KR920005633B1 - 알미늄 드라이 에칭법 - Google Patents

알미늄 드라이 에칭법 Download PDF

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Publication number
KR920005633B1
KR920005633B1 KR1019880003266A KR880003266A KR920005633B1 KR 920005633 B1 KR920005633 B1 KR 920005633B1 KR 1019880003266 A KR1019880003266 A KR 1019880003266A KR 880003266 A KR880003266 A KR 880003266A KR 920005633 B1 KR920005633 B1 KR 920005633B1
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KR
South Korea
Prior art keywords
etching
substrate
etching method
layer
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019880003266A
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English (en)
Korean (ko)
Other versions
KR880011893A (ko
Inventor
모리다까 나까무라
다까시 구리모또
Original Assignee
후지쓰 가부시끼가이샤
야마모도 다꾸마
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 후지쓰 가부시끼가이샤, 야마모도 다꾸마 filed Critical 후지쓰 가부시끼가이샤
Publication of KR880011893A publication Critical patent/KR880011893A/ko
Application granted granted Critical
Publication of KR920005633B1 publication Critical patent/KR920005633B1/ko
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas

Landscapes

  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1019880003266A 1987-03-27 1988-03-25 알미늄 드라이 에칭법 Expired KR920005633B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62-71737 1987-03-27
JP62071737A JPS63238288A (ja) 1987-03-27 1987-03-27 ドライエツチング方法
JP62-071737 1987-03-27

Publications (2)

Publication Number Publication Date
KR880011893A KR880011893A (ko) 1988-10-31
KR920005633B1 true KR920005633B1 (ko) 1992-07-10

Family

ID=13469137

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880003266A Expired KR920005633B1 (ko) 1987-03-27 1988-03-25 알미늄 드라이 에칭법

Country Status (5)

Country Link
US (1) US4798650A (https=)
EP (1) EP0289131B1 (https=)
JP (1) JPS63238288A (https=)
KR (1) KR920005633B1 (https=)
DE (1) DE3871851T2 (https=)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0297898B1 (en) * 1987-07-02 1995-10-11 Kabushiki Kaisha Toshiba Method of dry etching
JPS6432633A (en) * 1987-07-29 1989-02-02 Hitachi Ltd Taper etching method
US5147500A (en) * 1987-07-31 1992-09-15 Hitachi, Ltd. Dry etching method
US5316616A (en) * 1988-02-09 1994-05-31 Fujitsu Limited Dry etching with hydrogen bromide or bromine
KR930001500B1 (ko) * 1988-02-09 1993-03-02 후지쓰 가부시끼가이샤 취화수소 또는 취소로 건식 식각하는 방법
JPH0478133A (ja) * 1990-07-20 1992-03-12 Tokyo Electron Ltd プラズマ処理装置
US5259922A (en) * 1990-08-14 1993-11-09 Matsushita Electric Industrial Co., Ltd. Drying etching method
JPH05109728A (ja) * 1991-10-16 1993-04-30 Nec Corp 半導体装置の製造方法
US5460684A (en) * 1992-12-04 1995-10-24 Tokyo Electron Limited Stage having electrostatic chuck and plasma processing apparatus using same
US5350488A (en) * 1992-12-10 1994-09-27 Applied Materials, Inc. Process for etching high copper content aluminum films
US5591301A (en) * 1994-12-22 1997-01-07 Siemens Aktiengesellschaft Plasma etching method
JPH09172001A (ja) * 1995-12-15 1997-06-30 Sony Corp 半導体製造装置の温度制御方法および装置
US5849641A (en) * 1997-03-19 1998-12-15 Lam Research Corporation Methods and apparatus for etching a conductive layer to improve yield
US6432812B1 (en) * 2001-07-16 2002-08-13 Lsi Logic Corporation Method of coupling capacitance reduction
KR100541152B1 (ko) * 2003-07-18 2006-01-11 매그나칩 반도체 유한회사 반도체 소자의 금속 배선층 형성 방법
US20060000553A1 (en) * 2004-06-30 2006-01-05 Arun Ramamoorthy Minimizing particle contamination of semiconductor wafers during pressure evacuation by selective orientation and shielding
JP4519567B2 (ja) * 2004-08-11 2010-08-04 株式会社日立ハイテクノロジーズ 走査型電子顕微鏡およびこれを用いた試料観察方法
US8157951B2 (en) * 2005-10-11 2012-04-17 Applied Materials, Inc. Capacitively coupled plasma reactor having very agile wafer temperature control
US8034180B2 (en) * 2005-10-11 2011-10-11 Applied Materials, Inc. Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor
US8092638B2 (en) * 2005-10-11 2012-01-10 Applied Materials Inc. Capacitively coupled plasma reactor having a cooled/heated wafer support with uniform temperature distribution
US20070091540A1 (en) * 2005-10-20 2007-04-26 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor using multiple zone feed forward thermal control
US9767988B2 (en) * 2010-08-29 2017-09-19 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
US12505980B2 (en) * 2009-05-01 2025-12-23 Advanced Energy Industries, Inc. Apparatus to produce a waveform
US11615941B2 (en) 2009-05-01 2023-03-28 Advanced Energy Industries, Inc. System, method, and apparatus for controlling ion energy distribution in plasma processing systems
US8431486B2 (en) * 2010-08-10 2013-04-30 International Business Machines Corporation Interconnect structure for improved time dependent dielectric breakdown
KR101800321B1 (ko) * 2016-04-18 2017-11-22 최상준 건식 에칭장치
KR101913684B1 (ko) * 2016-10-21 2018-11-01 주식회사 볼트크리에이션 건식 에칭장치 및 그 제어방법
US12567572B2 (en) 2023-07-11 2026-03-03 Advanced Energy Industries, Inc. Plasma behaviors predicted by current measurements during asymmetric bias waveform application

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5744747A (en) * 1980-08-29 1982-03-13 Toyota Motor Corp Controlling device of air-fuel ratio
US4384918A (en) * 1980-09-30 1983-05-24 Fujitsu Limited Method and apparatus for dry etching and electrostatic chucking device used therein
JPS57116774A (en) * 1981-01-14 1982-07-20 Hitachi Ltd Etching method
US4462882A (en) * 1983-01-03 1984-07-31 Massachusetts Institute Of Technology Selective etching of aluminum
JPS6159658A (ja) * 1984-08-29 1986-03-27 Pioneer Electronic Corp デイスクロ−デイング機構
GB2171360A (en) * 1985-02-19 1986-08-28 Oerlikon Buehrle Inc Etching aluminum/copper alloy films
DE3752140T2 (de) * 1986-09-05 1998-03-05 Hitachi Ltd Trockenes Ätzverfahren

Also Published As

Publication number Publication date
JPS63238288A (ja) 1988-10-04
EP0289131A1 (en) 1988-11-02
JPH0428791B2 (https=) 1992-05-15
KR880011893A (ko) 1988-10-31
DE3871851D1 (de) 1992-07-16
EP0289131B1 (en) 1992-06-10
DE3871851T2 (de) 1992-12-03
US4798650A (en) 1989-01-17

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