KR20240089139A - 다층 반사막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 장치의 제조 방법 - Google Patents

다층 반사막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 장치의 제조 방법 Download PDF

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Publication number
KR20240089139A
KR20240089139A KR1020247014136A KR20247014136A KR20240089139A KR 20240089139 A KR20240089139 A KR 20240089139A KR 1020247014136 A KR1020247014136 A KR 1020247014136A KR 20247014136 A KR20247014136 A KR 20247014136A KR 20240089139 A KR20240089139 A KR 20240089139A
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KR
South Korea
Prior art keywords
layer
film
substrate
multilayer reflective
protective film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247014136A
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English (en)
Korean (ko)
Inventor
마사노리 나까가와
코따 스즈끼
히비끼 키시다
Original Assignee
호야 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 호야 가부시키가이샤 filed Critical 호야 가부시키가이샤
Publication of KR20240089139A publication Critical patent/KR20240089139A/ko
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020247014136A 2021-10-28 2022-10-26 다층 반사막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 장치의 제조 방법 Pending KR20240089139A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2021-176757 2021-10-28
JP2021176757 2021-10-28
PCT/JP2022/040039 WO2023074770A1 (ja) 2021-10-28 2022-10-26 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法

Publications (1)

Publication Number Publication Date
KR20240089139A true KR20240089139A (ko) 2024-06-20

Family

ID=86158070

Family Applications (1)

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KR1020247014136A Pending KR20240089139A (ko) 2021-10-28 2022-10-26 다층 반사막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 장치의 제조 방법

Country Status (6)

Country Link
US (1) US20240411220A1 (https=)
EP (1) EP4425258A4 (https=)
JP (1) JPWO2023074770A1 (https=)
KR (1) KR20240089139A (https=)
TW (1) TW202326279A (https=)
WO (1) WO2023074770A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7612408B2 (ja) * 2020-12-22 2025-01-14 Hoya株式会社 反射型マスクブランク、反射型マスク、反射型マスクの製造方法、及び半導体デバイスの製造方法
TW202603476A (zh) * 2024-03-23 2026-01-16 日商Ｈｏｙａ股份有限公司 附導電膜基板、附多層反射膜基板、遮罩基底、反射型遮罩、及半導體裝置之製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011071123A1 (ja) 2009-12-09 2011-06-16 旭硝子株式会社 Ｅｕｖリソグラフィ用反射層付基板、ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、および該反射層付基板の製造方法
WO2012014904A1 (ja) 2010-07-27 2012-02-02 旭硝子株式会社 Ｅｕｖリソグラフィ用反射層付基板、およびｅｕｖリソグラフィ用反射型マスクブランク

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014127630A (ja) * 2012-12-27 2014-07-07 Asahi Glass Co Ltd Ｅｕｖリソグラフィ用反射型マスクブランクおよびその製造方法
JP6301127B2 (ja) * 2013-12-25 2018-03-28 Hoya株式会社 反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法
TWI833025B (zh) * 2019-06-20 2024-02-21 日商Ｈｏｙａ股份有限公司 反射型遮罩基底、反射型遮罩、以及反射型遮罩及半導體裝置之製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011071123A1 (ja) 2009-12-09 2011-06-16 旭硝子株式会社 Ｅｕｖリソグラフィ用反射層付基板、ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、および該反射層付基板の製造方法
WO2012014904A1 (ja) 2010-07-27 2012-02-02 旭硝子株式会社 Ｅｕｖリソグラフィ用反射層付基板、およびｅｕｖリソグラフィ用反射型マスクブランク

Also Published As

Publication number Publication date
EP4425258A1 (en) 2024-09-04
US20240411220A1 (en) 2024-12-12
EP4425258A4 (en) 2025-11-26
TW202326279A (zh) 2023-07-01
WO2023074770A1 (ja) 2023-05-04
JPWO2023074770A1 (https=) 2023-05-04

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