KR20200137118A - Substrate processing apparatus - Google Patents

Abstract

The present invention relates to a substrate processing device, and more specifically, to a substrate processing device, wherein in the substrate processing device that performs a processing process on a substrate using a supercritical fluid, when a supercritical fluid is supplied from the chamber to the substrate, a dead zone is created by creating a swirl or turbulent flow.

Description

Substrate processing apparatus

The present invention relates to a substrate processing apparatus, and more particularly, in the case of supplying a supercritical fluid toward a substrate in a chamber in a substrate processing apparatus that performs a processing process on a substrate using a supercritical fluid, a swirl ) Or by creating a turbulent flow to reduce a dead zone on a substrate.

In general, when manufacturing a highly integrated semiconductor device such as LSI (Large Scale Integration) on the surface of a semiconductor wafer (hereinafter referred to as a wafer), it is necessary to form an ultrafine pattern on the wafer surface.

Such an ultra-fine pattern may be formed by patterning the resist through various processes of exposing, developing, and cleaning the wafer coated with the resist, and then transferring the resist pattern to the wafer by etching the wafer.

Then, after such etching, a process of cleaning the wafer is performed in order to remove dust or natural oxide film on the wafer surface. The cleaning treatment is performed by immersing a wafer having a pattern on its surface in a processing liquid such as a chemical liquid or a rinse liquid, or by supplying a processing liquid to the wafer surface.

By the way, as semiconductor devices become highly integrated, pattern collapse occurs in which a pattern on the surface of a resist or wafer is collapsed when the processing liquid is dried after performing a cleaning treatment.

This pattern collapse occurs when the cleaning treatment is finished and the treatment liquid 14 remaining on the surface of the wafer W is dried, as shown in FIG. 16, when the treatment liquids on the left and right of the patterns 11, 12, 13 are unevenly dried. , This corresponds to a phenomenon in which the patterns 11, 12, 13 collapse due to the surface tension that stretches the patterns 11, 12, 13 left and right.

The root cause of the above-described pattern collapse is due to the surface tension of the treatment liquid acting at the liquid/gas interface placed between the atmospheric atmosphere surrounding the wafer W after cleaning and the treatment liquid remaining between the patterns.

Therefore, in recent years, attention has been paid to a treatment method in which a treatment liquid is dried using a fluid in a supercritical state (hereinafter referred to as a “supercritical fluid”) that does not form an interface between a gas or a liquid.

In the prior art drying method (dotted line shown) using only temperature control in the state diagram of pressure and temperature of FIG. 17, since it passes through the gas-liquid coexistence line, surface tension occurs at the gas-liquid interface at this time.

On the other hand, in the case of drying via a supercritical state using both the temperature and pressure control of the fluid, the gas-liquid coexistence line does not pass, and it becomes possible to dry the substrate in a state essentially free of surface tension.

Looking at drying using a supercritical fluid with reference to FIG. 17, when the pressure of the liquid is increased from A to B, and then the temperature is increased from B to C, the gas-liquid coexistence line does not pass and the supercritical state C is converted. In addition, when the drying process is completed, the pressure of the supercritical fluid is lowered to convert it to gas D without passing through the gas-liquid coexistence line.

Meanwhile, in the case of performing a processing process such as a drying process for the wafer W by using the fluid in the supercritical state as described above, the flow energy of the fluid in the supercritical state is uniformly transmitted to the wafer W. It is important. When the flow energy of the fluid is not transmitted to a certain area of the upper surface of the wafer W, or a so-called'dead zone', which is relatively small, occurs, the pattern of the wafer W (11) occurs in the corresponding dead zone area. This is because the treatment liquid 14 or the like existing between the elements 12 and 13 may not be appropriately substituted.

In addition, even when a fluid is supplied using a showerhead or the like, a dead zone may occur on the upper surface of the wafer W. That is, in order to use a fluid in a supercritical state, a pressure above the critical pressure must be maintained inside the chamber, and the higher the pressure, the higher the density of the fluid due to compression. When the fluid density increases in this way, the volume of the fluid decreases, which causes a decrease in the flow velocity of the fluid. Therefore, in the case of a supercritical high-pressure fluid, a dead zone may occur on the upper surface of the wafer W between the through holes of the showerhead due to the slow flow rate.

In order to solve this problem, in the case of the substrate processing apparatus according to the prior art, a configuration in which the susceptor on which the wafer W is mounted is rotated or the fluid supply unit for supplying the fluid is rotated.

In this way, when the susceptor or the fluid supply unit is rotated, the fluid can be relatively uniformly supplied to the upper surface of the wafer W. However, as described above, since the pressure inside the chamber needs to be maintained at a high pressure higher than the critical pressure, installing the configuration for rotating the susceptor or the fluid supply unit requires components such as sealing, which complicates the device configuration. Can be made. In particular, when the susceptor or the fluid supply unit is rotated as in the conventional substrate processing apparatus, foreign substances such as powder may be generated due to friction in the rotation region, which may cause particles.

In the present invention, in order to solve the above-described problems, a swirl or turbulent flow is generated in the flow of the fluid inside the chamber to prevent the occurrence of dead zones on the upper surface of the substrate, and furthermore, the processing liquid between the patterns is facilitated. It is intended to provide a substrate processing apparatus that can be replaced.

Further, an object of the present invention is to provide a substrate processing apparatus capable of generating vortex or turbulence in the chamber without having a separate rotating component in the chamber.

An object of the present invention as described above is a chamber that provides a processing space for performing a processing process on a substrate using a fluid in a supercritical state, a substrate support part provided inside the chamber to support the substrate, and a fluid into the chamber. A fluid supply unit that supplies a fluid, a fluid discharge unit that discharges fluid from the chamber, and a flow rate supplied to the chamber by changing the density or viscosity of the fluid by changing the density or viscosity of the fluid or discharged from the chamber. It is achieved by the substrate processing apparatus, characterized in that it comprises a flow rate control unit for changing the flow rate.

Here, the flow rate controller may change the density or viscosity of the fluid by adjusting the temperature of the fluid.

In addition, by changing the density or viscosity of the fluid by the flow control unit, the supply direction of the fluid into the chamber or the discharge direction of the fluid from the chamber may be changed.

Meanwhile, the fluid supply unit may include at least two fluid supply passages connected to the upper part of the chamber, and the flow control unit may be provided in the fluid supply passage to adjust the temperature of the fluid to adjust the density or viscosity of the fluid.

Further, the fluid discharge unit may include at least two fluid discharge passages connected to the chamber, and the flow control unit may be provided in the fluid discharge passage to adjust the temperature of the fluid to adjust the density or viscosity of the fluid.

In this case, the flow control unit may include a heating/cooling unit disposed at least in one of the fluid supply passage and the fluid discharge passage to heat or cool the fluid.

Meanwhile, the flow control unit may further include a shaft pipe portion formed at at least one of the fluid supply passage and the fluid discharge passage, and the heating/cooling portion may be disposed adjacent to the shaft pipe portion.

In addition, the heating/cooling unit may adjust the flow rate passing through the shaft pipe by heating the fluid at a predetermined or random cycle to increase or decrease the density or viscosity of the fluid.

Meanwhile, a plurality of discharge holes are formed inside the chamber, and the fluid discharge passage may be connected to the plurality of discharge holes.

Further, a first discharge plate having a plurality of discharge holes formed at the base of the chamber, and a first discharge plate having at least two channels provided below the first discharge plate to connect the plurality of discharge holes and the fluid discharge passage are formed. 2 Can be equipped with a discharge plate.

Meanwhile, a main discharge passage to which the at least two fluid discharge passages are connected, and a main discharge valve for adjusting an opening degree of the main discharge passage are further provided, and the main discharge valve during the processing process for the substrate is provided with a predetermined flow rate. It is possible to maintain an open state with an open degree corresponding to

Further, a showerhead provided at an upper portion of the chamber and having at least two partitioned buffer spaces may be further provided, and the at least two fluid supply passages may be connected to the at least two buffer spaces, respectively.

In addition, a main supply passage connected to the at least two fluid supply passages, and a main supply valve for adjusting an opening degree of the main supply passage, and the main supply valve during the processing process for the substrate is a predetermined flow rate It is possible to maintain an open state with an open degree corresponding to

On the other hand, the object of the present invention as described above is provided with a fluid storage unit for storing a fluid, a main supply passage connected to the fluid storage unit to move the fluid, and at least two fluid supply passages branching from the main supply passage. A fluid supply network, a flow control unit provided in the at least two fluid supply passages to change the flow rate or flow rate of the fluid by changing the density or viscosity of the fluid passing through the fluid supply passages, and connected to the at least two fluid supply passages And a chamber for providing a processing space for performing a processing process on the substrate, and a valve is not provided between the flow control unit and the chamber.

Here, the main supply valve is provided in the main supply passage to adjust the flow rate of the fluid supplied through the main supply passage, and a filter unit provided at the rear end of the main supply valve in the main supply passage to filter foreign substances. can do.

In addition, the flow rate control unit may include a heating/cooling unit disposed in the fluid supply passage to heat or cool the fluid.

Further, the flow control unit may further include a shaft pipe portion formed in the fluid supply passage, and the heating and cooling portion may be disposed adjacent to the shaft pipe portion.

According to the present invention having the above-described configuration, vortex or turbulence is generated in the flow of the fluid inside the chamber to prevent the occurrence of dead zones on the upper surface of the substrate, and further, it is possible to easily replace the processing liquid between patterns.

Further, according to the present invention, a vortex or turbulence can be generated in the chamber without having a separate rotating component in the chamber, so that a particle factor that may be generated by the rotating component can be blocked.

1 is a side cross-sectional view showing the configuration of a chamber in a substrate processing apparatus according to an embodiment of the present invention;
2 is a schematic diagram showing the configuration of a substrate processing apparatus according to an embodiment of the present invention;
3 is a partial cross-sectional view showing the flow rate control unit in FIG. 1,
4 is a plan view of a discharge plate assembly constituting a fluid discharge unit in a substrate processing apparatus according to an embodiment;
5 is an exploded perspective view of the discharge plate assembly,
6 is a bottom perspective view of the discharge plate assembly,
7 is a graph showing whether fluid is heated by a flow control unit provided in each fluid discharge passage in a substrate processing apparatus having four fluid discharge passages according to an embodiment;
8 and 9 are cross-sectional views showing the flow direction of the fluid in the chamber according to the heating of the fluid of the flow control unit according to FIG. 6;
10 is a graph showing whether fluid is heated by a flow control unit provided in each fluid discharge passage in a substrate processing apparatus having four fluid discharge passages according to another embodiment;
11 is a side cross-sectional view showing a substrate processing apparatus according to another embodiment;
12 is an exploded perspective view of a shower head provided in the substrate processing apparatus according to FIG. 11;
13 is a fluid heating of a flow control unit provided in each fluid supply passage and a flow control unit provided in each fluid discharge passage in a substrate processing apparatus having four fluid supply passages and four fluid discharge passages according to another embodiment Graph showing whether or not,
14 and 15 are cross-sectional views illustrating a flow direction of a fluid in the chamber according to the heating of the fluid of the flow control unit according to FIG. 13;
16 is a diagram schematically showing a state in which the pattern collapses when the pattern on the substrate is dried according to the prior art;
17 is a state diagram showing changes in pressure and temperature of a fluid in a treatment process using a supercritical fluid.

Hereinafter, a structure of a substrate processing apparatus according to an embodiment of the present invention will be described in detail with reference to the drawings.

1 is a side cross-sectional view showing the configuration of a chamber 100 in a substrate processing apparatus 1000 according to an embodiment of the present invention.

The substrate processing apparatus 1000 according to the present invention performs a processing process on the substrate W using a fluid in a supercritical state. Here, the fluid in the supercritical state corresponds to a fluid having a phase formed when a substance reaches a critical state, that is, a state in which the critical temperature and the critical pressure are exceeded. Fluids in such a supercritical state have a molecular density close to that of a liquid while viscosity is close to that of a gas. Therefore, the fluid in the supercritical state has excellent diffusion, penetrating power, and dissolving power, which is advantageous for chemical reactions, and has little surface tension, so it does not apply surface tension to the microstructure. It can be very useful because it can avoid the pattern collapse phenomenon.

In the present invention, carbon dioxide (CO ₂ ) may be used as the supercritical fluid. Carbon dioxide has a critical temperature of about 31.1℃ and a relatively low critical pressure of 7.38Mpa, which is easy to make into a supercritical state, and it is easy to control its state by adjusting temperature and pressure, and has the advantage of low cost.

In addition, carbon dioxide is not toxic, so it is harmless to the human body, and has non-flammable and inert properties. Furthermore, carbon dioxide in a supercritical state has a high diffusion coefficient of about 10 to 100 times compared to water or other organic solvents, so its permeability is very good, so the replacement of the organic solvent is fast and there is little surface tension, so the drying process It has advantageous properties for use. In addition, it is possible to separate and reuse the organic solvent by converting the carbon dioxide used in the drying process into a gaseous state, thus reducing the burden in terms of environmental pollution.

Referring to FIG. 1, the substrate processing apparatus 1000 includes a chamber 100 providing a processing space 110 for performing a processing process on a substrate W using a fluid in a supercritical state, and the chamber 100. ) A substrate support part 310 provided inside and supporting the substrate W, a fluid supply part 600 supplying a fluid into the chamber 100 (see FIG. 2), and a fluid inside the chamber 100. A fluid discharge part 500 to be discharged may be provided.

In this case, the substrate processing apparatus 1000 is provided on at least one of the fluid supply unit 600 and the fluid discharge unit 500 to change the density or viscosity of the fluid to change the flow rate supplied to the chamber 100 Or, it may be provided with a flow rate control unit (550A ~ 550D, 2142A ~ 2142D) (see Figs. 6 and 12) for changing the flow rate discharged from the chamber 100.

That is, in the substrate processing apparatus 1000 according to the present embodiment, the flow control units 550A to 550D and 2142A to 2142D change the density or viscosity of the supercritical fluid to change the fluid supply unit 600 or the fluid discharge unit. By changing the flow rate of the supercritical fluid passing through 500, the direction of the fluid supplied to the chamber 100 or the direction of the fluid discharged from the chamber 100 is changed to create a vortex or turbulence inside the chamber 100. Will occur.

In the embodiment according to FIG. 1, a case where the flow rate control units 550A to 550D are provided in the fluid discharge unit 500 will be described, and thereafter, the flow rate to the fluid supply unit 600 and the fluid discharge unit 500 A case in which all of the adjustment units 550A to 550D and 2142A to 2142D are provided will be described.

As shown in FIG. 1, the chamber 100 may provide a processing space 110 for performing a processing process such as a drying process for the substrate W using a fluid in a supercritical state.

A substrate support 310 on which the substrate W is mounted and supported may be provided in the processing space 110 inside the chamber 100. In addition, a fluid discharge unit 500 for discharging the fluid inside the chamber 100 may be provided below the chamber 100.

Meanwhile, a fluid supply unit 600 for supplying a fluid into the chamber 100 may be connected to an upper portion of the chamber 100. In the processing space 110, the fluid may exist in a gas, liquid, or supercritical state depending on pressure and temperature conditions inside the chamber 100.

The fluid supplied from the fluid supply unit 600 is supplied into the chamber 100 through a fluid supply port 130 connected to the upper portion of the chamber 100.

Meanwhile, a shower head 200 may be provided at an upper portion of the chamber 100. For example, a diffusion space 112 may be formed between the shower head 200 and the ceiling of the chamber 100, and a plurality of through holes 210 may be formed in the shower head 200. . Accordingly, the fluid supplied into the chamber 100 through the fluid supply port 130 is diffused in the diffusion space 112 to pass the substrate W through the through hole 210 of the showerhead 200. Can be supplied towards.

In addition, a fluid discharge unit 500 for discharging a fluid from the processing space 110 of the chamber 100 may be provided below the chamber 100. The fluid discharge unit 500 will be described in detail later.

2 is a schematic diagram showing a configuration of a substrate processing apparatus 1000 according to an embodiment of the present invention. 2 schematically shows a configuration of a fluid supply unit 600 that supplies a fluid toward the fluid supply port 130 (see FIG. 1).

Referring to FIG. 2, the substrate processing apparatus 1000 may include a fluid supply unit 600 for supplying a fluid toward the fluid supply port 130 by adjusting at least one of a temperature and a pressure of the fluid.

For example, the fluid supply unit 600 may include a fluid storage unit 605 for storing the fluid, and a main supply passage 635 connecting the fluid storage unit 605 and the chamber 100. have. The main supply passage 635 is connected to the fluid supply port 130 of the chamber 100.

In this case, a pressure control unit 610 and a temperature control unit 620 may be disposed along the main supply passage 635. At this time, the pressure control unit 610 may be configured as, for example, a pressure pump, and the temperature control unit 620 may be configured as a heater or a heating cooling unit that heats the fluid.

Further, the main supply passage 635 may further include a sensing unit 630 for sensing at least one of the pressure and temperature of the fluid. The pressure and temperature may be sensed by the sensing unit 630 to adjust the pressure and temperature of the fluid flowing in the main supply passage 635. To this end, the substrate processing apparatus 1000 according to an embodiment of the present invention may include a control unit (not shown) that controls the pressure control unit 610 and the temperature control unit 620. The control unit may control the pressure control unit 610 and the temperature control unit 620 based on the pressure and temperature sensed by the detection unit 630.

On the other hand, when performing the processing process on the substrate (W), the internal environment of the processing space 110 of the chamber 100, that is, the temperature and pressure of the processing space 110 to the inside of the chamber 100 An environment above the critical temperature and critical pressure that can convert the supplied fluid into a supercritical state must be created and maintained during the process.

To this end, while the fluid is moving along the main supply passage 635, the pressure control unit 610 may pressurize the fluid to a critical pressure or higher, and the temperature control unit 620 Thus, the fluid may be heated to a critical temperature or higher.

Meanwhile, the processing space 110 of the chamber 100 is maintained in a closed state, so that the pressure of the fluid supplied to the processing space 110 in a liquid state or a supercritical state can be maintained above a critical pressure.

In addition, the chamber 100 may further include a heating unit (not shown) to maintain the temperature of the processing space 110 above a predetermined temperature. The temperature of the processing space 110 or the temperature of the fluid accommodated in the processing space 110 may be maintained above a critical temperature during the process of the substrate W by the heating unit.

Accordingly, when the fluid is supplied to the processing space 110 of the chamber 100 along the main supply passage 635, the fluid exists in the gaseous state in the processing space 110. Subsequently, when the fluid is continuously supplied and pressurized by the pressure control unit 610, the fluid in the processing space 110 may change into a liquid phase. When the pressure of the fluid in the processing space 110 is pressurized to a critical pressure or higher, when the fluid is heated to a critical temperature or higher by the temperature control unit 620 or the heating unit provided in the chamber 100 The fluid accommodated in the processing space 110 may be converted to a supercritical state.

Meanwhile, as described above, when a processing process such as a drying process for the substrate W is performed using a fluid in a supercritical state in the processing space 110 inside the chamber 100, the flow energy of the fluid It is important that is uniformly transmitted toward the substrate W. When the flow energy of the fluid is not transmitted to the upper surface of the substrate W, or a so-called'dead zone', which is relatively small, occurs, the pattern of the substrate W (not shown) occurs in the corresponding dead zone area. This is because treatment liquids or organic solvents such as IPA (Isopropyl alcohol), etc., which exist between Si) may not be appropriately substituted.

Meanwhile, in order to use a fluid in a supercritical state, a pressure equal to or higher than the critical pressure must be maintained inside the chamber 100, and the higher the pressure, the higher the density of the fluid due to compression. When the fluid density increases in this way, the volume of the fluid decreases, which causes a decrease in the flow velocity of the fluid. Accordingly, in the case of a high-pressure fluid in a supercritical state, a dead zone may occur on the upper surface of the substrate W between the through holes 210 of the showerhead 200 due to a slow flow rate.

Further, the substitution rate of a treatment liquid such as Isopropyl alcohol (IPA) or an organic solvent between the patterns of the substrate W is proportional to the fluidity of the fluid in the supercritical state inside the chamber 100. Therefore, it is necessary to generate a vortex or turbulence in the chamber 100 in order to improve the substrate processing efficiency or productivity of the substrate processing apparatus.

In order to solve this problem, in the case of a substrate processing apparatus according to the prior art, a configuration in which the susceptor on which the substrate W is mounted is rotated or the fluid supply unit for supplying the fluid is rotated. In this way, when the susceptor or the fluid supply unit is rotated, the fluid can be relatively uniformly supplied to the upper surface of the substrate.

However, as described above, since the pressure inside the chamber 100 needs to be maintained at a high pressure higher than or equal to the critical pressure, installing a configuration for rotating the susceptor or the fluid supply unit requires components such as sealing, and thus the device is configured. Can be very complicated. In particular, when the susceptor or the fluid supply unit is rotated as in the conventional substrate processing apparatus, foreign substances such as powder may be generated due to friction in the rotation region, which may cause particles.

In the present invention, in order to solve the above-described problem, a swirl or turbulent flow is generated in the flow of the fluid inside the chamber 100 to prevent the occurrence of a dead zone on the upper surface of the substrate W, and furthermore, the pattern It is an object to provide a substrate processing apparatus capable of easily replacing the organic solvent therebetween. Further, the present invention is to provide a substrate processing apparatus capable of generating vortex or turbulence in the chamber 100 without having a separate rotating component in the chamber 100.

Referring to FIG. 1, the substrate processing apparatus 1000 discharges a fluid from the inside of the chamber 100, and changes the density or viscosity of the fluid to change the flow rate discharged from the chamber ( 550A, 550B, 550C, 550D) may be provided in the fluid discharge unit 500.

In the substrate processing apparatus 1000 according to the present embodiment, when the fluid is discharged from the processing space 110 of the chamber 100 by the fluid discharge unit 500, the first flow rate control units 550A, 550B, By changing the density or viscosity of the fluid by 550C and 550D), a vortex or turbulence may be generated in the flow of the fluid inside the processing space 110.

In addition, in the case of the substrate processing apparatus 1000 according to the present embodiment, mechanical components such as a valve between the chamber 100 and the first flow rate control unit 550A, 550B, 550C, and 550D are omitted, and the By controlling the flow rate by controlling the viscosity or density of the fluid, the generation of particles and the like can be significantly reduced.

For example, the first flow rate control unit (550A, 550B, 550C, 550D) changes the density or viscosity of the fluid by adjusting at least one of the temperature or pressure of the fluid so that the fluid inside the chamber 100 Vortex or turbulence can be generated by changing the direction or location of discharge. That is, when the direction or location of the fluid discharged from the processing space 110 inside the chamber 100 is changed in a predetermined or random period, the fluid discharged from the processing space 110 toward the bottom This can cause eddy currents or turbulence.

In this embodiment, the density or viscosity of the fluid is controlled by controlling the temperature among the temperature and pressure of the fluid. When both the temperature and pressure of the fluid are changed, the temperature or pressure of the fluid may fall below the critical point and escape from the supercritical state, so the density or viscosity of the fluid is changed by changing the temperature to maintain the supercritical state of the fluid. Is adjusted.

Specifically, the fluid discharge part 500 includes at least two fluid discharge passages 540A, 540B, 540C, 540D (see FIG. 6) connected to the lower part of the chamber 100, and the fluid discharge passages 540A, 540B, The first flow rate controller 550A, 550B, 550C, which is provided in each of 540C and 540D and can adjust the density or viscosity of the fluid by controlling the temperature of the fluid passing through the fluid discharge passages 540A, 540B, 540C, and 540D. 550D) (see FIG. 6) may be provided.

In this case, when the fluid discharge passages 540A, 540B, 540C, and 540D are connected to the lower part of the chamber 100, they may be connected along an approximately edge of the substrate support part 310. That is, when the substrate W is seated on the substrate support part 310, when the fluid discharge passages 540A, 540B, 540C, 540D are connected to the lower portion of the chamber 100, the substrate W is substantially ) Can be connected along the edge.

For example, four fluid discharge passages 540A, 540B, 540C, and 540D may be connected to the lower part of the chamber 100, and each of the fluid discharge passages 540A, 540B, 540C, 540D is the substrate support part It may be connected while forming an angle of approximately 90 degrees around the center of (310). The number and center angles of the fluid discharge passages 540A, 540B, 540C, and 540D are merely described as an example and may be appropriately modified.

In addition, each of the fluid discharge passages (540A, 540B, 540C, 540D) is provided with a first flow control unit (550A, 550B, 550C, 550D) capable of adjusting the density or viscosity of the fluid by controlling the temperature of the fluid. I can. The flow rate passing through each of the fluid discharge passages 540A, 540B, 540C, and 540D may be adjusted by the first flow rate control unit 550A, 550B, 550C, and 550D.

3 is a partial cross-sectional view illustrating one first flow rate control unit 550A in FIG. 1.

Referring to FIG. 3, the first flow rate control unit 550A may include a heating/cooling unit 5500 disposed in the fluid discharge passage 540A to heat or cool the fluid.

First, the heating/cooling unit 5500 may change the density or viscosity of the fluid by heating or cooling the fluid that is provided in the fluid discharge passage 540A and passes through the fluid discharge passage 540A.

In this case, when the heating/cooling unit 5500 is driven to heat the fluid, the density or viscosity of the fluid decreases. On the contrary, when the heating/cooling unit 5500 is not driven, the temperature of the fluid decreases. The density or viscosity of the fluid becomes relatively large.

When the density or viscosity of the fluid decreases, the resistance to the flow of the fluid becomes relatively small, so that the flow rate passing through the fluid discharge passage 540A increases and the flow rate increases. Conversely, when the density or viscosity of the fluid increases, the resistance to the flow of the fluid increases relatively, so that the flow rate passing through the fluid discharge passage 540A is relatively small, and the flow rate decreases.

The heating/cooling unit 5500 is disposed in the fluid discharge passage 540A and includes a heater part 5510 such as a hot wire coil surrounding the fluid discharge passage 540A, and a cooling passage for cooling the fluid. It may have a sub (not shown). However, if the heating/cooling unit 5500 includes both the heater unit 5510 and the cooling unit, the device becomes larger and the control may be complicated. In this embodiment, the heating/cooling unit 5500 heats the fluid. It will be described on the assumption that only the heater part 5510 is provided.

Accordingly, the flow rate or flow rate discharged through each of the fluid discharge passages 540A, 540B, 540C, 540D can be respectively adjusted by the first flow rate control unit 550A, 550B, 550C, and 550D. In this case, the heating cycle of the first flow rate control unit 550A, 550B, 550C, 550D may be changed in a predetermined or random cycle.

For example, in the case of having four fluid discharge passages (540A, 540B, 540C, 540D), the first flow control unit 550A provided in the first fluid discharge passage 540A heats (ON) the fluid and , The first flow control units 540B, 540C, 540D provided in the remaining three fluid discharge passages 540B, 540C, 540D may not heat the fluid (OFF). In this case, the relatively largest amount of the fluid supplied through the shower head 200 flows from the processing space 110 toward the first fluid discharge passage 540A having the lowest flow resistance. In addition, only a portion of the remaining fluid may be discharged through the remaining three fluid discharge passages 540B, 540C, and 540D.

This is because when the first flow control unit 550A provided in the first fluid discharge passage 540A heats the fluid, the density or viscosity of the fluid passing through the first fluid discharge passage 540A decreases, so that the flow resistance is relatively low. This is because a lot of the fluid inside the chamber 100 is discharged through the first fluid discharge passage 540A with a small flow resistance.

Subsequently, the first flow control unit 550A provided in the first fluid discharge passage 540A at a predetermined or random cycle stops heating of the fluid and adjusts the first flow rate provided in the third fluid discharge passage 540C. When the part 550C heats the fluid, the fluid flowing toward the first fluid discharge passage 540A changes the flow direction and flows toward the third fluid discharge passage 540C, whose flow resistance is reduced.

Accordingly, as the fluid is discharged from the inside of the chamber 100, the direction in which the fluid flows is changed, so that a vortex or turbulence may be generated in the flow of the fluid in the processing space 110. Accordingly, it is possible to suppress the occurrence of dead zones on the upper surface of the substrate W, and to effectively replace the organic solvent between the patterns (not shown) of the substrate W.

In addition, the first flow rate control unit (550A, 550B, 550C, 550D) further includes a shaft pipe portion 5600 formed in the fluid discharge passage (540A), as shown in Figure 3, the heating and cooling unit The 5500 may be disposed adjacent to the shaft pipe part 5600.

In this case, the heating/cooling unit 5500 may adjust the flow rate passing through the shaft pipe portion 5600 by heating the fluid at a predetermined or random cycle to increase or decrease the density or viscosity of the fluid. There will be.

The shaft pipe part 5600 is formed in the fluid discharge passage 540A and serves to add flow resistance to the fluid passing through the fluid discharge passage 540A. That is, by adding a certain amount of flow resistance by the shaft pipe part 5600, the flow rate passing through the fluid discharge passage 540A is relatively clearly distinguished.

For example, when the fluid is not heated by the above-described first flow rate control unit 550A, the density or viscosity of the fluid is relatively increased, so that the flow resistance is primarily increased, and furthermore, the flow resistance is increased. Accordingly, the flow resistance is secondarily increased, so that the flow rate discharged through the fluid discharge passage 540A becomes extremely small. On the other hand, when the fluid is heated by the above-described first flow rate control unit 550A, the density or viscosity of the fluid becomes relatively small, so that even when the flow resistance is generated by the shaft pipe unit 5600, the fluid discharge passage The flow rate discharged through (540A) may be relatively large.

In FIG. 3, only one of the first flow control units 550A, 550B, 550C, and 550D is shown, but the other first flow control units 550B, 550C, and 550D have the same configuration. As it has, repetitive description is omitted.

Meanwhile, according to an embodiment, a discharge plate assembly 510 connected to the fluid discharge passages 540A, 540B, 540C, and 540D may be provided at the base inside the chamber 100.

4 is a plan view of the discharge plate assembly 510 constituting the fluid discharge part 500 in the substrate processing apparatus 1000, FIG. 5 is an exploded perspective view of the discharge plate assembly 510, and FIG. 6 is the discharge plate assembly It is a bottom perspective view of 510.

4 to 6, the discharge plate assembly 510 includes a first discharge plate 520 having a plurality of discharge holes 522 formed thereon, and the plurality of discharge plate assemblies 510 are provided below the first discharge plate 520. A second discharge plate 530 having at least two channels 532A, 532B, 532C, 532D connecting the two discharge holes 522 and the fluid discharge passages 540A, 540B, 540C, 540D to each other may be provided. have.

The first discharge plate 520 may be configured as a circular plate corresponding to the base inside the chamber 100, and a first central hole through which the support bar 320 of the substrate support part 310 passes 524 can be formed. However, the shape of the first discharge plate 520 is not limited thereto and may be modified into an appropriate shape.

A plurality of discharge holes 522 may be formed along an edge or spaced apart from the center by a predetermined distance in the first discharge plate 520. In this case, the discharge hole 522 may be disposed substantially along the edge of the substrate support part 310 at the base inside the chamber 100. Alternatively, when the substrate W is seated on the substrate support part 310, the discharge hole 522 may be disposed on the base substantially along the edge of the substrate W.

When the discharge holes 522 are disposed as described above, the distance between the discharge holes 522 with the substrate W as the center may be as far as possible. In this case, when the fluid inside the chamber 100 is discharged, the discharge direction is changed at a large angle, so that a vortex or turbulence having a large flow energy can be formed more smoothly.

On the other hand, if the above-described fluid discharge passages 540A, 540B, 540C, and 540D are directly connected to the discharge hole 522, a considerable number of fluid discharge passages may be required, and the configuration may be complicated.

Accordingly, the discharge plate assembly 510 may include a second discharge plate 530 under the first discharge plate 520. In this case, at least two channels 532A, 532B, 532C, and 532D for communicating the plurality of discharge holes 522 may be formed in the second discharge plate 530.

The second discharge plate 530 may be composed of a circular plate corresponding to the base inside the chamber 100, and a second central hole through which the support bar 320 of the substrate support part 310 passes (534) can be formed. However, the shape of the second discharge plate 530 is not limited thereto and may be transformed into an appropriate shape.

At least two channels 532A, 532B, 532C, and 532D may be formed along the edge or spaced apart from the center by a predetermined distance in the second discharge plate 530. In this case, the channels 532A, 532B, 532C, and 532D may be formed of a groove formed at a predetermined depth on the upper surface of the second discharge plate 530 or the like.

In this case, the channels 532A, 532B, 532C, and 532D may be configured to communicate with the discharge hole 522 formed in the first discharge plate 520. When at least two channels 532A, 532B, 532C, and 532D are formed in the second discharge plate 530, the plurality of discharge holes 522 may correspond to the number of channels 532A, 532B, 532C, and 532D. It can be divided to correspond. In addition, the divided discharge holes 522 may communicate with the channels 532A, 532B, 532C, and 532D, respectively. Furthermore, each of the channels 532A, 532B, 532C, and 532D may be connected to the fluid discharge passages 540A, 540B, 540C, and 540D connected through the lower portion of the chamber 100, respectively.

Accordingly, the discharge hole 522 of the first discharge plate 520, the channels 532A, 532B, 532C, 532D of the second discharge plate 530, and the fluid discharge passages 540A, 540B, 540C, 540D) A flow path through which fluid is discharged from the processing space 110 is formed.

For example, as shown in the figure, the channels 532A, 532B, 532C, and 532D have four channels, namely, a first channel 532A, a second channel 532B, a third channel 532C, and a fourth channel. In the case of a channel 532D, the discharge hole 522 of the first discharge plate 520 may be divided into four groups and connected to the four channels 532A, 532B, 532C, and 532D, respectively.

Further, the fluid discharge passages 540A, 540B, 540C, and 540D may be connected to the four channels 532A, 532B, 532C, and 532D. At this time, four fluid discharge passages 540A, 540B, 540C, 540D are provided to correspond to the number of the channels 532A, 532B, 532C, 532D, and the fluid discharge passages 540A, 540B, 540C, 540D May be connected to the channels 532A, 532B, 532C, and 532D, respectively.

In addition, although not shown in the drawings, the number of the fluid discharge passages is provided less than the number of the channels, and a configuration in which two or more channels are connected to one fluid discharge passage is also possible.

On the other hand, the fluid discharge passages (540A, 540B, 540C, 540D) are provided with first flow control units (550A, 550B, 550C, 550D), respectively, and discharge through the fluid discharge passages (540A, 540B, 540C, 540D). The flow rate can be adjusted.

Meanwhile, referring to FIG. 1, the fluid discharge part 500 includes a main discharge passage 560 to which the at least two fluid discharge passages 540A, 540B, 540C, and 540D are connected, and the main discharge passage 560 It may further include a main discharge valve 562 for adjusting the degree of opening of.

When at least two fluid discharge passages 540A, 540B, 540C, 540D are provided below the chamber 100, the at least two fluid discharge passages 540A, 540B, 540C, 540D are one main discharge passage It can be connected to 560. At this time, a main discharge valve 562 is connected to the main discharge passage 560 to adjust the opening degree of the main discharge passage 560.

The main discharge passage 560 may be opened or closed by the main discharge valve 562. Further, the main discharge passage 560 may not be completely opened or closed by the main discharge valve 562, but only a certain degree may be opened or closed.

In this case, the main discharge valve 562 may serve to adjust the flow rate of the fluid discharged through the main discharge passage 560. Furthermore, the above-described first flow rate control units 550A, 550B, 550C, and 550D may serve to adjust the direction of the fluid discharged from the chamber 100.

Therefore, in the case of the substrate processing apparatus 1000 according to the present embodiment, when performing a processing process on the substrate W, the main discharge valve 562 is opened to an opening corresponding to a predetermined flow rate. By maintaining, it is possible to continuously discharge the fluid of a predetermined flow rate.

Meanwhile, while the processing process for the substrate W is in progress using a fluid in a supercritical state inside the chamber 100, a fluid may be continuously supplied to the substrate W through the fluid supply unit 600. I can. Accordingly, it is possible to prevent a pressure drop in the processing space 110 due to the fluid discharged through the main discharge passage 560 to maintain the interior of the chamber 100 above a critical pressure.

Meanwhile, in the case of the above-described embodiment, the discharge plate assembly 510 is provided on the base inside the chamber 100, but the present invention is not limited thereto, and at least one of the discharge plates constituting the discharge plate assembly 510 May be integrally formed in the chamber 100.

For example, a plurality of discharge holes are directly formed in the base inside the chamber 100, and the fluid discharge passages 540A, 540B, 540C, 540D are directly connected to the plurality of discharge holes under the chamber 100. I can.

Further, at least two channels for communicating the plurality of discharge holes are further formed in the base under the discharge hole, and the at least two fluid discharge passages 540A, 540B, 540C, 540D are connected to the at least two channels. Each connected configuration is also possible.

7 is a substrate processing apparatus 1000 having four fluid discharge passages 540A, 540B, 540C, and 540D according to an embodiment, using a fluid in a supercritical state inside the chamber 100 In the case of performing the treatment process for W), it shows whether the fluid is heated by the first flow control unit 550A, 550B, 550C, 550D provided in each fluid discharge passage 540A, 540B, 540C, 540D. It is a graph.

In FIG. 7,'A' shows a first flow control unit 550A provided in the first fluid discharge passage 540A, and'B' is a first flow control unit provided in the second fluid discharge passage 540B. (550B),'C' shows the first flow control unit (550C) provided in the third fluid discharge passage (540C), and'D' is the first provided in the fourth fluid discharge passage (540D). It shows the flow control unit (550D).

In addition,'ON' of the flow control unit in the drawings of the present specification is defined as a state in which the fluid is heated by the flow control unit, and'OFF' of the flow control unit is defined as a state in which the fluid is not heated by the flow control unit.

Referring to FIG. 7, first, a first flow rate control unit 550A provided in the first fluid discharge passage 540A for a first time T ₁ heats (ON) the fluid, and the remaining first flow rate control unit (550B, 550C, 550D) may not heat the fluid (OFF).

In this case, as shown in FIG. 8, the relatively largest amount of the fluid supplied to the chamber 100 through the shower head 200 is in the processing space 110 with the first fluid discharge passage 540A. It flows toward the discharge hole 522 of the connected first discharge plate 520.

Therefore, a relatively large amount of the fluid in the processing space 110 is the discharge hole 522 of the first discharge plate 520, the first channel 532A of the second discharge plate 530, and the first fluid discharge passage. It is discharged to the outside through (540A) and the main discharge passage 560.

In addition, a relatively small amount of the fluid supplied to the chamber 100 may be discharged through the remaining second fluid discharge passage 540B, the third fluid discharge passage 540C, and the fourth fluid discharge passage 540D. have.

However, since most of the fluid inside the chamber 100 is discharged through the first fluid discharge passage 540A, the main flow of the fluid inside the chamber 100 is as shown in FIG. 8. It is directed toward the fluid discharge passage 540A.

Subsequently, for a second time (T ₂ ), the first flow control unit 550C provided in the third fluid discharge passage 540C heats the fluid, and the remaining first flow control units 550A, 550B, 550D May not heat the fluid.

At this time, in order to increase the effect of generating vortex or turbulence by changing the direction of the fluid in the processing space 110, the first flow rate control unit 550A provided in the first fluid discharge passage 540A heats the fluid. Then, the first flow rate control unit 550C of the first fluid discharge passage 540A and the third fluid discharge passage 540C facing the substrate W may heat the fluid.

In this case, as shown in FIG. 9, the relatively largest amount of the fluid supplied to the chamber 100 through the shower head 200 is in the processing space 110 and the third fluid discharge passage 540C The direction is changed toward the discharge hole 522 of the connected first discharge plate 520 to form a vortex or turbulence.

Therefore, a relatively large amount of the fluid in the processing space 110 is the discharge hole 522 of the first discharge plate 520, the third channel 532C of the second discharge plate 530, and the third fluid discharge passage. It is discharged to the outside through (540C) and the main discharge passage 560.

In addition, a relatively small amount of the fluid supplied to the chamber 100 may be discharged through the remaining first fluid discharge passage 540A, the second fluid discharge passage 540B, and the fourth fluid discharge passage 540D. have.

However, since most of the fluid inside the chamber 100 is discharged through the third fluid discharge passage 540C, the main flow of the fluid inside the chamber 100 is the third as shown in FIG. It is directed toward the fluid discharge passage 540C.

Subsequently, the first flow control unit 550B provided in the second fluid discharge passage 540B for a third time T ₃ heats the fluid, and the remaining first flow control units 550A, 550C, 550D May not heat the fluid. In addition, the first flow control unit 550D provided in the fourth fluid discharge passage 540D for the fourth time T ₄ heats the fluid, and the remaining first flow control units 550A, 550B, and 550C May not heat the fluid. The above-described first flow rate control units 550A, 550B, 550C, and 550D may each heat the fluid once, and then repeat the above-described process according to the processing process.

Meanwhile, FIG. 10 is a graph showing whether fluid is heated by the first flow rate controllers 550A, 550B, 550C, and 550D according to another embodiment.

Referring to FIG. 10, in the case of the present embodiment, the first flow rate control units 550A, 550B, 550C, and 550D are a first time (T ₁ ), a second time (T ₂ ), and a third time (T _{3 ).} ) And the fourth time (T ₄ ), the fluid may be sequentially heated.

As the fluid is sequentially heated in a clockwise or counterclockwise direction according to the order in which the respective first flow rate control units 550A, 550B, 550C, and 550D are arranged, the flow direction of the fluid in the processing space 110 is It changes constantly and can form a vortex.

Meanwhile, in the case of the substrate processing apparatus 1000 according to the above-described embodiments, vortex or turbulence is generated in the processing space 110 through the fluid discharge unit 500.

11 is a side cross-sectional view illustrating a substrate processing apparatus 2000 according to another exemplary embodiment, and FIG. 12 is an exploded perspective view of a shower head 2200 provided in the substrate processing apparatus 2000.

In the case of the substrate processing apparatus 2000 according to the present embodiment, when the fluid is supplied to the processing space 110 through the fluid supply unit 2600 connected to the upper portion of the chamber 100, the flow rate or the flow rate is changed to Turbulence can be generated. The same reference numerals are used for the same components as in the above-described embodiment.

11 and 12, the substrate processing apparatus 2000 according to the present embodiment includes a fluid storage unit 605 (see Fig. 2) that stores a fluid, and is connected to the fluid storage unit 605 to provide the fluid. A fluid supply network 2610 having a main supply passage 2100 through which the main supply passage 2100 moves and at least two fluid supply passages 2140A, 2140B, 2140C, 2140D branched from the main supply passage 2100, and the at least two A second flow rate control that is provided in the fluid supply passages 2140A, 2140B, 2140C, 2140D and changes the density or viscosity of the fluid passing through the fluid supply passages 2140A, 2140B, 2140C, 2140D to change the flow rate or flow rate of the fluid It is connected to the units 2142A, 2142B, 2142C, 2142D and the at least two fluid supply passages 2140A, 2140B, 2140C, 2140D to provide a processing space 110 for performing a processing process on the substrate W. A chamber 100 may be provided, and a mechanical component such as a valve may not be provided between the flow control units 2142A, 2142B, 2142C, and 2142D and the chamber 100.

In this case, the above-described fluid supply unit 2600 is provided in the fluid storage unit 605, the fluid supply network 2610, and the fluid supply passages 2140A, 2140B, 2140C, 2140D, respectively, and the fluid supply passage It may include a second flow control unit (2142A, 2142B, 2142C, 2142D) for adjusting the density or viscosity of the fluid passing through (2140A, 2140B, 2140C, 2140D).

In this case, the fluid supply network 2610 corresponds to a network that distributes and supplies the fluid stored in the fluid storage unit 605 to the chamber 100, and is connected to the fluid storage unit 605 to move the fluid. It consists of a main supply passage 2100 and at least two fluid supply passages 2140A, 2140B, 2140C, and 2140D branching from the main supply passage 2100.

On the other hand, the second flow rate control unit (2142A, 2142B, 2142C, 2142D) by adjusting the density or viscosity of the fluid, it is possible to adjust the flow rate or flow rate passing through each fluid supply passage (2140A, 2140B, 2140C, 2140D). In this case, the second flow rate controllers 2142A, 2142B, 2142C, and 2142D may adjust the density or viscosity by controlling the temperature of the fluid.

In this embodiment, the second flow rate controller 2142A, 2142B, 2142C, 2142D adjusts the density or viscosity of the fluid by controlling the temperature of the fluid. In this case, the fluid heating of the second flow rate control unit 2142A, 2142B, 2142C, 2142D may be changed at a predetermined or random cycle.

Here, the configuration of the second flow rate control unit (2142A, 2142B, 2142C, 2142D) is similar to the configuration of the first flow rate control unit (550A, 550B, 550C, 550D) described above, a repeated description will be omitted.

For example, when the substrate processing apparatus 2000 has four fluid supply passages 2140A, 2140B, 2140C, and 2140D, the second flow rate control unit 2142A of the first fluid supply passage 2140A is The showerhead 2200 is heated (ON) and when the second flow rate control units 2142B, 2142C, 2142D of the remaining three fluid supply passages 2140B, 2142C, 2142D do not heat the fluid (OFF). At, a relatively largest amount of fluid may be supplied through a region to which the first fluid supply passage 2140A is connected.

In this case, the second flow rate control unit 2142A of the first fluid supply channel 2140A does not heat the fluid at a predetermined or random cycle, and the second flow rate control unit 2142C of the third fluid supply channel 2140C When the fluid is heated, the area in which the fluid is supplied from the shower head 2200 toward the substrate W is changed, so that vortex or turbulence can be generated in the processing space 110 of the chamber 100. .

Meanwhile, at least two partitioned buffer spaces 2230A, 2230B, 2230C, 2230D may be formed in the shower head 2200, and the at least two fluid supply passages 2140A, 2140B, 2140C, 2140D It may be connected to the two buffer spaces 2230A, 2230B, 2230C, and 2230D, respectively.

For example, the shower head 2200 is disposed under the upper plate 2210 and the upper plate 2210, a plurality of through holes 2222 are formed, and at least two between the upper plate 2210 and the upper plate 2210 A lower plate 2220 providing two buffer spaces 2230A, 2230B, 2230C, and 2230D may be provided.

In this case, at least two partition walls 2300A, 2300B, 2300C, and 2300D may be provided between the upper plate 2210 and the lower plate 2220.

As shown in FIG. 12, when four buffer spaces 2230A, 2230B, 2230C, and 2230D are provided in the shower head 2200, four partition walls between the upper plate 2210 and the lower plate 2220 ( 2300A, 2300B, 2300C, 2300D) may be disposed. In addition, four fluid supply passages 2140A, 2140B, 2140C, 2140D may be provided corresponding to the number of the buffer spaces 2230A, 2230B, 2230C, 2230D, and the fluid supply passages 2140A, 2140B, 2140C , 2140D) may be connected to the buffer spaces 2230A, 2230B, 2230C, and 2230D, respectively.

Further, although not shown in the drawing, the number of fluid supply passages is provided less than the number of buffer spaces, and a configuration in which two or more buffer spaces are connected to one fluid supply passage is also possible.

Meanwhile, as shown in FIG. 11, the fluid supply unit 2600 includes a main supply passage 2100 connected to the at least two fluid supply passages 2140A, 2140B, 2140C, and 2140D, and the main supply passage 2100. It may further include a main supply valve 2120 for adjusting the opening degree of the.

When at least two fluid supply passages 2140A, 2140B, 2140C, and 2140D are provided on the upper part of the chamber 100, the main supply passage 2100 is the at least two fluid supply passages 2140A, 2140B, 2140C, 2140D) can be connected.

That is, the above-described fluid storage unit 605 and the main supply passage 2100 are connected, and the main supply passage 2100 is branched into at least two fluid supply passages 2140A, 2140B, 2140C, 2140D, and the At least two fluid supply passages 2140A, 2140B, 2140C, and 2140D are connected to the chamber 100.

In this case, the main supply passage 2100 is provided with a main supply valve 2120 for adjusting the flow rate of the fluid by adjusting the opening degree of the main supply passage 2100.

In this case, a filter unit 2122 may be provided in the main supply passage 2100 at a rear end of the main supply valve 2120. The filter unit 2122 filters foreign substances such as the particles when particles, etc. are generated by the opening and closing operation of the main supply valve 2120, so that the foreign substances such as the particles follow the fluid to the chamber 100 It plays a role in preventing it from being supplied to the inside. In this case, the filter unit 2122 may be disposed between the main supply valve 2120 and the second flow rate control unit 2142A, 2142B, 2142C, 2142D.

Accordingly, the main supply passage 2100 may be opened or closed by the main supply valve 2120. Further, the main supply passage 2100 may not be completely opened or closed by the main supply valve 2120, but only a certain degree may be opened or closed.

In this case, the main supply valve 2120 may play a role of adjusting the flow rate of the fluid supplied through the main supply passage 2100. Further, the second flow rate control units 2142A, 2142B, 2142C, and 2142D described above may serve to adjust the direction of the fluid supplied from the shower head 2200.

Accordingly, in the case of the substrate processing apparatus 2000 according to the present embodiment, when performing a processing process on the substrate W, the main supply valve 2120 is opened to an opening corresponding to a predetermined flow rate. By maintaining, it is possible to continuously supply a fluid of a predetermined flow rate. In this case, the second flow rate control unit 2142A, 2142B, 2142C, 2142D is adjusted to heat the fluid at a predetermined or random cycle, so that the direction of the fluid supplied from the shower head 2200 of the chamber 100 is changed. Can be adjusted to

In the case of the substrate processing apparatus 2000 according to the present embodiment, foreign substances such as particles that may be generated in the main supply valve 2120 are removed by the filter unit 2122, and the second flow rate control unit 2142A, Mechanical components such as a valve may be omitted between the 2142B, 2142C, and 2142D) and the chamber 100 to prevent foreign substances such as particles from flowing into the chamber 100.

13 is a substrate processing apparatus 2000 having four fluid supply passages (2140A, 2140B, 2140C, 2140D) and four fluid discharge passages (540A, 540B, 540C, 540D) in the chamber 100 In the case of performing the processing process on the substrate (W) using the fluid in the supercritical state, the second flow rate control unit (2142A, 2142B, 2142C, 2142D) provided in each fluid supply passage (2140A, 2140B, 2140C, 2140D) ) And the first flow rate control unit (550A, 550B, 550C, 550D) provided in each of the fluid discharge passages (540A, 540B, 540C, 540D) is a graph showing whether the fluid is heated. Figure 13 (A) is a graph showing whether or not the fluid heating of the second flow control unit (2142A, 2142B, 2142C, 2142D), Figure 13 (B) is the first flow control unit (550A, 550B, 550C, 550D) is a graph showing whether the fluid is heated.

Referring to FIG. 13, first, the second flow rate control unit 2142C of the third fluid supply channel 2140C heats the fluid during a first time T ₁ , and the remaining second flow rate control units 2142A and 2142B, 2142D) may not heat the fluid. In addition, the first flow rate control unit 550A of the first fluid discharge passage 540A facing the third fluid supply passage 2140C and the substrate W during the first time T ₁ Heats the fluid, and the remaining first flow rate control units 550B, 550C, and 550D may not heat the fluid.

In this case, as shown in FIG. 14, the relatively largest amount of the fluid may be supplied to the third buffer space 2230C of the shower head 2200 through the third fluid supply passage 2140C. Subsequently, the fluid may be supplied from the third buffer space 2230C toward the substrate W through a lower through hole 2222.

At this time, the flow resistance of the third fluid supply passage 2140C and the first fluid discharge passage 540A arranged diagonally around the processing space 110 is relatively smallest.

Accordingly, the relatively largest amount of fluid supplied from the third buffer space 2230C toward the substrate W through the through hole 2222 at the bottom is passed through the upper surface of the substrate W to the first discharge plate. It is discharged to the outside through the discharge hole 522 of 520, the first channel 532A of the second discharge plate 530, the first fluid discharge passage 540A and the main discharge passage 560.

That is, since most of the fluid inside the chamber 100 is discharged from the third fluid supply passage 2140C through the substrate W through the first fluid discharge passage 540A, as shown in FIG. As described above, the main flow of the fluid in the chamber 100 is directed from the third fluid supply channel 2140C to the first fluid discharge channel 540A through the substrate W.

Subsequently, the second flow rate control unit 2142A of the first fluid supply channel 2140A heats the fluid during the second time T ₂ , and the remaining second flow rate control units 2142B, 2142C, 2142D May not be heated. In addition, during the second time (T ₂ ), the first flow control unit 550C of the third fluid discharge passage 540C heats the fluid, and the remaining first flow control units 550A, 550B, and 550D May not be heated.

In this case, as shown in FIG. 15, the relatively largest amount of the fluid may be supplied to the first buffer space 2230A of the shower head 2200 through the first fluid supply passage 2140A. Subsequently, the fluid may be supplied from the first buffer space 2230A to the substrate W through the lower through hole 2222.

At this time, the flow resistance of the first fluid supply passage 2140A and the third fluid discharge passage 540C arranged diagonally around the processing space 110 is relatively smallest.

Therefore, the relatively largest amount of the fluid supplied from the first buffer space 2230A to the substrate W through the through hole 2222 at the bottom is passed through the upper surface of the substrate W to the first discharge plate. It is discharged to the outside through the discharge hole 522 of 520, the third channel 532C of the second discharge plate 530, the third fluid discharge passage 540C, and the main discharge passage 560.

That is, since most of the fluid inside the chamber 100 is discharged from the first fluid supply passage 2140A through the substrate W through the third fluid discharge passage 540C, as shown in FIG. As shown, the main flow of the fluid in the chamber 100 is directed from the first fluid supply passage 2140A to the third fluid discharge passage 540C through the substrate W.

In this way, the second flow control units 2142A, 2142B, 2142C, 2142D provided in the fluid supply passages 2140A, 2140B, 2140C, 2140D and the fluid discharge passages 540A, 540B, 540C, 540D 1 In the case of controlling whether or not the flow control unit (550A, 550B, 550C, 550D) heats the fluid, the fluid supply flow paths 2140A, 2140B, 2140C, 2140D arranged diagonally around the processing space 110 If the flow resistance of the discharge passages 540A, 540B, 540C, 540D is adjusted to be relatively small, the flow of the fluid supplied to the substrate W is changed into vortex or turbulence, and the upper surface of the substrate W is dead. Zone generation can be suppressed.

Meanwhile, in the case of the embodiment according to FIGS. 11 and 12, both the fluid supply unit 2600 and the fluid discharge unit 500 are configured to generate eddy currents or turbulence, but are not limited thereto. For example, it is also possible to include only the fluid supply unit 2600 that changes the flow rate or flow rate of the fluid above the chamber 100. Consequently, at least one of the fluid supply unit and the fluid discharge unit provided in the chamber 100 is provided with a flow rate control unit that changes the flow rate or flow rate of the fluid, and changes the density or viscosity of the fluid to the processing space 110 Vortex or turbulence can be generated at

In this case, the fluid supply unit 2600 includes at least two fluid supply passages 2140A, 2140B, 2140C, 2140D connected to an upper portion of the chamber 100, and the fluid discharge unit 600 includes the chamber 100 It includes at least two fluid discharge passages (540A, 540B, 540C, 540D) connected to the flow control unit, the fluid supply passage (2140A, 2140B, 2140C, 2140D) and the fluid discharge passage (540A, 540B, 540C, 540D) ) Is provided in at least one place to control the temperature of the fluid to control the density or viscosity of the fluid.

However, if the flow rate or the flow rate is changed only at the fluid supply unit, a phenomenon in which the flow energy of the fluid vortex or turbulent flow decreases before reaching the substrate due to the high pressure inside the chamber. It may be advantageous to vary the flow rate or flow rate of the fluid in the section. That is, it may be advantageous to generate eddy currents or turbulence by changing the flow rate or the flow rate at a side of the fluid supply unit and the fluid discharge unit having a relatively closer distance to the substrate.

In the above, description has been made with reference to preferred embodiments of the present invention, but those skilled in the art may variously modify and change the present invention within the scope not departing from the spirit and scope of the present invention described in the following claims. You can do it. Therefore, if the modified implementation basically includes the elements of the claims of the present invention, all should be considered to be included in the technical scope of the present invention.

100: chamber
110: processing space
200: shower head
310: substrate support
500: fluid outlet
600: fluid supply unit
1000: substrate processing device

Claims (17)

A chamber that provides a processing space for performing a processing process on a substrate using a fluid in a supercritical state;
A substrate support part provided inside the chamber to support the substrate;
A fluid supply unit supplying a fluid into the chamber;
A fluid discharge unit for discharging the fluid from the chamber; And
And a flow rate control unit provided on at least one of the fluid supply unit and the fluid discharge unit to change the density or viscosity of the fluid to change the flow rate supplied to the chamber or the flow rate discharged from the chamber. Processing device. The method of claim 1,
The flow control unit to change the density or viscosity of the fluid by adjusting the temperature of the fluid. The method of claim 1,
By changing the density or viscosity of the fluid by the flow control unit
A substrate processing apparatus comprising changing a direction of supplying fluid into the chamber or a direction of discharging fluid from the chamber. The method of claim 1,
The fluid supply unit includes at least two fluid supply passages connected to the upper part of the chamber, and the flow control unit is provided in the fluid supply passage to adjust the temperature of the fluid to adjust the density or viscosity of the fluid. Substrate processing device. The method of claim 1,
The fluid discharge part comprises at least two fluid discharge passages connected to the chamber, and the flow control part is provided in the fluid discharge passage to adjust the temperature of the fluid to control the density or viscosity of the fluid. Processing device. The method according to claim 4 or 5,
The flow control unit
And a heating and cooling unit disposed in at least one of the fluid supply passage and the fluid discharge passage to heat or cool the fluid. The method of claim 6,
The flow control unit
And a shaft pipe portion formed at at least one of the fluid supply passage and the fluid discharge passage, and the heating and cooling portion is disposed adjacent to the shaft pipe portion. The method of claim 7,
The heating/cooling unit heats the fluid at a predetermined or random cycle to increase or decrease the density or viscosity of the fluid to adjust the flow rate passing through the shaft pipe. The method of claim 5,
A substrate processing apparatus, wherein a plurality of discharge holes are formed in the chamber, and the fluid discharge passage is connected to the plurality of discharge holes. The method of claim 5,
A first discharge plate having a plurality of discharge holes formed in the base of the chamber, and a second discharge having at least two channels provided below the first discharge plate and connecting the plurality of discharge holes with the fluid discharge passage. A substrate processing apparatus comprising a plate. The method of claim 5,
A main discharge passage to which the at least two fluid discharge passages are connected, and a main discharge valve for adjusting an opening degree of the main discharge passage,
The substrate processing apparatus, characterized in that the main discharge valve maintains an open state with an opening corresponding to a predetermined flow rate during the processing process for the substrate. The method of claim 4,
And a showerhead provided at an upper portion of the chamber and having at least two partitioned buffer spaces, wherein the at least two fluid supply passages are respectively connected to the at least two buffer spaces. The method of claim 4,
Further comprising a main supply passage connected to the at least two fluid supply passages, and a main supply valve for adjusting an opening degree of the main supply passage,
The substrate processing apparatus, wherein the main supply valve maintains an open state with an opening corresponding to a predetermined flow rate during the processing process for the substrate. A fluid storage unit for storing fluid;
A fluid supply network connected to the fluid storage unit and including a main supply passage through which the fluid moves, and at least two fluid supply passages branching from the main supply passage;
A flow rate control unit provided in the at least two fluid supply passages to change the density or viscosity of the fluid passing through the fluid supply passages to change the flow rate or flow rate of the fluid; And
A chamber connected to the at least two fluid supply passages to provide a processing space for performing a processing process on a substrate; and
A substrate processing apparatus, characterized in that no valve is provided between the flow control unit and the chamber. The method of claim 14,
Further comprising a main supply valve provided in the main supply passage to control the flow rate of the fluid supplied through the main supply passage, and a filter unit provided at the rear end of the main supply valve in the main supply passage to filter foreign substances. A substrate processing apparatus, characterized in that. The method of claim 14,
The flow control unit
And a heat-cooling unit disposed in the fluid supply passage to heat or cool the fluid. The method of claim 16,
The flow control unit
And a shaft pipe portion formed in the fluid supply passage, and the heating and cooling portion is disposed adjacent to the shaft pipe portion.

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