KR910002036B1 - 반도체 집적 회로 장치 - Google Patents
반도체 집적 회로 장치 Download PDFInfo
- Publication number
- KR910002036B1 KR910002036B1 KR1019830000136A KR830000136A KR910002036B1 KR 910002036 B1 KR910002036 B1 KR 910002036B1 KR 1019830000136 A KR1019830000136 A KR 1019830000136A KR 830000136 A KR830000136 A KR 830000136A KR 910002036 B1 KR910002036 B1 KR 910002036B1
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- semiconductor
- region
- cross
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/65—Integrated injection logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Element Separation (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57008932A JPS58127363A (ja) | 1982-01-25 | 1982-01-25 | 半導体集積回路装置 |
| JP57-008932 | 1982-01-25 | ||
| JP57-8932 | 1982-01-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR840003536A KR840003536A (ko) | 1984-09-08 |
| KR910002036B1 true KR910002036B1 (ko) | 1991-03-30 |
Family
ID=11706432
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019830000136A Expired KR910002036B1 (ko) | 1982-01-25 | 1983-01-15 | 반도체 집적 회로 장치 |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS58127363A (enrdf_load_html_response) |
| KR (1) | KR910002036B1 (enrdf_load_html_response) |
| DE (1) | DE3302206A1 (enrdf_load_html_response) |
| FR (1) | FR2520555B1 (enrdf_load_html_response) |
| GB (2) | GB2113915B (enrdf_load_html_response) |
| HK (2) | HK71287A (enrdf_load_html_response) |
| IT (1) | IT1160470B (enrdf_load_html_response) |
| MY (1) | MY8700613A (enrdf_load_html_response) |
| SG (1) | SG36587G (enrdf_load_html_response) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3926011B2 (ja) | 1997-12-24 | 2007-06-06 | 株式会社ルネサステクノロジ | 半導体装置の設計方法 |
| JP4292668B2 (ja) * | 2000-01-31 | 2009-07-08 | 富士ゼロックス株式会社 | 発光サイリスタアレイ |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3443176A (en) * | 1966-03-31 | 1969-05-06 | Ibm | Low resistivity semiconductor underpass connector and fabrication method therefor |
| DE1949484B2 (de) * | 1969-10-01 | 1978-02-23 | Ibm Deutschland Gmbh, 7000 Stuttgart | Leitungskreuzung fuer monolithisch integrierte halbleiterschaltungen und deren verwendung in einer speichermatrix |
| FR2244262B1 (enrdf_load_html_response) * | 1973-09-13 | 1978-09-29 | Radiotechnique Compelec | |
| DE2514466B2 (de) * | 1975-04-03 | 1977-04-21 | Ibm Deutschland Gmbh, 7000 Stuttgart | Integrierte halbleiterschaltung |
| JPS5264830A (en) * | 1975-11-25 | 1977-05-28 | Hitachi Ltd | Power source supply system of integrated injection logical circuit |
| NL7700420A (nl) * | 1977-01-17 | 1978-07-19 | Philips Nv | Halfgeleiderinrichting en werkwijze ter ver- vaardiging daarvan. |
| US4228450A (en) * | 1977-10-25 | 1980-10-14 | International Business Machines Corporation | Buried high sheet resistance structure for high density integrated circuits with reach through contacts |
| DE3143565A1 (de) * | 1981-11-03 | 1983-05-11 | International Microcircuits Inc., 95051 Santa Clara, Calif. | Integrierte schaltung |
-
1982
- 1982-01-25 JP JP57008932A patent/JPS58127363A/ja active Granted
- 1982-11-26 FR FR8219859A patent/FR2520555B1/fr not_active Expired
-
1983
- 1983-01-15 KR KR1019830000136A patent/KR910002036B1/ko not_active Expired
- 1983-01-21 GB GB08301731A patent/GB2113915B/en not_active Expired
- 1983-01-21 IT IT19236/83A patent/IT1160470B/it active
- 1983-01-24 DE DE19833302206 patent/DE3302206A1/de not_active Withdrawn
-
1984
- 1984-02-08 GB GB08403188A patent/GB2133622B/en not_active Expired
-
1987
- 1987-04-23 SG SG365/87A patent/SG36587G/en unknown
- 1987-10-01 HK HK712/87A patent/HK71287A/xx not_active IP Right Cessation
- 1987-10-01 HK HK706/87A patent/HK70687A/xx not_active IP Right Cessation
- 1987-12-30 MY MY613/87A patent/MY8700613A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB8403188D0 (en) | 1984-03-14 |
| IT8319236A0 (it) | 1983-01-21 |
| FR2520555B1 (fr) | 1987-02-20 |
| JPS58127363A (ja) | 1983-07-29 |
| MY8700613A (en) | 1987-12-31 |
| HK70687A (en) | 1987-10-09 |
| GB2113915B (en) | 1985-11-20 |
| DE3302206A1 (de) | 1983-08-04 |
| GB2133622A (en) | 1984-07-25 |
| IT1160470B (it) | 1987-03-11 |
| JPH0334661B2 (enrdf_load_html_response) | 1991-05-23 |
| GB2133622B (en) | 1985-11-20 |
| GB8301731D0 (en) | 1983-02-23 |
| FR2520555A1 (fr) | 1983-07-29 |
| GB2113915A (en) | 1983-08-10 |
| KR840003536A (ko) | 1984-09-08 |
| SG36587G (en) | 1987-07-24 |
| HK71287A (en) | 1987-10-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4412142A (en) | Integrated circuit incorporating low voltage and high voltage semiconductor devices | |
| KR20010015835A (ko) | 반도체 장치 | |
| US4490629A (en) | High voltage circuits in low voltage CMOS process | |
| EP0596565B1 (en) | Novel device configuration with multiple HV-LDMOS transistors and a floating well circuit | |
| US5639680A (en) | Method of making analog multiplexer cell for mixed digital and analog signal inputs | |
| KR100334381B1 (ko) | 유도성부하소자용집적드라이버회로 | |
| US4994884A (en) | Gate-controlled bi-directional semiconductor switching device | |
| KR940000519B1 (ko) | 반도체 장치 | |
| EP0449093B1 (en) | Circuital arrangement for preventing latch-up phenomena in vertical PNP transistors with insulated collector | |
| US5051612A (en) | Prevention of parasitic mechanisms in junction isolated devices | |
| US4812891A (en) | Bipolar lateral pass-transistor for CMOS circuits | |
| KR910002036B1 (ko) | 반도체 집적 회로 장치 | |
| US4475280A (en) | Method of making an integrated circuit incorporating low voltage and high voltage semiconductor devices | |
| EP0041363B1 (en) | Schmitt trigger circuit with a hysteresis characteristic | |
| US5515007A (en) | Triple buffered amplifier output stage | |
| KR100867572B1 (ko) | 고전압 섬 영역 내에 바이폴라 트랜지스터가 내장된고전압 집적 회로 | |
| US4725745A (en) | Bi-MOS PLA | |
| EP0238671B1 (en) | Semiconductor device | |
| US5300805A (en) | Epitaxial tub bias structure for integrated circuits | |
| US4952998A (en) | Integrated circuit with complementary MOS transistors | |
| US4691221A (en) | Monolithically integrated bipolar Darlington circuit | |
| JPH0244805A (ja) | 集積電流ミラー回路 | |
| US5204543A (en) | Lateral type semiconductor device having a structure for eliminating turning-on of parasitic mos transistors formed therein | |
| JP3048790B2 (ja) | 半導体集積回路装置 | |
| GB2096828A (en) | Integrated circuit connections |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
St.27 status event code: A-0-1-A10-A12-nap-PA0109 |
|
| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| A201 | Request for examination | ||
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| G160 | Decision to publish patent application | ||
| PG1605 | Publication of application before grant of patent |
St.27 status event code: A-2-2-Q10-Q13-nap-PG1605 |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
St.27 status event code: A-2-4-F10-F11-exm-PR0701 |
|
| PR1002 | Payment of registration fee |
St.27 status event code: A-2-2-U10-U11-oth-PR1002 Fee payment year number: 1 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 4 |
|
| FPAY | Annual fee payment |
Payment date: 19950323 Year of fee payment: 5 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 5 |
|
| LAPS | Lapse due to unpaid annual fee | ||
| PC1903 | Unpaid annual fee |
St.27 status event code: A-4-4-U10-U13-oth-PC1903 Not in force date: 19960331 Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE |
|
| PC1903 | Unpaid annual fee |
St.27 status event code: N-4-6-H10-H13-oth-PC1903 Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE Not in force date: 19960331 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |