KR20210099884A - 인-시투 식각층을 갖는 질화물 반도체 소자 및 그것을 제조하는 방법 - Google Patents
인-시투 식각층을 갖는 질화물 반도체 소자 및 그것을 제조하는 방법 Download PDFInfo
- Publication number
- KR20210099884A KR20210099884A KR1020200013784A KR20200013784A KR20210099884A KR 20210099884 A KR20210099884 A KR 20210099884A KR 1020200013784 A KR1020200013784 A KR 1020200013784A KR 20200013784 A KR20200013784 A KR 20200013784A KR 20210099884 A KR20210099884 A KR 20210099884A
- Authority
- KR
- South Korea
- Prior art keywords
- nitride semiconductor
- semiconductor layer
- type nitride
- interface
- type
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 257
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 249
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000011065 in-situ storage Methods 0.000 title abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 43
- 238000005530 etching Methods 0.000 claims abstract description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 17
- 239000010703 silicon Substances 0.000 claims abstract description 17
- 230000001788 irregular Effects 0.000 claims abstract description 14
- 239000007789 gas Substances 0.000 claims description 60
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 39
- 229910052757 nitrogen Inorganic materials 0.000 claims description 21
- 229910052594 sapphire Inorganic materials 0.000 claims description 7
- 239000010980 sapphire Substances 0.000 claims description 7
- 230000000903 blocking effect Effects 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 218
- 229910002601 GaN Inorganic materials 0.000 description 9
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- -1 InGaN Inorganic materials 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 208000012868 Overgrowth Diseases 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020200013784A KR20210099884A (ko) | 2020-02-05 | 2020-02-05 | 인-시투 식각층을 갖는 질화물 반도체 소자 및 그것을 제조하는 방법 |
| CN202120309052.2U CN214625075U (zh) | 2020-02-05 | 2021-02-02 | 氮化物半导体元件 |
| PCT/KR2021/001342 WO2021157992A1 (fr) | 2020-02-05 | 2021-02-02 | Dispositif semiconducteur à nitrure doté d'une couche gravée in-situ, et procédé de fabrication |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020200013784A KR20210099884A (ko) | 2020-02-05 | 2020-02-05 | 인-시투 식각층을 갖는 질화물 반도체 소자 및 그것을 제조하는 방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20210099884A true KR20210099884A (ko) | 2021-08-13 |
Family
ID=77199400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020200013784A KR20210099884A (ko) | 2020-02-05 | 2020-02-05 | 인-시투 식각층을 갖는 질화물 반도체 소자 및 그것을 제조하는 방법 |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR20210099884A (fr) |
| CN (1) | CN214625075U (fr) |
| WO (1) | WO2021157992A1 (fr) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006313771A (ja) * | 2005-05-06 | 2006-11-16 | Showa Denko Kk | Ｉｉｉ族窒化物半導体素子用エピタキシャル基盤 |
| KR101164026B1 (ko) * | 2007-07-12 | 2012-07-18 | 삼성전자주식회사 | 질화물계 반도체 발광소자 및 그 제조방법 |
| KR20130061306A (ko) * | 2011-12-01 | 2013-06-11 | 서울옵토디바이스주식회사 | 개선된 정전 방전 특성을 갖는 질화물 반도체 소자 및 그 제조 방법 |
| KR102122366B1 (ko) * | 2013-06-14 | 2020-06-12 | 삼성전자주식회사 | 질화물 반도체 박막 제조방법 및 이를 이용한 질화물 반도체 소자 제조방법 |
| KR20180070781A (ko) * | 2016-12-16 | 2018-06-27 | 삼성전자주식회사 | 질화물 반도체 기판의 형성 방법 및 반도체 소자의 제조 방법 |
-
2020
- 2020-02-05 KR KR1020200013784A patent/KR20210099884A/ko unknown
-
2021
- 2021-02-02 WO PCT/KR2021/001342 patent/WO2021157992A1/fr active Application Filing
- 2021-02-02 CN CN202120309052.2U patent/CN214625075U/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN214625075U (zh) | 2021-11-05 |
| WO2021157992A1 (fr) | 2021-08-12 |
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