KR890003623A - 미세결정질 베마이트 및 요업체류의 제조 - Google Patents

미세결정질 베마이트 및 요업체류의 제조 Download PDF

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KR890003623A
KR890003623A KR1019880010204A KR880010204A KR890003623A KR 890003623 A KR890003623 A KR 890003623A KR 1019880010204 A KR1019880010204 A KR 1019880010204A KR 880010204 A KR880010204 A KR 880010204A KR 890003623 A KR890003623 A KR 890003623A
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boehmite
precursor
microcrystalline
alumina
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바우어 랠프
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원본미기재
노튼 캄파니
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    • C01F7/00—Compounds of aluminium
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    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
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    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
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Abstract

내용 없음

Description

미세결정질 베마이트 및 요업체류의 제조
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (28)

  1. Al2O3로서 계산된, 전구체 알루미나의 7.5중량%이상의 양만큼 존재하는 0.02미크론보다 더 미세한 베마이트 시이드 입자의 존재하에 5이하 혹은 8이상의 pH를 갖는 수성 배지에서 베마이트 알루미나 전구체를 자생 압력하, 130℃이상에서 본질적으로 상기 전구체를 미세결정질 베마이트로 전환하기에 충분한 시간 동안 가열하는 것을 포함하는 미세결정질 베마이트 생성물을 만드는 방법.
  2. 제 1 항에 있어서, 베마이트 전구체를 미세결정질 베마이트로 전환시키는 동안 적어도 0.1중량%의 알파 알루미나 시이드가 상기수성 배지 내에 있는 방법.
  3. 제 1 항에 있어서, 상기 베마이트 시이드 입자가 Al2O3로서 계산된, 전구체 알루미나의 적어도 15중량%의 양만큼 존재하는 방법.
  4. 제 1 항 내지 제 3 항중 어느 한 항에 있어서, 상기 배지가 적어도 120℃의 온도로 가열된 후에 상기 베마이트 시이드 입자가 상기 수성 배지에 첨가되는 방법.
  5. 제 1 항 내지 제 3 항중 어느 한 항에 있어서, 상기 베마이트 시이드 입자가 100Å보다 더 미세한 방법.
  6. 제 5항에 있어서, 상기 베마이트 시이드 입자가 50Å보다 더 미세한 방법.
  7. 제 1 항 내지 제 3 항중 어느 한 항에 있어서, 미세결정질 베마이트로 상기 전구체를 전환하기에 앞서 상기 수성 배지에 결정체 성장 억제제를 첨가하는 것을 포함하는 방법.
  8. 제 7항에 있어서, 상기 결정체 성장 억제제가 산화마그네슘 혹은 산화마그네슘 전구체인 방법.
  9. 제 1 항 내지 제 3 항중 어느 한 항에 있어서, 미세결정질 베마이트로 상기 전구체를 전환하기에 앞서 상기 수성 배지에 지르크니아 혹은 산화 지르코늄 전구체를 첨가하는 것을 포함하는 방법.
  10. 제 1 항 내지 제 3 항중 어느 한 항에 있어서, 미세결정질 베마이트로 상기 전구체를 전환하기에 앞서 수화된 베마이트 표면을 갖는 서브미크론 알파 알루미나 시이드 입자를 상기 수용액 배지에 제공하는 것을 포함하는 방법.
  11. 제 1 항 내지 제 3 항중 어느 한항에 있어서, 수성 배지로부터 알카리 및 알카리 토류 이온을 제거하는 것을 포함하는 방법.
  12. 제11항에 있어서, 알카리 및 알카리 토류 이온의 제거가 상기 수성 배지와 이온 교환 배를 접촉시키는 것을 포함하는 방법.
  13. 제 1항 내지 제 3 항중 어느 한 항에 있어서, pH가 5이하인 방법.
  14. 상기 전구체 다분량을 미세결정질 베마이트로 전환시키기에 충분한 시간 동안 베마이트가 안정상인 조건으로 유지되는 pH, 압력, 온도에서 0.02미크론 이하의 결정체 크기를 갖는 베마이트 시이드 물질 및 물의 존재하에 수화된 알루미나 베마이트 전구체를 반응시키는 것을 포함하는 미세결정질 베마이트를 생산하는 방법.
  15. 1) 삼수화물로서 계산된 알루미나 전구체 고형물을 기준으로, 5중량%이상의 0.02미크론보다 더 미세한 입자크기를 갖는 베마이트 시이드 물질 및 베마이트의 산화 알루미늄 전구체를 함유하는 수성 배지를 제공하고, 2) 상기 전구체를 베마이트로 전환하기 위해 적어도 자생 압력하에서 상기 배지를 가열하고, 3) 상기 배지와 이온 교환 배지를 접촉시킴으로서 상기 수성 배지로부터 금속 양이온은 제거하는 것을 포함하는, 미세결정질 베마이트를 생산하는 방법.
  16. 제15항에 잇어서, 전구체를 베마이트로 완전히 전환하기 전에 배지에, Al2O3로서 계산된 전체 알루미나가, 적어도 0.1중량%의 양으로 서브미크론 알파 알루미나 성핵물질을 첨가하는 것을 포함하는 방법.
  17. 제15항에 있어서, 상기 수성 배지를 적어도 120°로 가열한 후에 상기 베마이트 시이드 물질을 수성배지에 첨가하는 방법.
  18. 제1-3항 및 제14-17항중 어느 한 항에 있어서, 연마제 그리트를 생성하기 위해, 베마이트 제품을 소성시키는 것을 포함하는 방법.
  19. 제1-3항 및 제14-17항중 어느 한 항에 있어서, 베마이트 생성물을 성형하고, 무수 알루미나 제품을 생산하기 위해 성형된 생성물을 소성처리하는 것을 포함하는 방법.
  20. 제19항에 있어서, 베마이트를 마그네슘 산화물, 지르코니아 산화물, 세라믹 혹은 금속 섬유 혹은 그들의 혼합물과의 혼합물로 소성시키는 방법.
  21. 상기 전구체 다분량을 미세결정질 베마이트로 전환하기에 충분한 시간동안 베마이트가 안정상인 조건으로 압력 및 온도을 유지하면서, 소성시 알파 알루미나의 형성을 촉진시키기에 효과적인 양만큼, 효과적인 유형의 서브미크론 시이드 물질, 0.02미크론 미만의 결정체 크기를 갖는 베마이트 시이드 물질, 산성화된 물의 존재하에 수화된 알루미나 베마이트 전구체를 반응시키고 ; 상기 베마이트를 알파 알루미나로 전환하기에 충분한 온도에서 상기 미세결정질 베마이트를 소성시키는 것을 포함하는, 알파 알루미나를체를 생산하는 방법.
  22. 제21항에 잇어서, 소성에 앞서 상기 미세결정질 베마이트를 성형하는 것을 포함하는 방법.
  23. 제21항에 있어서, 알파 알루미나를 형성하기에 충분한 온도에서 소성하기에 앞서 상기 미세결정질 베마이트를 건조시키고 분쇄하는 것을 포함하는 방법.
  24. 제21항 내지 제23항중 어느 한 항에 있어서, 상기 산성화된 물이 5이하의 pH를 갖는 방법.
  25. 제21항 내지 제23항중 어느 한 항에 있어서, 소성에 앞서 알카리 및 알카리 토류 이온을 제거하는 방법.
  26. 상기 전구체 다분량을 미세결정질 베마이트로 전화하기에 충분한 시간동안 베마이트가 안정상인 조건으로 압력 및 온도를 유지하면서 0.02미크론 미만의 결정체 크기를 갖는 베마이트 시이드 물질 및 산성화된 물의 존재하에 수화된 알루미나 베마이트 전구체를 반응시키고, 상기 베마이트를 감아 알루미나로 전환하기에 효과적인 온도 및 시간동안 상기 미세결정질 베마이트를 소성시키는 것을 포함하는, 감마 알루미나체를 생산하는 방법.
  27. 제26항에 있어서, 소성에 앞서 상기 베마이트를 성형하는 것을 포함하는 방법.
  28. 제26항 또느 제27항에 있어서, 소성에 앞서 알카리 및 알카리 토류 이온을 제거하는 단계를 포함하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880010204A 1987-08-11 1988-08-10 미세결정질 베마이트 및 요업체류의 제조 KR960002622B1 (ko)

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US8454987A 1987-08-11 1987-08-11
JP084,549 1987-08-11
US084,549 1987-08-11
US133584 1987-12-16
US07/133,584 US4797139A (en) 1987-08-11 1987-12-16 Boehmite produced by a seeded hydyothermal process and ceramic bodies produced therefrom
JP133,584 1987-12-16

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KR960002622B1 KR960002622B1 (ko) 1996-02-24

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