KR20250116072A - 반도체 장치 - Google Patents

반도체 장치

Info

Publication number
KR20250116072A
KR20250116072A KR1020257021302A KR20257021302A KR20250116072A KR 20250116072 A KR20250116072 A KR 20250116072A KR 1020257021302 A KR1020257021302 A KR 1020257021302A KR 20257021302 A KR20257021302 A KR 20257021302A KR 20250116072 A KR20250116072 A KR 20250116072A
Authority
KR
South Korea
Prior art keywords
insulator
conductor
oxide
oxide semiconductor
addition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257021302A
Other languages
English (en)
Korean (ko)
Inventor
슌페이 야마자키
šœ페이 야마자키
타카노리 마츠자키
요시아키 오이카와
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20250116072A publication Critical patent/KR20250116072A/ko
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0318—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] of vertical TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6736—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes characterised by the shape of gate insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/33—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor extending under the transistor

Landscapes

  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
KR1020257021302A 2022-12-01 2023-11-24 반도체 장치 Pending KR20250116072A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2022-192676 2022-12-01
JP2022192676 2022-12-01
JP2022192655 2022-12-01
JPJP-P-2022-192655 2022-12-01
PCT/IB2023/061857 WO2024116037A1 (ja) 2022-12-01 2023-11-24 半導体装置

Publications (1)

Publication Number Publication Date
KR20250116072A true KR20250116072A (ko) 2025-07-31

Family

ID=91323067

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257021302A Pending KR20250116072A (ko) 2022-12-01 2023-11-24 반도체 장치

Country Status (5)

Country Link
US (1) US20260075875A1 (https=)
JP (1) JPWO2024116037A1 (https=)
KR (1) KR20250116072A (https=)
CN (1) CN120266595A (https=)
WO (1) WO2024116037A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026047504A1 (ja) * 2024-08-30 2026-03-05 株式会社半導体エネルギー研究所 半導体装置、半導体装置の作製方法
WO2026058122A1 (ja) * 2024-09-13 2026-03-19 株式会社半導体エネルギー研究所 半導体装置
WO2026058125A1 (ja) * 2024-09-13 2026-03-19 株式会社半導体エネルギー研究所 半導体装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011151383A (ja) 2009-12-25 2011-08-04 Semiconductor Energy Lab Co Ltd 半導体装置
JP2012257187A (ja) 2010-08-06 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体集積回路
JP2013211537A (ja) 2012-02-29 2013-10-10 Semiconductor Energy Lab Co Ltd 半導体装置
WO2021053473A1 (ja) 2019-09-20 2021-03-25 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5716445B2 (ja) * 2011-02-21 2015-05-13 富士通株式会社 縦型電界効果トランジスタとその製造方法及び電子機器
JP5708031B2 (ja) * 2011-02-25 2015-04-30 富士通株式会社 縦型電界効果トランジスタとその製造方法及び電子機器
WO2012121265A1 (en) * 2011-03-10 2012-09-13 Semiconductor Energy Laboratory Co., Ltd. Memory device and method for manufacturing the same
JP2017168761A (ja) * 2016-03-18 2017-09-21 株式会社ジャパンディスプレイ 半導体装置
KR102864089B1 (ko) * 2020-11-11 2025-09-23 삼성전자주식회사 전계 효과 트랜지스터, 전계 효과 트랜지스터 어레이 구조 및 전계 효과 트랜지스터 제조 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011151383A (ja) 2009-12-25 2011-08-04 Semiconductor Energy Lab Co Ltd 半導体装置
JP2012257187A (ja) 2010-08-06 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体集積回路
JP2013211537A (ja) 2012-02-29 2013-10-10 Semiconductor Energy Lab Co Ltd 半導体装置
WO2021053473A1 (ja) 2019-09-20 2021-03-25 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
M.Oota et al., "3D-Stacked CAAC-In-Ga-Zn Oxide FETs with Gate Length of 72nm", IEDM Tech. Dig., 2019, pp.50-53

Also Published As

Publication number Publication date
US20260075875A1 (en) 2026-03-12
CN120266595A (zh) 2025-07-04
JPWO2024116037A1 (https=) 2024-06-06
WO2024116037A1 (ja) 2024-06-06

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Q12 Application published

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