KR20230054674A - 실리콘-게르마늄 재료를 선택적으로 에칭하기 위한 조성물, 그의 용도 및 방법 - Google Patents

실리콘-게르마늄 재료를 선택적으로 에칭하기 위한 조성물, 그의 용도 및 방법 Download PDF

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Publication number
KR20230054674A
KR20230054674A KR1020237005999A KR20237005999A KR20230054674A KR 20230054674 A KR20230054674 A KR 20230054674A KR 1020237005999 A KR1020237005999 A KR 1020237005999A KR 20237005999 A KR20237005999 A KR 20237005999A KR 20230054674 A KR20230054674 A KR 20230054674A
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South Korea
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weight
layer
silicon
acid
composition
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KR1020237005999A
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Korean (ko)
Inventor
비야누에바 프란시스코 하비에르 로페스
안드레아스 클리프
자비네 프리쉬후트
치 후이 로
메이 친 선
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바스프 에스이
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H01L21/30604—

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
KR1020237005999A 2020-08-24 2021-08-18 실리콘-게르마늄 재료를 선택적으로 에칭하기 위한 조성물, 그의 용도 및 방법 Pending KR20230054674A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP20192464.4 2020-08-24
EP20192464 2020-08-24
PCT/EP2021/072975 WO2022043165A1 (en) 2020-08-24 2021-08-18 Composition, its use and a process for selectively etching silicon-germanium material

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KR20230054674A true KR20230054674A (ko) 2023-04-25

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KR1020237005999A Pending KR20230054674A (ko) 2020-08-24 2021-08-18 실리콘-게르마늄 재료를 선택적으로 에칭하기 위한 조성물, 그의 용도 및 방법

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Country Link
US (1) US20230326759A1 (https=)
EP (1) EP4200895A1 (https=)
JP (1) JP7754920B2 (https=)
KR (1) KR20230054674A (https=)
CN (1) CN116195036A (https=)
IL (1) IL300758A (https=)
WO (1) WO2022043165A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022008306A1 (en) * 2020-07-09 2022-01-13 Basf Se Composition comprising a siloxane and an alkane for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below
KR20250148723A (ko) * 2023-03-24 2025-10-14 후지필름 가부시키가이샤 처리액, 처리 방법
WO2025064429A1 (en) * 2023-09-22 2025-03-27 Entegris, Inc. Etchant compositions and related methods
WO2026022021A1 (en) 2024-07-25 2026-01-29 Basf Se Composition, its use and a process for selectively etching silicon-germanium layers
WO2026042511A1 (ja) * 2024-08-20 2026-02-26 富士フイルム株式会社 薬液、被処理物の処理方法、半導体デバイスの製造方法
CN119979170B (zh) * 2024-12-13 2026-03-03 湖北兴福电子材料股份有限公司 一种适用于微电子器件从硅锗/硅叠层中相对于硅选择性去除硅锗的组合物

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11186771B2 (en) 2017-06-05 2021-11-30 Versum Materials Us, Llc Etching solution for selectively removing silicon nitride during manufacture of a semiconductor device
US10879076B2 (en) 2017-08-25 2020-12-29 Versum Materials Us, Llc Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/silicon stack during manufacture of a semiconductor device
US10934484B2 (en) 2018-03-09 2021-03-02 Versum Materials Us, Llc Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/ germanium stack during manufacture of a semiconductor device
CN115651656B (zh) 2018-12-03 2024-09-03 富士胶片电子材料美国有限公司 蚀刻组合物
JP7450334B2 (ja) 2018-12-27 2024-03-15 東京応化工業株式会社 エッチング液、及び半導体素子の製造方法

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US20230326759A1 (en) 2023-10-12
JP7754920B2 (ja) 2025-10-15
WO2022043165A1 (en) 2022-03-03
JP2023539238A (ja) 2023-09-13
TW202219323A (zh) 2022-05-16
CN116195036A (zh) 2023-05-30
EP4200895A1 (en) 2023-06-28
IL300758A (en) 2023-04-01

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