KR910017665A - Semiconductor device manufacturing method - Google Patents
Semiconductor device manufacturing method Download PDFInfo
- Publication number
- KR910017665A KR910017665A KR1019900003000A KR900003000A KR910017665A KR 910017665 A KR910017665 A KR 910017665A KR 1019900003000 A KR1019900003000 A KR 1019900003000A KR 900003000 A KR900003000 A KR 900003000A KR 910017665 A KR910017665 A KR 910017665A
- Authority
- KR
- South Korea
- Prior art keywords
- ion implantation
- semiconductor device
- device manufacturing
- etched
- silicon
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims 2
- 239000004065 semiconductor Substances 0.000 title claims 2
- 238000000034 method Methods 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims 3
- 238000002955 isolation Methods 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 238000000137 annealing Methods 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000001312 dry etching Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 238000001039 wet etching Methods 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
내용 없음No content
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제 1도는 본 발명의 공정순서도.1 is a process flow chart of the present invention.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019900003000A KR930004722B1 (en) | 1990-03-07 | 1990-03-07 | Manufacturing method of semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019900003000A KR930004722B1 (en) | 1990-03-07 | 1990-03-07 | Manufacturing method of semiconductor element |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910017665A true KR910017665A (en) | 1991-11-05 |
KR930004722B1 KR930004722B1 (en) | 1993-06-03 |
Family
ID=19296743
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900003000A KR930004722B1 (en) | 1990-03-07 | 1990-03-07 | Manufacturing method of semiconductor element |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR930004722B1 (en) |
-
1990
- 1990-03-07 KR KR1019900003000A patent/KR930004722B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR930004722B1 (en) | 1993-06-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20050524 Year of fee payment: 13 |
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LAPS | Lapse due to unpaid annual fee |