KR930017212A - MESFET Manufacturing Method - Google Patents
MESFET Manufacturing Method Download PDFInfo
- Publication number
- KR930017212A KR930017212A KR1019920001210A KR920001210A KR930017212A KR 930017212 A KR930017212 A KR 930017212A KR 1019920001210 A KR1019920001210 A KR 1019920001210A KR 920001210 A KR920001210 A KR 920001210A KR 930017212 A KR930017212 A KR 930017212A
- Authority
- KR
- South Korea
- Prior art keywords
- inp
- layer
- inp layer
- mesfet
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims 2
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 claims abstract 3
- 238000005530 etching Methods 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 2
Abstract
반도체와 금속 게이트가 서로 접하는 MESFET에 있어서, 반도체와 금속게이트 사이에 질화일(PN)층을 형성시켜 역방향 누설전류를 감소시키기 때문에 종래의 반도체와 금속게이트가 바로 접해있을때의 단점인 쇼트키 장벽을 높일수 있기 때문에 이상적인 쇼트키 다이오드 특성을 갖는 반도체 소자를 제공한다.In the MESFET in which the semiconductor and the metal gate are in contact with each other, a nitride nitride (PN) layer is formed between the semiconductor and the metal gate to reduce the reverse leakage current. Since it can increase, the semiconductor device which has the ideal Schottky diode characteristic is provided.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도는 본 발명에 따른 MESFET 구조단면도.2 is a cross-sectional view of a MESFET structure according to the present invention.
Claims (1)
Publications (1)
Publication Number | Publication Date |
---|---|
KR930017212A true KR930017212A (en) | 1993-08-30 |
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