KR910001392A - 초단파 전기 신호의 측정을 위한 전기 광학 장치 - Google Patents
초단파 전기 신호의 측정을 위한 전기 광학 장치 Download PDFInfo
- Publication number
- KR910001392A KR910001392A KR1019900009121A KR900009121A KR910001392A KR 910001392 A KR910001392 A KR 910001392A KR 1019900009121 A KR1019900009121 A KR 1019900009121A KR 900009121 A KR900009121 A KR 900009121A KR 910001392 A KR910001392 A KR 910001392A
- Authority
- KR
- South Korea
- Prior art keywords
- electro
- optical device
- quantum well
- well structure
- coplanar transmission
- Prior art date
Links
- 238000005259 measurement Methods 0.000 title 1
- 230000005540 biological transmission Effects 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims 4
- 239000004065 semiconductor Substances 0.000 claims 4
- 239000000463 material Substances 0.000 claims 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims 2
- 229910005542 GaSb Inorganic materials 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 238000001514 detection method Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 230000005684 electric field Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/07—Non contact-making probes
- G01R1/071—Non contact-making probes containing electro-optic elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/24—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using light-modulating devices
- G01R15/241—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using light-modulating devices using electro-optical modulators, e.g. electro-absorption
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/02—Measuring characteristics of individual pulses, e.g. deviation from pulse flatness, rise time or duration
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- General Engineering & Computer Science (AREA)
- Light Receiving Elements (AREA)
- Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
- Measurement Of Current Or Voltage (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 원리에 따른 전기 광학 장치의 실시예에 대한 단면도.
제2도는 두개의 상이한 레벨로 인가된 전기장에 대해 광자 에너지와 함께 전송의 변화를 나타내는 그래프,
제3도는 전기 광학 장치의 두번째 실시예의 단면도.
Claims (10)
- 전기 신호의 특성을 측정하는 전기 광학 장치에 있어서, 거의 반절연성인 반도체 물질을 포함하는 다중 양자웰 구조, 상기 다중 양자 웰 구조위에 설치된 제1및 제2공면 전송선, 상기 제1및 2공면 전송선 사이에 고정된 전기 퍼텐셜을 접촉시키기 위한 전극 수단, 상기 다중 양자 웰 구조를 거의 포함하는 상기 제1및 제2공면 전송선사이의 영역을 광학 비임으로 조명하기 위한 수단 및, 상기 공면 전송선 사이에 전기 전기 신호를 분사하기 위한 수단을 포함하며, 상기 다중 양자 웰 구조가, 상기 광학 비임의 특징을 변조시키기 위해 상기 전기 신호의 진폭 변화에 응답하는 전기 광학 장치.
- 제1항에 있어서, 상기 공면 전송선이 공면 스트립 라인을 포함하는 전기 광학 장치.
- 제1항에 있어서, 상기 공면 전송선이 공면 도파관을 포함하는 전기 광학 장치.
- 제1항에 있어서, 상기 변조된 광학 비임에 응답하는 검출 수단을 포함하는 전기 광학 장치.
- 제4항에 있어서, 상기 분사용 수단이 광전도 스위치를 포함하는 전기 광학 장치.
- 제4항에 있어서, 상기 전기 신호가 전자 장치에 의해 발생되는 전기 광학 장치.
- 제6항에 있어서, 상기 전자 장치 및 상기 다중 양자 웰 구조가 단일한 반도체 기판상에 공동으로 제조되는 전기 광학 장치.
- 제1항에 있어서, 다중 양자 웰 구조가 106Ω.㎝보다 큰 비저항을 가진 상기 반도체 물질을 포함하는 상기 전기 광학 장치.
- 제1항에 있어서, 상기 조명 수단이 상기 광학 비임을 발생시키기 위한 레이저를 포함하는 전기 광학 장치.
- 제1항에 있어서, 상기 다중 양자 웰 구조가 GaAs/GaAlAs, InGaAs/Inp, InGaAs/InAlAs 및 GaSb/AlGaSb 계에서 선택된 Ⅲ-Ⅴ족 화합물로 구성된 상기 반도체 물질을 포함하는 전기 광학 장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/371,475 US4978910A (en) | 1989-06-26 | 1989-06-26 | Electrooptic apparatus for the measurement of ultrashort electrical signals |
US371475 | 1999-08-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910001392A true KR910001392A (ko) | 1991-01-30 |
KR930011425B1 KR930011425B1 (ko) | 1993-12-06 |
Family
ID=23464138
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900009121A KR930011425B1 (ko) | 1989-06-26 | 1990-06-21 | 초단파전기신호의 측정을 위한 전기광학장치 |
Country Status (6)
Country | Link |
---|---|
US (1) | US4978910A (ko) |
EP (1) | EP0405802B1 (ko) |
JP (1) | JPH0337572A (ko) |
KR (1) | KR930011425B1 (ko) |
CA (1) | CA2014681C (ko) |
DE (1) | DE69022136T2 (ko) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4952527A (en) * | 1988-02-19 | 1990-08-28 | Massachusetts Institute Of Technology | Method of making buffer layers for III-V devices using solid phase epitaxy |
US5332918A (en) * | 1988-02-19 | 1994-07-26 | Massachusetts Institute Of Technology | Ultra-high-speed photoconductive devices using semi-insulating layers |
US5434698A (en) * | 1989-11-13 | 1995-07-18 | Dai Nippon Printing Co., Ltd. | Potential sensor employing electrooptic crystal and potential measuring method |
US5262660A (en) * | 1991-08-01 | 1993-11-16 | Trw Inc. | High power pseudomorphic gallium arsenide high electron mobility transistors |
US5635831A (en) * | 1991-12-11 | 1997-06-03 | Imatran Voima Oy | Optical voltage and electric field sensor based on the pockels effect |
US5406194A (en) * | 1992-09-21 | 1995-04-11 | At&T Corp. | Alx Ga1-x as probe for use in electro-optic sampling |
US5844288A (en) * | 1994-07-06 | 1998-12-01 | The Regents Of The University Of Michigan | Photoconductive element and method for measuring high frequency signals |
US5801375A (en) * | 1995-05-23 | 1998-09-01 | Advantest Corporation | Sampler module, sampling waveform measurement device using the sample module, and sampling waveform measurement method |
US5747791A (en) * | 1996-04-25 | 1998-05-05 | Coroy; Trenton G. | Method and devices for wavelength and power demodulation based on the use of a quantum well electroabsorption filtering detector |
US6198580B1 (en) | 1998-08-17 | 2001-03-06 | Newport Corporation | Gimballed optical mount |
US6516130B1 (en) | 1998-12-30 | 2003-02-04 | Newport Corporation | Clip that aligns a fiber optic cable with a laser diode within a fiber optic module |
FR2790115B1 (fr) | 1999-02-23 | 2001-05-04 | Micro Controle | Procede et dispositif pour deplacer un mobile sur une base montee elastiquement par rapport au sol |
US6996506B2 (en) | 1999-02-23 | 2006-02-07 | Newport Corporation | Process and device for displacing a moveable unit on a base |
FR2791474B1 (fr) * | 1999-03-26 | 2001-06-08 | Centre Nat Rech Scient | Detecteur infrarouge semi-conducteur et son procede de fabrication |
US6511035B1 (en) | 1999-08-03 | 2003-01-28 | Newport Corporation | Active vibration isolation systems with nonlinear compensation to account for actuator saturation |
US6400165B1 (en) * | 2000-02-02 | 2002-06-04 | Lucent Technologies Inc. | Ultra-fast probe |
US6655840B2 (en) | 2001-02-13 | 2003-12-02 | Newport Corporation | Stiff cross roller bearing configuration |
US6601524B2 (en) | 2001-03-28 | 2003-08-05 | Newport Corporation | Translation table with a spring biased dovetail bearing |
US6791058B2 (en) | 2001-04-25 | 2004-09-14 | Newport Corporation | Automatic laser weld machine for assembling photonic components |
US6568666B2 (en) | 2001-06-13 | 2003-05-27 | Newport Corporation | Method for providing high vertical damping to pneumatic isolators during large amplitude disturbances of isolated payload |
US6619611B2 (en) | 2001-07-02 | 2003-09-16 | Newport Corporation | Pneumatic vibration isolator utilizing an elastomeric element for isolation and attenuation of horizontal vibration |
JP2003057118A (ja) * | 2001-07-24 | 2003-02-26 | Agilent Technol Inc | 高周波光信号測定装置 |
US6966535B2 (en) | 2002-05-07 | 2005-11-22 | Newport Corporation | Snubber for pneumatically isolated platforms |
US8231098B2 (en) | 2004-12-07 | 2012-07-31 | Newport Corporation | Methods and devices for active vibration damping of an optical structure |
US7929580B2 (en) * | 2006-09-22 | 2011-04-19 | Alcatel-Lucent Usa Inc. | Inexpensive terahertz pulse wave generator |
CN104297605B (zh) * | 2014-10-30 | 2017-04-19 | 云南省送变电工程公司 | 超高压带电作业绝缘安全工器具试验系统及其试验方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4482863A (en) * | 1981-08-14 | 1984-11-13 | At&T Bell Laboratories | Apparatus and method for measuring electronic response of high speed devices and materials |
US4446425A (en) * | 1982-02-12 | 1984-05-01 | The University Of Rochester | Measurement of electrical signals with picosecond resolution |
US4525687A (en) * | 1983-02-28 | 1985-06-25 | At&T Bell Laboratories | High speed light modulator using multiple quantum well structures |
US4716449A (en) * | 1984-03-14 | 1987-12-29 | American Telephone And Telegraph Company At&T Bell Laboratories | Nonlinear and bistable optical device |
US4618819A (en) * | 1984-03-27 | 1986-10-21 | The University Of Rochester | Measurement of electrical signals with subpicosecond resolution |
US4603293A (en) * | 1984-03-27 | 1986-07-29 | University Of Rochester | Measurement of electrical signals with subpicosecond resolution |
US4806997A (en) * | 1985-06-14 | 1989-02-21 | AT&T Laboratories American Telephone and Telegraph Company | Double heterostructure optoelectronic switch |
-
1989
- 1989-06-26 US US07/371,475 patent/US4978910A/en not_active Expired - Lifetime
-
1990
- 1990-04-17 CA CA002014681A patent/CA2014681C/en not_active Expired - Fee Related
- 1990-06-12 JP JP2151802A patent/JPH0337572A/ja active Pending
- 1990-06-15 DE DE69022136T patent/DE69022136T2/de not_active Expired - Fee Related
- 1990-06-15 EP EP90306550A patent/EP0405802B1/en not_active Expired - Lifetime
- 1990-06-21 KR KR1019900009121A patent/KR930011425B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CA2014681C (en) | 1994-10-18 |
EP0405802A3 (en) | 1992-04-15 |
EP0405802B1 (en) | 1995-09-06 |
KR930011425B1 (ko) | 1993-12-06 |
DE69022136D1 (de) | 1995-10-12 |
CA2014681A1 (en) | 1990-12-26 |
US4978910A (en) | 1990-12-18 |
EP0405802A2 (en) | 1991-01-02 |
JPH0337572A (ja) | 1991-02-18 |
DE69022136T2 (de) | 1997-02-20 |
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