KR20210043233A - Display device - Google Patents

Abstract

According to an example of the present invention, a display device comprises: a substrate having a plurality of sub-pixels; a first electrode disposed on each of the plurality of sub-pixels; an organic light emitting layer disposed on the first electrode; a second electrode disposed on the organic light emitting layer; and a nanostructure disposed in the remaining sub-pixels except for one sub-pixel among the plurality of sub-pixels, wherein the first electrode disposed on the remaining sub-pixels is installed to cover the nanostructure so as to shorten time for which the organic light emitting layer is exposed by an etching material in an etching process for patterning the organic light emitting layer, thereby minimizing damage to the organic light emitting layer and lowering surface resistance of the first electrode.

Description

Display device {DISPLAY DEVICE}

The present application relates to a display device that displays an image.

As the information society develops, demands for display devices for displaying images are increasing in various forms. Accordingly, in recent years, various display devices such as a liquid crystal display device, a light emitting display device, an organic light emitting display device, a micro light emitting display device, and a quantum dot light emitting display device have been used.

In the organic light-emitting display device, when forming red, green, and blue pixels of the organic light-emitting layer, when using the FMM technology, it is possible to fabricate small and medium-sized panels by using a mask shadow due to the problem of sagging of the deposition mask, but it is difficult to apply a large area. On the other hand, the photo process using a photoresist enables the formation of red, green, and blue fine patterns of the organic light-emitting layer, and is a technology capable of producing a large-area panel compared to FMM. However, there is a problem in that the device characteristics of the light emitting device are deteriorated by a number of coating processes, exposure processes, and etching processes of the photo process. This problem is worsened in the case of a display device requiring ultra-high resolution, such as a head-mounted display.

An object of the present application is to provide a display device capable of preventing deterioration of device characteristics of an organic light emitting layer.

A display device according to an exemplary embodiment of the present application includes a substrate having a plurality of sub-pixels, a first electrode disposed on each of the plurality of sub-pixels, an organic emission layer disposed on the first electrode, and a second electrode disposed on the organic emission layer. , And a nanostructure disposed in the remaining sub-pixels except for one of the plurality of sub-pixels, and the first electrode disposed in the remaining sub-pixels may be provided to cover the nano structure.

In the display device according to the present application, the first electrode is provided to cover the nanostructures disposed in the second sub-pixel and the third sub-pixel excluding the first sub-pixel, so that the organic emission layer is etched in the etching process for patterning the organic emission layer. Since the exposure time to the material can be shortened, damage to the organic light emitting layer can be minimized, and the sheet resistance of the first electrode can be reduced.

In addition to the effects of the present application mentioned above, other features and advantages of the present application will be described below or will be clearly understood by those of ordinary skill in the art from such technology and description.

1 is a schematic cross-sectional view of a display device according to an exemplary embodiment of the present application.
2 is a schematic cross-sectional view of a display device according to another exemplary embodiment of the present application.
3 is a diagram schematically illustrating a first electrode and an organic light emitting layer of FIG. 1.
4A is a schematic enlarged view of part A of FIG. 3.
4B is a schematic enlarged view of part B of FIG. 3.
5A to 5P are schematic cross-sectional views of a manufacturing process of a display device according to an exemplary embodiment of the present application.
6 is a graph showing sheet resistance according to the thickness of the first electrode of FIG. 1.
7A to 7C relate to a display device according to another exemplary embodiment of the present application, which relates to a head mounted display (HMD) device.

Advantages and features of the present application, and a method of achieving them will become apparent with reference to examples described below in detail together with the accompanying drawings. However, the present application is not limited to the examples disclosed below, but will be implemented in a variety of different forms, and only these examples are intended to complete the disclosure of the present application, and to those of ordinary skill in the technical field to which the present application belongs. It is provided to fully inform the scope of the invention, and this application is only defined by the scope of the claims.

The shape, size, ratio, angle, number, etc. disclosed in the drawings for explaining an example of the present application are exemplary, and the present application is not limited to the illustrated matters. The same reference numerals refer to the same elements throughout the specification. In addition, in describing the present application, if it is determined that a detailed description of a related known technology may unnecessarily obscure the subject matter of the present application, the detailed description thereof will be omitted. When'include','have', and'consist of' mentioned in the present application are used, other parts may be added unless'only' is used. In the case of expressing the constituent elements in the singular, it includes the case of including the plural unless specifically stated otherwise.

In interpreting the constituent elements, it is interpreted as including an error range even if there is no explicit description.

In the case of a description of the positional relationship, for example, if the positional relationship of two parts is described as'upper','upper of','lower of','next to','right' Or, unless'direct' is used, one or more other parts may be located between the two parts.

First, second, etc. are used to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish one component from another component. Accordingly, the first component mentioned below may be the second component within the technical idea of the present application.

In describing the constituent elements of the present application, terms such as first and second may be used. These terms are only for distinguishing the component from other components, and the nature, order, order, or number of the component is not limited by the term. When a component is described as being "connected", "coupled" or "connected" to another component, the component may be directly connected or connected to that other component, but other components between each component It should be understood that "interposed" or that each component may be "connected", "coupled" or "connected" through other components.

Each of the features of the various examples of the present application can be partially or completely combined or combined with each other, technically various interlocking and driving are possible, and each of the examples can be implemented independently of each other or can be implemented together in an association relationship. .

Hereinafter, an example of a display device according to the present application will be described in detail with reference to the accompanying drawings. In adding reference numerals to elements of each drawing, the same elements may have the same numerals as possible even if they are indicated on different drawings.

1 is a schematic cross-sectional view of a display device according to an exemplary embodiment of the present application, FIG. 3 is a schematic view showing a first electrode and an organic light emitting layer of FIG. 1, and FIG. 4A is a schematic enlargement of part A of FIG. 3 FIG. 4B is a schematic enlarged view of part B of FIG. 3.

1 and 3 to 4B, the display device 1 according to the exemplary embodiment of the present application includes a substrate 2, a circuit element layer 3, a first electrode 4, and a nanostructure (NS). ), a first bank 5, a second bank 6, an organic light emitting layer 7, a second electrode 8, and an encapsulation layer 9.

The substrate 2 may be a plastic film, a glass substrate, or a semiconductor substrate such as silicon. The substrate 2 may be made of a transparent material or may be made of an opaque material.

A plurality of pixels are provided on the substrate 2. The substrate 2 according to an example may include a first sub-pixel 21, a second sub-pixel 22, and a third sub-pixel 23. The second sub-pixel 22 may be disposed adjacent to one side of the first sub-pixel 21. The third sub-pixel 23 may be disposed adjacent to one side of the second sub-pixel 22. Accordingly, the first sub-pixel 21, the second sub-pixel 22, and the third sub-pixel 23 are sequentially formed on the substrate 2 in a first direction (D1, shown in FIG. 1). Can be placed as The first direction D1 refers to a direction parallel to the upper surface of the substrate 2 and may be a direction from left to right based on FIG. 1.

The first sub-pixel 21 emits red (R) light, the second sub-pixel 22 emits green (G) light, and the third sub-pixel 23 emits blue (B) light. It may be provided to emit light, but is not limited thereto, and may emit light of various colors including white. In addition, the arrangement order of each of the sub-pixels 21, 22, and 23 may be variously changed.

Each of the first sub-pixel 21, the second sub-pixel 22, and the third sub-pixel 23 includes a first electrode 4, an organic emission layer 7, and a second electrode 8 It can be provided so as to.

A nano structure NS may be disposed in the remaining sub-pixels except for one of the first sub-pixel 21, the second sub-pixel 22, and the third sub-pixel 23. The nanostructure NS according to an example may be disposed only in the second sub-pixel 22 and the third sub-pixel 23 except for the first sub-pixel 21.

The nanostructure NS is inevitably formed in the manufacturing process of manufacturing the display device 1 according to the exemplary embodiment of the present application, and is a needle-shaped structure having a nano size. The shape of the nanostructure NS may be formed in various shapes such as a triangle or a semicircle in cross section according to a manufacturing process. The nanostructure NS may be made of one of a material constituting an organic light-emitting layer, a material constituting the shield layer SL, and a material in which a material constituting the organic light-emitting layer and a material constituting the shield layer SL are mixed. .

The nanostructure NS may not be formed in the first sub-pixel 21 according to a manufacturing process to be described later, but may be formed only in the second sub-pixel 22 and the third sub-pixel 23. In addition, the nanostructure NS may be provided as one end in the second sub-pixel 22, and may be provided in two ends in the third sub-pixel 23, and may be covered by the first electrode 4.

The reason why the first electrode 4 covers the nanostructure NS is that the nanostructure NS is disposed on the upper surface of the first electrode 4 by a manufacturing process to be described later. 1 This is because the nanostructure is positioned between the electrode 4 and the organic light emitting layer 7 so that the sub-pixels on which the nanostructure is disposed are unevenly emit light.

Accordingly, the display device 1 according to the exemplary embodiment of the present application includes the first electrode 4 in a plurality of layers to cover the nanostructure NS disposed on the upper surface of the first electrode 4, It may be provided to solve the non-uniform light emission problem such as.

As a result, the first electrode of the sub-pixel on which the nano structure NS is disposed may be thicker than the first electrode of the sub-pixel on which the nano structure NS is not disposed to cover the nano structure NS. A detailed description of this will be described together while explaining the manufacturing process of FIGS. 5A to 5P.

The display device 1 according to the exemplary embodiment of the present application is made in a so-called top emission method in which the emitted light is emitted upward. Therefore, the material of the substrate 2 is not only a transparent material but also an opaque material. One material can be used.

The circuit element layer 3 is provided on one surface of the substrate 2.

In the circuit element layer 3, circuit elements including a plurality of thin film transistors 31, 32, and 33, various signal wires, and capacitors are provided for each of the sub-pixels 21, 22, and 23. The signal wires may include a gate line, a data line, a power line, and a reference line, and the thin film transistors 31, 32, and 33 may include a switching thin film transistor, a driving thin film transistor, and a sensing thin film transistor. have. The sub-pixels 21, 22, and 23 are defined by an intersection structure of gate lines and data lines.

The switching thin film transistor is switched according to a gate signal supplied to the gate line and serves to supply a data voltage supplied from the data line to the driving thin film transistor.

The driving thin film transistor is switched according to a data voltage supplied from the switching thin film transistor to generate a data current from power supplied from the power line and supply it to the first electrode 4.

The sensing thin film transistor serves to sense a threshold voltage deviation of the driving thin film transistor that causes image quality deterioration, and the current of the driving thin film transistor in response to a sensing control signal supplied from the gate line or a separate sensing line. Is supplied to the reference line.

The capacitor serves to maintain a data voltage supplied to the driving thin film transistor for one frame, and is connected to a gate terminal and a source terminal of the driving thin film transistor, respectively.

The first transistor 31, the second transistor 32, and the third transistor 33 are disposed in the circuit element layer 3 for individual sub-pixels 21, 22, and 23. The first transistor 31 according to an example is connected to the first sub-electrode 41 disposed on the first sub-pixel 21 to emit light of a color corresponding to the first sub-pixel 21 Voltage can be applied.

The second transistor 32 according to an example is connected to the second sub-electrode 42 disposed on the second sub-pixel 22 and is driven to emit light of a color corresponding to the second sub-pixel 22 Voltage can be applied.

The third transistor 33 according to an example is connected to the third sub-electrode 43 disposed on the third sub-pixel 23 to emit light of a color corresponding to the third sub-pixel 23 Voltage can be applied.

Each of the first sub-pixel 21, the second sub-pixel 22, and the third sub-pixel 23 according to an example receives a gate signal from a gate line using respective transistors 31, 32, and 33 In this case, a predetermined current is supplied to the organic light emitting layer according to the data voltage of the data line. Accordingly, the organic emission layer of each of the first sub-pixel 21, the second sub-pixel 22, and the third sub-pixel 23 may emit light with a predetermined brightness according to a predetermined current.

The first electrode 4 is formed on the circuit element layer 3. The first electrode 4 according to an example is a laminated structure of aluminum and titanium (Ti/Al/Ti), a laminated structure of aluminum and ITO (ITO/Al/ITO), an APC alloy, and a laminated structure of APC alloy and ITO It may be formed by including a metal material having high reflectivity such as (ITO/APC/ITO). The APC alloy is an alloy of silver (Ag), palladium (Pb), and copper (Cu). The first electrode 4 may be an anode. The first electrode 4 may include a first sub electrode 41, a second sub electrode 42, and a third sub electrode 43.

The first sub-electrode 41 may be provided in the first sub-pixel 21. The first sub-electrode 41 may be formed on the circuit element layer 3. The first sub-electrode 41 is connected to the source electrode of the first transistor 31 through a contact hole penetrating the circuit element layer 3.

The second sub-electrode 42 may be provided in the second sub-pixel 22. The second sub-electrode 42 may be formed on the circuit element layer 3. The second sub-electrode 42 is connected to the source electrode of the second transistor 32 through a contact hole penetrating the circuit element layer 3.

The third sub-electrode 43 may be provided in the third sub-pixel 23. The third sub-electrode 43 may be formed on the circuit element layer 3. The third sub-electrode 43 is connected to the source electrode of the third transistor 33 through a contact hole penetrating the circuit element layer 3.

Here, the first to third transistors 31, 32, and 33 may be N-type TFTs.

If the first to third transistors 31, 32, and 33 are provided as a P-type TFT, each of the first to third sub-electrodes 41, 42, and 43 Each of the transistors 31, 32, and 33 may be connected to the drain electrode.

That is, each of the first to third sub-electrodes 41, 42, and 43 may be connected to a source electrode or a drain electrode according to the type of the first to third transistors 31, 32, and 33.

The display device 1 according to the exemplary embodiment of the present application is formed in a top emission type, and thus, the first to third sub-electrodes 41, 42, and 43 transmit light emitted from the organic emission layer 7. It may include a reflective material for reflecting upward.

In the display device 1 according to the exemplary embodiment of the present application, the first electrode disposed in the remaining sub-pixels except for one sub-pixel may be provided thicker than the first electrode disposed in the one sub-pixel. . Here, one sub-pixel may refer to a first sub-pixel 21, and the remaining sub-pixels may refer to a second sub-pixel 22 and a third sub-pixel 23.

That is, the thickness of the second sub-electrode 42 and the third sub-electrode 43 respectively disposed in the second sub-pixel 22 and the third sub-pixel 23 is disposed in the first sub-pixel 21 It may be provided thicker than the thickness of the first sub-electrode 41. This is because the second sub-electrode 42 and the third sub-electrode 43 cover the nanostructure NS formed in the second sub-pixel 22 and the third sub-pixel 23, respectively.

In addition, in the display device 1 according to the exemplary embodiment of the present application, the first electrode 4 disposed in the remaining sub-pixels, that is, the second sub-electrode 42 and the third sub-electrode 43 are It can be provided in different thicknesses. This is because the nanostructure NS is provided in one end in the second sub-pixel 21 and in two stages in the third sub-pixel 23, so to cover the nanostructures disposed in each sub-pixel, a third sub-electrode This is because the thickness of 43 should be thicker than the thickness of the second sub-electrode 42.

The reason why the nanostructure NS is provided at different ends in the second sub-pixel 22 and the third sub-pixel 23 is that the organic emission layer 7 disposed on the third sub-pixel 23 is the second sub-pixel. This is because it is formed later than the organic light-emitting layer 7 disposed on (22).

In the display device 1 according to the exemplary embodiment of the present application, the first electrode disposed in the remaining sub-pixels may be provided thicker as the distance from one sub-pixel increases. That is, as the distance from the first sub-electrode 41 increases, the thickness of the sub-electrode may be thicker. For example, the thickness of the second sub-electrode 42 adjacent to the first sub-electrode 41 in the first direction D1 is thicker than that of the first sub-electrode 41, and the second sub-electrode 42 and the first direction The thickness of the third sub-electrode 43 adjacent to (D1) may be thicker than that of the second sub-electrode 42.

Meanwhile, the third sub-electrode of the other pixel adjacent to the left side of the first sub-electrode 41 is positioned in the first direction D1 than the second sub-electrode of the other pixel based on FIG. 1. It may be provided thicker than the sub-electrode.

Since the third sub-electrode 43 is provided thicker than the second sub-electrode 42, the nanostructures NS disposed in the second sub-pixel 22 and the third sub-pixel 23 are disposed. Since the two-stage nanostructure NS may be covered by the second sub-electrode 42 and the third sub-electrode 43, respectively, the second sub-pixel 22 and the third sub-pixel 23 are unevenly You can solve the problem of emitting light.

As a result, in the display device 1 according to the exemplary embodiment of the present application, the first sub-electrode 41, the second sub-electrode 42, and the third sub-electrode 43 may have different thicknesses. I can.

1 and 3, the first sub-electrode 41 may be provided on the upper surface of the circuit element layer 3 to have a first thickness T1 (shown in FIG. 1 ). Since the first sub-pixel 21 does not have a nano structure, the first sub-electrode 41 does not need to cover the nano-structure, so that the first thickness T1 of the first sub-electrode 41 is the second sub-electrode ( 42) or may be provided thinner than the thickness of the third sub-electrode 43.

The second sub-electrode 42 may have a double structure to cover the nanostructure NS disposed on the second sub-pixel 22. Hereinafter, the nanostructure NS disposed on the second sub-pixel 22 is referred to as a first nanostructure NS1. The first nanostructure NS1 may be formed on the second sub-pixel 22 when patterning the first organic emission layer 71 disposed on the first sub-pixel 21. The second sub-electrode 42 may be provided with a second thickness T2 that is thicker than the first thickness T1 of the first sub-electrode 41 to cover the first nanostructure NS1.

More specifically, as shown in FIGS. 3 and 4A, the second sub-electrode 42 includes a second lower electrode 421 in contact with a lower portion of the first nanostructure NS1, and the first nanostructure ( It may include a second upper electrode 422 in contact with the rest of the portion other than the lower portion of NS1). Here, the lower surface of the first nanostructure NS1 may be the lower surface of the first nanostructure NS1, but is not limited thereto, and the lower surface of the first nanostructure NS1 and the lower surface of the first nanostructure NS1 It may be the sides arranged in. The remaining portion of the first nanostructure NS1 is a portion that does not contact the second lower electrode 421, and may be side surfaces other than side surfaces disposed below and above the first nanostructure NS1.

Accordingly, the first nanostructure NS1 may be provided to be surrounded by the second lower electrode 421 and the second upper electrode 422, and substantially covering the first nanostructure NS1 is the second upper It may be an electrode 422.

As a result, the second thickness T2 of the second sub-electrode 42 is the thickness of the second lower electrode 421 having the same thickness as the first sub-electrode 41 and the upper surface of the second lower electrode 421 The thickness of the second upper electrode 422 covering the first nanostructure NS1 formed in may be a combined thickness. For example, the second thickness T2 may be about twice the first thickness T1.

Meanwhile, the first nanostructure NS1 may include a first contact hole ACH1. The first contact hole ACH1 (shown in FIG. 4A) is for contacting the second lower electrode 421 and the second upper electrode 422. The first contact hole ACH1 may be formed to have a predetermined width in the first nanostructure NS1 through an additional etching process after patterning the first organic emission layer 71.

When the second upper electrode 422 covers the first nanostructure NS1 due to the first contact hole ACH1 formed in the first nanostructure NS1, a part of the second upper electrode 422 is 1 It may be inserted into the contact hole ACH1. Accordingly, a part of the second upper electrode 422 may contact the upper surface of the second lower electrode 421 through the first contact hole ACH1, so that the second upper electrode 422 is a second lower electrode ( The driving voltage of the second thin film transistor 32 applied to the 421 may be applied together.

As a result, the display device 1 according to the exemplary embodiment of the present application has a dual structure so that the second sub-electrode 42 covers the first nanostructure NS1, so that light is emitted from the second sub-pixel 22. In addition to preventing non-uniform light emission, since it is provided thicker than the first sub-electrode 41, the sheet resistance may be lowered, thereby preventing a decrease in luminous efficiency.

The third sub-electrode 43 may be provided in a triple structure to cover the two-stage nanostructures NS disposed on the third sub-pixel 23, respectively. Hereinafter, the nanostructure NS disposed on the third sub-pixel 23 is referred to as a two-stage nanostructure NS2. The two-stage nanostructure NS2 includes a first nanostructure NS21 and a second subpixel formed in the third sub-pixel 23 when patterning the first organic emission layer 71 in the first sub-pixel 21 When the second organic emission layer 72 is patterned in (22), a second nanostructure NS22 formed in the third sub-pixel 23 may be included. Since the first nanostructure NS21 is formed before the second nanostructure NS22, it may be disposed close to the substrate 2 as shown in FIG. 1. Therefore, the second nanostructure NS22 formed later than the first nanostructure NS21 is disposed closer to the third organic emission layer 73 formed on the third sub-pixel 23 than the first nanostructure NS21. Can be.

As a result, the third sub-electrode 43 has a third thickness that is thicker than the second thickness T2 of the second sub-electrode 42 to cover the first and second nanostructures NS21 and NS22. It may be provided with (T3).

More specifically, the third sub-electrode 43 is a third lower electrode 431 in contact with a lower portion of the first nanostructure NS21 and the first nanostructure NS21, as shown in FIGS. 3 and 4B. ) And the third intermediate electrode 432 in contact with the lower portion of the second nanostructure NS22, and the third upper electrode in contact with the remaining portions except for the lower portion of the second nanostructure NS22 ( 433). Here, the lower surface of the first nanostructure NS21 may be the lower surface of the first nanostructure NS21, but is not limited thereto, and the lower surface of the first nanostructure NS21 and the lower surface of the first nanostructure NS21 It may be the sides arranged in. The remaining portion of the first nanostructure NS21 is a portion that does not contact the third lower electrode 431, and may be side surfaces other than side surfaces disposed below and above the first nanostructure NS21. In addition, the lower portion of the second nanostructure NS22 may be the lower surface of the second nanostructure NS22, but is not limited thereto, and the lower surface of the second nanostructure NS22 and the lower surface of the second nanostructure NS22 It may be the sides arranged in. The remaining portion of the second nanostructure NS22 is a portion that does not contact the third intermediate electrode 432, and may be side surfaces other than side surfaces of the second nanostructure NS22 disposed below and above the second nanostructure NS22.

Accordingly, the first nanostructure NS21 may be provided to be surrounded by the third lower electrode 431 and the third intermediate electrode 432, and substantially covering the first nanostructure NS21 is a third intermediate It may be an electrode 432. In addition, the second nanostructure NS22 may be provided to be surrounded by the third intermediate electrode 432 and the third upper electrode 433, and substantially covering the second nanostructure NS22 is a third upper portion. It may be an electrode 433.

As a result, the third thickness T3 of the third sub-electrode 43 is the thickness of the third lower electrode 431 having the same thickness as the first sub-electrode 41, and the upper surface of the third lower electrode 431 The thickness of the third intermediate electrode 432 covering the first nanostructure NS21 formed on the surface, and the third upper electrode covering the second nanostructure NS22 formed on the upper surface of the third intermediate electrode 432 ( 433) may be a combined thickness. For example, the third thickness T3 may be about three times the first thickness T1.

Meanwhile, referring to FIG. 4B, the first nanostructure NS21 may include a second contact hole ACH2. The second contact hole ACH2 (shown in FIG. 4B) is for contacting the third lower electrode 431 and the third intermediate electrode 432. The second contact hole ACH2 may be formed to have a predetermined width in the first nanostructure NS21 through an additional etching process after patterning the first organic emission layer 71. The second contact hole ACH2 may be formed together when the first contact hole ACH1 is formed.

When the third intermediate electrode 432 covers the first nanostructure NS21 due to the second contact hole ACH2 formed in the first nanostructure NS21, a part of the third intermediate electrode 432 is 2 It may be inserted into the contact hole ACH2. Accordingly, a part of the third intermediate electrode 432 may be in contact with the upper surface of the third lower electrode 431 through the second contact hole ACH2, so that the third intermediate electrode 432 is a third lower electrode ( The driving voltage of the third thin film transistor 33 applied to the 431 may be applied together.

In addition, the second nanostructure NS22 may include a third contact hole ACH3. The third contact hole ACH3 (shown in FIG. 4B) is for contacting the third intermediate electrode 432 and the third upper electrode 433. The third contact hole ACH3 may be formed to have a predetermined width in the second nanostructure NS22 through an additional etching process after patterning the second organic emission layer 72. Accordingly, since the third contact hole ACH3 is formed later than the second contact hole ACH2, it may be disposed above the second contact hole ACH2.

When the third upper electrode 433 covers the second nanostructure NS22 due to the third contact hole ACH3 formed in the second nanostructure NS22, a part of the third upper electrode 433 is 3 It may be inserted into the contact hole ACH3. Accordingly, a part of the third upper electrode 433 may contact the upper surface of the third intermediate electrode 432 through the third contact hole ACH3, so that the third upper electrode 433 is a third intermediate electrode ( The driving voltage of the third thin film transistor 33 applied to the 432 may be applied together.

As a result, the third intermediate electrode 432, which is a part of the third sub-electrode 43, is disposed between the first nanostructure NS21 and the second nanostructure NS22, and the lower side of the third intermediate electrode 432 A third lower electrode 431 may be disposed on the third middle electrode 432, a third upper electrode 433 may be disposed above the third middle electrode 432, and the third lower electrode 431 and the third middle electrode 432 , And the third upper electrode 433 may be connected to each other.

Accordingly, the display device 1 according to the exemplary embodiment of the present application is provided in a triple structure so that the third sub-electrode 43 covers the first nanostructure NS21 and the second nanostructure NS22. In addition to preventing uneven emission of light from the pixel 23, it is possible to prevent a decrease in luminous efficiency by lowering the sheet resistance by being provided thicker than the second sub-electrode 42.

Meanwhile, referring to FIG. 3, the third contact hole ACH3 may be disposed in a straight line with the second contact hole ACH2. For example, the straight line may mean a straight line perpendicular to the substrate 2. Accordingly, the second contact hole ACH2 and the third contact hole ACH3 may be positioned on a straight line in the vertical direction with reference to FIG. 3.

The second contact hole ACH2 and the third contact hole ACH3 may be formed through a mask, respectively, and the second contact hole ACH2 and the third contact hole ACH3 are at the same position in the vertical direction as described above. When positioned at, the opening position of the mask for forming the third contact hole ACH3 is the same as the opening position of the mask for forming the second contact hole ACH2, so that the mask manufacturing time can be shortened. The overall manufacturing process time of 1) can be shortened.

In the display device 1 according to the exemplary embodiment of the present application, a width of each of the first contact hole ACH1, the second contact hole ACH2, and the third contact hole ACH3 is about 2.5 μm or more. Can be. When the width of each of the first contact hole ACH1, the second contact hole ACH2, and the third contact hole ACH3 is less than 2.5 μm, the organic emission layer or the organic emission layer and the shield layer SL positioned in the contact hole are There is a problem in that it is difficult to form a contact hole because the mixed material of is not completely removed. Accordingly, the display device 1 according to the exemplary embodiment of the present application has a width of 2.5 μm or more of each of the first contact hole ACH1, the second contact hole ACH2, and the third contact hole ACH3. As a result, it may be provided so that the electrode located at the top and the electrode located at the bottom contact easily. However, even in this case, it is natural that the widths of each of the first contact hole ACH1, the second contact hole ACH2, and the third contact hole ACH3 should be smaller than the width of the nanostructure NS. Here, the width of the nanostructure NS may mean the width of the entire area in which the plurality of nanostructures are disposed, not one of the plurality of nanostructures. For example, in FIG. 3, the width of the nanostructure NS disposed on the second sub-pixel 22 refers to the width of the entire area in which the plurality of first nanostructures NS1 are disposed. This is because if the width of the contact holes is larger than the width of the nano structure NS, there is no need to separately provide an electrode for covering the nano structure NS.

Meanwhile, when the display device 1 according to the exemplary embodiment of the present application is implemented using microcavity characteristics, the thicknesses of each of the first to third sub-electrodes 41, 42, and 43 are Since they are different, there is an advantage in that a micro-cavity structure can be more easily implemented than a general case in which the thickness of the first electrode is provided differently by using a separate transparent electrode or the like in order to realize the micro-cavity characteristics.

The micro-cavity characteristic is that the distance between the reflective electrode of the first electrode 4 and the second electrode 8 is equal to the half wavelength (λ/2) of light emitted from each sub-pixel (21, 22, 23). When it becomes an integer multiple, constructive interference occurs and light is amplified, and when the above reflection and re-reflection processes are repeated, the degree of light amplification increases continuously, thereby improving the external extraction efficiency of light. When the display device is implemented to have micro-cavity characteristics, the second electrode 8 may include a translucent electrode.

Referring back to FIG. 1, the first bank 5 is provided between the first sub-electrode 41 and the second sub-electrode 42. The first bank 5 according to an example is for separating the first sub-pixel 21 from the second sub-pixel 22. The first bank 5 is provided to cover the edges of each of the first sub-electrode 41 and the second sub-electrode 42, thereby distinguishing the first sub-pixel 21 and the second sub-pixel 22 from each other. I can.

More specifically, the first bank 5 has an edge of the first sub-electrode 41 of the first sub-pixel 21 and an edge of the second lower electrode 421 of the second sub-pixel 22. Can be covered. Since the second upper electrode 422 of the second sub-pixel 22 is formed later than the first bank 5, the edge may not be covered by the first bank 5. Therefore, the lower surface of the first bank 5 may be in contact with one of the upper edge and side surfaces of the first sub-electrode 41 and the upper edge and side surfaces of the second lower electrode 421. I can.

The first bank 5 serves to define a sub-pixel, that is, a light emitting part. Also, since the region in which the first bank 5 is formed does not emit light, it may be defined as a non-emission portion. The first bank 5 is formed of an organic film such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin. I can. An organic light emitting layer 7 is formed on the first electrode 4 and the first bank 5.

Referring to FIG. 1, the first bank 5 may include an upper surface 51 and an inclined surface. The inclined surface may include a first inclined surface and a second inclined surface.

The upper surface 51 of the first bank 5 is a surface positioned above the first bank 5.

The first inclined surface of the first bank 5 is a surface extending from the upper surface 51 to the upper surface of the first sub-electrode 41. Accordingly, the first inclined surface and the upper surface of the first sub-electrode 41 may form a predetermined angle. The predetermined angle may be 50° or more and less than 90° because the width of the bank is narrowed as the display device is implemented with high resolution. The width of the bank may be narrowed as the spacing between the sub-pixels is narrowed.

The second inclined surface of the first bank 5 is a surface extending from the upper surface 51 to the upper surface of the second lower electrode 421. Accordingly, the second inclined surface and the upper surface of the second lower electrode 421 may form a predetermined angle. An angle formed between the second inclined surface and the upper surface of the second lower electrode 421 may be the same as an angle formed between the first inclined surface and the upper surface of the first sub-electrode 41.

Referring to FIG. 1, the second bank 6 is provided between the second sub electrode 42 and the third sub electrode 43. The second bank 6 according to an example is provided to cover the edges of each of the second sub-electrode 42 and the third sub-electrode 43, so that the second sub-pixel 22 and the third sub-pixel 23 Can be distinguished.

More specifically, the second bank 6 has an edge of the second lower electrode 421 of the second sub-pixel 22 and an edge of the third lower electrode 431 of the third sub-pixel 23. Can be covered. The second upper electrode 422 of the second sub-pixel 22 and the third intermediate electrode 432 and the third upper electrode 433 of the third sub-pixel 23 are the second bank 6 Since it is formed later, the edge may not be covered by the second bank 6. Accordingly, the lower surface of the second bank 6 may be in contact with one of the upper edge and side surfaces of the second lower electrode 421 and one of the upper edge and side surfaces of the third lower electrode 431. I can.

The second bank 6 serves to define a sub-pixel, that is, a light emitting part. In addition, since the area in which the second bank 6 is formed does not emit light, it may be defined as a non-emission portion. The second bank 6 may be formed of the same material as the first bank 5. An organic light emitting layer 7 is formed on the first electrode 4 and the second bank 6.

The second bank 6 may include an upper surface 61 and an inclined surface. The inclined surface may include a first inclined surface and a second inclined surface.

The upper surface 61 of the second bank 6 is a surface positioned above the second bank 6.

The first inclined surface of the second bank 6 is a surface extending from the upper surface 61 to the upper surface of the second lower electrode 421. Accordingly, the first inclined surface and the upper surface of the second lower electrode 421 may form a predetermined angle. The predetermined angle may be 50° or more and less than 90° because the width of the bank is narrowed as the display device is implemented with high resolution.

The second inclined surface of the second bank 6 is a surface extending from the upper surface 61 to the upper surface of the third lower electrode 431. Accordingly, the second inclined surface and the upper surface of the third lower electrode 431 may form a predetermined angle. An angle formed between the second inclined surface and the upper surface of the third lower electrode 431 may be the same as an angle formed between the first inclined surface and the upper surface of the second lower electrode 421.

The organic light emitting layer 7 is disposed on the first electrode 4. The organic light emitting layer 7 according to an example includes a hole transporting layer (HTL), a light emitting layer (EML), a hole blocking layer (HBL), and an electron transporting layer (ETL). It may include. The organic light emitting layer 7 may further include a hole injecting layer (HIL), an electron blocking layer (EBL), and an electron injecting layer (EIL).

The hole injection layer (HIL), the hole transport layer (HTL), the electron transport layer (ETL), and the electron injection layer (EIL) of the organic light emitting layer 7 are used to improve the luminous efficiency of the emission layer (EML), and the hole transport layer (HTL) ) And the electron transport layer (ETL) are for balancing electrons and holes, and the hole injection layer (HIL) and the electron injection layer (EIL) are for enhancing the injection of electrons and holes.

More specifically, the hole injection layer HIL may facilitate hole injection by lowering an injection energy barrier of holes injected from the cathode material. The hole transport layer HTL serves to transport holes injected from the anode to the light emitting layer without loss.

The emission layer (EML) is a layer that emits light through recombination of holes injected from the anode and electrons injected from the cathode, and can emit red, blue, and green light depending on the binding energy in the emission layer. It may be configured to form a white light-emitting layer. The hole blocking layer HBL is provided between the emission layer EML and the electron transport layer ETL and serves to suppress the movement of holes that cannot be combined with electrons in the emission layer EML. The electron blocking layer (EBL) is provided between the emission layer (EML) and the hole transport layer (HTL), and plays a role of confining electrons in the emission layer (EML) to prevent electrons from moving from the emission layer (EML) to the hole transport layer (HTL). .

The electron transport layer ETL serves to transport electrons injected from the cathode to the emission layer. The electron injection layer (EIL) serves to facilitate injection of electrons from the cathode by lowering the potential barrier during electron injection.

When a high potential voltage is applied to the first electrode 4 and a low potential voltage is applied to the second electrode 8, holes and electrons are moved to the emission layer through the hole transport layer and the electron transport layer, respectively, and are combined with each other in the emission layer to emit light. do.

The organic emission layer 7 may include a first organic emission layer 71, a second organic emission layer 72, and a third organic emission layer 73. The first organic emission layer 71, the second organic emission layer 72, and the third organic emission layer 73 may be provided in one pixel. Here, one pixel may mean a pixel capable of implementing white light by combining red light, green light, and blue light, but is not limited thereto.

Each of the first to third organic light emitting layers 71, 72, and 73 may include a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, a hole blocking layer, an electron transport layer, and an electron injection layer, as described above. .

The first organic emission layer 71 may be disposed on the first sub-electrode 41. The first organic emission layer 71 may be formed on the first sub-electrode 41 after the first electrode 4, the first bank 5, and the second bank 6 are formed.

Since the first organic light-emitting layer 71 is disposed on the upper surface of the first sub-electrode 41 having a first thickness T1, the first organic light-emitting layer 71 is a circuit element layer ( It may be located at a first position P1 spaced from 3) by a predetermined distance in the upward direction.

The second organic emission layer 72 may be disposed on the second sub-electrode 42. The second organic emission layer 72 is similar to the first organic emission layer 71, after the first electrode 4, the first bank 5, and the second bank 6 are formed, the second sub-electrode 42 ) Can be formed on. More specifically, the second organic emission layer 72 may be disposed on an upper surface of the second upper electrode 422 of the second sub-electrode 42.

Since the second organic light-emitting layer 72 is disposed on the upper surface of the second sub-electrode 42 having a second thickness T2, the second organic light-emitting layer 72 is a circuit element layer ( It may be located in a second position P2 spaced apart from the first position P1 in an upward direction from 3).

The third organic emission layer 73 may be disposed on the third sub-electrode 43. The third organic emission layer 73 has a first electrode 4, a first bank 5, and a second bank 6 formed in the same manner as the first organic emission layer 71 and the second organic emission layer 72. Later, it may be formed on the third sub-electrode 43. More specifically, the third organic emission layer 73 may be disposed on an upper surface of the third upper electrode 433 of the third sub-electrode 43.

Since the third organic light-emitting layer 73 is disposed on the upper surface of the third sub-electrode 43 having a third thickness T3, as shown in FIG. 3, the third organic light-emitting layer 73 is a circuit element layer ( It may be located at a third position P3 spaced apart from the second position P2 in an upward direction from 3).

Referring to FIG. 3, the second position P2 may be a higher position than the first position P1, and the third position P3 may be a higher position than the second position P2. have.

In summary, in the display device 1 according to the exemplary embodiment of the present application, the organic emission layers 7 disposed on each of the plurality of sub-pixels are disposed at different heights, and the remaining sub-pixels except for one sub-pixel The organic emission layer disposed in may be disposed at a higher position as the distance from one sub-pixel increases.

More specifically, the red first organic emission layer 71 disposed on the first sub-pixel 21 is disposed at the first position P1, and the green second light-emitting layer 71 disposed at the second sub-pixel 22 The organic emission layer 72 is disposed at a second position P2 higher than the first position P1, and the blue third organic emission layer 73 disposed at the third sub-pixel 23 is disposed at a second position P2. ) May be disposed in the third position P3 higher than ). That is, toward the first direction D1, the first to third organic light emitting layers 71, 72, and 73 may be sequentially disposed at higher positions. Accordingly, when one pixel as shown in FIG. 1 is disposed adjacent to the left and right sides of the pixel of FIG. 1, the third sub-pixel of another adjacent pixel disposed on the left side of the first sub-pixel 21 3 Since the organic emission layer is not in the first direction D1 with respect to the first organic emission layer 71, the organic emission layer may be disposed at a third position.

Meanwhile, each of the first organic emission layer 71, the second organic emission layer 72, and the third organic emission layer 73 emits red (R) light, green (G) light, and blue (B) light. When provided to emit light, an arrangement order of the first to third organic emission layers 71, 72 and 73 with respect to the first sub-electrodes 41, 42, and 43 may be variously combined. Each of the first organic emission layer 71, the second organic emission layer 72, and the third organic emission layer 73 emit red (R) light, green (G) light, and blue (B) light. Accordingly, since the display device 1 according to the exemplary embodiment of the present application may not use a color filter, it may have an effect of reducing manufacturing cost compared to the case of using a color filter.

Referring back to FIG. 1, in the display device 1 according to the exemplary embodiment of the present application, the first organic emission layer 71 and the second organic emission layer 72 are patterned and formed for each corresponding sub-pixel, The third organic emission layer 73 is not patterned by the etching process, and is formed between the first sub-pixel 21 and the second sub-pixel 22, as well as the third sub-pixel 23, and between the second sub-pixel 22 and the second sub-pixel 22. It may also be disposed between the third sub-pixels 23.

That is, the third organic emission layer 73 may be disposed not only on the third sub-pixel 23, but also on the top surface 51 of the first bank 5 and the top surface 61 of the second bank 6.

The reason why the third organic emission layer 73 can have the above-described arrangement structure is patterning for disposing the third organic emission layer 73 only on the third sub-pixel 23 when the third organic emission layer 73 is formed. This is because the process is omitted, and this is because the first organic emission layer 71 and the second organic emission layer 72 formed before the third organic emission layer 73 are used in the etching material used in the patterning process of the third organic emission layer 73. This is to prevent the third organic light emitting layer 73 from being damaged by the etching material while preventing damage by the etching material. A detailed description of this will be described together while explaining the manufacturing process to be described later.

Accordingly, the display device 1 according to the exemplary embodiment of the present application can reduce the number of manufacturing processes compared to the case of patterning up to the third organic emission layer, thereby reducing the tact time until completion of the display device. Compared to the case where the patterning process of the third organic emission layer is performed, it is possible to prevent damage to the previously formed first organic emission layer 71 and the second organic emission layer 73 by the patterning process of the third organic emission layer 73. Damage to the first to third organic light emitting layers 71, 72, and 73 may be prevented.

Meanwhile, the second electrode 8 is disposed on the organic light emitting layer 7. The second electrode 8 according to an exemplary embodiment is a common layer formed in common with the first sub-pixel 21, the second sub-pixel 22, and the third sub-pixel 23. The second electrode 8 is a transparent metallic material such as ITO or IZO that can transmit light, or magnesium (Mg), silver (Ag), or magnesium (Mg) and silver (ag). It may be formed of a semi-transmissive conductive material such as an alloy of.

The second electrode 2 is disposed on the first to third organic emission layers 71, 72 and 73, and the first to third organic emission layers 71, 72 and 73 are in a first direction D1 As the second electrode 8 is sequentially positioned at a higher position as it goes toward, the second electrode 8 may be sequentially disposed at a higher position toward the first direction D1. Accordingly, the display device 1 according to the exemplary embodiment of the present application may easily implement micro-cavity characteristics for each of the first to third sub-pixels 21, 22, and 23.

For example, when the first sub-electrode 41, the second lower electrode 421, and the third sub-electrode 431 are provided as reflective electrodes based on FIG. 1, the first to third sub-pixels 21 and 22 , 23) the second electrode 8 and the first sub-electrode 41, the second electrode 8 and the second lower electrode 421, and the second electrode 8 and the third sub-electrode ( Since the distance 431) becomes farther apart, micro-cavity characteristics can be easily implemented. However, in this case, the third sub-pixel 23 having the farthest distance apart is provided to emit red light, and the second sub-pixel 22 having a smaller separation distance than the third sub-pixel 23 emits green light. The first sub-pixel 21 provided to emit light and having a spacing distance smaller than that of the second sub-pixel 22 may be provided to emit blue light.

When the display device 1 according to the exemplary embodiment of the present application is implemented to have micro-cavity characteristics as described above, the display device 1 according to the exemplary embodiment of the present application is uneven due to the nanostructure NS. While solving the light emission problem, it is possible to improve the light efficiency by using the micro-cavity characteristics.

Referring back to FIG. 1, an encapsulation layer 9 may be formed on the second electrode 8. The encapsulation layer 9 serves to prevent the penetration of oxygen or moisture into the organic light emitting layer 7 and the second electrode 8. To this end, the encapsulation layer 9 may include at least one inorganic film and at least one organic film.

For example, the encapsulation layer 9 may include a first inorganic layer, an organic layer, and a second inorganic layer. In this case, the first inorganic film is formed to cover the second electrode 8. The organic layer is formed to cover the first inorganic layer. The organic layer is preferably formed to have a sufficient length to prevent particles from penetrating the first inorganic layer and being introduced into the organic light emitting layer 7 and the second electrode 8. The second inorganic layer is formed to cover the organic layer.

2 is a schematic cross-sectional view of a display device according to another exemplary embodiment of the present application.

Referring to FIG. 2, the display device 1 according to another exemplary embodiment of the present application includes a first contact hole ACH1, a second contact hole ACH2, and a third contact hole ACH3. It is the same as the display device of FIG. 1 described above. Accordingly, the same reference numerals are assigned to the same configuration, and only different configurations will be described below.

In the case of the display device of FIG. 1 described above, a first contact hole ACH1 is provided to reliably contact the second lower electrode 421 and the second upper electrode 422. In addition, a second contact hole ACH2 is provided to reliably contact the third lower electrode 431 and the third intermediate electrode 432, and the third intermediate electrode 432 and the third upper electrode 433 are provided. A third contact hole ACH3 is provided to ensure contact.

In contrast, in the case of the display device according to another exemplary embodiment of FIG. 2, the first contact hole ACH1, the second contact hole ACH2, and the third contact hole ACH3 are not provided. The reason why the first contact hole ACH1, the second contact hole ACH2, and the third contact hole ACH3 are not provided in the display device according to FIG. 2 is Even if the hole ACH2 and the third contact hole ACH3 are not provided, an electrode covering the nanostructures NS1, NS21, and NS22 may be disposed between the plurality of nanostructures NS1, NS21, and NS22. This is because the electrode disposed on the side may be in contact with the electrode covering the nanostructures NS1, NS21, and NS22.

More specifically, as shown in FIG. 2, even if the first contact hole ACH1 is not present, the second upper electrode 422 may be disposed between the plurality of first nanostructures NS1, so that the second lower electrode 421 and The second upper electrode 423 may be in contact. Accordingly, the second upper electrode 423 may receive the driving voltage of the second thin film transistor 32 applied to the second lower electrode 421.

Likewise, since the third intermediate electrode 432 may be disposed between the plurality of first nanostructures NS21 even without the second contact hole ACH2, the third lower electrode 431 and the second intermediate electrode 432 Can be contacted. In addition, since the third upper electrode 433 may be disposed between the plurality of second nanostructures NS22 even without the third contact hole ACH3, the third intermediate electrode 432 and the third upper electrode 433 Can be contacted. Accordingly, the third intermediate electrode 432 can receive the driving voltage of the third thin film transistor 33 applied to the third lower electrode 431, and the third upper electrode 433 is the third intermediate electrode 432. A driving voltage of the third thin film transistor 33 applied as) may be applied.

As a result, the display device 1 according to another exemplary embodiment of the present application has a second sub-electrode even if the first contact hole ACH1, the second contact hole ACH2, and the third contact hole ACH3 are not provided. An electric field may be formed between the 42 and the second electrode 8 and the third sub-electrode 43 and the second electrode 8, the first contact hole ACH1, the second contact hole ACH2, and And since the third contact hole ACH3 is not provided, the manufacturing process for forming the first to third contact holes ACH1, ACH2, ACH3 can be omitted compared to the display device according to FIG. It can have the effect of reducing the manufacturing time.

5A to 5P are schematic cross-sectional views of a manufacturing process of a display device according to an exemplary embodiment of the present application. The display device 1 according to the exemplary embodiment of the present application may lower the sheet resistance while covering the nanostructure NS formed in the second sub-pixel 22 and the third sub-pixel 23 through the following manufacturing process. , A portion Q of the third organic emission layer 73 may be disposed between the first sub-pixel 21, the second sub-pixel 22, and the third sub-pixel 23, respectively. In this case, a portion Q of the third organic emission layer 73 may be simultaneously disposed on the upper surface of the bank adjacent to the second bank 6.

That is, when the manufacturing process of the display device according to the exemplary embodiment of the present application is used, the second sub-electrode 42 is formed to cover the first nanostructure NS1 formed in the second sub-pixel 22. According to an exemplary embodiment of the present application, the third sub-electrode 43 is formed to have a thickness T2 and has a third thickness T3 so as to cover the two-stage nanostructure NS2 formed in the third sub-pixel 23. The display device 1 can be manufactured.

In addition, when the manufacturing process of the display device according to the exemplary embodiment of the present application is used, the patterning process of the third organic light emitting layer 73 can be omitted, so that the number of manufacturing processes can be reduced, and the manufacturing process in which the number of processes is reduced as described above. An implementation of the present application in which a part (Q) of the third organic emission layer 73 is disposed between each of the first sub-pixel 21, the second sub-pixel 22, and the third sub-pixel 23 through The display device 1 according to the example may be manufactured.

5A and 5B, in a state in which the first electrode 4, the first bank 5, and the second bank 6 are formed on the substrate 2 and the circuit element layer 3, The first organic emission layer 71 is sequentially deposited over the first to third sub-pixels 21, 22, and 23. Here, the first electrode 4 may be a first sub-electrode 41, a second lower electrode 421, and a third lower electrode 431.

Next, referring to FIG. 5C, a shield layer SL and a PR layer are sequentially coated on the upper surface of the first organic emission layer 71. Since the shield layer SL and the PR layer are liquid materials, this process may include a baking process in which the shield layer SL and the PR layer are completely deposited and then dried using a heating device.

In addition, when the baking process is completed, the first organic emission layer 71 is located at the first sub-pixel 21, the position where the first contact hole ACH1 is to be formed in the second sub-pixel 22, and the third sub-pixel ( In 23), the first mask M1 is positioned so that the opening is positioned where the first organic emission layer 71 is to be patterned so that the second contact hole ACH2 is disposed only at the location where the second contact hole ACH2 is to be formed, It is exposed to light such as ultraviolet (UV) light. Accordingly, a region in the PR layer where the first organic emission layer 71 is to be patterned may be changed in characteristics so that it is not etched by a developer.

Next, referring to FIG. 5D, when the first removal process of removing the PR layer using the developer is performed, the first sub-pixel 21, the position where the first contact hole ACH1 is to be formed, and the second contact The PR layer remains without being etched only on the location where the hole ACH2 is to be formed. The PR layer may be a photoresist layer.

Next, referring to FIG. 5E, in order to pattern the first organic emission layer 71, the first sub-pixel 21, the position where the first contact hole ACH1 is to be formed, and the second contact hole ACH2 are formed. A second removal process is performed in which the shield layer SL and the first organic emission layer 71 disposed on the remaining sub-pixels 22 and 23 are etched using an etching gas. In the second removal process, the first organic light-emitting layer 71 including the shield layer SL may be removed by increasing the exposure time to the etching gas compared to the first removal process. In this case, the exposure time to the etching gas may be adjusted within a range in which the shield layer SL partially remains on the upper surface of the first organic emission layer 71. Accordingly, as shown in FIG. 5E, the first organic emission layer 71 deposited over the first to third sub-pixels 21, 22, and 23 is the first sub-pixel 21 and the first contact hole. It may be patterned to remain only on the position where the (ACH1) is to be formed and the position where the second contact hole ACH2 is to be formed. In addition, some of the shield layers SL include the first organic emission layer 71 of the first sub-pixel 21, the first organic emission layer 71 disposed at a position where the first contact hole ACH1 is to be formed, and the first organic emission layer 71 2 It may be disposed to cover an upper surface of each of the first organic emission layers 71 disposed at a location where the contact hole ACH2 is to be formed.

Meanwhile, as shown in FIG. 5E, the first organic light emitting layer 71 and the shield layer SL are not completely removed by the etching gas used in the secondary removal process, and the second sub-pixel 22 and the third The nano structure NS may remain in the sub-pixel 23.

The nanostructures NS left in the second sub-pixel 22 and the third sub-pixel 23 can be completely removed by sufficiently increasing the second removal process time, but if so, the first sub-pixel 21 is patterned. The patterned first organic emission layer 71, the first bank 5, and the second bank 6 may be damaged. The secondary removal process may be performed within a range in which the bank 6 is not damaged.

Accordingly, the nanostructure NS remaining in the second sub-pixel 22 and the nanostructure NS remaining in the third sub-pixel 23 are formed by patterning the first organic emission layer 71 on the first sub-pixel 21. It can be formed in the process. The nanostructure NS may be formed of only the first organic emission layer 71, but is not limited thereto, and may be formed by mixing the first organic emission layer 71 and the shield layer SL with an etching gas.

The nanostructure NS left in the second sub-pixel 22 is the first nanostructure NS1, and the nanostructure NS left in the third sub-pixel 23 is the first of the two-stage nanostructure NS2. It may be a nano structure (NS21).

Next, referring to FIG. 5F, a first organic light-emitting layer 71 disposed at a location where the first contact hole ACH1 is to be formed using a developer and a shield layer SL disposed on the upper surface of the first organic light-emitting layer 71 ), and a third removal process of removing the first organic emission layer 71 disposed at the position where the second contact hole ACH2 is to be formed and the shield layer SL disposed on the upper surface of the first organic emission layer 71 Carry out. Accordingly, as shown in FIG. 5F, a first contact hole ACH1 having a predetermined width may be formed between the first nanostructures NS1 in the second sub-pixel 22, and the third sub-pixel 23 A second contact hole ACH2 having the same width as the first contact hole ACH1 may be formed between the 1 nanostructure NS21. In this case, a part of the upper portion of the shield layer SL disposed on the first organic emission layer 71 of the first sub-pixel 21 may also be removed by a developer. Accordingly, the thickness of the shield layer SL of FIG. 5F may be thinner than the thickness of the shield layer SL of FIG. 5E.

Next, referring to FIG. 5G, a second upper electrode 422 is formed to cover the first nanostructure NS1 of the second sub-pixel 22, and the first nanostructure of the third sub-pixel 23 ( A third intermediate electrode 432 is formed to cover the NS21). The second upper electrode 422 and the third intermediate electrode 432 are formed using a mask having openings formed at positions of the second sub-pixel 22 and the third sub-pixel 23. 3 Either deposited and formed only on the sub-pixels 23, or deposited on the first to third sub-pixels 21, 22, and 23, and then patterned and formed only on the second and third sub-pixels 22 and 23 Can be.

In this case, the second upper electrode 422 may also be formed between the first nanostructures NS1 to contact the upper surface of the second lower electrode 421, but the second upper electrode 422 may be formed through the first contact hole ACH1. The upper surface of the lower electrode 421 may be more reliably contacted.

Likewise, the third intermediate electrode 432 may be formed between the first nanostructures NS21 to contact the upper surface of the third lower electrode 431, but the third lower electrode 432 is formed through the second contact hole ACH2. The upper surface of the electrode 431 may be more reliably contacted.

Next, referring to FIG. 5H, the second organic emission layer 72 is sequentially deposited over the first to third sub-pixels 21, 22, and 23. In this case, the second organic emission layer 72 may have the same thickness as the first organic emission layer 71.

Next, referring to FIG. 5I, a shield layer SL and a PR layer are sequentially coated on the upper surface of the second organic emission layer 72. Since the shield layer SL and the PR layer are liquid materials, this process may include a baking process in which the shield layer SL and the PR layer are completely deposited and then dried using a heating device.

In addition, when the baking process is completed, the second organic emission layer 72 is disposed only at the position where the third contact hole ACH3 is formed in the second sub-pixel 22 and the third sub-pixel 23. After the second mask M2 is positioned so that the opening is positioned at the place where the light emitting layer 72 is to be patterned, the portion to be patterned is exposed to light such as ultraviolet rays (UV) through the opening. Accordingly, a region in the PR layer where the second organic emission layer 72 is to be patterned may be changed in characteristics so that it is not etched by a developer.

Next, referring to FIG. 5J, when a fourth removal process of removing the PR layer using the developer is performed, the PR layer is formed only on the positions where the second sub-pixel 21 and the third contact hole ACH3 are to be formed. It remains without being etched. The PR layer may be a photoresist layer.

Next, referring to FIG. 5K, in order to pattern the second organic emission layer 72, the remaining sub-pixels 21 and 23 except for the location where the second sub-pixel 22 and the third contact hole ACH3 are to be formed. A fifth removal process is performed in which the shield layer SL and the second organic light emitting layer 72 disposed in are etched using an etching gas. In the fifth removal process, the second organic light emitting layer 72 including the shield layer SL may be removed by increasing the exposure time to the etching gas compared to the fourth removal process. In this case, the exposure time to the etching gas may be adjusted within a range in which the shield layer SL partially remains on the upper surface of the second organic emission layer 72 of the second sub-pixel 22. Accordingly, as shown in FIG. 5K, the second organic emission layer 72 deposited over the first to third sub-pixels 21, 22, and 23 is the second sub-pixel 22 and the third contact It may be patterned to remain only on the position where the hole ACH3 is to be formed. In addition, some of the shielding layers SL include the second organic emission layer 72 of the second sub-pixel 22 and the second organic emission layer 72 disposed at a position where the third contact hole ACH3 is to be formed. It can be arranged to cover the upper surface.

As a result, as shown in FIG. 5K, the shield layer SL includes the first organic emission layer 71 of the first sub-pixel 21, the second organic emission layer 72 of the second sub-pixel 22, and They may be respectively disposed on the second organic emission layer 72 of the third sub-pixel 23. In addition, the height of the shield layers SL disposed in FIG. 5K is the height of the shield layer SL in the position where the PR layer is not disposed compared to the height of the shield layer SL in the position where the PR layer is disposed in FIG. 5J. Can be formed lower. This is because the PR layer serves to protect the shield layer SL disposed under it from the etching gas.

Meanwhile, as shown in FIG. 5K, the second organic light emitting layer 72 and the shield layer SL are not completely removed from the third sub-pixel 23 by the etching gas used in the fifth removal process, and the nanostructure ( NS) may remain.

The nanostructure NS left in the third sub-pixel 23 can be completely removed if the fifth removal process time is sufficiently increased, but if so, the first organic light-emitting layer 71 patterned on the first sub-pixel 21 , Since the second organic emission layer 72, the first bank 5, and the second bank 6 of the second sub-pixel 22 may be damaged, the patterned first organic emission layer 71 and the second The fifth removal process may be performed within a range in which the organic emission layer 72, the first bank 5, and the second bank 6 are not damaged.

In the third sub-pixel 23, the nanostructure NS left on the first nanostructure NS21 is the second nanostructure NS22, and the second nanostructure NS22 is the second nanostructure NS22. 2 It may be formed in the process of patterning the organic emission layer 72. The second nanostructure NS22 may be formed of only the second organic emission layer 72, but is not limited thereto, and may be formed by mixing the second organic emission layer 72 and the shield layer SL with an etching gas.

Meanwhile, since the second nanostructure NS22 is formed later than the first nanostructure NS21, it may be disposed above the first nanostructure NS21.

Next, referring to FIG. 5L, a second organic light-emitting layer 72 disposed at a location where the third contact hole ACH3 is to be formed using a developer and a shield layer SL disposed on the upper surface of the second organic light-emitting layer 72 ) And perform the 6th removal process. Accordingly, a third contact hole ACH3 having the same width as the second contact hole ACH2 may be formed between the second nanostructures NS21 as shown in FIG. 5L. In this case, a shield layer SL disposed on the first organic emission layer 71 of the first sub-pixel 21 and a shield layer disposed on the second organic emission layer 72 of the second sub-pixel 22 A part of the upper part of the (SL) may be removed by the developer. Accordingly, the thickness of the shield layer SL of FIG. 5L may be thinner than the thickness of the shield layer SL of FIG. 5K.

Next, referring to FIG. 5M, a third upper electrode 433 is formed to cover the second nanostructure NS22 of the third sub-pixel 23. The third upper electrode 433 is formed by being deposited on only the third sub-pixel 23 using a mask having an opening formed at the position of the third sub-pixel 23, or the first to third sub-pixels 21 and 22, After the entire surface is deposited on 23), it may be formed by patterning only on the third sub-pixel 23.

In this case, the third upper electrode 433 may also be formed between the second nanostructures NS22 to contact the upper surface of the third intermediate electrode 432, but the third upper electrode 433 may be formed through the third contact hole ACH3. It is possible to more reliably contact the upper surface of the intermediate electrode 432.

Next, referring to FIG. 5N, the third organic emission layer 73 is sequentially deposited over the first to third sub-pixels 21, 22, and 23. The third organic emission layer 73 may have the same thickness as the first organic emission layer 71 or the second organic emission layer 72. Since the third organic emission layer 73 is entirely deposited from the top to the bottom based on FIG. 5M, it may not be deposited on a surface having a vertical profile. Accordingly, as shown in FIG. 5N, the third organic emission layer 73 is formed between the first sub-pixel 21 and the second sub-pixel 22, and the second sub-pixel 22 and the third sub-pixel 23 ), the upper surface of the shield layer SL disposed on the upper surface of the first organic emission layer 71, the upper surface of the shield layer SL disposed on the upper surface of the second organic emission layer 72, and the third sub-pixel ( 23) can only be deposited.

That is, on both sides of the shield layer SL disposed on the upper surface of the first organic emission layer 71 and the third organic emission layer 73 on both sides of the shield layer SL disposed on the upper surface of the second organic emission layer 72. It may not be placed.

Accordingly, as shown in FIG. 5N, the third organic emission layer 73 is not connected to each other over the first to third sub-pixels 21, 22, and 23 and has a disconnected arrangement structure.

As the above-described disconnected arrangement structure is formed, a stripper solution used in a subsequent process is disposed on the first sub-pixel 21 and the shield layer SL disposed on the second sub-pixel 22 and the second sub-pixel 22 It can be made to penetrate into each exposed part. The exposed portion of the shield layer SL may mean both sides of the shield layer SL that are not covered by the third organic emission layer 73 with reference to FIG. 5N.

Next, referring to FIG. 5O, a strip process is performed using a stripper solution to remove the shield layer SL of the first and second sub-pixels 21 and 22 and the third organic emission layer 73 deposited thereon. do. The stripper solution penetrates into the exposed portion of the shield layer SL disposed on the first sub-pixel 21 as described above, so that the top surface of the first organic emission layer 71 is exposed. The shield layer SL of may be removed. Similarly, the stripper solution penetrates into the exposed portion of the shield layer SL disposed on the second sub-pixel 22, thereby exposing the upper surface of the second organic emission layer 72 to the shield of the second sub-pixel 22. The layer SL may be removed.

Meanwhile, in the process of FIG. 5O, since the entire display device having the structure of FIG. 5N is immersed in and removed from the stripper solution, the stripper solution is a third organic emission layer disposed between the first sub-pixel 21 and the second sub-pixel 22. A top surface of a part (Q) of 73, a top surface of a part (Q) of the third organic emission layer 73 disposed between the second sub-pixel 22 and the third sub-pixel 23, and a third sub-pixel The upper surface of the third organic emission layer 73 disposed on 23 may also be brought into contact. Since a hole blocking layer (not shown) having strong resistance to the stripper solution is disposed on the upper surface of the third organic emission layer 73, the third organic emission layer 73 may not be damaged by the stripper solution.

In addition, since the hole blocking layer of the third organic light emitting layer 73 can prevent penetration of the stripper solution toward the light emitting layer, the electron blocking layer, the hole transport layer, and the hole injection layer disposed at the lower side, the light emitting layer , The electron blocking layer, the hole transport layer, and the hole injection layer can be prevented from being damaged. That is, the hole blocking layer of the third organic light emitting layer 73 may function as a protective layer preventing penetration of the stripper solution. The function of the hole blocking layer is the hole blocking layer of the first organic emission layer 71 disposed on the first sub-pixel 21 and the second organic emission layer 72 disposed on the second sub-pixel 22. The same can be applied to layers.

Accordingly, as shown in FIG. 5O, the first to third sub-pixels 21, 22, and 23, the top surface 51 and the inclined surface of the first bank 5, and the top surface 61 of the second bank 6 ) And a hole blocking layer of the first organic emission layer 71, a hole blocking layer of the second organic emission layer 72, and a hole blocking layer of the third organic emission layer 73 may be disposed on the uppermost side of the inclined surface. The hole blocking layers may have a profile with almost no steps.

Next, referring to FIG. 5P, the manufacturing method of the display device 1 according to the exemplary embodiment of the present application includes an electron transport layer (not shown) and an electron transport layer (not shown) to cover the top surfaces of the hole blocking layers having a profile with almost no step as described above. By sequentially depositing the injection layer (not shown), the second electrode 8, and the encapsulation layer 9 on the entire surface, a part of the manufacturing process may be completed. Accordingly, the upper surface of the portion Q of the third organic light emitting layer 73, that is, the upper surface of the hole blocking layer may contact the lower surface of the electron transport layer.

In the manufacturing method of the display device 1 according to the exemplary embodiment of the present application, the third organic light-emitting layer 73 is performed by performing a strip process as shown in FIG. 5O after disposing the hole blocking layers having strong resistance to the stripper solution on the uppermost side. When forming, unlike when forming the first organic emission layer 71 and the second organic emission layer 72, the number of manufacturing processes can be reduced.

More specifically, when forming the third organic emission layer 73, a manufacturing process when forming the first organic emission layer 71 or the second organic emission layer 72 may be omitted. Taking the formation of the first organic light emitting layer 71 shown in FIGS. 5C to 5E as an example, FIG. 5C illustrates a shield layer (SL) coating process, a baking process for drying the shield layer (SL), a PR layer coating process, and a PR layer. A baking process for drying the material, an exposure process using a mask, FIG. 5D is a PR layer removal process using a developer, and FIG. 5E is a patterning process using an etching gas.

In the method of manufacturing the display device according to the exemplary embodiment of the present application, since the above-described seven processes may be omitted when forming the third organic emission layer 73, the above seven processes are performed when forming the third organic emission layer 73. Compared to the case of proceeding, the first organic light-emitting layer 71 and the second organic light-emitting layer 72 already formed before the formation of the third organic light-emitting layer 73 are used in the above seven processes, such as UV light, heat, developer, and etching solution. It can reduce the damage caused by.

As a result, if the manufacturing method of the display device according to the exemplary embodiment of the present application is used, the number of manufacturing processes can be reduced and simplified, thus reducing the tact time until manufacturing the completed display device, as well as Since it is possible to reduce damage to the organic light emitting layer by the process, it is possible to prevent deterioration of device characteristics.

In the above, it has been described that the electron transport layer and the electron injection layer are provided as a common layer over the first to third sub-pixels 21, 22, and 23, but are not necessarily limited thereto, and the electron transport layer and the electron injection layer have been described above. Included in each of the first organic emission layer 71 and the second organic emission layer 72 together with the layer may be patterned, and included in the third organic emission layer 73 to form a third sub-pixel 23 and a first bank 5. ) May be disposed on the upper surface 51 of the second bank 6 and the upper surface 61 of the second bank 6.

In this case, in the process of FIG. 5P, the second electrode 8 and the encapsulation layer 9 may be sequentially deposited on the entire surface to cover the electron injection layer of the first to third organic emission layers 71, 72, and 73. In addition, the upper surface of the part Q of the third organic light emitting layer 73 may be the upper surface of the electron injection layer, and the upper surface of the electron injection layer may be in contact with the lower surface of the second electrode 8.

Meanwhile, the display device 1 according to the exemplary embodiment of the present application illustrated in FIG. 5P may be manufactured through the method of manufacturing the display device according to the exemplary embodiment of the present application.

Referring to FIG. 5P, the first organic emission layer 71 is disposed to cover the top surface of the first sub-electrode 41, the slope of the bank disposed on both sides of the first sub-electrode 41, and a portion of the top surface of the bank. I can. The first organic emission layer 71 may be disposed to have a first width W1 in the first sub-pixel 21.

The second organic emission layer 72 may be disposed to cover an upper surface of the second sub-electrode 42 and an inclined surface of the bank disposed on both sides of the second sub-electrode 42 and a portion of the upper surface of the bank. The second organic emission layer 72 may be disposed to have a second width W2 in the second sub-pixel 22. The second width W2 may be provided equal to the first width W1.

The third organic emission layer 73 may be disposed to cover an upper surface of the third sub-electrode 43 and an inclined surface of the bank disposed on both sides of the third sub-electrode 43 and a portion of the upper surface of the bank. In addition, a portion (Q) of the third organic emission layer 73 is between the first sub-pixel 21 and the second sub-pixel 22, and between the second sub-pixel 22 and the third sub-pixel 23 It can also be arranged to cover additionally. That is, a part Q of the third organic emission layer 73 may be disposed to overlap at least a part of the upper surface 51 of the first bank 5 as shown in FIG. 5P, and the second bank It may be disposed to overlap at least a portion of the upper surface 61 of (6).

A portion (Q) of the third organic light-emitting layer 73 disposed on the upper surface 51 of the first bank 5 and the third organic light-emitting layer 73 disposed on the upper surface 61 of the second bank 6 Some Q may be formed at the same time as shown in FIG. 5N.

A portion (Q) of the third organic light emitting layer 73 disposed to overlap a portion of the top surface 51 of the first bank 5 may be provided to be smaller than the width of the top surface 51 of the first bank 5. have. This is because the first organic emission layer 71 and the second organic emission layer 72 disposed on both sides of the first bank 5 are disposed to cover a part of the upper surface 51 of the first bank 5. to be.

A portion (Q) of the third organic light emitting layer 73 disposed to overlap a portion of the upper surface 61 of the second bank 6 may be provided smaller than the width of the upper surface 61 of the second bank 6. have. This is because the second organic emission layer 72 and the third organic emission layer 73 disposed on both sides of the second bank 6 are disposed to cover a part of the upper surface 61 of the second bank 6. .

Therefore, if each of the first organic emission layer 71 and the second organic emission layer 72 disposed on both sides of the first bank 5 is disposed so as not to cover the upper surface 51 of the first bank 5, the third The width of a portion (Q) of the organic emission layer 3 may be the same as the width of the top surface 51 of the first bank 5 or greater than the width of the top surface 51 of the first bank 5, and the second When each of the second organic emission layer 72 and the third organic emission layer 73 disposed on both sides of the bank 6 is disposed so as not to cover the upper surface 61 of the second bank 6, the third organic emission layer 3 The width of the part Q of) may be the same as the width of the upper surface 61 of the second bank 6 or greater than the width of the upper surface 61 of the second bank 6.

Referring back to FIG. 5P, a portion Q of the third organic emission layer 73 overlapping a portion of the second bank 6 may be connected to the third organic emission layer 73. A part (Q) of the third organic emission layer 73 overlapped with a part of the second bank 6 is formed in the third sub-pixel 73 as in the manufacturing method shown in FIG. 5N. This is because it is formed at the same time as the light emitting layer 73.

Accordingly, the third organic emission layer 73 formed in the third sub-pixel 23 has a first width W1 or a second width W2 and a width of a portion Q of the third organic emission layer 73 is 2 It may be formed to have a third width W3 that is double-added. Therefore, it is natural that the third width W3 is greater than the first width W1 or the second width W2.

In the display device 1 according to the exemplary embodiment of the present application, the third organic emission layer 73 may be provided to emit blue light, but is not limited thereto, and the organic emission layer includes a hole blocking layer having strong resistance to a stripper solution. If included, it may be provided to emit red light or green light.

6 is a graph showing sheet resistance according to the thickness of the first electrode of FIG. 1.

Referring to FIG. 6, L is a graph measuring sheet resistance according to the thickness of the first electrode 4 cooled after heating the ITO material to 200° C. in a vacuum state. In other words, it is a graph measuring sheet resistance according to the thickness of the first electrode 4 that has been subjected to an Anneal process. Here, the horizontal axis represents the thickness of the first electrode 4 and the vertical axis represents the sheet resistance.

As shown in FIG. 6, L represents a downward-to-right pattern in which the sheet resistance decreases as the overall thickness increases.

In the display device 1 according to the exemplary embodiment of the present application, the first thickness T1 of the first sub-electrode 41 is about 50 nm, and the second thickness T2 of the second sub-electrode 42 is It is about 100 nm, and the third thickness T3 of the third sub-electrode 43 may be about 150 nm.

6, the sheet resistance of the first sub-electrode 41 is about 82 Ω/sq, the sheet resistance of the second sub-electrode 42 is about 70 Ω/sq, and the sheet resistance of the third sub-electrode 43 is about 82 Ω/sq. It can be seen that it is 60Ω/sq. That is, it can be seen that the thicker the thickness, the lower the sheet resistance. This may mean that it is possible to prevent a decrease in luminous efficiency by preventing a decrease in the driving voltage supplied to the first electrode 4 due to resistance.

As a result, when the method for manufacturing a display device according to an embodiment of the present application is used, the present application can solve the problem of non-uniform light emission due to the nanostructure (NS) and at the same time reduce the sheet resistance to prevent a decrease in luminous efficiency. The display device 1 according to the embodiment of may be manufactured.

In this specification, the first thickness T1 of the first sub-electrode 41 is about 50 nm, the second thickness T2 of the second sub-electrode 42 is about 100 nm, and the third sub-electrode 43 Although it has been described that the third thickness T3 is about 150 nm, it is not limited thereto, and the second thickness T2 of the second sub-electrode 42 is about 2 of the first thickness T1 of the first sub-electrode 41 When the condition that the third thickness T3 of the third sub-electrode 43 is about three times the first thickness T1 of the first sub-electrode 41 is satisfied, as shown in the graph of FIG. The third thickness T3 of the sub-electrode T3 is less than 700 nm, and the first thickness T1 of the first sub-electrode 41 may be variously changed within a range exceeding 50 nm.

7A to 7C relate to a display device according to another exemplary embodiment of the present application, which relates to a head mounted display (HMD) device. 7A is a schematic perspective view, FIG. 7B is a schematic plan view of a virtual reality (VR) structure, and FIG. 7C is a schematic cross-sectional view of an Augmented Reality (AR) structure.

As can be seen from FIG. 7A, the head mounted display device according to the present application includes a storage case 10 and a head mounting band 12.

The storage case 10 houses components such as a display device, a lens array, and an eyepiece therein.

The head mounting band 12 is fixed to the storage case 10. The head mounting band 12 is illustrated to be formed to surround the upper surface of the user's head and both sides, but is not limited thereto. The head mounting band 12 is for fixing the head mounted display to the user's head, and may be replaced with a structure in the form of an eyeglass frame or a helmet form.

As can be seen from FIG. 7B, the head-mounted display device 1 having a virtual reality (VR) structure according to the present application includes a left-eye display device 2a, a right-eye display device 2b, a lens array 11, and a left eye. It may include an eyepiece 20a and a right eyepiece 20b.

The left-eye display device 2a and the right-eye display device 2b, the lens array 11, and the left-eye eyepiece 20a and the right-eye eyepiece 20b are accommodated in the storage case 10 described above. .

The left-eye display device 2a and the right-eye display device 2b can display the same image, and in this case, the user can view the 2D image. Alternatively, the left-eye display device 2a may display a left-eye image and the right-eye display device 2b may display a right-eye image. In this case, the user may view a 3D image. Each of the left-eye display device 2a and the right-eye display device 2b may be formed of the display device according to FIGS. 1 to 5P described above. For example, each of the left-eye display device 2a and the right-eye display device 2b may be an organic light emitting display.

Each of the left-eye display device 2a and the right-eye display device 2b includes a plurality of sub-pixels, a circuit element layer 3, a first electrode 4, a nano structure NS, a first bank 5, A second bank 6, an organic emission layer 7, a second electrode 8, and an encapsulation layer 9 may be included, and various images are displayed by combining the colors of light emitted from each sub-pixel in various ways. can do.

The lens array 11 may be provided between the left-eye eyepiece 20a and the left-eye display device 2a while being spaced apart from each of the left-eye eyepiece 20a and the left-eye display device 2a. That is, the lens array 11 may be located in front of the left eye eyepiece 20a and behind the left eye display device 2a. In addition, the lens array 11 may be provided between the right eye eye lens 20b and the right eye display device 2b while being spaced apart from each of the right eye eye lens 20b and the right eye display device 2b. have. That is, the lens array 11 may be located in front of the right eye eyepiece 20b and behind the right eye display device 2b.

The lens array 11 may be a micro lens array. The lens array 11 may be replaced with a pin hole array. An image displayed on the left-eye substrate 2a or the right-eye substrate 2b due to the lens array 11 may be enlarged and viewed by the user.

The user's left eye LE may be positioned on the left eyepiece 20a, and the user's right eye RE may be positioned on the right eyepiece 20b.

As can be seen from FIG. 7C, the head-mounted display device having an Augmented Reality (AR) structure according to the present invention includes a left-eye display device 2a, a lens array 11, a left eye eyepiece 20a, and a transmission reflector 13. , And a transmission window 14. In FIG. 7C, only the left-inside configuration is shown for convenience, and the right-inside configuration is also the same as the left-inside configuration.

The left-eye display device 2a, the lens array 11, the left-eye eyepiece 20a, the transmission reflection part 13, and the transmission window 14 are accommodated in the storage case 10 described above.

The left eye display device 2a may be disposed on one side of the transmission and reflection part 13, for example, on the upper side, without covering the transmission window 14. Accordingly, the left-eye display device 2a may provide an image to the transmissive and reflective unit 13 without covering the external background visible through the transmissive window 14.

The left eye display device 2a may be formed of the electroluminescent display device according to FIGS. 1 to 5P described above. In this case, an upper portion corresponding to a surface on which an image is displayed in FIGS. 1 to 5P, for example, the encapsulation layer 9 faces the transmission reflective portion 13.

The lens array 11 may be provided between the left eye eyepiece 20a and the transmission reflective part 13.

The user's left eye is positioned on the left eye eyepiece 20a.

The transmission reflection part 13 is disposed between the lens array 11 and the transmission window 14. The transmission and reflection part 13 may include a reflective surface 13a that transmits a part of light and reflects another part of the light. The reflective surface 13a is formed so that the image displayed on the left eye display device 2a proceeds to the lens array 11. Accordingly, the user can see both an external background and an image displayed by the left eye display device 2a through the transmission window 14. That is, since the user can view the real background and the virtual image as a single image, an Augmented Reality (AR) can be implemented.

The transmission window 14 is disposed in front of the transmission and reflection part 13.

The present application described above is not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications, and changes are possible within the scope of the technical spirit of the present application. It will be obvious to those who have the knowledge of. Therefore, the scope of the present application is indicated by the claims to be described later, and all changes or modified forms derived from the meaning and scope of the claims and their equivalent concepts should be interpreted as being included in the scope of the present application.

1: display device
2: substrate 3: circuit element layer
4: first electrode 5: first bank
6: second bank 7: organic light emitting layer
8: second electrode 9: encapsulation layer
10: storage case 11: lens array
12: head mounting band NS: nano structure

Claims (18)

A substrate having a plurality of sub-pixels;
A first electrode disposed on each of the plurality of sub-pixels;
An organic light emitting layer disposed on the first electrode;
A second electrode disposed on the organic emission layer; And
Including a nanostructure disposed in the remaining sub-pixels excluding one of the plurality of sub-pixels,
The first electrode disposed on the remaining sub-pixels covers the nanostructure. The method of claim 1,
A display device in which the first electrode disposed on the remaining sub-pixels is thicker than the first electrode disposed in the one sub-pixel. The method of claim 1,
The first electrodes disposed on the remaining sub-pixels have different thicknesses. The method of claim 1,
A display device in which the first electrode disposed on the remaining sub-pixels is thicker as the distance from the one sub-pixel increases. The method of claim 1,
The organic emission layer disposed on each of the plurality of sub-pixels is disposed at different heights. The method of claim 1,
The organic emission layer disposed on the remaining sub-pixels is disposed at a higher position as the distance from the one sub-pixel increases. The method of claim 1,
The plurality of sub-pixels include a first sub-pixel, a second sub-pixel, and a third sub-pixel,
The first electrode includes a first sub-electrode provided in the first sub-pixel, a second sub-electrode provided in the second sub-pixel, and a third sub-electrode provided in the third sub-pixel,
The organic emission layer includes a first organic emission layer disposed on the first sub-electrode, a second organic emission layer disposed on the second sub-electrode, and a third organic emission layer disposed on the third sub-electrode,
The nanostructure is provided only in the second sub-pixel and the third sub-pixel. The method of claim 7,
The second sub-electrode is provided thicker than the first sub-electrode,
The third sub-electrode is provided thicker than the second sub-electrode. The method of claim 7,
The second sub-electrode includes a second lower electrode in contact with a lower portion of the nanostructure, and a second upper electrode in contact with a portion other than the lower portion of the nanostructure. The method of claim 9,
The nanostructure disposed in the second sub-pixel includes a first contact hole for contacting the second lower electrode and the second upper electrode,
A portion of the second upper electrode is inserted into the first contact hole. The method of claim 7,
The nanostructure disposed in the third sub-pixel includes a first nanostructure disposed closer to the substrate, and a second nanostructure disposed closer to the third organic emission layer than the first nanostructure,
A display device in which a part of a third sub-electrode is disposed between the first nanostructure and the second nanostructure. The method of claim 11,
The third sub-electrode may include a third lower electrode in contact with a lower portion of the first nanostructure, a third intermediate electrode in contact with a lower portion of the first nanostructure and a lower portion of the second nanostructure, and the A display device including a third upper electrode in contact with a portion other than a lower portion of the second nanostructure. The method of claim 12,
The first nanostructure includes a second contact hole for contacting the third lower electrode and the third intermediate electrode,
A portion of the third intermediate electrode is inserted into the second contact hole. The method of claim 12,
The second nanostructure includes a third contact hole for contacting the third intermediate electrode and the third upper electrode,
A portion of the third upper electrode is inserted into the third contact hole. The method of claim 13,
The second nanostructure includes a third contact hole for contacting the third intermediate electrode and the third upper electrode,
The third contact hole is disposed in a straight line with the second contact hole. The method of claim 7,
A first bank provided between the first sub-electrode and the second sub-electrode to divide the first sub-pixel and the second sub-pixel; And
And a second bank provided between the second sub-electrode and the third sub-electrode to divide the second sub-pixel and the third sub-pixel,
A portion of the third organic emission layer is disposed on an upper surface of the first bank and an upper surface of the second bank. The method of claim 7,
The first organic emission layer, the second organic emission layer, and the third organic emission layer are provided to emit red light, green light, and blue light, respectively,
A display device in which a width of the third organic emission layer is wider than a width of the first organic emission layer or a width of the second organic emission layer. The method according to any one of claims 1 to 17,
A display device further comprising a lens array spaced apart from the substrate, and a storage case accommodating the substrate and the lens array.

Images