KR20230091923A - 강유전체 디바이스 및 반도체 장치 - Google Patents

강유전체 디바이스 및 반도체 장치 Download PDF

Info

Publication number
KR20230091923A
KR20230091923A KR1020237015842A KR20237015842A KR20230091923A KR 20230091923 A KR20230091923 A KR 20230091923A KR 1020237015842 A KR1020237015842 A KR 1020237015842A KR 20237015842 A KR20237015842 A KR 20237015842A KR 20230091923 A KR20230091923 A KR 20230091923A
Authority
KR
South Korea
Prior art keywords
insulator
oxide
conductor
film
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020237015842A
Other languages
English (en)
Korean (ko)
Inventor
슌페이 야마자키
šœ페이 야마자키
야스히로 진보
토시카즈 오노
유이치 사토
사치에 에토
시노부 카와구치
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20230091923A publication Critical patent/KR20230091923A/ko
Pending legal-status Critical Current

Links

Images

Classifications

    • H01L28/55—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
    • H01G2/10—Housing; Encapsulation
    • H01L29/7869—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
KR1020237015842A 2020-10-20 2021-10-11 강유전체 디바이스 및 반도체 장치 Pending KR20230091923A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020176335 2020-10-20
JPJP-P-2020-176335 2020-10-20
PCT/IB2021/059272 WO2022084795A1 (ja) 2020-10-20 2021-10-11 強誘電体デバイス、および半導体装置

Publications (1)

Publication Number Publication Date
KR20230091923A true KR20230091923A (ko) 2023-06-23

Family

ID=81289710

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237015842A Pending KR20230091923A (ko) 2020-10-20 2021-10-11 강유전체 디바이스 및 반도체 장치

Country Status (5)

Country Link
US (1) US20230389332A1 (https=)
JP (1) JPWO2022084795A1 (https=)
KR (1) KR20230091923A (https=)
CN (1) CN116803231A (https=)
WO (1) WO2022084795A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116056553B (zh) * 2023-01-19 2025-10-28 河北大学 基于氮化铝钪的铁电忆阻器、其制备方法及应用
US20250275209A1 (en) * 2024-02-28 2025-08-28 Tetramem Inc. Deuterium-treated ferroelectric devices and methods for fabricating the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11251535A (ja) * 1998-02-27 1999-09-17 Fujitsu Ltd 半導体装置およびその製造方法
US6635528B2 (en) * 1999-12-22 2003-10-21 Texas Instruments Incorporated Method of planarizing a conductive plug situated under a ferroelectric capacitor
JP4331442B2 (ja) * 2002-06-14 2009-09-16 富士通マイクロエレクトロニクス株式会社 強誘電体キャパシタ及びその製造方法並びに強誘電体メモリ
JP2010251590A (ja) * 2009-04-17 2010-11-04 Seiko Epson Corp 半導体装置とその製造方法
JP5633346B2 (ja) * 2009-12-25 2014-12-03 株式会社リコー 電界効果型トランジスタ、半導体メモリ、表示素子、画像表示装置及びシステム
CN102782858B (zh) * 2009-12-25 2015-10-07 株式会社理光 场效应晶体管、半导体存储器、显示元件、图像显示设备和系统
WO2011142371A1 (en) * 2010-05-14 2011-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2017123388A (ja) * 2016-01-06 2017-07-13 富士通セミコンダクター株式会社 半導体装置及びその製造方法
JP6920192B2 (ja) * 2017-12-28 2021-08-18 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2019160841A (ja) * 2018-03-07 2019-09-19 ソニーセミコンダクタソリューションズ株式会社 半導体記憶装置、半導体記憶装置の製造方法及び電子機器
JP7360004B2 (ja) * 2019-02-01 2023-10-12 富士通セミコンダクターメモリソリューション株式会社 半導体装置の製造方法及び半導体装置

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
Akira TORIUMI, "HfO2 박막의 강유전성", 일본응용물리학회, 제88권, 제9호, 2019
Jun Okuno, et al, "SoC compatible 1T1C FeRAM memory array based on ferroelectric Hf0.5Zr0.5O2", VLSI 2020
T. Francois, et al, "Demonstration of BEOL-compatible ferroelectric Hf0.5Zr0.5O2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications", IEDM 2019
T. S. Boescke, et al, "Ferroelectricity in hafnium oxide thin films", APL 99, 2011
Zhen Fan, et al, "Ferroelectric HfO2-based materials for next-generation ferroelectric memories", JOURNAL OF ADVANCED DIELECTRICS, Vol. 6, No. 2, 2016

Also Published As

Publication number Publication date
JPWO2022084795A1 (https=) 2022-04-28
WO2022084795A1 (ja) 2022-04-28
CN116803231A (zh) 2023-09-22
US20230389332A1 (en) 2023-11-30

Similar Documents

Publication Publication Date Title
US12550332B2 (en) Ferroelectric device and semiconductor device
JP7748373B2 (ja) 半導体装置、半導体装置の作製方法
JP7713464B2 (ja) 強誘電体デバイス、半導体装置
KR20220039740A (ko) 반도체 장치
JP7724321B2 (ja) 半導体装置
TW202310425A (zh) 半導體裝置
WO2019145818A1 (ja) 半導体装置、および半導体装置の作製方法
JPWO2020074999A1 (ja) 半導体装置、および半導体装置の作製方法
KR20220160579A (ko) 반도체 장치 및 반도체 장치의 제작 방법
JPWO2019207429A1 (ja) 半導体装置、および半導体装置の作製方法
JPWO2019162807A1 (ja) 半導体装置、および半導体装置の作製方法
JPWO2019092541A1 (ja) 半導体装置、および半導体装置の作製方法
KR20220020831A (ko) 반도체 장치 및 반도체 장치의 제작 방법
KR20230091923A (ko) 강유전체 디바이스 및 반도체 장치
US12538495B2 (en) Semiconductor device, capacitor, and manufacturing method thereof
CN115917038A (zh) 半导体装置的制造方法
JPWO2020053697A1 (ja) 半導体装置、および半導体装置の作製方法
KR20230052894A (ko) 금속 산화물의 제조 방법
US20260122911A1 (en) Semiconductor device, capacitor, and manufacturing method thereof
TW202301695A (zh) 半導體裝置
KR20230054388A (ko) 반도체 장치 및 그 제작 방법

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20230510

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20241007

Comment text: Request for Examination of Application