KR930005944B1 - Manufacturing method of semiconductor device - Google Patents
Manufacturing method of semiconductor deviceInfo
- Publication number
- KR930005944B1 KR930005944B1 KR8914450A KR890014450A KR930005944B1 KR 930005944 B1 KR930005944 B1 KR 930005944B1 KR 8914450 A KR8914450 A KR 8914450A KR 890014450 A KR890014450 A KR 890014450A KR 930005944 B1 KR930005944 B1 KR 930005944B1
- Authority
- KR
- South Korea
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63254101A JP2645478B2 (ja) | 1988-10-07 | 1988-10-07 | 半導体装置の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR930005944B1 true KR930005944B1 (en) | 1993-06-29 |
Family
ID=17260238
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR8914450A KR930005944B1 (en) | 1988-10-07 | 1989-10-07 | Manufacturing method of semiconductor device |
Country Status (4)
Country | Link |
---|---|
US (1) | US5426073A (ko) |
EP (1) | EP0362838A3 (ko) |
JP (1) | JP2645478B2 (ko) |
KR (1) | KR930005944B1 (ko) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0719737B2 (ja) * | 1990-02-28 | 1995-03-06 | 信越半導体株式会社 | S01基板の製造方法 |
EP0529888A1 (en) * | 1991-08-22 | 1993-03-03 | AT&T Corp. | Removal of substrate perimeter material |
EP0585872B1 (en) * | 1992-09-01 | 2000-03-29 | Dai Nippon Printing Co., Ltd. | Process for fabricating a phase shift photomask or phase shift photomask blank |
US5258323A (en) * | 1992-12-29 | 1993-11-02 | Honeywell Inc. | Single crystal silicon on quartz |
JP3113156B2 (ja) * | 1994-08-31 | 2000-11-27 | 信越半導体株式会社 | 半導体基板の製造方法 |
US5498570A (en) * | 1994-09-15 | 1996-03-12 | Micron Technology Inc. | Method of reducing overetch during the formation of a semiconductor device |
US6153501A (en) * | 1998-05-19 | 2000-11-28 | Micron Technology, Inc. | Method of reducing overetch during the formation of a semiconductor device |
US6051501A (en) * | 1996-10-09 | 2000-04-18 | Micron Technology, Inc. | Method of reducing overetch during the formation of a semiconductor device |
JP2923866B2 (ja) * | 1996-10-18 | 1999-07-26 | 日本電気株式会社 | 半導体装置の製造方法 |
US5723385A (en) * | 1996-12-16 | 1998-03-03 | Taiwan Semiconductor Manufacturing Company, Ltd | Wafer edge seal ring structure |
US6127245A (en) * | 1997-02-04 | 2000-10-03 | Micron Technology, Inc. | Grinding technique for integrated circuits |
JP3368799B2 (ja) | 1997-05-22 | 2003-01-20 | 住友電気工業株式会社 | Iii−v族化合物半導体ウェハおよびその製造方法 |
JPH1131695A (ja) * | 1997-07-10 | 1999-02-02 | Mitsubishi Electric Corp | 回路パターンが形成されたウェハおよびその製造方法 |
US6033997A (en) * | 1997-12-29 | 2000-03-07 | Siemens Aktiengesellschaft | Reduction of black silicon in semiconductor fabrication |
US6094965A (en) | 1998-05-29 | 2000-08-01 | Vlsi Technology, Inc. | Semiconductor calibration structures and calibration wafers for ascertaining layer alignment during processing and calibrating multiple semiconductor wafer coating systems |
JPH11349925A (ja) * | 1998-06-05 | 1999-12-21 | Fujimi Inc | エッジポリッシング用組成物 |
US6265314B1 (en) * | 1998-06-09 | 2001-07-24 | Advanced Micro Devices, Inc. | Wafer edge polish |
JP2001345294A (ja) | 2000-05-31 | 2001-12-14 | Toshiba Corp | 半導体装置の製造方法 |
US6482749B1 (en) * | 2000-08-10 | 2002-11-19 | Seh America, Inc. | Method for etching a wafer edge using a potassium-based chemical oxidizer in the presence of hydrofluoric acid |
DE10063469B4 (de) * | 2000-12-19 | 2004-03-25 | Micronas Gmbh | Verfahren zur Herstellung eines elektronischen Chips und mit dem Verfahren hergestellter elektronischer Chip |
JP3802507B2 (ja) * | 2002-05-20 | 2006-07-26 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
TWI341983B (en) * | 2003-02-12 | 2011-05-11 | Nissha Printing | Touch panel |
FR2852143B1 (fr) * | 2003-03-04 | 2005-10-14 | Soitec Silicon On Insulator | Procede de traitement preventif de la couronne d'une tranche multicouche |
JP2005026413A (ja) * | 2003-07-01 | 2005-01-27 | Renesas Technology Corp | 半導体ウエハ、半導体素子およびその製造方法 |
US20060172526A1 (en) * | 2003-10-16 | 2006-08-03 | United Microelectronics Corp. | Method for preventing edge peeling defect |
DE102005035728B3 (de) * | 2005-07-29 | 2007-03-08 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zum Reduzieren der Kontamination durch Entfernung eines Zwischenschichtdielektrikums von dem Substratrand |
JP4745038B2 (ja) * | 2005-11-30 | 2011-08-10 | 株式会社東芝 | 周縁部処理方法及び半導体装置の製造方法 |
DE102005063089A1 (de) * | 2005-12-30 | 2007-07-12 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zum Reduzieren der Kontaminierung durch Vorsehen einer Ätzstoppschicht am Substratrand |
US8178287B2 (en) * | 2006-09-08 | 2012-05-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist composition and method of forming a resist pattern |
TW200845302A (en) * | 2007-05-09 | 2008-11-16 | Promos Technologies Inc | A method of two-step backside etching |
JP4966116B2 (ja) * | 2007-07-09 | 2012-07-04 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
JP5542543B2 (ja) * | 2010-06-28 | 2014-07-09 | 株式会社東芝 | 半導体装置の製造方法 |
JP6676365B2 (ja) * | 2015-12-21 | 2020-04-08 | キヤノン株式会社 | 撮像装置の製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1269732C2 (de) * | 1962-12-24 | 1973-12-13 | Verfahren zum herstellen von halbleiteranordnungen | |
US4144099A (en) * | 1977-10-31 | 1979-03-13 | International Business Machines Corporation | High performance silicon wafer and fabrication process |
JPS553633A (en) * | 1978-06-20 | 1980-01-11 | Sharp Corp | Manufacturing semiconductor device |
JPS5758338A (en) * | 1980-09-26 | 1982-04-08 | Hitachi Ltd | Semiconductor integrated device |
JPS58100432A (ja) * | 1981-12-11 | 1983-06-15 | Hitachi Ltd | ウエハの面取り加工方法 |
JPS5958827A (ja) * | 1982-09-28 | 1984-04-04 | Toshiba Corp | 半導体ウエ−ハ、半導体ウエ−ハの製造方法及び半導体ウエ−ハの製造装置 |
US4638553A (en) * | 1982-12-08 | 1987-01-27 | International Rectifier Corporation | Method of manufacture of semiconductor device |
JPS59107520A (ja) * | 1982-12-13 | 1984-06-21 | Nippon Telegr & Teleph Corp <Ntt> | 半導体基板 |
JPS59188921A (ja) * | 1983-04-12 | 1984-10-26 | Nec Corp | 誘電体分離基板の製造方法 |
US4510176A (en) * | 1983-09-26 | 1985-04-09 | At&T Bell Laboratories | Removal of coating from periphery of a semiconductor wafer |
KR850004178A (ko) * | 1983-11-30 | 1985-07-01 | 야마모도 다꾸마 | 유전체 분리형 집적회로 장치의 제조방법 |
US4631804A (en) * | 1984-12-10 | 1986-12-30 | At&T Bell Laboratories | Technique for reducing substrate warpage springback using a polysilicon subsurface strained layer |
US4662956A (en) * | 1985-04-01 | 1987-05-05 | Motorola, Inc. | Method for prevention of autodoping of epitaxial layers |
IT1229640B (it) * | 1987-06-29 | 1991-09-04 | S G S Microelettronica S P A O | Processo di conformazione del bordo di fette di materiale semiconduttore e relativa apparecchiatura |
-
1988
- 1988-10-07 JP JP63254101A patent/JP2645478B2/ja not_active Expired - Fee Related
-
1989
- 1989-10-05 EP EP89118462A patent/EP0362838A3/en not_active Ceased
- 1989-10-07 KR KR8914450A patent/KR930005944B1/ko not_active IP Right Cessation
-
1993
- 1993-10-13 US US08/135,577 patent/US5426073A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5426073A (en) | 1995-06-20 |
JP2645478B2 (ja) | 1997-08-25 |
EP0362838A2 (en) | 1990-04-11 |
EP0362838A3 (en) | 1990-06-27 |
JPH02100319A (ja) | 1990-04-12 |
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Legal Events
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E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
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GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20050623 Year of fee payment: 13 |
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