KR910002036B1 - 반도체 집적 회로 장치 - Google Patents

반도체 집적 회로 장치 Download PDF

Info

Publication number
KR910002036B1
KR910002036B1 KR1019830000136A KR830000136A KR910002036B1 KR 910002036 B1 KR910002036 B1 KR 910002036B1 KR 1019830000136 A KR1019830000136 A KR 1019830000136A KR 830000136 A KR830000136 A KR 830000136A KR 910002036 B1 KR910002036 B1 KR 910002036B1
Authority
KR
South Korea
Prior art keywords
layer
semiconductor
region
cross
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019830000136A
Other languages
English (en)
Korean (ko)
Other versions
KR840003536A (ko
Inventor
세쓰오 오구라
시스오 곤도
Original Assignee
가부시기가이샤 히다찌세이사꾸쇼
미쓰다 가쓰시게
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시기가이샤 히다찌세이사꾸쇼, 미쓰다 가쓰시게 filed Critical 가부시기가이샤 히다찌세이사꾸쇼
Publication of KR840003536A publication Critical patent/KR840003536A/ko
Application granted granted Critical
Publication of KR910002036B1 publication Critical patent/KR910002036B1/ko
Expired legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65Integrated injection logic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
KR1019830000136A 1982-01-25 1983-01-15 반도체 집적 회로 장치 Expired KR910002036B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP57008932A JPS58127363A (ja) 1982-01-25 1982-01-25 半導体集積回路装置
JP57-008932 1982-01-25
JP57-8932 1982-01-25

Publications (2)

Publication Number Publication Date
KR840003536A KR840003536A (ko) 1984-09-08
KR910002036B1 true KR910002036B1 (ko) 1991-03-30

Family

ID=11706432

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019830000136A Expired KR910002036B1 (ko) 1982-01-25 1983-01-15 반도체 집적 회로 장치

Country Status (9)

Country Link
JP (1) JPS58127363A (enrdf_load_html_response)
KR (1) KR910002036B1 (enrdf_load_html_response)
DE (1) DE3302206A1 (enrdf_load_html_response)
FR (1) FR2520555B1 (enrdf_load_html_response)
GB (2) GB2113915B (enrdf_load_html_response)
HK (2) HK71287A (enrdf_load_html_response)
IT (1) IT1160470B (enrdf_load_html_response)
MY (1) MY8700613A (enrdf_load_html_response)
SG (1) SG36587G (enrdf_load_html_response)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3926011B2 (ja) 1997-12-24 2007-06-06 株式会社ルネサステクノロジ 半導体装置の設計方法
JP4292668B2 (ja) * 2000-01-31 2009-07-08 富士ゼロックス株式会社 発光サイリスタアレイ

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3443176A (en) * 1966-03-31 1969-05-06 Ibm Low resistivity semiconductor underpass connector and fabrication method therefor
DE1949484B2 (de) * 1969-10-01 1978-02-23 Ibm Deutschland Gmbh, 7000 Stuttgart Leitungskreuzung fuer monolithisch integrierte halbleiterschaltungen und deren verwendung in einer speichermatrix
FR2244262B1 (enrdf_load_html_response) * 1973-09-13 1978-09-29 Radiotechnique Compelec
DE2514466B2 (de) * 1975-04-03 1977-04-21 Ibm Deutschland Gmbh, 7000 Stuttgart Integrierte halbleiterschaltung
JPS5264830A (en) * 1975-11-25 1977-05-28 Hitachi Ltd Power source supply system of integrated injection logical circuit
NL7700420A (nl) * 1977-01-17 1978-07-19 Philips Nv Halfgeleiderinrichting en werkwijze ter ver- vaardiging daarvan.
US4228450A (en) * 1977-10-25 1980-10-14 International Business Machines Corporation Buried high sheet resistance structure for high density integrated circuits with reach through contacts
DE3143565A1 (de) * 1981-11-03 1983-05-11 International Microcircuits Inc., 95051 Santa Clara, Calif. Integrierte schaltung

Also Published As

Publication number Publication date
GB8403188D0 (en) 1984-03-14
IT8319236A0 (it) 1983-01-21
FR2520555B1 (fr) 1987-02-20
JPS58127363A (ja) 1983-07-29
MY8700613A (en) 1987-12-31
HK70687A (en) 1987-10-09
GB2113915B (en) 1985-11-20
DE3302206A1 (de) 1983-08-04
GB2133622A (en) 1984-07-25
IT1160470B (it) 1987-03-11
JPH0334661B2 (enrdf_load_html_response) 1991-05-23
GB2133622B (en) 1985-11-20
GB8301731D0 (en) 1983-02-23
FR2520555A1 (fr) 1983-07-29
GB2113915A (en) 1983-08-10
KR840003536A (ko) 1984-09-08
SG36587G (en) 1987-07-24
HK71287A (en) 1987-10-09

Similar Documents

Publication Publication Date Title
US4412142A (en) Integrated circuit incorporating low voltage and high voltage semiconductor devices
KR20010015835A (ko) 반도체 장치
US4490629A (en) High voltage circuits in low voltage CMOS process
EP0596565B1 (en) Novel device configuration with multiple HV-LDMOS transistors and a floating well circuit
US5639680A (en) Method of making analog multiplexer cell for mixed digital and analog signal inputs
KR100334381B1 (ko) 유도성부하소자용집적드라이버회로
US4994884A (en) Gate-controlled bi-directional semiconductor switching device
KR940000519B1 (ko) 반도체 장치
EP0449093B1 (en) Circuital arrangement for preventing latch-up phenomena in vertical PNP transistors with insulated collector
US5051612A (en) Prevention of parasitic mechanisms in junction isolated devices
US4812891A (en) Bipolar lateral pass-transistor for CMOS circuits
KR910002036B1 (ko) 반도체 집적 회로 장치
US4475280A (en) Method of making an integrated circuit incorporating low voltage and high voltage semiconductor devices
EP0041363B1 (en) Schmitt trigger circuit with a hysteresis characteristic
US5515007A (en) Triple buffered amplifier output stage
KR100867572B1 (ko) 고전압 섬 영역 내에 바이폴라 트랜지스터가 내장된고전압 집적 회로
US4725745A (en) Bi-MOS PLA
EP0238671B1 (en) Semiconductor device
US5300805A (en) Epitaxial tub bias structure for integrated circuits
US4952998A (en) Integrated circuit with complementary MOS transistors
US4691221A (en) Monolithically integrated bipolar Darlington circuit
JPH0244805A (ja) 集積電流ミラー回路
US5204543A (en) Lateral type semiconductor device having a structure for eliminating turning-on of parasitic mos transistors formed therein
JP3048790B2 (ja) 半導体集積回路装置
GB2096828A (en) Integrated circuit connections

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

G160 Decision to publish patent application
PG1605 Publication of application before grant of patent

St.27 status event code: A-2-2-Q10-Q13-nap-PG1605

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 19950323

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 19960331

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 19960331

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000