KR910013484A - Silicon oxide film formation method using non-reactive gas - Google Patents

Silicon oxide film formation method using non-reactive gas Download PDF

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Publication number
KR910013484A
KR910013484A KR1019890018836A KR890018836A KR910013484A KR 910013484 A KR910013484 A KR 910013484A KR 1019890018836 A KR1019890018836 A KR 1019890018836A KR 890018836 A KR890018836 A KR 890018836A KR 910013484 A KR910013484 A KR 910013484A
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KR
South Korea
Prior art keywords
oxide film
silicon oxide
reactive gas
film formation
formation method
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KR1019890018836A
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Korean (ko)
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KR0156102B1 (en
Inventor
김희석
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문정환
금성일렉트론 주식회사
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Priority to KR1019890018836A priority Critical patent/KR0156102B1/en
Publication of KR910013484A publication Critical patent/KR910013484A/en
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Publication of KR0156102B1 publication Critical patent/KR0156102B1/en

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Abstract

내용 없음.No content.

Description

비반응성 가스를 이용한 실리콘 산화막 형성방법Silicon oxide film formation method using non-reactive gas

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명의 실리콘 산화막을 형성하기 위한 장치의 개략 구성도,1 is a schematic configuration diagram of an apparatus for forming a silicon oxide film of the present invention,

제2도는 본발명과 종래의 방법과의 실리콘 표면도를 비교한 비교그래프.Figure 2 is a comparison graph comparing the silicon surface of the present invention and the conventional method.

Claims (1)

전기로(1) 내에 웨이퍼(3)가 끼워진 보우트(2)를 넣고 비반응성 가스인 질소(N2)를 주입시켜 실리콘 산화막이 성장되는 온도 복귀시간을 10분이상 20분까지 증가시키므로 웨이퍼(3)에 균일하고 재현성이 좋은 실리콘 산화막을 형성하게 함을 특징으로하는 비반응성 가스를 이용한 실리콘 산화막 형성방법.Since the boat 2 into which the wafer 3 is inserted is inserted into the electric furnace 1, nitrogen (N 2 ), which is a non-reactive gas, is injected to increase the temperature return time at which the silicon oxide film is grown to 10 minutes to 20 minutes. A method for forming a silicon oxide film using a non-reactive gas, characterized by forming a uniform and reproducible silicon oxide film. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019890018836A 1989-12-18 1989-12-18 Oxidation method using inert gas KR0156102B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890018836A KR0156102B1 (en) 1989-12-18 1989-12-18 Oxidation method using inert gas

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890018836A KR0156102B1 (en) 1989-12-18 1989-12-18 Oxidation method using inert gas

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KR910013484A true KR910013484A (en) 1991-08-08
KR0156102B1 KR0156102B1 (en) 1998-12-01

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Application Number Title Priority Date Filing Date
KR1019890018836A KR0156102B1 (en) 1989-12-18 1989-12-18 Oxidation method using inert gas

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KR0156102B1 (en) 1998-12-01

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