KR920008916A - Semiconductor heating element - Google Patents

Semiconductor heating element Download PDF

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Publication number
KR920008916A
KR920008916A KR1019900016553A KR900016553A KR920008916A KR 920008916 A KR920008916 A KR 920008916A KR 1019900016553 A KR1019900016553 A KR 1019900016553A KR 900016553 A KR900016553 A KR 900016553A KR 920008916 A KR920008916 A KR 920008916A
Authority
KR
South Korea
Prior art keywords
heating element
semiconductor heating
semiconductor
type semiconductor
semiconductors
Prior art date
Application number
KR1019900016553A
Other languages
Korean (ko)
Inventor
오성희
Original Assignee
오성희
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오성희 filed Critical 오성희
Priority to KR1019900016553A priority Critical patent/KR920008916A/en
Publication of KR920008916A publication Critical patent/KR920008916A/en

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/82Connection of interconnections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/85Thermoelectric active materials

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  • Resistance Heating (AREA)

Abstract

내용 없음No content

Description

반도체 발열체Semiconductor heating element

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명의 구성도.1 is a block diagram of the present invention.

Claims (1)

일측은 N형 반도체(1)로 하고 타측을 p형 반도체(2)로 하여 이를 접합한 후 각각의 반도체(1)(2)에 리드선(1')(2')을 접합 구성한 반도체 발열체.A semiconductor heating element in which one side is an N-type semiconductor (1), the other side is a p-type semiconductor (2), and the lead wires (1 ', 2') are bonded to each of the semiconductors (1) (2). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900016553A 1990-10-17 1990-10-17 Semiconductor heating element KR920008916A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900016553A KR920008916A (en) 1990-10-17 1990-10-17 Semiconductor heating element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900016553A KR920008916A (en) 1990-10-17 1990-10-17 Semiconductor heating element

Publications (1)

Publication Number Publication Date
KR920008916A true KR920008916A (en) 1992-05-28

Family

ID=67739267

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900016553A KR920008916A (en) 1990-10-17 1990-10-17 Semiconductor heating element

Country Status (1)

Country Link
KR (1) KR920008916A (en)

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Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application