KR880002821A - O-나프토퀴논디아지드 설폰산 에스테르를 제조하는 방법 및 이들을 함유하는 감광성 혼합물 - Google Patents

O-나프토퀴논디아지드 설폰산 에스테르를 제조하는 방법 및 이들을 함유하는 감광성 혼합물 Download PDF

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KR880002821A
KR880002821A KR870009311A KR870009311A KR880002821A KR 880002821 A KR880002821 A KR 880002821A KR 870009311 A KR870009311 A KR 870009311A KR 870009311 A KR870009311 A KR 870009311A KR 880002821 A KR880002821 A KR 880002821A
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South Korea
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carried out
esterification reaction
sulfonic acid
range
mixture containing
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KR870009311A
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KR950005773B1 (ko
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에드만 프리쯔
탐 홀스트-디이터
요아킴 스타우트 한스
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베틀라우퍼, 오일러
훽스트 아크티엔게젤샤프트
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Publication of KR880002821A publication Critical patent/KR880002821A/ko
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    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/63Esters of sulfonic acids
    • C07C309/72Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C303/00Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides
    • C07C303/26Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides of esters of sulfonic acids
    • C07C303/28Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides of esters of sulfonic acids by reaction of hydroxy compounds with sulfonic acids or derivatives thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Abstract

내용 없음

Description

O-나프토퀴논디아지드 설폰산 에스테르를 제조하는 방법 및 이들을 함유하는 감광성 혼합물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (7)

  1. O-나프토퀴논디아지드 설폰산 할라이드를 염기성 성분의 존재하에 용매중에서 일가-또는 다가 페놀 화합물을 사용하여 에스테르화 시킨 다음, 에스테르를 침전시키고 건조시켜O-나프토퀴논디아지드 설폰산 에스테르를 제조하는 방법에 있어서, 에스테르화 반응을 약 1.5 내지 약 8.5 범위내의 pH 및 약 15℃ 내지 약 40℃ 범위내의 온도에서 암모니아, 약산의 암모늄염 또는 탄소수 1 내지 3의 암모니아의 지방족 유도체의 존재하에 수행하는 방법.
  2. 제1항에 있어서, 에스테프화 반응을 수성 암모니아의 존재하에 수행하는 방법.
  3. 제1항에 있어서, 에스테르화 반응을 카본산 또는 아세트산의 암모늄염의 존재하에 수행하는 방법.
  4. 제1항에 있어서, 에스테르화 반응을 모노 에탄올아민 또는 디에탄올아민의 존재하에 수행하는 방법.
  5. 제1항 내지 제4항중 어느 한 항에 있어서, 에스테르화 반응을 약 6 내지 약 8의 pH 범위내에서 수행하는 방법.
  6. 제1항 내지 제5항 중 어느 한 항에 있어서, 에스테르화 반응을 약 20℃ 내지 약 35℃의 온도 범위내에서 수행하는 방법.
  7. 수불용성이며 알칼리 수용액에 가용성인 결합제, 및 제1항 내지 제6항중 어느 한 항에 따라O-나프토퀴논디아지드 설포닐 할라이드 및 일가-또는 다가 페놀 화합물로부터 수득한 에스테르를 함유하는 감광성 혼합물.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870009311A 1986-08-27 1987-08-26 O-나프토퀴논디아지드 설폰산 에스테르를 제조하는 방법 및 이들을 함유하는 감광성 혼합물 KR950005773B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19863629122 DE3629122A1 (de) 1986-08-27 1986-08-27 Verfahren zur herstellung eines o-naphthochinondiazidsulfonsaeureesters und diesen enthaltendes lichtempfindliches gemisch
DEP3629122.6 1986-08-27

Publications (2)

Publication Number Publication Date
KR880002821A true KR880002821A (ko) 1988-05-11
KR950005773B1 KR950005773B1 (ko) 1995-05-30

Family

ID=6308285

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870009311A KR950005773B1 (ko) 1986-08-27 1987-08-26 O-나프토퀴논디아지드 설폰산 에스테르를 제조하는 방법 및 이들을 함유하는 감광성 혼합물

Country Status (5)

Country Link
US (1) US4873169A (ko)
EP (1) EP0258727B1 (ko)
JP (1) JPH0710826B2 (ko)
KR (1) KR950005773B1 (ko)
DE (2) DE3629122A1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160003418U (ko) 2015-03-26 2016-10-06 이정훈 입자 비료 주입기의 주입구 구조

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5290656A (en) * 1988-05-07 1994-03-01 Sumitomo Chemical Company, Limited Resist composition, novel phenol compound and quinone diazide sulfonic acid ester of novel phenol compound
US5169741A (en) * 1988-10-11 1992-12-08 Matsushita Electric Industrial Co., Ltd. Method for forming high sensitivity positive patterns employing a material containing a photosensitive compound having a diazo group, an alkaline-soluble polymer, a compound capable of adjusting the pH to 4 or less and a solvent
DE3837499A1 (de) * 1988-11-04 1990-05-23 Hoechst Ag Verfahren zur herstellung von substituierten 1,2-naphthochinon-(2)-diazid-4-sulfonsaeureestern und deren verwendung in einem strahlungsempfindlichen gemisch
US5362599A (en) * 1991-11-14 1994-11-08 International Business Machines Corporations Fast diazoquinone positive resists comprising mixed esters of 4-sulfonate and 5-sulfonate compounds
JP4895329B2 (ja) * 2007-01-12 2012-03-14 日本精工株式会社 ボールねじ機構

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE506677A (ko) * 1950-10-31
NL129162C (ko) * 1959-01-17
GB1113759A (en) * 1965-12-17 1968-05-15 Fuji Photo Film Co Ltd Lithographic printing plates
US3647443A (en) * 1969-09-12 1972-03-07 Eastman Kodak Co Light-sensitive quinone diazide polymers and polymer compositions
JPS505084B1 (ko) * 1970-09-16 1975-02-28
JPS5280022A (en) * 1975-12-26 1977-07-05 Fuji Photo Film Co Ltd Light solubilizable composition
DE2828037A1 (de) * 1978-06-26 1980-01-10 Hoechst Ag Lichtempfindliches gemisch
DE2847878A1 (de) * 1978-11-04 1980-05-22 Hoechst Ag Lichtempfindliches gemisch
DE3100077A1 (de) * 1981-01-03 1982-08-05 Hoechst Ag, 6000 Frankfurt Lichtempfindliches gemisch, das einen naphthochinondiazidsulfonsaeureester enthaelt, und verfahren zur herstellung des naphthochinondiazidsulfonsaeureesters
US4397937A (en) * 1982-02-10 1983-08-09 International Business Machines Corporation Positive resist compositions
JPS59219743A (ja) * 1983-05-28 1984-12-11 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト現像液
GB8505402D0 (en) * 1985-03-02 1985-04-03 Ciba Geigy Ag Modified phenolic resins

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160003418U (ko) 2015-03-26 2016-10-06 이정훈 입자 비료 주입기의 주입구 구조

Also Published As

Publication number Publication date
JPS6368555A (ja) 1988-03-28
EP0258727A1 (de) 1988-03-09
KR950005773B1 (ko) 1995-05-30
US4873169A (en) 1989-10-10
DE3629122A1 (de) 1988-03-10
DE3765370D1 (de) 1990-11-08
JPH0710826B2 (ja) 1995-02-08
EP0258727B1 (de) 1990-10-03

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