KR900019233A - 주변회로에서의 접촉 홀의 형상 및 종횡비를 개선하기 위해 셀 트랜지스터위에 형성되는 콘덴서를 구비하는 메모리 셀과 그 주변 회로로 구성되는 다이내믹 랜덤 액세스 메모리장치와 그 제조방법 - Google Patents
주변회로에서의 접촉 홀의 형상 및 종횡비를 개선하기 위해 셀 트랜지스터위에 형성되는 콘덴서를 구비하는 메모리 셀과 그 주변 회로로 구성되는 다이내믹 랜덤 액세스 메모리장치와 그 제조방법Info
- Publication number
- KR900019233A KR900019233A KR1019900006624A KR900006624A KR900019233A KR 900019233 A KR900019233 A KR 900019233A KR 1019900006624 A KR1019900006624 A KR 1019900006624A KR 900006624 A KR900006624 A KR 900006624A KR 900019233 A KR900019233 A KR 900019233A
- Authority
- KR
- South Korea
- Prior art keywords
- peripheral circuit
- manufacturing
- random access
- improve
- contact hole
- Prior art date
Links
- 230000002093 peripheral effect Effects 0.000 title 2
- 239000003990 capacitor Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
- H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1-116402 | 1989-05-10 | ||
JP1116402A JPH0824169B2 (ja) | 1989-05-10 | 1989-05-10 | 半導体記憶装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR900019233A true KR900019233A (ko) | 1990-12-24 |
KR940000307B1 KR940000307B1 (ko) | 1994-01-14 |
Family
ID=14686160
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900006624A KR940000307B1 (ko) | 1989-05-10 | 1990-05-10 | 주변회로에서의 접촉 홀의 형상 및 종횡비를 개선하기 위해 셀 트랜지스터위에 형성되는 콘덴서를 구비하는 메모리 셀과 그 주변 회로로 구성되는 다이내믹 랜덤 액세스 메모리장치와 그 제조방법 |
Country Status (5)
Country | Link |
---|---|
US (2) | US5637522A (ko) |
EP (1) | EP0398569B1 (ko) |
JP (1) | JPH0824169B2 (ko) |
KR (1) | KR940000307B1 (ko) |
DE (1) | DE69031243T2 (ko) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2818964B2 (ja) * | 1990-03-30 | 1998-10-30 | 三菱電機株式会社 | 積層構造の電荷蓄積部を有する半導体記憶装置の製造方法 |
DE4143485C2 (de) * | 1990-03-30 | 1995-09-28 | Mitsubishi Electric Corp | Zusammengesetzte Kondensatorstruktur |
KR100249268B1 (ko) * | 1990-11-30 | 2000-03-15 | 가나이 쓰도무 | 반도체 기억회로장치와 그 제조방법 |
KR920017248A (ko) * | 1991-02-18 | 1992-09-26 | 문정환 | 반도체 메모리 소자의 커패시터 제조방법 |
US5270243A (en) * | 1993-03-22 | 1993-12-14 | Industrial Technology Research Institute | Dram peripheral circuit contact aspect ratio improvement process |
KR0140644B1 (ko) * | 1994-01-12 | 1998-06-01 | 문정환 | 반도체 메모리장치 및 그 제조방법 |
JP3146962B2 (ja) * | 1995-12-14 | 2001-03-19 | 日本電気株式会社 | 半導体記憶装置およびその製造方法 |
FR2752336B1 (fr) * | 1996-08-09 | 1999-05-14 | Sgs Thomson Microelectronics | Condensateur dans un circuit integre |
JPH10242419A (ja) * | 1997-02-27 | 1998-09-11 | Mitsubishi Electric Corp | 半導体装置の製造方法及び半導体装置 |
FR2784799B1 (fr) * | 1998-10-14 | 2003-10-03 | St Microelectronics Sa | Cellule memoire |
JP3957945B2 (ja) | 2000-03-31 | 2007-08-15 | 富士通株式会社 | 半導体装置及びその製造方法 |
FR2816110B1 (fr) * | 2000-10-27 | 2003-03-21 | St Microelectronics Sa | Lignes de bit en memoire dram |
KR100526889B1 (ko) * | 2004-02-10 | 2005-11-09 | 삼성전자주식회사 | 핀 트랜지스터 구조 |
KR100647775B1 (ko) * | 2004-12-01 | 2006-11-23 | 엘지.필립스 엘시디 주식회사 | 박막 트랜지스터 기판 및 제조 방법 |
KR100693812B1 (ko) * | 2006-02-11 | 2007-03-12 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법, 반도체 장치의 센스 앰프 및그 형성 방법 |
KR101110543B1 (ko) * | 2010-04-21 | 2012-02-09 | 주식회사 하이닉스반도체 | 고집적 반도체 장치 |
US8431995B2 (en) * | 2010-05-13 | 2013-04-30 | International Business Machines Corporation | Methodology for fabricating isotropically recessed drain regions of CMOS transistors |
US8716798B2 (en) | 2010-05-13 | 2014-05-06 | International Business Machines Corporation | Methodology for fabricating isotropically recessed source and drain regions of CMOS transistors |
US9443872B2 (en) * | 2014-03-07 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5681968A (en) * | 1979-12-07 | 1981-07-04 | Toshiba Corp | Manufacture of semiconductor device |
JPS59231851A (ja) * | 1983-06-14 | 1984-12-26 | Nippon Telegr & Teleph Corp <Ntt> | 半導体メモリセル |
JPS61125152A (ja) * | 1984-11-22 | 1986-06-12 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS61183952A (ja) * | 1985-02-09 | 1986-08-16 | Fujitsu Ltd | 半導体記憶装置及びその製造方法 |
US4793975A (en) * | 1985-05-20 | 1988-12-27 | Tegal Corporation | Plasma Reactor with removable insert |
JPH0712058B2 (ja) * | 1985-06-27 | 1995-02-08 | 株式会社東芝 | 半導体装置およびその製造方法 |
EP0224213A3 (en) * | 1985-11-22 | 1987-10-28 | Nec Corporation | Semiconductor memory device |
JPH0736437B2 (ja) * | 1985-11-29 | 1995-04-19 | 株式会社日立製作所 | 半導体メモリの製造方法 |
JPH0815207B2 (ja) * | 1986-02-04 | 1996-02-14 | 富士通株式会社 | 半導体記憶装置 |
JPH0789569B2 (ja) * | 1986-03-26 | 1995-09-27 | 株式会社日立製作所 | 半導体集積回路装置及びその製造方法 |
JPS62259464A (ja) * | 1986-05-02 | 1987-11-11 | Toshiba Corp | 半導体記憶装置の製造方法 |
JPS63237439A (ja) * | 1987-03-26 | 1988-10-03 | Fujitsu Ltd | 半導体装置 |
JPS63299166A (ja) * | 1987-05-29 | 1988-12-06 | Fujitsu Ltd | 半導体装置 |
JP2615076B2 (ja) * | 1987-09-19 | 1997-05-28 | 株式会社日立製作所 | 半導体集積回路装置の製造方法 |
KR910009805B1 (ko) * | 1987-11-25 | 1991-11-30 | 후지쓰 가부시끼가이샤 | 다이나믹 랜덤 액세스 메모리 장치와 그의 제조방법 |
DE3802903A1 (de) * | 1988-02-01 | 1989-08-10 | Siemens Ag | Einrichtung zur uebertragung von sprache |
JP2631713B2 (ja) * | 1988-08-25 | 1997-07-16 | 富士通株式会社 | 半導体装置の製造方法 |
-
1989
- 1989-05-10 JP JP1116402A patent/JPH0824169B2/ja not_active Expired - Fee Related
-
1990
- 1990-05-08 EP EP90304917A patent/EP0398569B1/en not_active Expired - Lifetime
- 1990-05-08 DE DE69031243T patent/DE69031243T2/de not_active Expired - Fee Related
- 1990-05-10 KR KR1019900006624A patent/KR940000307B1/ko not_active IP Right Cessation
-
1995
- 1995-05-10 US US08/438,917 patent/US5637522A/en not_active Expired - Lifetime
-
1996
- 1996-10-21 US US08/734,129 patent/US5693970A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0398569A2 (en) | 1990-11-22 |
US5693970A (en) | 1997-12-02 |
US5637522A (en) | 1997-06-10 |
DE69031243T2 (de) | 1997-12-04 |
KR940000307B1 (ko) | 1994-01-14 |
DE69031243D1 (de) | 1997-09-18 |
JPH02295163A (ja) | 1990-12-06 |
JPH0824169B2 (ja) | 1996-03-06 |
EP0398569B1 (en) | 1997-08-13 |
EP0398569A3 (en) | 1991-09-11 |
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G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
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FPAY | Annual fee payment |
Payment date: 20070110 Year of fee payment: 14 |
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LAPS | Lapse due to unpaid annual fee |