, 상기 제2잉크 또는 패이스트에 함유된 금속 입자가 은임을 특징으로 하는 방법. According to claims 14, wherein the metal particles contained in the second ink or paste is characterized in that.
  17. 청구범위 11항에 있어서, 상기 제2전극에 제3전극을 부착하는 상기 단계가 선택적으로 요구된 패턴에 따라 전도성 입자를 함유하는 에폭시 물질로 상기 반사방지물질과 상기 제2전극의 어레이를 코팅하고 이후에 에폭시물질을 경화시키는 단계를 포함함을 특징으로 하는 방법. According to claims 11, wherein the epoxy material to the step of attaching the third electrode to the second electrode containing a conductive particle in accordance with an optionally desired pattern and coating the anti-reflective material and the array of the second electrode after the method characterized in that it comprises the step of curing the epoxy material to.
  18. 청구범위 17항에 있어서, 에폭시 내에 함유된 전도성 입자가 은임을 특징으로 하는 방법. According to claims 17, characterized in that the conductive particles contained in the epoxy is that the.
  19. 청구범위 14항에 있어서, 상기 제1잉크 또는 페이스트 내에 함유된 금속입자가 제2잉크 또는 페이스트 내에 함유된 금속입자와는 상이함을 특징으로 하는 방법. According to claims 14, wherein the metal particles contained in the first ink or paste, characterized in that different from the metal particles contained in the second ink or paste.
  20. 청구범위 14항에 있어서, 상기 제1잉크 페이스트가 직접 기록수단으로 상기 반사방지물질에 도포되고, 상기 제2페이스트 또는 잉크가 스크린 인쇄, 패드 인쇄와 직접 기록중의 하나로부터 선택된 수단에 의하여 도포됨을 특징으로 하는 방법. That method, the first ink paste is applied to the anti-reflective material to direct the recording means, and the second paste or ink is applied by a means selected from one of direct-write as screen printing, pad printing to claims 14, wherein the method of claim.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임. ※ Note: Will you disclose by the first application information.
KR1019930700382A 1991-06-11 1992-05-08 Solar cell and a method of manufacturing the same KR937001838A (en)

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JPH06500671A (en) 1994-01-20

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