KR910002813B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR910002813B1
KR910002813B1 KR1019840001232A KR840001232A KR910002813B1 KR 910002813 B1 KR910002813 B1 KR 910002813B1 KR 1019840001232 A KR1019840001232 A KR 1019840001232A KR 840001232 A KR840001232 A KR 840001232A KR 910002813 B1 KR910002813 B1 KR 910002813B1
Authority
KR
South Korea
Prior art keywords
electrode
silicide
semiconductor device
film
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019840001232A
Other languages
English (en)
Korean (ko)
Other versions
KR840008217A (ko
Inventor
야스히로 니시오가
노리유기 혼마
노리유기 사구마
기이지로우 무가이
Original Assignee
가부시기가이샤 히다찌세이사꾸쇼
미쓰다 가쓰시게
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시기가이샤 히다찌세이사꾸쇼, 미쓰다 가쓰시게 filed Critical 가부시기가이샤 히다찌세이사꾸쇼
Publication of KR840008217A publication Critical patent/KR840008217A/ko
Application granted granted Critical
Publication of KR910002813B1 publication Critical patent/KR910002813B1/ko
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/10—SRAM devices comprising bipolar components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 

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  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
KR1019840001232A 1983-03-18 1984-03-12 반도체 장치 Expired KR910002813B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP44179 1983-03-18
JP58-044179 1983-03-18
JP58044179A JPS59171157A (ja) 1983-03-18 1983-03-18 半導体装置

Publications (2)

Publication Number Publication Date
KR840008217A KR840008217A (ko) 1984-12-13
KR910002813B1 true KR910002813B1 (ko) 1991-05-04

Family

ID=12684348

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840001232A Expired KR910002813B1 (ko) 1983-03-18 1984-03-12 반도체 장치

Country Status (4)

Country Link
US (1) US4636833A (https=)
EP (1) EP0122459A3 (https=)
JP (1) JPS59171157A (https=)
KR (1) KR910002813B1 (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4809052A (en) * 1985-05-10 1989-02-28 Hitachi, Ltd. Semiconductor memory device
JP2617457B2 (ja) * 1985-11-29 1997-06-04 株式会社日立製作所 半導体装置およびその製造方法
JPS6379373A (ja) * 1986-09-24 1988-04-09 Hitachi Ltd 半導体装置およびその製造方法
US4803363A (en) * 1987-04-27 1989-02-07 Hughes Aircraft Company Infrared detector with integral feedback capacitance
US5189503A (en) * 1988-03-04 1993-02-23 Kabushiki Kaisha Toshiba High dielectric capacitor having low current leakage
JPH0817229B2 (ja) * 1988-03-31 1996-02-21 サンケン電気株式会社 半導体装置
US5168078A (en) * 1988-11-29 1992-12-01 Mcnc Method of making high density semiconductor structure
US5025304A (en) * 1988-11-29 1991-06-18 Mcnc High density semiconductor structure and method of making the same
JPH0677402A (ja) * 1992-07-02 1994-03-18 Natl Semiconductor Corp <Ns> 半導体デバイス用誘電体構造及びその製造方法
US5569487A (en) * 1995-01-23 1996-10-29 General Electric Company Capacitor dielectrics of silicon-doped amorphous hydrogenated carbon
JP2630292B2 (ja) * 1995-02-27 1997-07-16 日本電気株式会社 半導体装置の製造方法
US5708559A (en) * 1995-10-27 1998-01-13 International Business Machines Corporation Precision analog metal-metal capacitor
US6218260B1 (en) * 1997-04-22 2001-04-17 Samsung Electronics Co., Ltd. Methods of forming integrated circuit capacitors having improved electrode and dielectric layer characteristics and capacitors formed thereby
JPH1154706A (ja) * 1997-08-06 1999-02-26 Nec Corp Ｍｉｍキャパシタ及びその製造方法
US6303969B1 (en) 1998-05-01 2001-10-16 Allen Tan Schottky diode with dielectric trench
KR100363083B1 (ko) 1999-01-20 2002-11-30 삼성전자 주식회사 반구형 그레인 커패시터 및 그 형성방법
KR100317042B1 (ko) 1999-03-18 2001-12-22 윤종용 반구형 알갱이 실리콘을 가지는 실린더형 커패시터 및 그 제조방법
JP2003101036A (ja) * 2001-09-25 2003-04-04 Sanyo Electric Co Ltd ショットキーバリアダイオードおよびその製造方法
KR20020043815A (ko) 2000-12-04 2002-06-12 윤종용 반구형 그레인 커패시터의 제조방법
US6921702B2 (en) * 2002-07-30 2005-07-26 Micron Technology Inc. Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics
KR100552704B1 (ko) * 2003-12-17 2006-02-20 삼성전자주식회사 반도체 장치의 불휘발성 커패시터, 이를 포함하는 반도체메모리 소자 및 그 동작방법
US8513634B2 (en) * 2003-12-17 2013-08-20 Samsung Electronics Co., Ltd. Nonvolatile data storage, semicoductor memory device including nonvolatile data storage and method of forming the same
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US7592251B2 (en) 2005-12-08 2009-09-22 Micron Technology, Inc. Hafnium tantalum titanium oxide films

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3506893A (en) * 1968-06-27 1970-04-14 Ibm Integrated circuits with surface barrier diodes
DE2508553C3 (de) * 1975-02-27 1981-06-25 Siemens AG, 1000 Berlin und 8000 München Integrierte Halbleiterschaltungsanordnung
JPS5325383A (en) * 1976-08-23 1978-03-09 Hitachi Ltd Compound type capacitor in bipolar ic
JPS6058593B2 (ja) * 1976-10-01 1985-12-20 株式会社日立製作所 半導体メモリ
US4112314A (en) * 1977-08-26 1978-09-05 International Business Machines Corporation Logical current switch
US4211941A (en) * 1978-08-03 1980-07-08 Rca Corporation Integrated circuitry including low-leakage capacitance
US4245231A (en) * 1978-12-26 1981-01-13 Motorola Inc. Combination capacitor and transistor structure for use in monolithic circuits
JPS5685848A (en) * 1979-12-15 1981-07-13 Toshiba Corp Manufacture of bipolar integrated circuit
JPS5788774A (en) * 1980-11-25 1982-06-02 Hitachi Ltd Semiconductor device
JPS57206062A (en) * 1981-06-12 1982-12-17 Mitsubishi Electric Corp Semiconductor integrated circuit
JPS5823470A (ja) * 1981-08-06 1983-02-12 Oki Electric Ind Co Ltd 半導体装置
JPS5864062A (ja) * 1981-10-13 1983-04-16 Nec Corp 半導体記憶装置
JPS58127359A (ja) * 1982-01-25 1983-07-29 Hitachi Ltd 半導体接合容量装置

Also Published As

Publication number Publication date
EP0122459A2 (en) 1984-10-24
KR840008217A (ko) 1984-12-13
EP0122459A3 (en) 1986-02-05
US4636833A (en) 1987-01-13
JPH0558266B2 (https=) 1993-08-26
JPS59171157A (ja) 1984-09-27

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