KR920008884A - Exposure Method of Semiconductor Wafer - Google Patents

Exposure Method of Semiconductor Wafer Download PDF

Info

Publication number
KR920008884A
KR920008884A KR1019900016277A KR900016277A KR920008884A KR 920008884 A KR920008884 A KR 920008884A KR 1019900016277 A KR1019900016277 A KR 1019900016277A KR 900016277 A KR900016277 A KR 900016277A KR 920008884 A KR920008884 A KR 920008884A
Authority
KR
South Korea
Prior art keywords
semiconductor wafer
exposure method
shifting
reticle
wafer stage
Prior art date
Application number
KR1019900016277A
Other languages
Korean (ko)
Other versions
KR940000907B1 (en
Inventor
신필식
Original Assignee
문정환
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019900016277A priority Critical patent/KR940000907B1/en
Publication of KR920008884A publication Critical patent/KR920008884A/en
Application granted granted Critical
Publication of KR940000907B1 publication Critical patent/KR940000907B1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

내용 없음No content

Description

반도체 웨이퍼의 노광방법Exposure Method of Semiconductor Wafer

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제5도는 본 발명에 따라 2장의 레티클을 사용하는 경우를 나타낸 도면.5 is a view showing a case of using two reticles in accordance with the present invention.

Claims (3)

웨이퍼 스테이지를 시프트하여 다수의 레티클을 차례로 정렬 및 노광을 행하는 반도체 웨이퍼의 노광방법.An exposure method of a semiconductor wafer for shifting a wafer stage to align and expose a plurality of reticles in sequence. 제1항에 있어서, 정렬을 위하여 레티클에서 정렬을 위한 키를 제외한 부분은 크롬으로 막아 식각을 방지하는 반도체 웨이퍼의 노광방법.The method of claim 1, wherein the portion of the reticle except for the alignment key in the reticle is prevented by etching with chromium. 제1항에 있어서, 웨이퍼 스테이지의 시프트 대신에 캐논스태퍼의 패치잡을 사용하는 반도체 웨이퍼의 노광 방법.The semiconductor wafer exposure method according to claim 1, wherein a patch job of a Canon stepper is used instead of shifting the wafer stage. ※ 참고사항：최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900016277A 1990-10-13 1990-10-13 Exposing method of semiconductor device fabricating process KR940000907B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900016277A KR940000907B1 (en) 1990-10-13 1990-10-13 Exposing method of semiconductor device fabricating process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900016277A KR940000907B1 (en) 1990-10-13 1990-10-13 Exposing method of semiconductor device fabricating process

Publications (2)

Publication Number Publication Date
KR920008884A true KR920008884A (en) 1992-05-28
KR940000907B1 KR940000907B1 (en) 1994-02-04

Family

ID=19304622

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900016277A KR940000907B1 (en) 1990-10-13 1990-10-13 Exposing method of semiconductor device fabricating process

Country Status (1)

Country Link
KR (1) KR940000907B1 (en)

Also Published As

Publication number Publication date
KR940000907B1 (en) 1994-02-04

Similar Documents

Publication Publication Date Title
EP0810474A3 (en) Pattern exposing method using phase shift and mask used therefor
KR940022693A (en) Fine pattern formation method
KR910008486A (en) Exposure mask
KR920008884A (en) Exposure Method of Semiconductor Wafer
KR960005756A (en) Photomask Manufacturing Method for Semiconductor Device Manufacturing
KR937000886A (en) Formation method of fine resist pattern
KR970076093A (en) Positioning of registration mark of photomask and exposure method using it
KR960032580A (en) Reticle and manufacturing method of semiconductor device using same
KR970072003A (en) Reticle with simulated pattern
KR950014983A (en) Photo etching method
KR970049050A (en) Ambient Exposure Mask for Semiconductor Wafers
KR950015584A (en) Manufacturing Method of Semiconductor Device
KR950030258A (en) Photomask Manufacturing Method
KR920020591A (en) Method for manufacturing phase shift mask of semiconductor device
KR920020586A (en) Fine pattern formation method
KR970016762A (en) How to make a half-tone phase reversal mask
KR920015647A (en) How to remove photosensitizer
KR960039113A (en) How to form an alignment mark
KR920003407A (en) Reticle with Scum Prevention Line
KR970022511A (en) Mask manufacturing method
JPS55138835A (en) Method of forming photoresist pattern
KR970028812A (en) Reticle for Photo Processing
KR970028814A (en) Reticles for Semiconductor Device Manufacturing
KR980003801A (en) Phase inversion mask
KR970022503A (en) Bit line forming method of semiconductor memory device and photomask used therein

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20090121

Year of fee payment: 16

LAPS Lapse due to unpaid annual fee