KR900002085B1 - 미세패턴 형성방법 - Google Patents

미세패턴 형성방법 Download PDF

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Publication number
KR900002085B1
KR900002085B1 KR1019860008630A KR860008630A KR900002085B1 KR 900002085 B1 KR900002085 B1 KR 900002085B1 KR 1019860008630 A KR1019860008630 A KR 1019860008630A KR 860008630 A KR860008630 A KR 860008630A KR 900002085 B1 KR900002085 B1 KR 900002085B1
Authority
KR
South Korea
Prior art keywords
etching
pattern
predetermined
mask
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019860008630A
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English (en)
Korean (ko)
Other versions
KR870004495A (ko
Inventor
이사히로 하세가와
Original Assignee
가부시키가이샤 도시바
와타리 스기이치로
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 도시바, 와타리 스기이치로 filed Critical 가부시키가이샤 도시바
Publication of KR870004495A publication Critical patent/KR870004495A/ko
Application granted granted Critical
Publication of KR900002085B1 publication Critical patent/KR900002085B1/ko
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/694—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by their behaviour during the process, e.g. soluble masks or redeposited masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/063—Manufacture or treatment of conductive parts of the interconnections by forming conductive members before forming protective insulating material

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  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1019860008630A 1985-10-16 1986-10-15 미세패턴 형성방법 Expired KR900002085B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60230356A JPS6289331A (ja) 1985-10-16 1985-10-16 微細パタ−ンの加工方法
JP60-230356 1985-10-16

Publications (2)

Publication Number Publication Date
KR870004495A KR870004495A (ko) 1987-05-09
KR900002085B1 true KR900002085B1 (ko) 1990-03-31

Family

ID=16906577

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860008630A Expired KR900002085B1 (ko) 1985-10-16 1986-10-15 미세패턴 형성방법

Country Status (3)

Country Link
EP (1) EP0219100A3 (https=)
JP (1) JPS6289331A (https=)
KR (1) KR900002085B1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8701032A (nl) * 1987-05-01 1988-12-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting met interconnecties die zowel boven een halfgeleidergebied als boven een daaraan grenzend isolatiegebied liggen.
FR2634322A1 (fr) * 1988-07-13 1990-01-19 Thomson Csf Module semi-conducteur actif hybride obtenu par reconfiguration physique de pastilles, interconnectees par films minces, et procede de fabrication correspondant
JPH0830370B2 (ja) * 1990-08-15 1996-03-27 鹿島建設株式会社 耐震壁の構築方法
JP2658609B2 (ja) * 1991-03-01 1997-09-30 日本電気株式会社 半導体装置
FR2681958A1 (fr) * 1991-10-01 1993-04-02 France Telecom Dispositif comportant un modele configure par photogravure, notamment circuit electrique.
JPH07106327A (ja) * 1993-10-06 1995-04-21 Toshiba Corp 半導体装置及びその製造方法
US5589706A (en) * 1995-05-31 1996-12-31 International Business Machines Corp. Fuse link structures through the addition of dummy structures
JP4572096B2 (ja) * 2004-08-02 2010-10-27 Ｎｅｃ液晶テクノロジー株式会社 積層金属膜パターン形成方法
JP2013201168A (ja) * 2012-03-23 2013-10-03 Toshiba Corp 被ダイシング材料、レジスト層形成装置
JP2015046459A (ja) * 2013-08-28 2015-03-12 ソニー株式会社 エッチング方法、電子デバイスの製造方法および偏光板の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5713180A (en) * 1980-06-25 1982-01-23 Fujitsu Ltd Etching method
US4372807A (en) * 1982-03-25 1983-02-08 Rca Corporation Plasma etching of aluminum
JPS59115541A (ja) * 1982-12-22 1984-07-04 Toshiba Corp 半導体装置の製造方法
EP0229104A1 (en) * 1985-06-28 1987-07-22 AT&T Corp. Procedure for fabricating devices involving dry etching

Also Published As

Publication number Publication date
JPH0471334B2 (https=) 1992-11-13
JPS6289331A (ja) 1987-04-23
EP0219100A2 (en) 1987-04-22
EP0219100A3 (en) 1988-06-22
KR870004495A (ko) 1987-05-09

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