KR20230115197A - Storage controller managing different types of blocks, an operating method thereof, and an operating method of a storage device including the same - Google Patents

Abstract

A storage controller according to an embodiment of the present disclosure communicates with a host and a non-volatile memory device. A method for operating a storage controller comprises: a step of receiving a first request indicating a first zone among a plurality of zones; a step of setting a state of the first zone to an active state in response to the first request; a step of allocating a first memory block among the plurality of memory blocks of the non-volatile memory device to the first zone updated as the active state; and a step of storing user data corresponding to the first request in the first memory block. Reliability of the first memory block is higher than that of a second memory block allocated in a second zone having a non-active state among the plurality of zones. The storage controller also supports the zoned namespace (ZNS) standard of NVM express.

Description

A storage controller managing different types of blocks, a method of operating the same, and a method of operating a storage device including the same

The present disclosure relates to a storage controller, and more particularly, to a storage controller that manages different types of blocks.

The memory device stores data according to a write request and outputs the stored data according to a read request. For example, memory devices include volatile memory devices, such as dynamic random access memory (DRAM) and static RAM (SRAM), in which stored data is lost when power is cut off, flash memory devices, and phase-change RAM (PRAM). ), MRAM (Magnetic RAM), RRAM (Resistive RAM), etc.

In general, non-volatile memory devices can store data according to random access. As garbage collection (GC) is frequently performed on the entire area according to random access, the lifetime of the storage device may be reduced. As a wide over-provisioning (OP) area is allocated for frequent garbage collection, wear leveling, bad block management, etc., the usable storage capacity of the storage device may decrease. To prevent this, a technique of classifying memory blocks of a non-volatile memory device into zones and sequentially storing related data within the zones may be used.

According to the present disclosure, an object of the present disclosure is to provide a storage controller that manages different types of blocks, a method of operating the same, and a method of operating a storage device including the same.

According to an embodiment of the present disclosure, a storage controller communicates with a host and a non-volatile memory device, and a method of operating the storage controller includes receiving a first request indicating a first zone among a plurality of zones from the host; In response to the first request, setting a state of the first zone to an active state, wherein a first memory block among a plurality of memory blocks of the non-volatile memory device is updated to the active state; allocating to, and storing user data corresponding to the first request in the first memory block, wherein the reliability of the first memory block determines whether a second one of the plurality of zones having a non-active state It is higher than the reliability of the second memory block allocated to the zone, and the storage controller supports the NVM Express ZNS (Zoned Namespace) standard.

The storage controller according to an embodiment of the present disclosure may include a zone state manager configured to transition a state of a target zone among a plurality of zones according to a request of a host, and if the transitioned state of the target zone is an active state. A block allocation unit configured to allocate a first memory block among the plurality of memory blocks to the target zone, and target data corresponding to the request of the host to the first memory block under the control of the block allocation unit. including a buffer memory configured to store, support the ZNS (Zoned Namespace) standard of NVM Express, and the reliability of the first memory block is assigned to a zone having a non-active state among the plurality of zones; higher than the reliability of

A storage device according to an embodiment of the present disclosure may communicate with a host, and a method of operating the storage device may include receiving a first request indicating a first zone among a plurality of zones from the host, and responding to the first request. setting the state of the first zone to an active state, allocating a first memory block among a plurality of memory blocks of a non-volatile memory device to the first zone updated to the active state, and and storing user data corresponding to a first request in the first memory block, wherein reliability of the first memory block is determined by a second memory allocated to a second zone having a non-active state among the plurality of zones. higher than block reliability, and the storage device supports the ZNS (Zoned Namespace) standard of NVM Express.

According to some embodiments of the present disclosure, a storage controller managing different types of blocks, an operating method thereof, and an operating method of a storage device including the same are provided.

In addition, a storage controller is provided that guarantees reliability of a write operation and efficiently manages large-capacity data by managing written data in a large-capacity memory block and managing write-in-process data in a high-reliability memory block.

1 is a block diagram of a storage system according to an embodiment of the present disclosure.
FIG. 2 is a block diagram embodying the storage controller of FIG. 1 according to some embodiments of the present disclosure.
3 is a diagram illustrating a sequential write operation according to some embodiments of the present disclosure.
4 is a diagram illustrating states of a zone according to some embodiments of the present disclosure.
FIG. 5 is a diagram illustrating an operating method of the storage device of FIG. 1 according to some embodiments of the present disclosure.
6 is a diagram illustrating an operation of allocating a first type of memory block to a zone according to some embodiments of the present disclosure.
7 is a flowchart illustrating an operation of allocating a first type of memory block to a zone according to some embodiments of the present disclosure.
FIG. 8 is a diagram illustrating an operating method of the storage device of FIG. 1 according to some embodiments of the present disclosure.
9 is a diagram illustrating an operation of allocating a second type memory block to a zone according to some embodiments of the present disclosure.
10 is a flowchart illustrating an operation of allocating a second type of memory block to a zone according to some embodiments of the present disclosure.
FIG. 11 is a diagram illustrating an operating method of the storage controller of FIG. 1 according to some embodiments of the present disclosure.
12 is a diagram illustrating an operation of deallocating a memory block allocated to a zone according to some embodiments of the present disclosure.
13 is a flowchart illustrating an operation of deallocating a memory block allocated to a zone according to some embodiments of the present disclosure.
14 is a block diagram exemplarily illustrating a data center to which a storage device according to an embodiment of the present invention is applied.

Hereinafter, embodiments of the present disclosure will be described clearly and in detail to the extent that those skilled in the art can easily practice the embodiments of the present disclosure. In order to facilitate overall understanding in describing the present invention, similar reference numerals are used for similar elements in the drawings, and redundant descriptions of similar elements are omitted.

1 is a block diagram of a storage system according to an embodiment of the present disclosure. Referring to FIG. 1 , a storage system 10 may include a host 11 and a storage device 100 . In some embodiments, the storage system 10 is a computing system configured to process various information, such as a personal computer, notebook, laptop, server, workstation, tablet PC (Personal Computer), smart phone, digital camera, black box, etc. can be

The host 11 may control overall operations of the storage system 10 . For example, the host 11 may store data in the storage device 100 or read data stored in the storage device 100 . For example, the host 11 may provide write data to the storage device 100 or request read data stored in the storage device 100 .

The storage device 100 may include a storage controller 110 and a non-volatile memory device 120 . The non-volatile memory device 120 may store data. The storage controller 110 may store data in the non-volatile memory device 120 or read data stored in the non-volatile memory device 120 . The non-volatile memory device 120 may operate under the control of the storage controller 110 . For example, the storage controller 110 stores data in the non-volatile memory device 120 or stores data in the non-volatile memory device 120 based on a command CMD indicating an operation and an address ADD indicating a location of data. Data stored in device 120 may be read.

In some embodiments, the storage device 100 may allocate memory blocks corresponding to zones according to a request of the host 11 and sequentially store data in the allocated memory blocks. A zone may conceptually refer to some physically sequential memory blocks among a plurality of memory blocks of the non-volatile memory device 120 . For example, the storage controller 110 and the non-volatile memory device 120 may support a nonvolatile memory express (NVMe) zoned namespace (ZNS) standard. A more detailed description of the ZNS standard will be described later with reference to FIG. 4 .

In some embodiments, the non-volatile memory device 120 may be a NAND flash memory, but the scope of the present disclosure is not limited thereto, and the non-volatile memory device 120 may be a phase-change random access memory (PRAM). , MRAM (Magnetic Random Access Memory), RRAM (Resistive Random Access Memory), FRAM (Ferroelectric Random Access Memory), etc., may be one of various storage devices capable of maintaining stored data even when power supply is cut off.

The non-volatile memory device 120 may include a first type memory block and a second type memory block. In some embodiments, the number of bits stored per cell of the first type memory block may be one. The number of bits stored per cell of the first-type memory block may be less than the number of bits stored per cell of the second-type memory block. A speed of a write operation for the first type memory block may be high. The first type of memory block may be a highly reliable memory block.

In some embodiments, the number of bits stored per cell of the second type memory block may be two or more. A write operation speed for the second type memory block may be slow. The second type of memory block may be a block capable of efficiently storing large amounts of data.

For example, the first type memory block may be implemented as a single level cell (SLC) in which one cell stores one bit. The second type of memory block includes a multi-level cell (MLC) in which one cell stores two bits, a triple level cell in which one cell stores three bits, and one A cell may be implemented as one of cells that store several bits, such as a quadruple level cell that stores four bits.

The storage controller 110 may include a ZNS table 111 , a zone state manager 112 , and a block allocation unit 113 .

The ZNS table 111 may manage state information indicating the state of each of a plurality of zones and block allocation information indicating memory blocks allocated to each of the plurality of zones. For example, the zone state manager 112 and block allocation unit 113 may manage the ZNS table 111 .

The ZNS table 111 may manage a plurality of state information indicating states of each of a plurality of zones under the control of the zone state manager 112 . The zone state manager 112 may update the ZNS table 111 by reflecting the state transition of the zone according to the request of the host.

The ZNS table 111 may manage a plurality of block allocation information indicating memory blocks allocated to each of a plurality of zones under the control of the block allocation unit 113 . The block allocation unit 113 may update the ZNS table 111 by reflecting the allocation of a new memory block within a zone or deallocation of a previously allocated memory block.

When the storage device 100 is powered off, the ZNS table 111 may store a plurality of state information and a plurality of block allocation information in the non-volatile memory device 120 .

The zone state manager 112 may receive requests conforming to the ZNS standard from the host 11 and process requests conforming to the ZNS standard. The zone state manager 112 may change the state of each of the plurality of zones and update state information of each of the plurality of zones stored in the ZNS table 111 according to a request received from the host 11 .

The block allocation unit 113 may manage block allocation information indicating memory blocks allocated to a zone. The block allocation unit 113 may manage a plurality of block allocation information indicating memory blocks allocated to each of a plurality of zones under the control of the zone state manager 112 .

For example, the block allocation unit 113 allocates a memory block in a zone or deallocates the allocated memory block according to a request of the zone state manager 112, and allocates each of a plurality of zones stored in the ZNS table 111. Block allocation information can be updated.

FIG. 2 is a block diagram embodying the storage controller of FIG. 1 according to some embodiments of the present disclosure. Referring to FIGS. 1 and 2 , the storage controller 110 may communicate with the host 11 and the non-volatile memory device 120 .

The storage controller 110 includes a ZNS table 111, a zone state manager 112, a block allocation unit 113, a volatile memory device 114, a read only memory (ROM) 115, a processor 116, and a host interface. circuitry 117 , and non-volatile memory interface circuitry 118 . The ZNS table 111, zone state manager 112, and block assignment unit 113 may correspond to the ZNS table 111, zone state manager 112, and block assignment unit 113 in FIG.

In some embodiments, the ZNS table 111, zone state manager 112, and block allocation unit 113 may be implemented in firmware. For example, the non-volatile memory device 120 may store instructions corresponding to the ZNS table 111 , the zone state manager 112 , and the block allocation unit 113 . The processor 116 may load instructions of the non-volatile memory device 120 into the volatile memory device 114 . The processor 116 may operate the ZNS table 111, the zone state manager 112, and the block allocation unit 113 by executing the loaded instructions.

The volatile memory device 114 may include a buffer memory 114a. The volatile memory device 114 may be used as a main memory, cache memory, or operating memory of the storage controller 110 in addition to the buffer memory 114a. For example, the volatile memory device 114 may be implemented as static random access memory (SRAM) or dynamic random access memory (DRAM).

The ROM 115 may be used as a read-only memory for storing information necessary for the operation of the storage controller 110 . The processor 116 may control overall operations of the storage controller 110 .

The storage controller 110 may communicate with the host 11 through the host interface circuit 117 . In some embodiments, the host interface circuitry 117 may include various interfaces such as Serial ATA (SATA), Peripheral Component Interconnect Express (PCIe), Serial Attached SCSI (SAS) interface, Nonvolatile Memory express (NVMe), Universal Flash Storage (UFS), and the like. It can be implemented based on at least one of the interfaces. In addition, the host interface circuitry 118 may support the ZNS standard of NVMe.

The storage controller 110 may communicate with the non-volatile memory device 120 through the non-volatile memory interface circuit 118 . In some embodiments, the non-volatile memory interface circuit 118 may be implemented based on a NAND interface. In addition, the non-volatile memory interface circuit 119 may support a sequential write operation according to the NVMe ZNS standard.

3 is a diagram illustrating a sequential write operation according to some embodiments of the present disclosure. Referring to FIGS. 1 and 3 , an operation of sequentially writing data to the non-volatile memory device 120 by the storage controller will be described.

A typical storage controller can store data based on random access. For example, when data is stored according to random access, memory blocks corresponding to logically sequential address blocks may be randomly distributed in the non-volatile memory device. A non-volatile memory device may not be structurally overwritten. When an erase operation is performed, garbage collection (GC) may be performed to read data and copy data to another memory block in order to individually manage valid data and invalid data in a memory block.

As a general storage controller frequently performs garbage collection on the entire area of a non-volatile memory device, the lifetime (eg, program/erase (P/E) cycle) of the non-volatile memory device is shortened. can reduce Also, as a large overprovisioning (OP) area is allocated for frequent garbage collection, wear leveling, bad block management, etc., the usable storage capacity of the non-volatile memory device may be reduced.

According to example embodiments of the present disclosure, the storage controller 110 may perform a sequential write operation. For better understanding of the present disclosure, logical areas and physical areas of the first through Nth zones are shown together. N is any natural number. A logical area may include addresses identifiable by the host 11 . The physical area may include locations or addresses of memory blocks within the non-volatile memory device 120 . A logical area and a physical area may have a mapping relationship with each other.

Referring to the logical area, the storage controller 110 may manage first to Nth zones. The first through Nth zones may be managed independently of each other. For example, the host 11 may operate a first application and a second application. The first application may manage data included in the first zone. The second application may manage data included in the second zone. That is, data with similar uses and usage cycles managed by the same application can be managed within the same zone.

Each of the first through Nth zones may include a plurality of logical block addresses. For example, the first zone may include the first to m th logical block addresses LBA1 to LBAm. m is any natural number. The first to m th logical block addresses LBA1 to LBAm may be logically sequential.

The storage controller 110 may sequentially store data in the non-volatile memory device 120 using the write pointer. For example, data corresponding to the first logical block address LBA1 and the second logical block address LBA2 are sequentially programmed into the non-volatile memory device 120, and the buffer memory 114a of the storage controller 110 ) stores data corresponding to the third logical block address LBA3, the write pointer may point to the third logical block address LBA3.

Referring to the physical area, the user memory 121a may include a plurality of blocks T1_BLK. The plurality of blocks T1_BLK may be classified into first through Nth zones. The plurality of blocks T1_BLK of the first zone may be physically sequential first to mth blocks T1_BLK1 to T1_BLKm. The first to m th blocks T1_BLK1 to T1_BLKm of the first zone may correspond to the first to m th logical block addresses LBA1 to LBAm of the first zone, respectively. The storage controller 110 may manage data corresponding to a write request received from the host 11 to be logically and physically sequentially stored in the non-volatile memory device 120 . That is, the storage controller 110 may support sequential writing.

For better understanding of the present disclosure, it has been described that a logical block address corresponds to one block, but the scope of the present disclosure is not necessarily limited thereto. The logical block addresses may each correspond to sequential sub-blocks or sequential programming units (eg, units in which memory cells are programmed) within one block while maintaining logical sequence. The correspondence relationship between logical block addresses and memory blocks may be variously modified and implemented by a person skilled in the art to which the present disclosure belongs.

As described above, according to example embodiments of the present disclosure, the storage controller 110 may manage data in units of zones instead of managing data in the entire area of the non-volatile memory device 120 . Based on zone-based data management, the data processing speed of the storage device 100 is improved and power consumption is reduced according to the reduction of I/O load by garbage collection (GC) and the reduction of additional read and write operations. can Also, since an over-provisioning (OP) area may be reduced due to a reduction in garbage collection (GC) load, the usable storage capacity of the non-volatile memory device 120 may be increased.

4 is a diagram illustrating states of zones according to some embodiments of the present disclosure. Referring to FIGS. 1 and 4 , a state machine associated with a zone of the storage device 100 according to the ZNS standard is described.

According to embodiments of the present disclosure, zones managed by the storage device 100 may have one of a ZSE state, a ZSIO state, a ZSEO state, a ZSC state, and a ZSF state. As the storage device 100 processes the request received from the host 11, the state of the zone may change.

ZSE state, and ZSF state can be classified as non-active state. ZSIO state, ZSEO state, and ZSC state can be classified as active states. Active zones may be limited by the Max Active Resources field. ZSIO state and ZSEO state can be classified as open state. Open state zones can be limited by the Max Open Resources field.

The ZSE state may indicate an empty state. In the ZSE state, the memory blocks may not yet store data, and the write pointer may point to the lowest logical block address (eg, the lowest numbered logical block address of those managed by the zone). . A write pointer in ZSE state may be valid. ZSE state can transition to one of ZSIO state, ZSEO state, ZSC state, and ZSF state.

The ZSIO state may indicate an implicitly opened state. The ZSIO state may be implicitly opened by executing a write command received from the host 11 . In the ZSIO state, the memory block may store data corresponding to a write command. ZSIO state can transition to one of ZSE state, ZSEO state, ZSC state, and ZSF state. When the open resource is saturated, the ZSIO state may transition to the ZSC state even if there is no close command.

The ZSEO state may indicate an explicitly opened state. The ZSEO state may be explicitly opened by executing an open command received from the host 11 . In the ZSEO state, the memory block may subsequently receive a write command and then store data corresponding to the write command. ZSEO state can transition to one of ZSE state, ZSC state, and ZSF state. ZSEO status may have higher priority for open resources than ZSIO status. The ZSEO state may be transitioned to the ZSC state only by a close command.

The ZSC state may indicate a closed state. By receiving a set zone descriptor extension command when there are active resources available in ZSE state, or by receiving a close command or open resources are saturated in ZSIO state, or by receiving a close command in ZSEO state, ZSC state can be entered. In the ZSC state, a memory block cannot store data corresponding to a write command. The ZSC state may transition to one of the ZSE state, ZSIO state, ZSEO state, and ZSF state.

The ZSF state may indicate a full state. In the ZSE state, memory blocks may be full by stored data, and the write pointer may point to a top-level logical block address (eg, the highest-numbered logical block address of those managed by the zone). . Write pointers in ZSF state may be invalid. The ZSF state may be transitioned to the ZSE state by a reset zone command.

FIG. 5 is a diagram illustrating an operating method of the storage device of FIG. 1 according to some embodiments of the present disclosure. Referring to FIGS. 1 and 5 , a memory block allocation operation of allocating a first type memory block T1_BLK to a target zone of the storage device 100 is illustrated. The storage controller 110 and the non-volatile memory device 120 may respectively correspond to the storage controller 110 and the non-volatile memory device 120 of FIG. 1 .

The storage controller 110 may include a ZNS table 111 , a zone state manager 112 , and a block allocation unit 113 . Each of the ZNS table 111, zone state manager 112, and block allocation unit 113 may correspond to the ZNS table 111, zone state manager 112, and block allocation unit 113 of FIG.

Referring to state information of the ZNS table 111 shown in FIG. 5 , each of the first to fourth zones Z1 to Z4 may be in a full state. Also, referring to the block allocation information of the ZNS table 111, the sixth block BLK6 is allocated to the first zone Z1, the seventh block BLK7 is allocated to the second zone Z2, and An eighth block BLK8 may be allocated to the third zone Z3, and a ninth block BLK9 may be allocated to the fourth zone Z4.

Referring to the non-volatile memory device 120 shown in FIG. 5 , first to tenth blocks BLK1 to BLK10 are shown. The first to fifth blocks BLK1 to BLK5 may be a first type memory block T1_BLK. The sixth to tenth blocks BLK6 to BLK10 may be a second type memory block T2_BLK.

Hereinafter, an operating method of the storage device 100 for allocating a first type memory block T1_BLK to a target zone according to some embodiments of the present disclosure will be described.

In a first operation (①), the zone state manager 112 may receive a first request RQ1 from the host 11 . The first request RQ1 may include a command CMD and an address ADD. The command CMD may be a command for setting the state of the target zone to the first state. The first state may be an active state shown in FIG. 4 . For example, the command CMD may be a command for transitioning the state of the target zone from a ZSE state to one of a ZSIO state, a ZSEO state, and a ZSC state.

The zone state manager 112 may determine a target zone among a plurality of zones based on the address ADD. For example, the zone state manager 112 may determine the fifth zone Z5 as the target zone based on the address ADD.

In the second operation (②), the zone state manager 112 may update the state of the target zone based on the first request RQ1. The zone state manager 112 may update state information of the ZNS table 111 based on the updated state. For example, the zone state manager 112 may update the state of the fifth zone Z5 from an empty state to an active state based on the first request RQ1.

In the third operation ③, the zone state manager 112 may request a block allocation operation from the block allocation unit 113. If the updated state of the target zone is an active state, the zone state manager 112 may transmit a request indicating allocation of the first type memory block T1_BLK to the target zone to the block assignment unit 113 .

In the fourth operation (④), the block allocation unit 113 may allocate the first type memory block T1_BLK to the target zone updated to an active state. The block allocation unit 113 may update block allocation information of the target zone.

For example, the block allocation unit 113 may allocate the first block BLK1, which is the first type memory block T1_BLK, to the fifth zone Z5. The block allocation unit 113 may update block allocation information of the fifth zone Z5 of the ZNS table 111 from 'None' to the first block BLK.

In the fifth operation (⑤), the block allocation unit 113 may request the buffer memory 114a to perform the first request RQ1. In the sixth operation (⑥), the buffer memory 114a may store target data corresponding to the first request RQ1 in the first block BLK1 allocated to the fifth zone Z5.

6 is a diagram illustrating an operation of allocating a first type of memory block to a zone according to some embodiments of the present disclosure. Referring to FIG. 6 , a logical area and a physical area when a zone is updated to an active state are shown.

Referring to the logical area, first to fifth zones Z1 to Z5 are shown, and referring to the physical area, first to tenth blocks BLK1 to BLK10 are shown. The first to fifth blocks BLK1 to BLK5 may be a first type memory block T1_BLK. The sixth to tenth blocks BLK6 to BLK10 may be a second type memory block T2_BLK.

In some embodiments, the number of memory blocks allocated to one zone may vary according to the type of memory block. For example, if the memory block is an SLC memory block, four SLC memory blocks may be allocated to one zone. If the memory block is an MLC memory block, two MLC memory blocks may be allocated to one zone. If the memory block is a QLC memory block, one QLC memory block may be allocated to one zone.

In some embodiments, when the first type memory block T1_BLK is an SLC memory block, four first type memory blocks T1_BLK may be allocated to one zone. That is, the first to fourth blocks BLK1 to BLK4 may be allocated to the fifth zone Z5. In this case, the write operation of the storage controller may be sequentially performed on the first to fourth blocks BLK1 to BLK4.

If the second type memory block T2_BLK is a QLC memory block, one second type memory block T2_BLK may be allocated to one zone. That is, the sixth block BLK6 is allocated to the first zone Z1, the seventh block BLK7 is allocated to the second zone Z2, and the eighth block BLK8 is allocated to the third zone Z3. and the ninth block BLK9 may be allocated to the fourth zone Z4.

FIG. 7 is a diagram of four first-type memory blocks T1_BLK in order illustrating an operation of allocating a first-type memory block to a zone according to some embodiments of the present disclosure. Referring to FIGS. 5 and 7 , an operation of allocating a memory block for a zone updated in an active state of the storage controller 110 is illustrated. The storage controller 110 may correspond to the storage controller 110 of FIG. 5 .

In operation S110 , the storage controller 110 may receive a first request RQ1 from the host. The first request RQ1 may include a command CMD and an address ADD. The storage controller 110 may determine a target zone to which an allocation operation is performed based on the address ADD.

In step S120 , based on the first request RQ1 , the storage controller 110 may update the state of the target zone from an empty state to an active state.

In operation S130 , the storage controller 110 may allocate the first type memory block T1_BLK to the target zone updated to an active state. The storage controller 110 may allocate a first block BLK1 that is a first type memory block T1_BLK to the target zone. For example, the first type memory block T1_BLK may be an SLC memory block.

In some embodiments, operation S130 may further include allocating, by the storage controller 110, second to fourth blocks BLK2 to BLK4 that are the first type memory block T1_BLK to the target zone. The storage controller 110 may sequentially allocate the first to fourth blocks BLK1 to BLK4 to the target zone.

In step S140, the storage controller 110 may store data in the allocated first type memory block T1_BLK. For example, the storage controller 110 may store data in a first block BLK that is a first type memory block T1_BLK.

In some embodiments, when the storage controller 110 sequentially allocates the first to fourth blocks BLK1 to BLK4, which are the first type memory block T1_BLK, to the target zone, step S140 sequentially allocates the target data. A step of storing the first to fourth blocks BLK1 to BLK4 may be included.

FIG. 8 is a diagram illustrating an operating method of the storage device of FIG. 1 according to some embodiments of the present disclosure. Referring to FIGS. 1 and 8 , a memory block allocation operation of allocating a second type memory block T2_BLK to a target zone of the storage device 100 is illustrated.

The storage controller 110 and the non-volatile memory device 120 may respectively correspond to the storage controller 110 and the non-volatile memory device 120 of FIG. 1 .

The storage controller 110 may include a ZNS table 111 , a zone state manager 112 , and a block allocation unit 113 . Each of the ZNS table 111, zone state manager 112, and block allocation unit 113 may correspond to the ZNS table 111, zone state manager 112, and block allocation unit 113 of FIG.

In some embodiments, the method of operating the storage device 100 illustrated in FIG. 8 may be performed after the method of operating the storage device 100 illustrated in FIG. 5 . That is, after allocating the first type memory block T1_BLK1 to the target zone based on the first request RQ1 and storing target data in the allocated first type memory block T1_BLK1, the storage controller ( 110 may receive a second request RQ2 from the host 11 .

Hereinafter, according to some embodiments of the present disclosure, after the first type memory block T1_BLK1 is allocated to the target zone, the storage device 100 allocates a second type memory block T2_BLK to the target zone. The operation method of is described.

In the first operation (①), the zone state manager 112 may receive a second request RQ2 from the host 11 . The second request RQ2 may include a command CMD and an address ADD. The command CMD may be a command for updating the state of the target zone from an active state to a full state. The pull state may be the pull state shown in FIG. 4 . For example, the command CMD may be a command for transitioning the state of the target zone from at least one of a ZSIO state, a ZSEO state, and a ZSC state to ZSF.

The zone state manager 112 may determine a target zone among a plurality of zones based on the address ADD. For example, the zone state manager 112 may determine the fifth zone Z5 as the target zone based on the address ADD.

In the second operation (②), the zone state manager 112 may update the state of the target zone based on the second request RQ2. The zone state manager 112 may update state information of the ZNS table 111 based on the updated state. For example, the zone state manager 112 may update the state of the fifth zone Z5 from an active state to a full state based on the second request RQ2.

In the third operation ③, the zone state manager 112 may request a block allocation operation from the block allocation unit 113. If the updated state of the target zone is the full state, the zone state manager 112 may transmit a request indicating allocation of the second type memory block T2_BLK to the target zone to the block assignment unit 113 .

In the fourth operation (④), the block allocation unit 113 may allocate the second type memory block T2_BLK to the target zone updated to a full state. In some embodiments, the block allocation unit 113 may refer to the ZNS table 111 to determine a memory block to be allocated to the target zone from among a plurality of memory blocks that are the second type memory blocks T2_BLK.

For example, the block allocation unit 113 may check block allocation information of the first to fourth zones Z1 to Z4 by referring to the ZNS table 111 . The block allocation unit 113 assigns the ninth block (BLK6 to BL9) to the fifth zone Z5 based on the allocation of the sixth to ninth blocks BLK6 to BL9 to the first to fourth zones Z1 to Z4, respectively. BLK9) and a physically sequential tenth block BLK10 may be allocated.

The block allocation unit 113 may update block allocation information of the target zone in the ZNS table 111 .

For example, the block allocation unit 113 may allocate the tenth block BLK10, which is the second type memory block T2_BLK, to the fifth zone Z5. The block allocation unit 113 may update block allocation information of the fifth zone Z5 of the ZNS table 111 from the first block BLK1 to the tenth block BLK10.

In the fifth operation (⑤), the block allocation unit 113 may request the buffer memory 114a to perform the second request RQ2. In the sixth operation (⑥), the buffer memory 114a may move the target data stored in the first block BLK1 to the tenth block BLK10. In some embodiments, the buffer memory 114a may copy the target data stored in the first block BLK1 to the tenth block BLK10. The block allocation unit 113 may discard the first block BLK1 after copying the target data stored in the first block BLK1 to the tenth block BLK10.

As described above, data that has been written is managed in the second type memory block T2_BLK, which is a large-capacity memory block, and data in the process of being written is managed in the first type memory block T1_BLK, which is a high-reliability memory block. Reliability of a write operation of the storage device 100 may be guaranteed. Also, the story device 100 can efficiently manage large amounts of data.

8 shows that the storage controller 110 receives a second request from the host 11 after the storage controller 110 stores target data in the first type memory block T1_BLK1 allocated to the target zone according to the first request. An embodiment of updating the state of the target zone to a full state based on receiving (RQ2) has been described, but the present disclosure is not limited thereto.

In some embodiments, when the buffer memory 114a stores the target data in the first type memory block T1_BLK allocated to the target zone according to the first request, the block allocation unit 113 stores the target data allocated to the target zone. It may be determined whether there is remaining capacity in the type 1 memory block T1_BLK.

When it is determined that there is no remaining capacity in the first type memory block T1_BLK allocated to the target zone, the block allocation unit 113 may allocate the second type memory block T2_BLK to the target zone. The block allocation unit 113 may request the buffer memory 114a to move the target data stored in the first type memory block T1_BLK to the second type memory block T2_BLK.

For example, when the buffer memory 114a stores target data in the first to fourth blocks BLK1 to BLK4 allocated to the target zone according to the first request, the block allocation unit 113 performs the first to fourth blocks. It may be determined whether there is remaining capacity in the 4 blocks BLK1 to BLK4. When it is determined that there is no remaining capacity in the first to fourth blocks BLK1 to BLK4, the block allocation unit 113 allocates the tenth block BLK10, which is the second type memory block T2_BLK, to the target zone. can The block allocation unit 113 may request the buffer memory 114a to move the target data stored in the first to fourth blocks BLK1 to BLK4 to the tenth block BLK10.

As described above, after the write operation is completed, the storage device 100 may move the data stored in the first type memory block T1_BLK with high reliability to the second type memory block T2_BLK with low reliability. That is, the storage device 100 guarantees that a write operation is performed on a highly reliable memory block, so that even if power-off occurs, recovery is possible with a small amount of resources. The storage device 100 can use resources efficiently, and performance of the storage device 100 can be improved.

9 is a diagram illustrating an operation of allocating a second type memory block to a zone according to some embodiments of the present disclosure. Referring to FIG. 9 , a physical area when a zone is in a full state is shown.

Referring to the physical area before the storage controller 110 performs the block allocation operation according to the second request RQ2, the first to fourth blocks BLK1 to BLK4 are allocated to the fifth zone Z5, The sixth block BLK6 is allocated to the first zone Z1, the seventh block BLK7 is allocated to the second zone Z2, and the eighth block BLK8 is allocated to the third zone Z3. , and the ninth block BLK9 may be allocated to the fourth zone Z4.

Referring to the physical area after the storage controller 110 performs the block allocation operation according to the second request RQ2, the tenth block BLK10 may be allocated to the fifth zone Z5. In some embodiments, if the first type memory block T1_BLK is a QLC memory block and the second type memory block T2_BLK is an SLC memory block, the target stored in the first to fourth blocks BLK1 to BLK4 Data may be sequentially moved to the tenth block BLK10.

10 is a flowchart illustrating an operation of allocating a second type of memory block to a zone according to some embodiments of the present disclosure. Referring to FIGS. 8 and 10 , an operation of allocating a memory block for a zone updated to a full state of the storage controller 110 is illustrated. The storage controller 110 may correspond to the storage controller 110 of FIG. 8 .

In step S210 , the storage controller 110 may receive a second request RQ2 from the host. The second request RQ2 may include a command CMD and an address ADD. The storage controller 110 may determine a target zone to which an allocation operation is performed based on the address ADD.

In operation S220 , based on the second request RQ2 , the storage controller 110 may update the state of the target zone from an active state to a full state.

In step S230 , the storage controller 110 may allocate the second type memory block T2_BLK to the target zone updated to a full state. The storage controller 110 may allocate the tenth block BLK10 as the second type memory block T2_BLK to the target zone. For example, the second type memory block T2_BLK may be a QLC memory block.

In step S240, the storage controller 110 may move the data stored in the first type memory block T1_BLK1 to the allocated second type memory block T2_BLK. The storage controller 110 may move the data stored in the first block BLK1 to the tenth block BLK10.

In some embodiments, in step S240 , after moving the data stored in the first type memory block T1_BLK1 to the allocated second type memory block T2_BLK, the storage controller 110 moves the first type memory block discarding (T1_BLK1). For example, after moving the data stored in the first block BLK1 to the tenth block BLK10, the storage controller 110 may discard the first block BLK1.

FIG. 11 is a diagram illustrating an operating method of the storage device of FIG. 1 according to some embodiments of the present disclosure. Referring to FIGS. 1 and 11 , a memory block allocation deallocation operation of the storage device of FIG. 1 is illustrated. The storage controller 110 and the non-volatile memory device 120 may respectively correspond to the storage controller 110 and the non-volatile memory device 120 of FIG. 1 .

The storage controller 110 may include a ZNS table 111 , a zone state manager 112 , and a block allocation unit 113 . Each of the ZNS table 111, zone state manager 112, and block allocation unit 113 may correspond to the ZNS table 111, zone state manager 112, and block allocation unit 113 of FIG.

In some embodiments, the method of operating the storage device 100 illustrated in FIG. 11 may be performed after the method of operating the storage device 100 illustrated in FIG. 5 . That is, after allocating the first type memory block T1_BLK1 to the target zone based on the first request RQ1 and storing target data in the allocated first type memory block T1_BLK1, the storage controller ( 110 may receive a third request RQ3 from the host 11 .

Hereinafter, according to some embodiments of the present disclosure, after the first type memory block T1_BLK1 is allocated to the target zone, a storage device that deallocates the first type memory block T1_BLK1 allocated to the target zone. The operating method of 100 is described.

In the first operation (①), the zone state manager 112 may receive a third request RQ3 from the host 11 . The third request RQ3 may include a command CMD and an address ADD. The command CMD may be a command for transitioning the state of the target zone to an empty state. Empty may be the empty state shown in FIG. 4 . For example, the command CMD may be a command for transitioning the state of the target zone from ZSE state to at least one of ZSIO state, ZSEO state, and ZSC state.

The zone state manager 112 may determine a target zone among a plurality of zones based on the address ADD. For example, the zone state manager 112 may determine the fifth zone Z5 as the target zone based on the address ADD.

In the second operation (②), the zone state manager 112 may update the state of the target zone based on the third request RQ3. The zone state manager 112 may update state information of the ZNS table 111 based on the updated state. For example, the zone state manager 112 may update the state of the fifth zone Z5 from an active state to an empty state based on the third request RQ3.

In the third operation ③, the zone state manager 112 may request a block allocation operation from the block allocation unit 113. If the updated state of the target zone is an empty state, the zone state manager 112 may transmit a request indicating deallocation of the first type memory block T1_BLK allocated to the target zone to the block assignment unit 113 .

In the fourth operation (④), the block allocation unit 113 may deallocate the first type memory block T1_BLK allocated to the target zone updated to an empty state. The block allocation unit 113 may update block allocation information of the target zone.

For example, the block allocation unit 113 may deallocate the first block BLK1 allocated to the fifth zone Z5. The block allocation unit 113 may update block allocation information of the fifth zone Z5 of the ZNS table 111 to 'None' for the first block BLK.

In the fifth operation (⑤), the block allocation unit 113 may request the buffer memory 114a to perform the third request RQ3. In the sixth operation (⑥), the buffer memory 114a may delete data stored in the first block BLK1.

12 is a diagram illustrating an operation of deallocating a memory block allocated to a zone according to some embodiments of the present disclosure. Referring to FIG. 12 , when a zone is in an active state, a logical area and a physical area are shown.

Referring to the physical area before the storage controller 110 performs the block allocation deallocation operation according to the third request RQ3, the first to fourth blocks BLK1 to BLK4 are allocated to the fifth zone Z5 and , The sixth block BLK6 is allocated to the first zone Z1, the seventh block BLK7 is allocated to the second zone Z2, and the eighth block BLK8 is allocated to the third zone Z3. and the ninth block BLK9 may be allocated to the fourth zone Z4.

Referring to the physical area after the storage controller 110 performs a block allocation deallocation operation according to the third request RQ3, the first to fourth blocks BLK1 to BLK4 are deallocated from the fifth zone Z5. can do. After the first to fourth blocks BLK1 to BLK4 are deallocated from the fifth zone Z5 , data stored in the first to fourth blocks BLK1 to BLK4 may be deleted.

13 is a flowchart illustrating an operation of deallocating a memory block allocated to a zone according to some embodiments of the present disclosure. Referring to FIGS. 11 and 13 , an operation of deallocating a memory block allocated for a zone updated to an empty state of the storage controller 110 is illustrated. The storage controller 110 may correspond to the storage controller 110 of FIG. 11 .

In step S310, the storage controller 110 may receive a third request RQ3 from the host. The third request RQ3 may include a command CMD and an address ADD. The storage controller 110 may determine a target zone to which an allocation operation is performed based on the address ADD.

In step S320 , based on the second request RQ2 , the storage controller 110 may update the state of the target zone from an active state to an empty state.

In step S330, the storage controller 110 may deallocate the first type memory block T1_BLK allocated to the target zone. For example, the storage controller 110 may deallocate the first to fourth blocks BLK1 to BLK4 allocated to the fifth zone Z5 .

In step S340, the storage controller 110 may delete data stored in the deallocated first type memory block T1_BLK. For example, the storage controller 110 may delete data stored in the first to fourth blocks BLK1 to BLK4.

14 is a block diagram illustratively illustrating a data center to which a storage device according to an embodiment of the present invention is applied. The data center 1000 is a facility that maintains and manages various data and provides various services for the various data, and may be referred to as a data storage center. The data center 1000 may be a system for operating a search engine or database, and may be a computing system used in various institutions. The data center 1000 may include a plurality of application servers 1100_1 to 1100_n and a plurality of storage servers 1200_1 to 1200_m. The number of the plurality of application servers 1100_1 to 1100_n and the number of the plurality of storage servers 1200_1 to 1200_m may be variously modified.

Hereinafter, for convenience of description, an example of the first storage server 1200_1 will be described. Each of the remaining storage servers 1200_2 to 1200_m and the plurality of application servers 1100_1 to 1100_n may have a structure similar to that of the first storage server 1200_1.

The first storage server 1200_1 may include a processor 1210_1, a memory 1220_1, a switch 1230_1, a network interface connector (NIC) 1240_1, and a storage device 1250_1. The processor 1210_1 may control overall operations of the first storage server 1200_1. The memory 1220_1 may store various commands or data under the control of the processor 1210_1. The processor 1210_1 may be configured to access the memory 1220_1 to execute various instructions or to process data. In one embodiment, the memory 1220_1 may be DDR Double Data Rate Synchronous DRAM (SDRAM), High Bandwidth Memory (HBM), Hybrid Memory Cube (HMC), Dual In-line Memory Module (DIMM), Optane DIMM, or NVDIMM (Non-VDIMM). -Volatile DIMM) may include at least one of various types of memory devices.

In one embodiment, the number of processors 1210_1 and the number of memories 1220_1 included in the first storage server 1200_1 may be variously modified. In one embodiment, the processor 1210_1 and the memory 1220_1 included in the first storage server 1200_1 may configure a processor-memory pair, and the processor-memory pair included in the first storage server 1200_1 The number can be variously modified. In one embodiment, the number of processors 1210_1 and the number of memories 1220_1 included in the first storage server 1200_1 may be different from each other. The processor 1210_1 may include a single-core processor or a multi-core processor.

The switch 1230_1 may selectively connect the processor 1210_1 and the storage device 1250_1 or selectively connect the NIC 1240_1 and the storage device 1250_1 under the control of the processor 1210_1.

The NIC 1240_1 may be configured to connect the first storage server 1200_1 to the network NT. The NIC 1240_1 may include a network interface card, a network adapter, and the like. The NIC 1240_1 may be connected to the network NT through a wired interface, a wireless interface, a Bluetooth interface, an optical interface, or the like. The NIC 1240_1 may include an internal memory, a DSP, a host bus interface, and the like, and may be connected to the processor 1210_1 or the switch 1230_1 through the host bus interface. Host bus interfaces include Advanced Technology Attachment (ATA), Serial ATA (SATA), external SATA (e-SATA), Small Computer Small Interface (SCSI), Serial Attached SCSI (SAS), Peripheral Component Interconnection (PCI), PCIe ( PCI express), NVM express (NVMe), IEEE 1394, universal serial bus (USB), secure digital (SD) card, multi-media card (MMC), embedded multi-media card (eMMC), universal flash storage (UFS) , embedded universal flash storage (eUFS), compact flash (CF) card interface, and the like. In one embodiment, the NIC 1240_1 may be integrated with at least one of the processor 1210_1 , the switch 1230_1 , and the storage device 1250_1 .

The storage device 1250_1 may store data or output stored data under the control of the processor 1210_1. The storage device 1250_1 may include a controller 1251_1, a nonvolatile memory 1252_1, a DRAM 1253_1, and an interface 1254_1. In one embodiment, the storage device 1250_1 may be implemented as a ZNS SSD.

The controller 1251_1 may control overall operations of the storage device 1250_1. In an embodiment, the controller 1250_1 allocates the first type memory block or the second type memory block of the nonvolatile memory 1252_1 to the target zone or allocates the memory block to the target zone according to the updated state of the target zone. A block of memory can be deallocated.

The DRAM 1253_1 may be configured to temporarily store data to be stored in the nonvolatile memory 1252_1 or data read from the nonvolatile memory 1252_1. The DRAM 1253_1 may be configured to store various data (eg, meta data, mapping data, etc.) necessary for the controller 1251_1 to operate. The interface 1254_1 may provide a physical connection between the processor 1210_1, the switch 1230_1, or the NIC 1240_1 and the controller 1251_1. In one embodiment, the interface 1254_1 may be implemented in a Direct Attached Storage (DAS) method that directly connects the storage device 1250_1 with a dedicated cable. In one embodiment, the interface 1254_1 may be configured based on at least one of the various interfaces described above through the host interface bus.

The configurations of the above-described first storage server 1200_1 are exemplary, and the scope of the present invention is not limited thereto. The configurations of the above-described first storage server 1200_1 may be applied to other storage servers or each of a plurality of application servers. In one embodiment, in each of the plurality of application servers 1100_1 to 1100_n, the storage device 1150_1 may be selectively omitted.

The plurality of application servers 1100_1 to 1100_n and the plurality of storage servers 1200_1 to 1200_m may communicate with each other through the network NT. The network NT may be implemented using Fiber Channel (FC) or Ethernet. At this time, FC is a medium used for relatively high-speed data transmission, and an optical switch providing high performance/high availability may be used. According to the access method of the network NT, the storage servers 1200_1 to 1200_m may be provided as file storage, block storage, or object storage.

In one embodiment, the network NT may be a storage-only network, such as a storage area network (SAN). For example, the SAN may be an FC-SAN that uses an FC network and is implemented according to FC Protocol (FCP). Alternatively, the SAN may be an IP-SAN using a TCP/IP network and implemented according to the iSCSI (SCSI over TCP/IP or Internet SCSI) protocol. In one embodiment, network NT may be a general network such as a TCP/IP network. For example, the network NT may be implemented according to protocols such as FC over Ethernet (FCoE), Network Attached Storage (NAS), and NVMe over Fabrics (NVMe-oF).

In one embodiment, at least one of the plurality of application servers 1100_1 to 1100_n connects to at least one other of the plurality of application servers 1100_1 to 1100_n or the plurality of storage servers 1200_1 to 1200_m through the network NT. It may be configured to access at least one of them.

For example, the first application server 1100_1 may store data requested by a user or client in at least one of the plurality of storage servers 1200_1 to 1200_m through the network NT. Alternatively, the first application server 1100_1 may acquire data requested by a user or client from at least one of the plurality of storage servers 1200_1 to 1200_m through the network NT. In this case, the first application server 1100_1 may be implemented as a web server or a database management system (DBMS).

That is, the processor 1110_1 of the first application server 1100_1 may access the memory 1120_n or the storage device 1150_n of another application server (eg, 1100_n) through the network NT. Alternatively, the processor 1110_1 of the first application server 1100_1 may access the memory 1220_1 or the storage device 1250_1 of the first storage server 1200_1 through the network NT. Through this, the first application server 1100_1 may perform various operations on data stored in the other application servers 1100_2 to 1100_n or the plurality of storage servers 1200_1 to 1200_m. For example, the first application server 1100_1 executes or issues a command for moving or copying data between other application servers 1100_2 to 1100_n or a plurality of storage servers 1200_1 to 1200_m. can do. In this case, data to be moved or copied is transferred from the storage devices 1250_1 to 1250_m of the storage servers 1200_1 to 1200_m through the memories 1220_1 to 1220_m of the storage servers 1200_1 to 1200_m or directly to the application server. It may be moved to the memories 1120_1 to 1120_n of the fields 1100_1 to 1100_n. Data transmitted over the network NT may be encrypted data for security or privacy.

In one embodiment, the storage devices 1150_1 to 1110_n and 1250_1 to 1250_n may be the storage devices described with reference to FIGS. 1 to 13 and may be configured to perform various block allocation and block allocation operations. . As described with reference to FIGS. 1 to 13 , the storage devices 1150_1 to 1110_n and 1250_1 to 1250_n store a first-type memory block or a second-type memory block in the target zone according to the updated state of the target zone. can be allocated or the memory block allocated to the target zone can be deallocated.

The foregoing are specific embodiments for carrying out the present invention. The present invention will include not only the above-described embodiments, but also embodiments that can be simply or easily changed in design. In addition, the present invention will also include techniques that can be easily modified and practiced using the embodiments. Therefore, the scope of the present invention should not be limited to the above-described embodiments and should not be defined, but should be defined by those equivalent to the claims of this invention as well as the claims to be described later.

Claims (20)

A method of operating a storage controller in communication with a host and a non-volatile memory device comprising:
receiving, from the host, a first request indicating a first zone among a plurality of zones;
In response to the first request, setting a state of the first zone to an active state;
allocating a first memory block among a plurality of memory blocks of the non-volatile memory device to the first zone updated to the active state; and
Storing user data corresponding to the first request in the first memory block;
The reliability of the first memory block is higher than that of a second memory block allocated to a second zone having a non-active state among the plurality of zones, and
The storage controller supports the ZNS (Zoned Namespace) standard of NVM Express. According to claim 1,
receiving a second request indicating the first zone from the host after storing the user data in the first memory block;
setting a state of the first zone to a full state in response to the second request;
allocating the second memory block to the first zone updated to the full state; and
and copying the user data stored in the first memory block to the second memory block. According to claim 2,
and discarding the first memory block after copying the user data of the first memory block of the first zone to the second memory block. According to claim 1,
receiving a third request indicating the first zone from the host after storing the user data in the first memory block;
setting a state of the first zone to an empty state in response to the third request;
deallocating the first memory block allocated to the first zone; and
and deleting the user data stored in the first memory block. According to claim 1,
Allocating the first memory block among the plurality of memory blocks of the non-volatile memory device to the first zone updated to the active state includes:
and allocating a third memory block, a fourth memory block, and a fifth memory block among the plurality of memory blocks to the first zone. According to claim 5,
The number of data bits stored per cell of each of the first, third, fourth, and fifth memory blocks is less than the number of data bits stored per cell of the second memory block. According to claim 6,
Each of the first, third, fourth, and fifth memory blocks is a single level cell (SLC) memory block, and the second memory block is a quadruple level cell (QLC) memory block. According to claim 5,
Storing the user data corresponding to the first request in the first memory block comprises:
and sequentially storing the user data in the first, third, fourth, and fifth memory blocks. According to claim 7,
After sequentially storing the user data in the first, third, fourth, and fifth memory blocks, determining whether there is remaining capacity in the first, third, fourth, and fifth memory blocks step;
allocating the second memory block to the first zone when it is determined that there is no remaining capacity in the first, third, fourth, and fifth memory blocks; and
and sequentially copying the user data stored in the first, third, fourth, and fifth memory blocks to the second memory block. According to claim 1,
The first request indicates a transition to ZSIO state or ZSEO state of the ZNS standard, and
The active state includes the ZSIO state, the ZSEO state, and the ZSC state of the ZNS standard;
The non-active state indicates the ZSE state of the ZNS standard. a zone state manager configured to transition a state of a target zone among a plurality of zones according to a request of a host, and to generate a first allocation request when the state of the target zone is in an active state;
a block allocation unit configured to allocate a first memory block among a plurality of memory blocks in a non-volatile memory device to the target zone according to a first allocation request from the zone state manager; and
A buffer memory configured to store target data corresponding to the request of the host in the first memory block under the control of the block allocation unit;
Supports the Zoned Namespace (ZNS) standard of NVM Express, and
The reliability of the first memory block is higher than that of a second memory block allocated to a zone having a non-active state among the plurality of zones. According to claim 11,
the zone state manager is further configured to generate a second allocation request if the transitioned state of the target zone is full;
the block allocation unit is further configured to allocate the second memory block to the target zone according to a second allocation request of the zone state manager;
wherein the buffer memory is further configured to copy the target data stored in the first memory block to the second memory block. According to claim 11,
the zone state manager is further configured to generate a third allocation request if the transitioned state of the target zone is an empty state;
the block allocation unit is further configured to deallocate the first memory block allocated to the target zone according to a third allocation request of the zone state manager;
The storage controller of claim 1 , wherein the buffer memory is further configured to delete the target data stored in the first memory block. According to claim 11,
the block allocation unit if the transitioned state of the target zone is an active state. The storage controller is further configured to allocate a third memory block, a fourth memory block, and a fifth memory block among the plurality of memory blocks to the target zone. 15. The method of claim 14,
The number of data bits stored per cell of each of the first, third, fourth, and fifth memory blocks is less than the number of data bits stored per cell of the second memory block. According to claim 15,
Each of the first, third, fourth, and fifth memory blocks is a single level cell (SLC) memory block, and the second memory block is a quadruple level cell (QLC) memory block. According to claim 11,
and a zone table that communicates with the zone state manager and manages state information of each of the plurality of zones and block allocation information indicating allocated blocks of each of the plurality of zones. A method of operating a storage device communicating with a host,
receiving, from the host, a first request indicating a first zone among a plurality of zones;
In response to the first request, setting a state of the first zone to an active state;
allocating a first memory block among a plurality of memory blocks of a non-volatile memory device to the first zone updated to the active state; and
Storing user data corresponding to the first request in the first memory block;
The reliability of the first memory block is higher than that of a second memory block allocated to a second zone having a non-active state among the plurality of zones, and
The storage device supports the ZNS (Zoned Namespace) standard of NVM Express. According to claim 18,
receiving a second request indicating the first zone from the host after storing the user data in the first memory block;
setting a state of the first zone to a full state in response to the second request;
allocating the second memory block to the first zone updated to the full state; and
and copying the user data stored in the first memory block to the second memory block. According to claim 18,
receiving a third request indicating the first zone from the host after storing the user data in the first memory block;
setting a state of the first zone to an empty state in response to the third request;
deallocating the first memory block allocated to the first zone; and
and deleting the user data stored in the first memory block.

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