KR910007835B1 - 1차입자 비임 조사장치 및 그의 조사방법 - Google Patents

1차입자 비임 조사장치 및 그의 조사방법 Download PDF

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Publication number
KR910007835B1
KR910007835B1 KR1019870010878A KR870010878A KR910007835B1 KR 910007835 B1 KR910007835 B1 KR 910007835B1 KR 1019870010878 A KR1019870010878 A KR 1019870010878A KR 870010878 A KR870010878 A KR 870010878A KR 910007835 B1 KR910007835 B1 KR 910007835B1
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KR
South Korea
Prior art keywords
primary particle
particle beam
secondary ion
irradiation
ion sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019870010878A
Other languages
English (en)
Korean (ko)
Other versions
KR880004550A (ko
Inventor
하루히사 모리
다다유끼 고지마
사또시 하수이
히로시 오오모리
슈지 기구찌
Original Assignee
후지쓰 가부시끼가이샤
야마모도 다꾸마
도오꾜 일렉트론 가부시끼가이샤
고다까도시오
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지쓰 가부시끼가이샤, 야마모도 다꾸마, 도오꾜 일렉트론 가부시끼가이샤, 고다까도시오 filed Critical 후지쓰 가부시끼가이샤
Publication of KR880004550A publication Critical patent/KR880004550A/ko
Application granted granted Critical
Publication of KR910007835B1 publication Critical patent/KR910007835B1/ko
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Particle Accelerators (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1019870010878A 1986-09-30 1987-09-30 1차입자 비임 조사장치 및 그의 조사방법 Expired KR910007835B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP61229969A JPS6386340A (ja) 1986-09-30 1986-09-30 一次粒子線照射装置
JP61-229969 1986-09-30
JP229969 1986-09-30

Publications (2)

Publication Number Publication Date
KR880004550A KR880004550A (ko) 1988-06-04
KR910007835B1 true KR910007835B1 (ko) 1991-10-02

Family

ID=16900545

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870010878A Expired KR910007835B1 (ko) 1986-09-30 1987-09-30 1차입자 비임 조사장치 및 그의 조사방법

Country Status (5)

Country Link
US (1) US4785188A (https=)
EP (1) EP0263032B1 (https=)
JP (1) JPS6386340A (https=)
KR (1) KR910007835B1 (https=)
DE (1) DE3771982D1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL9000822A (nl) * 1990-04-09 1991-11-01 Philips Nv Werkwijze voor bestraling van een object met een geladen deeltjesbundel en inrichting voor uitvoering van de werkwijze.
JP2648642B2 (ja) * 1990-04-17 1997-09-03 アプライド マテリアルズ インコーポレイテッド 巾広ビームでイオンインプランテーションを行なう方法及び装置
JP2969788B2 (ja) * 1990-05-17 1999-11-02 日新電機株式会社 イオンビームの平行度測定方法、走査波形整形方法およびイオン注入装置
US5311028A (en) * 1990-08-29 1994-05-10 Nissin Electric Co., Ltd. System and method for producing oscillating magnetic fields in working gaps useful for irradiating a surface with atomic and molecular ions
US5572038A (en) * 1993-05-07 1996-11-05 Varian Associates, Inc. Charge monitor for high potential pulse current dose measurement apparatus and method
US5859437A (en) * 1997-03-17 1999-01-12 Taiwan Semiconductor Manufacturing Corporation Intelligent supervision system with expert system for ion implantation process
US6061115A (en) * 1998-11-03 2000-05-09 International Business Machines Incorporation Method of producing a multi-domain alignment layer by bombarding ions of normal incidence
US6519018B1 (en) 1998-11-03 2003-02-11 International Business Machines Corporation Vertically aligned liquid crystal displays and methods for their production
US6313896B1 (en) 1999-08-31 2001-11-06 International Business Machines Corporation Method for forming a multi-domain alignment layer for a liquid crystal display device
US7358484B2 (en) * 2005-09-29 2008-04-15 Tokyo Electron Limited Hyperthermal neutral beam source and method of operating
KR101128757B1 (ko) * 2007-02-14 2012-04-12 아사히 가세이 케미칼즈 가부시키가이샤 연신 적층 필름 및 백
US8378317B1 (en) * 2011-09-07 2013-02-19 Gtat Corporation Ion implant apparatus and method of ion implantation

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3585397A (en) * 1968-10-04 1971-06-15 Hughes Aircraft Co Programmed fine ion implantation beam system
JPS55124936A (en) * 1979-03-22 1980-09-26 Hitachi Ltd Control method of beam current in ion drive
JPS57123639A (en) * 1981-01-23 1982-08-02 Agency Of Ind Science & Technol Method for monitoring ion current for ion implantation apparatus
JPS5856332A (ja) * 1981-09-30 1983-04-04 Hitachi Ltd マスクの欠陥修正方法
JPS599843A (ja) * 1982-07-07 1984-01-19 Akashi Seisakusho Co Ltd 走査型電子顕微鏡およびその類似装置における２次荷電粒子検出装置
US4539217A (en) * 1984-06-27 1985-09-03 Eaton Corporation Dose control method
JPS6139356A (ja) * 1984-07-30 1986-02-25 Hitachi Ltd イオン打込装置

Also Published As

Publication number Publication date
JPS6386340A (ja) 1988-04-16
KR880004550A (ko) 1988-06-04
US4785188A (en) 1988-11-15
DE3771982D1 (de) 1991-09-12
EP0263032A1 (en) 1988-04-06
JPH0526294B2 (https=) 1993-04-15
EP0263032B1 (en) 1991-08-07

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