KR20200049223A - Display apparatus - Google Patents

Abstract

A display device according to an embodiment of the present application comprises: a substrate including a plurality of light emitting regions, a display region having a cathode contact region adjacent to at least one light emitting region, and a pad region having a pad electrode; a thin film transistor disposed in each of the plurality of light emitting regions; a planarization layer covering the thin film transistor; an anode electrode disposed on the planarization layer and electrically connected to the thin film transistor; a light emitting layer disposed on the anode electrode; a cathode electrode disposed on the light emitting layer; and a contact pad disposed on the cathode contact region on the planarization layer and includes a side surface contact portion in contact with the cathode electrode, wherein the middle portion of the side surface contact portion may be concave based on the thickness direction of the contact pad.

Description

Display device {DISPLAY APPARATUS}

The present application relates to a display device.

The display device is widely used as a display screen of a notebook computer, a tablet computer, a smart phone, a portable display device, and a portable information device, in addition to the display screen of a television or monitor.

In recent years, research and development of a light emitting display device using a micro light emitting element is in progress, and such a light emitting display device has been spotlighted as a next generation display because it has high image quality and high reliability. Such a light emitting display device is a self-luminous element, has low power consumption, high speed response speed, high light emission efficiency, high luminance, and wide viewing angle. Such a light emitting display device is mounted on an electronic product or a home appliance such as a television, monitor, laptop computer, smart phone, tablet computer, electronic pad, wearable device, watch phone, portable information device, navigation, or vehicle control display device. It is attracting attention as a next-generation display that can be used as a display that displays.

The light emitting display device displays an image in a top emission method or a bottom emission method.

A conventional top emission type light emitting display device includes a pixel circuit including a driving thin film transistor disposed in a sub-pixel region, an anode electrode connected to the driving thin film transistor, a light emitting layer disposed on the anode electrode, and a cathode electrode disposed on the light emitting layer. It can contain. At this time, the anode electrode is made of a reflective metal material, and the cathode electrode is made of a transparent conductive metal material to improve transmittance.

However, the conventional upper light emitting display device has a problem in that luminance uniformity is lowered by a voltage drop (IR drop) of the cathode voltage due to a high resistance of the cathode electrode made of a transparent conductive metal material.

An object of the present application is to provide a display device capable of preventing luminance unevenness due to a voltage drop (IR drop) of the cathode voltage supplied to the cathode electrode by directly contacting the cathode electrode with a side surface of the contact pad.

In addition, the present application provides a display device capable of reducing the number of mask processes and controlling the number of areas in which the cathode electrode and the contact pad are directly contacted by forming the concave portion of the contact pad in a recessed manner based on the thickness direction of the contact pad. Let this be a technical task.

In addition, the present application provides a display device capable of increasing the light emitting area by reducing the area of the area where the cathode electrode and the contact pad are in direct contact by forming the middle portion of the contact pad to be recessed based on the thickness direction of the contact pad. Let this be a technical task.

In addition, the present application is an indication that the middle portion of the contact pad is concave based on the thickness direction of the contact pad, so that the side contact portion of the contact pad and the vent portion of the cathode electrode can be contacted without applying a separate voltage to the cathode electrode. It is a technical task to provide a device.

A display device according to the present application includes a plurality of light emitting regions, a display region having a cathode contact region adjacent to at least one light emitting region, and a pad region having a pad electrode, a thin film disposed on each of the plurality of light emitting regions A transistor, a planarization layer covering the thin film transistor, an anode electrode disposed on the planarization layer and electrically connected to the thin film transistor, a light emitting layer disposed on the anode electrode, a cathode electrode disposed on the light emitting layer, and a cathode contact region on the planarization layer , A contact pad including a side contact portion in contact with the cathode electrode, and the middle portion of the side contact portion may be concave based on the thickness direction of the contact pad.

Specific details of other examples are included in the detailed description and drawings.

The display device according to the present application may prevent luminance unevenness due to a voltage drop (IR drop) of the cathode voltage supplied to the cathode electrode by directly contacting the cathode electrode with a side surface of the contact pad.

In the display device according to the present application, the middle portion of the contact pad is formed to be concave based on the thickness direction of the contact pad, thereby reducing the number of mask processes and controlling the number of areas where the cathode electrode and the contact pad are in direct contact.

In the display device according to the present application, the middle portion of the contact pad is formed to be concave based on the thickness direction of the contact pad, thereby reducing the area of the area where the cathode electrode and the contact pad are in direct contact to increase the light emitting area.

In the display device according to the present application, the middle portion of the contact pad is formed concave based on the thickness direction of the contact pad, so that the side contact portion of the contact pad and the vent portion of the cathode electrode can be contacted without applying a separate voltage to the cathode electrode. have.

In addition to the effects of the present application mentioned above, other features and advantages of the present application are described below, or will be clearly understood by those skilled in the art from the description and description.

1 is a plan view illustrating a display device according to an example of the present application.
FIG. 2 is an enlarged view of region A of FIG. 1.
3 is another enlarged view of region A of FIG. 1.
4 is a cross-sectional view of the cutting line I-I 'of FIG. 2 in the display device according to the first exemplary embodiment of the present application.
5 is an enlarged view of region C of FIG. 4.
6 is an enlarged view of region D of FIG. 5.
7 is a process cross-sectional view schematically showing a method of manufacturing a display device according to a first embodiment of the present application, which is a process cross-sectional view of the cutting line I-I 'shown in FIG. 2.
8 is a cross-sectional view of the cutting line I-I 'of FIG. 2 in the display device according to the second exemplary embodiment of the present application.
9 is an enlarged view of region F of FIG. 8.
10 is an enlarged view of region G of FIG. 9.

Advantages and features of the present application, and a method of achieving them will become apparent by referring to examples described below in detail together with the accompanying drawings. However, the present invention is not limited to the examples disclosed below, but will be implemented in various different forms, only the examples allow the disclosure of the present invention to be complete, and to those skilled in the art to which the present invention pertains. It is provided to fully inform the scope of the invention, and the invention is only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for explaining examples of the present application are exemplary, and the present invention is not limited to the illustrated matters. The same reference numerals refer to the same components throughout the specification. In addition, in the description of the present application, when it is determined that the detailed description of the related known technology may unnecessarily obscure the subject matter of the present application, the detailed description will be omitted. When 'include', 'have', 'consist of', etc. mentioned in the present application are used, other parts may be added unless '~ man' is used. When a component is expressed as a singular number, the plural number is included unless otherwise specified.

In interpreting the components, it is interpreted as including the error range even if there is no explicit description.

In the case of the description of the positional relationship, for example, when the positional relationship of two parts is described as '~ top', '~ upper', '~ bottom', '~ side', etc., 'right' Alternatively, one or more other parts may be located between the two parts unless 'direct' is used.

The first, second, etc. are used to describe various components, but these components are not limited by these terms. These terms are only used to distinguish one component from another component. Therefore, the first component mentioned below may be the second component within the technical spirit of the present invention.

In describing the components of the present application, terms such as first and second may be used. These terms are only for distinguishing the component from other components, and the essence, order, order, or number of the component is not limited by the term. When a component is described as being "connected", "coupled" or "connected" to another component, the component may be directly connected to or connected to the other component, but different components between each component It will be understood that the "intervenes" may be, or each component may be "connected", "coupled" or "connected" through other components.

Accordingly, the display device in the present application may include a narrow display device itself such as an LCM, an LED module, and even a set device that is an application product or an end consumer device including an LCM, an LED module, or the like.

For example, when the display panel is an electroluminescent (LED) display panel, it may include a plurality of gate lines and data lines, and pixels formed in an intersection region between the gate lines and the data lines. Then, an array substrate including a thin film transistor which is an element for selectively applying voltage to each pixel, a light emitting element (LED) layer on the array substrate, and an encapsulation substrate or phosphor disposed on the array substrate to cover the light emitting element layer. Encapsulation (Encapsulation) may be configured to include a substrate. The encapsulation substrate protects the thin film transistor and the light emitting device layer from external impact, and can prevent moisture or oxygen from penetrating the light emitting device layer. In addition, the layer formed on the array substrate may include an inorganic light emitting layer, for example, a nano-sized material layer or a quantum dot.

In addition, the display panel may further include a backing such as a metal plate attached to the display panel. It is not limited to the metal plate, and other structures may also be included.

Each of the features of the various examples of the present application may be partially or totally combined or combined with each other, technically various interlocking and driving may be possible, and each of the examples may be independently implemented with respect to each other or may be implemented together in an associative relationship. .

Hereinafter, an example of the present application will be described with reference to the accompanying drawings and examples.

1 is a plan view illustrating a display device according to an example of the present application.

Referring to FIG. 1, the display device 100 includes a substrate 110, a pixel array layer 190, a display driving circuit unit 210, and a scan driving circuit unit 220.

The substrate 110 is a base substrate, and may be a flexible substrate. For example, the substrate 110 may include a transparent polyimide material. Considering that a high temperature deposition process is performed on the polyimide substrate 110, a polyimide excellent in heat resistance capable of withstanding high temperature may be used. The polyimide substrate 110 may be formed by curing a polyimide resin coated with a predetermined thickness on the top surface of the sacrificial layer provided on the carrier glass substrate. Here, the carrier glass substrate may be separated from the substrate 110 by the release of the sacrificial layer by a laser release process. In addition, the sacrificial layer may be made of amorphous silicon (a-Si) or silicon nitride film (SiNx).

According to an example, the substrate 110 may be a glass substrate. For example, the substrate 110 may include silicon oxide (SiO2) or aluminum oxide (Al2O3) as a main component.

The substrate 110 may include a display area AA and a non-display area NA. The display area AA is an area in which an image is displayed, and may be defined in a central portion of the substrate 110. Here, the display area AA may correspond to the active area of the pixel array layer 190. For example, the display area AA may be formed of a plurality of pixels (not shown) formed for each pixel area crossed by a plurality of gate lines (not shown) and a plurality of data lines (not shown). Here, each of the plurality of pixels may be defined as an area of a minimum unit that emits light.

The non-display area NA is an area in which an image is not displayed, and may be defined at an edge portion of the substrate 110 surrounding the display area AA. According to an example, the non-display area NA may include a pad area having at least one pad electrode.

The pixel array layer 190 includes a thin film transistor layer and a light emitting device layer. The thin film transistor layer may include a thin film transistor, a gate insulating film, an interlayer insulating film, a passivation layer, and a planarization layer. In addition, the light emitting device layer may include a plurality of light emitting devices and a plurality of banks. A detailed configuration of the pixel array layer 190 will be described in detail in FIG. 4 below.

The display driving circuit unit 210 is connected to a pad electrode provided in the non-display area NA of the substrate 110 to display an image corresponding to image data supplied from the display driving system to each pixel. According to an example, the display driving circuit unit 210 may include a plurality of circuit films 211, a plurality of data driving integrated circuits 213, a printed circuit board 215, and a timing control unit 217.

Input terminals provided on one side of each of the plurality of circuit films 211 are attached to the printed circuit board 215 by a film attaching process, and output terminals provided on the other side of each of the plurality of circuit films 211 are formed by a film attaching process. It can be attached to the pad portion. According to an example, each of the plurality of circuit films 211 may be embodied as a flexible circuit film and bent to reduce the bezel area of the display device 100. For example, the plurality of circuit films 211 may be formed of a tape carrier package (TCP) or a chip on flexible board or chip on film (COF).

Each of the plurality of data driving integrated circuits 213 may be individually mounted on each of the plurality of circuit films 211. Each of the plurality of data driving integrated circuits 213 receives pixel data and data control signals provided from the timing control unit 217, and converts pixel data into analog-specific pixel-specific data signals according to the data control signals, and corresponds to Data lines can be supplied.

The printed circuit board 215 supports the timing control unit 217 and may transmit signals and power between components of the display driving circuit unit 210. The printed circuit board 215 may provide signals and driving power supplied from the timing control unit 217 to the plurality of data driving integrated circuits 213 and the scan driving circuit unit 220 to display an image on each pixel. To this end, signal transmission wiring and various power wirings may be provided on the printed circuit board 215. For example, the printed circuit board 215 may be composed of one or more according to the number of circuit films 211.

The timing control unit 217 may be mounted on the printed circuit board 215 and receive image data and timing synchronization signals provided from the display driving system through a user connector provided on the printed circuit board 215. The timing control unit 217 may align the image data according to the pixel arrangement structure based on the timing synchronization signal to generate pixel data, and provide the generated pixel data to the corresponding data driving integrated circuit 213. Then, the timing control unit 217 generates a data control signal and a scan control signal based on the timing synchronization signal, controls the driving timing of each of the plurality of data driving integrated circuits 213 through the data control signal, and scan control The driving timing of the scan driving circuit unit 220 may be controlled through a signal. Here, the scan control signal may be supplied to the corresponding scan driving circuit unit 220 through the first or / and last flexible circuit film among the plurality of circuit films 211 and the non-display area NA of the substrate 110. .

The scan driving circuit unit 220 may be provided in the non-display area NA of the substrate 110. The scan driving circuit unit 220 may generate a scan signal according to the scan control signal provided from the display driving circuit unit 210 and supply the scan signal to a scan line corresponding to a set order. According to an example, the scan driving circuit unit 220 may be formed in the non-display area NA of the substrate 110 together with the thin film transistor.

FIG. 2 is an enlarged view of region A of FIG. 1.

Referring to FIG. 2, the substrate 110 may include a display area AA and a non-display area NA, and the non-display area NA may include a pad area PA having at least one pad electrode PE. ). The display area AA may include a plurality of unit pixels UP having a plurality of sub-pixels SP, and each of the plurality of unit pixels UP may include a plurality of light-emitting areas EA, and at least A cathode contact area CCA adjacent to one emission area EA may be included.

Each of the sub-pixels SP may include an emission area EA. Specifically, the anode electrode AE of each of the plurality of sub-pixels SP may be disposed in each opening of the plurality of sub-pixels SP. Specifically, the anode electrode AE may be disposed on the planarization layer 160 of the display area AA, and may be surrounded by a bank B defining an opening of each of the sub-pixels SP. . For example, a portion of the anode electrode AE may be covered by the bank B, and another portion of the anode electrode AE may be exposed through the opening without being covered by the bank B. That is, each of the plurality of sub-pixels SP may emit light through the anode electrode AE exposed through the opening. Accordingly, the opening of each of the sub-pixels SP may be defined as the emission area EA of the sub-pixel SP.

Each of the plurality of sub-pixels SP may be defined as an area of a minimum unit emitting light. In addition, each of the plurality of unit pixels UP may include at least three sub-pixels SP adjacent to each other. For example, each of the plurality of unit pixels UP may include a red sub-pixel, a green sub-pixel, and a blue sub-pixel. Furthermore, each of the plurality of unit pixels UP may further include a white sub-pixel.

The contact pad CP may be disposed on the planarization layer 160 of the cathode contact region CCA. Specifically, the contact pad CP may be disposed on the planarization layer 160 to be spaced apart from the anode electrode AE, and a part and a top surface of the contact pad CP may be exposed to the cathode contact area CCA. . In addition, another part of the upper surface of the contact pad CP that is not exposed to the cathode contact area CCA may be covered by the bank B. That is, the bank B is disposed on the planarization layer 160 to partition the plurality of light emitting regions EA and the cathode contact region CCA.

According to an example, the cathode contact area CCA may be grouped into a plurality of light emitting areas EA in a predetermined unit, and may be disposed to correspond to each light emitting area EA in a predetermined unit. For example, the cathode contact area CCA may be disposed to correspond to one unit pixel UP or three sub-pixels SP. For another example, the cathode contact area CCA may be disposed to correspond to each sub-pixel SP connected to one scan line. That is, the display device 100 according to the present application may adjust the number of cathode contact regions CCA in consideration of the number, area, and design cost issues of the area where the cathode electrode and the contact pad CP are in direct contact.

The pad electrode PE may be formed on the passivation layer 150 of the pad area PA, and may be made of the same material as the anode electrode AE and the contact pad CP. For example, the planarization layer 160 is formed only in the display area AA, may not be formed in the pad area PA, and the pad electrode PE may be directly formed on the passivation layer 150. The pad electrode PE may provide image data supplied from the display driving circuit unit 210 to each of the plurality of sub-pixels SP.

3 is another enlarged view of region A of FIG. 1. Here, the display device of FIG. 3 is different from that of the display device of FIG. 2 and the cathode contact area CCA, and the same configuration as the above-described configuration will be briefly described or omitted.

Referring to FIG. 3, the substrate 110 may include a display area AA and a pad area PA. In addition, the display area AA may include a plurality of unit pixels UP having a plurality of sub-pixels SP, and each of the plurality of sub-pixels SP may include an emission area EA and an emission area ( EA) and adjacent cathode contact regions (CCA).

According to an example, the cathode contact area CCA may be disposed to correspond to each of the plurality of light emitting areas EA. For example, the number of cathode contact areas CCA may be the same as the number of the plurality of sub-pixels SP. As described above, the display device 100 according to the present application forms a plurality of cathode contact regions CCA corresponding to each of the plurality of sub-pixels SP, so that the cathode electrode and the contact pad CP are in direct contact. By increasing the number and area, it is possible to improve the effect of preventing the voltage drop (IR drop) of the cathode voltage supplied to the cathode electrode.

4 is a cross-sectional view taken along line I-I 'of FIG. 2 in the display device according to the first exemplary embodiment of the present application. 5 is an enlarged view of region C of FIG. 4, and FIG. 6 is an enlarged view of region D of FIG. 5.

4 to 6, the display device 100 includes a substrate 110, a light blocking layer LS, a buffer layer 120, a thin film transistor T, a gate insulating film 130, an interlayer insulating film 140, and passivation Layer 150, planarization layer 160, light emitting device E, bank B, encapsulation layer 170, first and second auxiliary power lines EVSS1, EVSS2, auxiliary wiring AL, contact pad (CP), a signal pad (SP), a pad auxiliary electrode (PAE), a pad electrode (PE), and a storage capacitor (Cst).

The substrate 110 is a base substrate, and may be a transparent flexible substrate that can be bent or bent. According to an example, the substrate 110 may include a transparent polyimide material, but is not limited thereto and may be made of a transparent plastic material such as polyethylene terephthalate. In addition, considering that a high temperature deposition process is performed on the polyimide substrate 110, a polyimide excellent in heat resistance capable of withstanding high temperature may be used.

According to an example, the substrate 110 may be a glass substrate. For example, the substrate 110 may include silicon dioxide (SiO2) or aluminum oxide (Al2O3) as a main component.

The light blocking layer LS may be disposed on the substrate 110 so as to overlap the thin film transistor T. For example, the light blocking layer LS may be formed by depositing a metal on the substrate 110 and then performing exposure patterning. According to an example, the light shielding layer LS may be made of a metal such as molybdenum (Mo), aluminum (Al), chromium (Cr), and silver (Ag) or an alloy thereof, but is not limited thereto. It can be implemented with various materials. In addition, the light blocking layer LS may include a lower light blocking layer LS1 and an upper light blocking layer LS2.

The buffer layer 120 may be disposed on the substrate 110 and the light blocking layer LS. According to an example, the buffer layer 120 may be formed by stacking a plurality of inorganic films. For example, the buffer layer 120 may be formed of a multilayer film in which one or more inorganic films of a silicon oxide film (SiOx), a silicon nitride film (SiNx), and a silicon oxynitride film (SiON) are stacked. The buffer layer may be formed on the entire upper surface of the substrate 110 to block moisture from penetrating the light emitting device E through the substrate 110. Therefore, the buffer layer 120 may include a plurality of inorganic films, thereby improving the water vapor transmission rate (WVTR) of the panel.

The thin film transistor T may be disposed on the buffer layer 120 to overlap each of the plurality of light emitting regions EA. According to an example, the thin film transistor T may include an active layer ACT, a gate electrode GE, a source electrode SE, and a drain electrode DE.

The active layer ACT may be provided in the display area AA of the substrate 110. The active layer ACT is disposed on the buffer layer 120 and may overlap the gate electrode GE, the source electrode SE, and the drain electrode DE. The active layer ACT may directly contact the source electrode SE and the drain electrode DE, and may face the gate electrode GE and the gate insulating layer 130 therebetween.

According to an example, the active layer ACT may include a channel region ACT1 and a source / drain region ACT2. The channel region ACT1 is formed in the central region of the active layer ACT, and the source / drain region ACT2 may be formed side by side with the channel region ACT1 interposed therebetween. The channel region ACT1 may overlap the gate electrode GE, and the source / drain region ACT2 may overlap the source electrode SE and the drain electrode DE.

The gate insulating layer 130 may be provided on the active layer ACT. In addition, the gate insulating layer 130 may be provided on the buffer layer 120. Specifically, the gate insulating layer 130 may be disposed on the channel region ACT1 of the active layer ACT, and insulate the active layer ACT from the gate electrode GE.

The gate electrode GE may be provided on the gate insulating layer 130. The gate electrode GE may overlap the channel region ACT1 of the active layer ACT with the gate insulating layer 130 interposed therebetween. According to an example, the gate electrode GE may include a lower gate electrode GE1 and an upper gate electrode GE2.

The interlayer insulating layer 140 may be provided on the gate electrode GE. In addition, the interlayer insulating layer 140 may be provided on the gate insulating layer 130 and the buffer layer 120. The interlayer insulating layer 140 may function to protect the thin film transistor T. In the interlayer insulating layer 140, a corresponding region may be removed to contact the active layer ACT and the source electrode SE or the drain electrode DE. For example, the interlayer insulating layer 140 may include a contact hole through which the source electrode SE passes and a contact hole through which the drain electrode DE passes.

The source electrode SE and the drain electrode DE may be provided spaced apart from each other on the interlayer insulating layer 140. The source electrode SE contacts one end of the source / drain region ACT2 of the active layer ACT through a contact hole provided in the interlayer insulating layer 140, and the drain electrode DE contacts the contact provided in the interlayer insulating layer 140 Through the hole, the other end of the source / drain region ACT2 of the active layer ACT may be contacted. In addition, the source electrode SE may directly contact the anode electrode AE through the contact hole of the passivation layer 150 and the contact hole of the planarization layer 160. According to an example, the source electrode SE may include a lower source electrode SE1 and an upper source electrode SE2. According to an example, the drain electrode DE may include a lower drain electrode DE1 and an upper drain electrode DE2.

The passivation layer 150 may cover the thin film transistor T. Specifically, the passivation layer 150 is provided on the interlayer insulating layer 140, the source electrode SE and the drain electrode DE, and can function to protect the source electrode SE and the drain electrode DE. . The passivation layer 150 may include a contact hole through which the anode electrode AE passes. Here, the contact hole of the passivation layer 150 may be connected to the contact hole of the planarization layer 160 to penetrate the anode electrode AE.

The planarization layer 160 may be disposed on the substrate 110 and cover the thin film transistor T disposed in the display area AA. Specifically, the planarization layer 160 is provided on the passivation layer 150 to planarize the top of the thin film transistor T. According to an example, the anode electrode AE and the contact pad CP may be provided to be spaced apart from each other at the top of the planarization layer 160. For example, the planarization layer 160 may include a contact hole through which the anode electrode AE passes. Here, the contact hole of the planarization layer 160 may be connected to the contact hole of the passivation layer 150 in order to penetrate the anode electrode AE.

The light emitting device E is disposed on the planarization layer 160 of the display area AA and may be electrically connected to the thin film transistor T. The light emitting device E may include an anode electrode AE, a light emitting layer EL, and a cathode electrode CE.

The anode electrode AE may be disposed in each opening of the plurality of sub-pixels SP. Specifically, the anode electrode AE may be surrounded by a bank B defining an opening of each of the plurality of sub-pixels SP. A portion of the anode electrode AE may be covered by the bank B, and another portion of the anode electrode AE may not be covered by the bank B and may be exposed through the opening. That is, each of the plurality of sub-pixels SP may emit light through the anode electrode AE exposed through the opening. Accordingly, the opening of each of the sub-pixels SP may be defined as the emission area EA of the sub-pixel SP.

The anode electrode AE may be provided on the planarization layer 160 of the display area AA, and may be electrically connected to the source electrode SE of the thin film transistor T. The anode electrode AE may contact the source electrode SE of the thin film transistor T through a contact hole provided in the planarization layer 160. The anode electrode AE may include first to fourth anode electrodes AE1, AE2, AE3, and AE4.

The first anode electrode AE1 may be disposed on the top of the anode electrode AE. Specifically, the first anode electrode AE1 may cover the second to fourth anode electrodes AE2, AE3, and AE4, and the second to fourth anode electrodes AE2, AE3, and AE4 are exposed to the outside. Can be prevented. Therefore, the first anode electrode AE1 may prevent corrosion of the second to fourth anode electrodes AE2, AE3, and AE4. For example, the oxidation degree of the first anode electrode AE1 may be lower than that of the second and third anode electrodes AE2 and AE3. In addition, the first anode electrode AE1 may be made of a material having stronger corrosion resistance than the second and third anode electrodes AE2 and AE3.

The first anode electrode AE1 is exposed through the openings of each of the plurality of sub-pixels SP to emit light. Specifically, the first anode electrode AE1 emits light in the emission area EA of the sub-pixel SP, so that the first anode electrode AE1 may function as a pixel electrode. According to an example, the first anode electrode AE1 may be made of transparent conductive oxide (TCO), such as Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO).

The second anode electrode AE2 may be disposed under the first anode electrode AE1. Specifically, the second anode electrode AE2 may be formed between the first anode electrode AE1 and the third anode electrode AE3. According to an example, the second anode electrode AE2 may be made of a metal having a relatively low resistance compared to the first and fourth anode electrodes AE1 and AE4. In addition, the second anode electrode AE2 may be formed thicker than the first and fourth anode electrodes AE1 and AE4 to reduce the overall resistance of the anode electrode AE.

According to an example, the second anode electrode AE2 may be made of a reflective metal. For example, the second anode electrode AE2 may be formed of one of molybdenum titanium alloy (MoTi), aluminum (Al), silver (Ag), molybdenum (Mo), and titanium (Ti). That is, the second anode electrode AE2 is disposed behind the first anode electrode AE1 and the emission layer EL, which serve as pixel electrodes, so that light generated from the emission layer EL can be reflected and the light is emitted. The display device 100 can be focused forward.

The third anode electrode AE3 may be disposed under the second anode electrode AE2. Specifically, the third anode electrode AE3 may be formed between the second anode electrode AE2 and the fourth anode electrode AE4. According to an example, the third anode electrode AE3 may be made of a metal having a relatively low resistance compared to the first and fourth anode electrodes AE1 and AE4. Further, the third anode electrode AE3 may be formed thicker than the first and fourth anode electrodes AE1 and AE4 in order to reduce the overall resistance of the anode electrode AE.

According to an example, the etching rate of the third anode electrode AE3 may be faster than the etching rate of the second anode electrode AE2. Specifically, the third anode electrode AE3 is disposed under the second anode electrode AE2 to be etched faster than the second anode electrode AE2, thereby increasing the amount of etching under the second anode electrode AE2. have. That is, the third anode electrode AE3 may serve as a sacrificial layer. For example, the third anode electrode AE3 may be made of a material having a high etching rate, such as copper (Cu). In addition, the middle portion of the side of the anode electrode AE may correspond to the boundary between the side of the second anode electrode AE2 and the side of the third anode electrode AE3. As a result, the middle portion of the side of the anode electrode AE may be concave based on the thickness direction of the anode electrode AE.

The fourth anode electrode AE4 may be provided on the flat surface of the planarization layer 160. Specifically, the oxidation degree of the fourth anode electrode AE4 may be lower than that of the second and third anode electrodes AE2 and AE3. In addition, the fourth anode electrode AE4 may enhance adhesion between the anode electrode AE and the planarization layer 160. According to an example, the fourth anode electrode AE4 may be formed of ITO (Indium Tin Oxide) or molybdenum titanium alloy (MoTi).

The emission layer EL may be provided on the anode electrode AE and the contact pad CP. The emission layer EL is not divided for each pixel region and may be formed to be common to all pixels. For example, the light emitting layer EL may include a hole transporting layer, an organic light emitting layer, and an electron transporting layer. According to an example, the light emitting layer EL may further include at least one functional layer for improving light emitting efficiency and lifetime of the light emitting layer.

According to an example, the light emitting layer EL may contact the upper surface of the contact pad CP, but may not contact a part of the side surface of the contact pad CP. Specifically, the middle portion of the side contact portion of the contact pad CP may be concave based on the thickness direction of the contact pad CP, and the upper portion of the contact pad CP may have a cornice shape. Accordingly, the light emitting layer EL may not be in contact with the middle portion of the side contact portion by the upper portion of the contact pad CP having a cornice shape. As a result, in the display device according to the present application, the light emitting layer EL may not come into contact with the middle portion of the contact pad CP, and the side surface of the contact pad CP without applying a separate voltage to the cathode electrode CE The contact portion and the vent portion of the cathode electrode CE may be brought into contact.

The cathode electrode CE may be provided on the emission layer EL. The cathode electrode CE is not classified for each pixel area, and may be implemented as an electrode common to all pixels. According to an example, the cathode electrode CE may be made of a transparent conductive oxide (TCO) such as Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO).

The cathode electrode CE may be in direct contact with the contact pad CP in an area where the emission layer EL is not formed. Specifically, the light emitting layer EL may not contact the side contact portion SC of the contact pad CP in the cathode contact region CCA. Accordingly, the cathode electrode CE may be formed on the emission layer EL in an area other than the cathode contact area CCA, and the side contact part SC of the contact pad CP in the cathode contact area CCA. Can be in direct contact.

The cathode electrode CE may include a vent portion BNT directly contacting the side contact portion SC. Specifically, the cathode electrode CE may include a first contact portion CNT1 in contact with the side surface of the second metal film CP2, and a second contact portion CNT2 in contact with the side surface of the third metal film CP3. Can be. For example, the second contact portion CNT2 may be bent from the first contact portion CNT1, and the vent portion BNT may have a side contact portion SC between the first contact portion CNT1 and the second contact portion CNT2. ) May be in contact with the middle part SC_M. Therefore, the cathode electrode CE may have a vent portion BNT to contact the side contact portion SC because the side contact portion SC of the contact pad CP is formed concavely.

The cathode electrode CE may be spaced apart from the pad electrode PE on the passivation layer 150. According to an example, the end of the cathode electrode CE may extend from the display area AA toward the pad area PA, and may be spaced apart from the pad electrode PE on the passivation layer 150. Specifically, the cathode electrode CE may be deposited to cover the light emitting layer EL of the display area AA, and may be covered by the encapsulation layer 170. Therefore, the cathode electrode CE may be insulated from the pad electrode PE while being separated from the pad electrode PE by the encapsulation layer 170.

The bank B may be disposed on the planarization layer 160 of the display area AA to divide the plurality of light emitting areas EA and the cathode contact area CCA. Specifically, the bank B is disposed between the openings of each of the plurality of sub-pixels SP, thereby defining an opening of each of the plurality of sub-pixels SP. For example, the bank B may cover a portion of the anode electrode AE, and the other portion of the anode electrode AE not covered by the bank B may open each opening of each of the plurality of sub-pixels SP. Can be exposed through. Further, the bank B may cover a part of the contact pad CP, and the other part of the contact pad CP not covered by the bank B may be exposed through the cathode contact area CCA. In addition, the bank B is disposed between the anode electrode AE and the contact pad CP to electrically insulate the adjacent anode electrode AE and the contact pad CP.

The encapsulation layer 170 may cover openings and banks B of each of the sub-pixels SP. According to an example, the encapsulation layer 170 may be provided on the entire upper end of the cathode electrode CE. The encapsulation layer 170 may prevent penetration of moisture or the like that may be introduced from the outside, thereby preventing deterioration of the light emitting layer EL. According to an example, the encapsulation layer 170 may be formed of a combination of at least one inorganic layer and at least one organic layer.

The first auxiliary power line EVSS1 is electrically connected to the auxiliary wiring AL, and may be made of the same material on the same layer as the gate electrode GE. Specifically, the first auxiliary power line EVSS1 may be disposed on the gate insulating layer 130. For example, the first auxiliary power line EVSS1 may overlap the second auxiliary power line EVSS2 with the buffer layer 120 and the gate insulating layer 130 interposed therebetween. The first auxiliary power line EVSS1 may include a lower first auxiliary power line EVSSa and an upper first auxiliary power line EVSSb. The first auxiliary power line EVSS1 may provide the contact pad CP with a low potential voltage supplied from the display driving circuit unit 210 through the pad electrode PE disposed on one edge of the substrate 110. .

The second auxiliary power line EVSS2 is electrically connected to the auxiliary wiring AL, and may be made of the same material in the same layer as the light blocking layer LS. Specifically, the second auxiliary power line EVSS2 may be disposed on the substrate 110. For example, the second auxiliary power line EVSS2 may overlap the first auxiliary power line EVSS1 with the buffer layer 120 and the gate insulating layer 130 interposed therebetween. The second auxiliary power line EVSS2 may include a lower second auxiliary power line EVSSc and an upper second auxiliary power line EVSSd. The second auxiliary power line EVSS2 may provide the contact pad CP with a low potential voltage supplied from the display driving circuit unit 210 through the pad electrode PE disposed on one edge of the substrate 110. .

In this way, the first and second auxiliary power lines EVSS1 and EVSS2 are electrically connected to the auxiliary wiring AL to increase the sum of the thicknesses of the electrodes connected to the contact pad CP. Accordingly, the first and second auxiliary power lines EVSS1 and EVSS2 are electrically connected to the auxiliary wiring AL, thereby reducing the overall resistance of the electrodes connected to the contact pad CP.

The auxiliary wiring AL may be disposed on the planarization layer 160 to be spaced apart from the source electrode SE and the drain electrode DE. In addition, the auxiliary wire AL may be electrically connected to the contact pad CP through the contact hole provided in the planarization layer 160. Specifically, the auxiliary wiring AL contacts the contact pad CP through the contact hole provided in the planarization layer 160 and contacts the first auxiliary power line EVSS1 through the contact hole provided in the interlayer insulating layer 140. The second auxiliary power line EVSS2 may be contacted through a contact hole provided in the interlayer insulating layer 140 and the buffer layer 120. Therefore, the auxiliary wiring AL connected to the contact pad CP is electrically connected to each of the first and second auxiliary power lines EVSS1 and EVSS2, thereby increasing the sum of the thicknesses of the electrodes connected to the contact pad CP. I can do it. Accordingly, the auxiliary wiring AL may be electrically connected to each of the first and second auxiliary power lines EVSS1 and EVSS2, thereby reducing the overall resistance of the electrodes connected to the contact pad CP. The auxiliary wiring AL may include a lower auxiliary wiring AL1 and an upper auxiliary wiring AL2.

The contact pad CP may be disposed on the planarization layer 160 of the cathode contact region CCA, and may be electrically connected to the auxiliary wiring AL. The contact pad CP may be disposed on the planarization layer 160 to be spaced apart from the anode electrode AE. In addition, the contact pad CP may be electrically connected to the auxiliary wiring AL through a contact hole provided in the planarization layer 160. The contact pad CP may include first to fourth metal films CP1, CP2, CP3, and CP4.

The first metal layer CP1 may be disposed on the top of the contact pad CP. The first metal layer CP1 may be disposed under the emission layer EL. Specifically, the first metal film CP1 may cover the second to fourth metal films CP2, CP3, and CP4, and the second to fourth metal films CP2, CP3, and CP4 are exposed to the outside. Can be prevented. Therefore, the first metal film CP1 can prevent the second to fourth metal films CP2, CP3, and CP4 from being corroded. For example, the degree of oxidation of the first metal layer CP1 may be lower than that of the second and third metal layers CP2 and CP3. In addition, the first metal film CP1 may be made of a material having stronger corrosion resistance than the second and third metal films CP2 and CP3.

According to an example, the first metal layer CP1 may be made of transparent conductive oxide (TCO), such as indium tin oxide (ITO) or indium zinc oxide (IZO). In addition, the first metal layer CP1 may be made of the same material as the first anode electrode AE1.

The second metal film CP2 may be disposed under the first metal film CP1. Specifically, the second metal film CP2 may be formed between the first metal film CP1 and the third metal film CP3. According to an example, the second metal film CP2 may be made of a metal having a relatively low resistance compared to the first and fourth metal films CP1 and CP4. In addition, the second metal layer CP2 may be formed thicker than the first and fourth metal layers CP1 and CP4 to reduce the overall resistance of the contact pad CP.

According to an example, the second metal layer CP2 may be made of a reflective metal. For example, the second metal layer CP2 may be formed of one of molybdenum titanium alloy (MoTi), aluminum (Al), silver (Ag), molybdenum (Mo), and titanium (Ti). In addition, the second metal layer CP2 may be made of the same material as the second anode electrode AE2.

The thickness of the second metal film CP2 may be thicker than the first and fourth metal films CP1 and CP4. For example, when the thickness of each of the first and fourth metal films CP1 and CP4 is 100 to 500 Angstroms, the thickness of the second metal film CP2 may be 1000 to 3000 Angstroms. . Specifically, after the material forming the anode electrode (AE) and the contact pad (CP) is provided on the planarization layer 160, the anode electrode (AE) and the contact pad (CP) may be patterned through an etching process. At this time, in the etching process of the contact pad CP, the thickness of the second metal film CP2 may be significantly greater than the thickness of the first metal film CP1, and the etching rate of the second metal film CP2 may be etched. rate) may be faster than the etching rate of the first metal layer CP1. Therefore, the etching amount under the second metal layer CP2 may be greater than the etching amount over the second metal layer CP2 adjacent to the first metal layer CP1.

The third metal film CP3 may be disposed under the second metal film CP2. Specifically, the third metal film CP3 may be formed between the second metal film CP2 and the fourth metal film CP4. According to an example, the third metal layer CP3 may be made of a metal having a relatively low resistance compared to the first and fourth metal layers CP1 and CP4. In addition, the third metal film CP3 may be formed thicker than the first and fourth metal films CP1 and CP4 to reduce the overall resistance of the contact pad CP.

The contact pad CP may include a side contact portion SC in contact with the cathode electrode CE. Specifically, the light emitting layer EL is in contact with the top surface of the contact pad CP, but may not be in contact with a part of the side surface of the contact pad CP. For example, the light emitting layer EL may not contact the side surfaces of the first to fourth metal films CP1, CP2, CP3, and CP4. For another example, the emission layer EL may not contact the side surfaces of the second and third metal films CP2 and CP3, respectively. For another example, the light emitting layer EL may not contact the side surface of the second metal layer CP2. As such, depending on the side shape of the light emitting layer EL and the contact pad CP, it may not come into contact with a part of the side of the contact pad CP, and the area where the side of the light emitting layer EL and the contact pad CP do not contact May be defined as a side contact portion SC of the contact pad CP. In addition, as the etching rate of the third metal film CP3 is faster than the etching rate of the second metal film CP2, the angle between the top surface and the side surface of the second metal film CP2 decreases, thereby making contact with the light emitting layer EL. The area where the side surface of the pad CP does not contact may increase, and the area of the side contact portion SC of the contact pad CP may increase.

The thickness of the third metal film CP3 may be thicker than the first and fourth metal films CP1 and CP4. For example, when the thickness of each of the first and fourth metal films CP1 and CP4 is 100 to 500 Angstroms, the thickness of the third metal film CP3 may be 1000 to 5000 Angstroms. . In addition, the thickness of the third metal film CP3 may be the same as or greater than the thickness of the second metal film CP2. For example, when the thickness of the second metal film CP2 is 1000 to 3000 Angstroms, the thickness of the third metal film CP3 may be 1000 to 5000 Angstroms. Therefore, the thickness of the third metal film CP3 is equal to or greater than that of the second metal film CP2, so that the middle part SC_M of the side contact part SC is the thickness direction of the contact pad CP It may be concave based on. Accordingly, the display device according to the present application includes a second metal film CP2 having a thickness of 1000 to 3000 Angstroms and a third metal film CP3 having a thickness of 1000 to 5000 Angstroms, The angle (? 1) formed between the top surface and the side surface of the second metal layer CP2 may be reduced, and the thickness of the entire contact pad CP may be increased.

According to an example, the contact pad CP may have a thickness such that the light emitting layer EL does not contact the middle portion SC_M of the side contact portion SC. For example, when the thickness of each of the contact pad CP and the light emitting layer EL is similar, the light emitting layer EL and the side contact portion SC are formed even though the middle portion SC_M of the side contact portion SC is concavely formed. Can be contacted. In addition, as the thickness of the second metal film CP2 becomes thicker, an angle (? 1) formed between the top surface and the side surface of the second metal film CP2 may decrease, and the light emitting layer EL may have a side contact portion SC ) May be increased. Accordingly, the display device according to the present application forms the same or greater than the thickness of the third metal film CP3 than the thickness of the second metal film CP2, thereby forming an angle formed by the top and side surfaces of the second metal film CP2. While reducing (? 1), the thickness of the entire contact pad CP can be increased. As a result, the display device according to the present application can increase the area where the light emitting layer EL does not contact the middle portion SC_M of the side contact portion SC.

According to an example, after the material constituting the anode electrode AE and the contact pad CP is provided on the planarization layer 160, the anode electrode AE and the contact pad CP may be patterned through an etching process. . In addition, the etching rate of the third metal film CP3 may be faster than the etching rate of the second metal film CP2. For example, the contact pad CP may be sequentially etched from the first metal film CP1 disposed on the top of the contact pad CP to the fourth metal film CP4 disposed on the bottom of the contact pad CP. Can be. That is, the etching of the third metal film CP3 may start from the time when the lower part of the second metal film CP2 is etched and the upper part of the third metal film CP3 is exposed. Therefore, since the etching of the third metal film CP3 starts later than that of the second metal film CP2, the etching rate of the third metal film CP3 is equal to or slower than the etching rate of the second metal film CP2. In this case, the side surface of the second metal film CP2 may have a tapered shape. In addition, when the side surface of the second metal film CP2 has a tapered shape, the light emitting layer EL may cover the entire side surface of the second metal film CP2.

However, according to an example of the present application, when the etching rate of the third metal film CP3 is faster than that of the second metal film CP2, the etching of the third metal film CP3 is performed by the second metal film ( Even if it starts later than CP2), the third metal film CP3 may be etched to the bottom of the second metal film CP2 that has not been etched. At this time, when the third metal film CP3 disposed on the bottom of the second metal film CP2 that has not been etched is first etched, the lower part of the second metal film CP2 is the upper part of the second metal film CP2. The area exposed to the etching solution may be wider. Therefore, the third metal film CP3 is disposed under the second metal film CP2 and is etched faster than the second metal film CP2, so that a metal (or less etching amount) is formed under the second metal film CP2. It is possible to increase the amount of etching under the second metal film CP2 than when the metal having a slow etching rate) is disposed. As such, the third metal layer CP3 may serve as a sacrificial layer. For example, the third metal layer CP3 may be made of a material having a high etching rate, such as copper (Cu). In addition, since the lower portion of the second metal layer CP2 is more etched than the upper portion of the second metal layer CP2, the side surface of the second metal layer CP2 may have a reverse taper shape. As a result, the middle portion SC_M of the side contact portion SC may be concave based on the thickness direction of the contact pad CP. And, as the etching rate of the third metal film CP3 is faster than that of the second metal film CP2, the amount of etching under the second metal film CP2 may increase, and the middle of the side contact portion SC The part SC_M may become more concave. If the side surface of the second metal film CP2 has a reverse taper shape, the light emitting layer EL may not be formed on the side surface of the second metal film CP2, and the middle of the side contact part SC The portion SC_M may be in contact with the vent portion BNT of the cathode electrode CE without applying a separate voltage to the cathode electrode CE.

6A to 6C, the middle portion SC_M of the side contact portion SC may be concave based on the thickness direction of the contact pad CP, and the upper portion of the contact pad CP may have a cornice shape. . For example, angles (? 1,? 3,? 5) formed by the top and side surfaces of the second metal layer CP2 may be 40 to 70 degrees. Specifically, when the etching rate of the third metal film CP3 is faster than that of the second metal film CP2, the etching amount under the second metal film CP2 may be increased and the second metal film CP2 The side of may have a reverse taper shape. In addition, when the angles (? 1,? 3,? 5) of the upper and side surfaces of the second metal film CP2 are 40 to 70 degrees, the light emitting layer EL is not formed on the side surfaces of the second metal film CP2. It may not. In addition, the smaller the angles (? 1,? 3,? 5) of the top and side surfaces of the second metal film CP2 (or the angle formed by the top and side surfaces of the second metal film CP2 becomes closer to 40 degrees. Collecting), the area where the light emitting layer EL is not formed on the side surface of the second metal film CP2 may increase, and the contact area between the middle part SC_M of the side contact part SC and the cathode electrode CE may be increased. Can be increased. Here, the angle (? 2,? 4,? 6) formed by the lower surface and the side surface of the third metal film CP3 may be 30 degrees to 60 degrees, but is not limited thereto. The angles (? 2,? 4,? 6) formed by the bottom and side surfaces of the third metal film CP3 are the angles (? 1,? 3,? 5) formed by the top and side surfaces of the second metal film CP2. The thickness of each of the second metal layer CP2 and the third metal layer CP3 may be determined.

Accordingly, the light emitting layer EL may not contact the middle portion SC_M of the side contact portion SC by the upper portion of the contact pad CP having the eaves shape. Here, the middle portion SC_M of the side contact portion SC may correspond to a boundary between the side surface of the second metal film CP2 and the side surface of the third metal film CP3. As a result, in the display device according to the present application, the light emitting layer EL may not contact the middle portion SC_M of the side contact portion SC, and the side contact portion without applying a separate voltage to the cathode electrode CE The intermediate portion SC_M of the SC and the vent portion BNT of the cathode electrode CE may be brought into contact. In addition, in the display device according to the present application, damage to the pixel array layer 190 can be prevented, and the cathode electrode CE and the contact pad CP are directly applied, rather than when a separate voltage is applied to the cathode electrode CE. The contact area can be precisely adjusted.

In FIG. 6A, the second and third metal films CP2 and CP3 may have the same thickness, and an angle (? 1) formed by the top and side surfaces of the second metal film CP2 is (3) the third metal film CP3. ) May be the same as the angle formed by the lower surface and the side surface (? 2). Therefore, the light emitting layer EL may not be in contact with the middle portion SC_M of the side contact portion SC, and without applying a separate voltage to the cathode electrode CE, the middle portion SC_M of the side contact portion SC ) And the vent portion BNT of the cathode electrode CE.

In FIG. 6B, the second and third metal films CP2 and CP3 may have the same thickness, and the angle formed by the top surface and the side surface of the second metal film CP2 (? 3) is the third metal film CP3. ) May be smaller than the angle formed by the lower surface and the side surface (? 4). That is, the middle portion SC_M of the side contact portion SC illustrated in FIG. 6B may have a structure in which the light emitting layer EL is more difficult to contact than the middle portion SC_M of the side contact portion SC illustrated in FIG. 6A. have. Accordingly, the display device according to the exemplary embodiment illustrated in FIG. 6B has a middle portion SC_M of the side contact portion SC and a vent portion BNT of the cathode electrode CE than the display device according to the exemplary embodiment illustrated in FIG. 6A. Can be easily contacted.

In FIG. 6C, the thickness of the third metal film CP3 may be thicker than that of the second metal film CP2, and the angle formed by the top and side surfaces of the second metal film CP2 (? 5) is the third It may be smaller than the angle (? 6) formed by the lower surface and the side surface of the metal film CP3. That is, the intermediate portion SC_M of the side contact portion SC illustrated in FIG. 6C may have a structure in which the light emitting layer EL is more difficult to contact than the intermediate portion SC_M of the side contact portion SC illustrated in FIG. 6A. have. Accordingly, the display device according to the exemplary embodiment illustrated in FIG. 6C has an intermediate portion SC_M of the side contact portion SC and a vent portion BNT of the cathode electrode CE than the display device according to the exemplary embodiment illustrated in FIG. 6A. Can be easily contacted.

The fourth metal layer CP4 may be provided on the flat surface of the planarization layer 160. Specifically, the degree of oxidation of the fourth metal layer CP4 may be lower than that of the second and third metal layers CP2 and CP3. In addition, the fourth metal layer CP4 may enhance adhesion between the contact pad CP and the planarization layer 160. According to an example, the fourth metal layer CP4 may be formed of ITO (Indium Tin Oxide) or molybdenum titanium alloy (MoTi).

The signal pad SP may be formed on the buffer layer 120. For example, the signal pad SP may be made of the same material on the same layer as the gate electrode GE. The signal pad SP may include a lower signal pad SP1 and an upper signal pad SP2.

The pad auxiliary electrode PAE may be disposed in the pad area PA to be electrically connected to the pad electrode PE. Specifically, the pad auxiliary electrode PAE may be disposed on the interlayer insulating layer 140 to be spaced apart from the source electrode SE and the drain electrode DE. That is, the pad auxiliary electrode PAE may be made of the same material on the same layer as the source electrode SE and the drain electrode DE. In addition, the pad auxiliary electrode PAE may be electrically connected to each of the signal pad SP and the pad electrode PE. For example, the pad auxiliary electrode PAE may contact the signal pad SP through the contact hole provided in the interlayer insulating layer 140, and the pad electrode PE and the pad electrode through the contact hole provided in the passivation layer 150. Can contact you. The pad auxiliary electrode PAE may include a lower pad auxiliary electrode PAE1 and an upper pad auxiliary electrode PAE2.

The pad electrode PE may be formed on the passivation layer 150 and may be made of the same material as the anode electrode AE and the contact pad CP. Further, the pad electrode PE may be electrically connected to the pad auxiliary electrode PAE. For example, the pad electrode PE may contact the pad auxiliary electrode PAE through a contact hole provided in the passivation layer 150. The pad electrode PE may include first to fourth pad electrodes PE1, PE2, PE3, and PE4.

The first pad electrode PE1 may be disposed on the top of the pad electrode PE. Specifically, the first pad electrode PE1 may cover the second to fourth pad electrodes PE2, PE3, and PE4, and the second to fourth pad electrodes PE2, PE3, and PE4 may be exposed to the outside. Can be prevented. Therefore, the first pad electrode PE1 may prevent corrosion of the second to fourth pad electrodes PE2, PE3, and PE4. For example, the oxidation degree of the first pad electrode PE1 may be lower than the oxidation degree of the second and third pad electrodes PE2 and PE3. Further, the first pad electrode PE1 may be made of a material having stronger corrosion resistance than the second and third pad electrodes PE2 and PE3. For example, the first pad electrode PE1 may be made of the same material as the first anode electrode AE1 and the first metal film CP1.

The second pad electrode PE2 may be disposed under the first pad electrode PE1. Specifically, the second pad electrode PE2 may be formed between the first pad electrode PE1 and the third pad electrode PE3. According to an example, the second pad electrode PE2 may be made of a metal having a relatively low resistance compared to the first and fourth pad electrodes PE1 and PE4. In addition, the second pad electrode PE2 may be formed thicker than the first and fourth pad electrodes PE1 and PE4 to reduce the overall resistance of the pad electrode PE. For example, the second pad electrode PE2 may be made of the same material as the second anode electrode AE2 and the second metal film CP2.

The third pad electrode PE3 may be disposed under the second pad electrode PE2. Specifically, the third pad electrode PE3 may be formed between the second pad electrode PE2 and the fourth pad electrode PE4. According to an example, the third pad electrode PE3 may be made of a metal having a relatively low resistance compared to the first and fourth pad electrodes PE1 and PE4. In addition, the third pad electrode PE3 may be formed thicker than the first and fourth pad electrodes PE1 and PE4 to reduce the overall resistance of the pad electrode PE. For example, the third pad electrode PE3 may be made of the same material as the third anode electrode AE3 and the third metal film CP3.

The fourth pad electrode PE4 may be provided on the passivation layer 150. Specifically, the oxidation degree of the fourth pad electrode PE4 may be lower than that of the second and third pad electrodes PE2 and CP3. Also, the fourth pad electrode PE4 may enhance adhesion between the pad electrode PE and the passivation layer 150. According to an example, the fourth pad electrode PE4 may be formed of ITO (Indium Tin Oxide) or molybdenum titanium alloy (MoTi).

The storage capacitor Cst may include a lower capacitor electrode BC, a central capacitor electrode MC, and an upper capacitor electrode TC. Specifically, the lower capacitor electrode BC and the central capacitor electrode MC can face each other with the buffer layer 120 therebetween, and the central capacitor electrode MC and the upper capacitor electrode TC are interlayer insulating layers 140. Can face each other. Therefore, the storage capacitor Cst forms a capacitance between the lower capacitor electrode BC and the central capacitor electrode MC, while also forming the capacitance between the central capacitor electrode MC and the upper capacitor electrode TC, thereby increasing the overall capacitance. I can do it.

7 is a process cross-sectional view schematically showing a method of manufacturing a display device according to a first embodiment of the present application, which is a process cross-sectional view of the cutting line I-I 'shown in FIG. 2.

In FIG. 7A, the contact pad CP is disposed on the planarization layer 160 of the cathode contact area CCA, and may be electrically connected to the auxiliary wiring AL. The contact pad CP may be disposed on the planarization layer 160 to be spaced apart from the anode electrode AE. In addition, the contact pad CP may be electrically connected to the auxiliary wiring AL through a contact hole provided in the planarization layer 160. The contact pad CP may include first to fourth metal films CP1, CP2, CP3, and CP4.

According to an example, after the anode electrode (AE), the pad electrode (PE), and the materials forming the contact pad (CP) are provided on the planarization layer 160, the anode electrode (AE), the pad electrode (PE), and The contact pad CP may be patterned through an etching process. Here, the second metal film CP2 may be made of one of molybdenum titanium alloy (MoTi), aluminum (Al), silver (Ag), molybdenum (Mo), and titanium (Ti), and the third metal film CP3 ) May be made of copper (Cu). In addition, since the anode electrode AE and the pad electrode PE are made of the same material in the same process as the contact pad CP, the second anode electrode AE2 and the second pad electrode PE2 have a second metal film ( CP2), and the third anode electrode AE3 and the third pad electrode PE3 may be made of the same material as the third metal film CP3. Accordingly, the etching rate of the third metal film CP3 may be faster than that of the second metal film CP2. And, the etching rate of the third anode electrode AE3 may be faster than that of the second anode electrode AE2, and the etching rate of the third pad electrode PE3 may be higher than that of the second pad electrode PE2. It can be fast. Therefore, the third metal film CP3 is disposed under the second metal film CP2 and is etched faster than the second metal film CP2, so that a metal (or less etching amount) is formed under the second metal film CP2. It is possible to increase the amount of etching under the second metal film CP2 than when the metal having a slow etching rate) is disposed. As a result, the middle portion of the side surface of the contact pad CP may be concave based on the thickness direction of the contact pad CP. And, the middle portion of each side of the anode electrode AE may be concave based on the thickness direction of the anode electrode AE, and the middle portion of each side of the pad electrode PE may be concave based on the thickness direction. have.

According to an example, the anode electrode AE, the pad electrode PE, and the contact pad CP may be patterned at once through the same process. That is, in the process in which the middle portion of one side of the contact pad CP is formed concave based on the thickness direction of the contact pad CP, the middle portion of the other side opposite to one side of the contact pad CP and the anode The middle portion of each side of the electrode AE and the middle portion of each side of the pad electrode PE may be concave based on the thickness direction.

In FIG. 7B, the light emitting layer EL is in contact with the top surface of the contact pad CP, but may not be in contact with a part of the side surface of the contact pad CP. Specifically, the middle portion SC_M of the side contact portion SC may be concave based on the thickness direction of the contact pad CP, and the upper portion of the contact pad CP may have a cornice shape. Accordingly, the light emitting layer EL may not contact the middle portion SC_M of the side contact portion SC by the upper portion of the contact pad CP having the eaves shape.

In FIG. 7C, the cathode electrode CE may include a vent portion BNT directly contacting the side contact portion SC. Specifically, the light emitting layer EL may not be in contact with the side contact portion SC, and the cathode electrode CE may be in contact with the side contact portion SC of the contact pad CP without receiving a separate voltage. have.

Therefore, in the display device according to the present application, the cathode electrode CE is brought into direct contact with the side surface of the contact pad CP, so that the luminance due to the IR drop of the cathode voltage CE supplied to the cathode electrode CE Non-uniformity can be prevented. In addition, the display device according to the present application can reduce the number of mask processes and control the number of areas in which the cathode electrode CE and the contact pad CP are in direct contact, and the cathode electrode CE and the contact pad CP are The light emitting area can be increased by reducing the area of the directly contacting area. In addition, the display device according to the present application may contact the side contact portion SC of the contact pad CP and the vent portion BNT of the cathode electrode CE without applying a separate voltage to the cathode electrode CE, Rather than when a separate voltage is applied to the cathode electrode CE, damage to the pixel array layer 190 can be prevented and an area where the cathode electrode CE and the contact pad CP are directly contacted can be precisely adjusted. .

8 is a cross-sectional view of the cutting line I-I 'of FIG. 2 in the display device according to the second exemplary embodiment of the present application. FIG. 9 is an enlarged view of region F of FIG. 8, and FIG. 10 is an enlarged view of region G of FIG. 9. Here, the display device illustrated in FIGS. 8 to 10 is different from the display device of FIGS. 4 to 6 and the configuration of the contact pad CP, anode electrode AE, and pad electrode PE, and the above-described display device is used. The same configuration as the configuration will be briefly described or omitted.

The contact pad CP may be disposed on the planarization layer 160 of the cathode contact region CCA, and may be electrically connected to the auxiliary wiring AL. The contact pad CP may be disposed on the planarization layer 160 to be spaced apart from the anode electrode AE. In addition, the contact pad CP may be electrically connected to the auxiliary wiring AL through a contact hole provided in the planarization layer 160. The contact pad CP may include first to third metal films CP1, CP2, and CP3.

The first metal layer CP1 may be disposed on the top of the contact pad CP. The first metal layer CP1 may be disposed under the emission layer EL. Specifically, the first metal film CP1 may cover the second and third metal films CP2 and CP3, and the second and third metal films CP2 and CP3 may be prevented from being exposed to the outside. . Therefore, the first metal film CP1 can prevent the second and third metal films CP2 and CP3 from being corroded. For example, the degree of oxidation of the first metal layer CP1 may be lower than that of the second and third metal layers CP2 and CP3. In addition, the first metal film CP1 may be made of a material having stronger corrosion resistance than the second and third metal films CP2 and CP3.

According to an example, the first metal layer CP1 may be made of a transparent conductive oxide (TCO) such as Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO). In addition, the first metal layer CP1 may be made of the same material as the first anode electrode AE1 and the first pad electrode PE1.

The second metal film CP2 may be disposed under the first metal film CP1. Specifically, the second metal film CP2 may be formed between the first metal film CP1 and the third metal film CP3. According to an example, the second metal layer CP2 may be made of a metal having a relatively low resistance compared to the first metal layer CP1. In addition, the second metal layer CP2 may be formed thicker than the first metal layer CP1 to reduce the overall resistance of the contact pad CP.

According to an example, the second metal layer CP2 may be made of a reflective metal. For example, the second metal layer CP2 may be formed of one of molybdenum titanium alloy (MoTi), aluminum (Al), silver (Ag), molybdenum (Mo), and titanium (Ti). In addition, the second metal layer CP2 may be made of the same material as the second anode electrode AE2 and the second pad electrode PE2.

The thickness of the second metal layer CP2 may be greater than that of the first metal layer CP1. For example, when the thickness of the first metal film CP1 is 100 to 500 Angstroms, the thickness of the second metal film CP2 may be 1000 to 3000 Angstroms. Specifically, after the material forming the anode electrode (AE) and the contact pad (CP) is provided on the planarization layer 160, the anode electrode (AE) and the contact pad (CP) may be patterned through an etching process. At this time, in the etching process of the contact pad CP, the thickness of the second metal film CP2 may be significantly greater than the thickness of the first metal film CP1, and the etching rate of the second metal film CP2 may be etched. rate) may be faster than the etching rate of the first metal layer CP1. Therefore, the etching amount under the second metal layer CP2 may be greater than the etching amount over the second metal layer CP2 adjacent to the first metal layer CP1.

The third metal film CP3 may be disposed under the second metal film CP2. Specifically, the third metal layer CP3 may be formed between the second metal layer CP2 and the planarization layer 160. According to an example, the third metal layer CP3 may be made of a metal having a relatively low resistance compared to the first metal layer CP1. In addition, the third metal film CP3 may be formed thicker than the first metal film CP1 to reduce the overall resistance of the contact pad CP.

The thickness of the third metal layer CP3 may be greater than that of the first metal layer CP1. For example, when the thickness of each of the first metal films CP1 is 100 to 500 Angstroms, the thickness of the third metal films CP3 may be 1000 to 5000 Angstroms. In addition, the thickness of the third metal film CP3 may be the same as or greater than the thickness of the second metal film CP2. For example, when the thickness of the second metal film CP2 is 1000 to 3000 Angstroms, the thickness of the third metal film CP3 may be 1000 to 5000 Angstroms. Therefore, the thickness of the third metal film CP3 is equal to or greater than that of the second metal film CP2, so that the middle part SC_M of the side contact part SC is the thickness direction of the contact pad CP It may be concave based on. Accordingly, the display device according to the present application includes a second metal film CP2 having a thickness of 1000 to 3000 Angstroms and a third metal film CP3 having a thickness of 1000 to 5000 Angstroms, The angle (? 1) formed between the top surface and the side surface of the second metal layer CP2 may be reduced, and the thickness of the entire contact pad CP may be increased.

According to an example, the contact pad CP may have a thickness such that the light emitting layer EL does not contact the middle portion SC_M of the side contact portion SC. For example, when the thickness of each of the contact pad CP and the light emitting layer EL is similar, the light emitting layer EL and the side contact portion SC are formed even though the middle portion SC_M of the side contact portion SC is concavely formed. Can be contacted. In addition, as the thickness of the second metal film CP2 becomes thicker, an angle (? 1) formed between the top surface and the side surface of the second metal film CP2 may decrease, and the light emitting layer EL may have a side contact portion SC ) May be increased. Accordingly, the display device according to the present application forms the same or greater than the thickness of the third metal film CP3 than the thickness of the second metal film CP2, thereby forming an angle formed by the top and side surfaces of the second metal film CP2. While reducing (? 1), the thickness of the entire contact pad CP can be increased. As a result, the display device according to the present application can increase the area where the light emitting layer EL does not contact the middle portion SC_M of the side contact portion SC.

The contact pad CP may include a side contact portion SC in contact with the cathode electrode CE. Specifically, the light emitting layer EL is in contact with the top surface of the contact pad CP, but may not be in contact with a part of the side surface of the contact pad CP. For example, the light emitting layer EL may not contact the side surfaces of the first to third metal films CP1, CP2, and CP3. For another example, the emission layer EL may not contact the side surfaces of the second and third metal films CP2 and CP3, respectively. For another example, the light emitting layer EL may not contact the side surface of the second metal layer CP2. As such, depending on the side shape of the light emitting layer EL and the contact pad CP, it may not come into contact with a part of the side of the contact pad CP, and the area where the side of the light emitting layer EL and the contact pad CP do not contact May be defined as a side contact portion SC of the contact pad CP. In addition, as the etching rate of the third metal film CP3 is faster than the etching rate of the second metal film CP2, the angle between the top surface and the side surface of the second metal film CP2 decreases, thereby making contact with the light emitting layer EL. The area where the side surface of the pad CP does not contact may increase, and the area of the side contact portion SC of the contact pad CP may increase.

According to an example, after the material constituting the anode electrode AE and the contact pad CP is provided on the planarization layer 160, the anode electrode AE and the contact pad CP may be patterned through an etching process. . In addition, the etching rate of the third metal film CP3 may be faster than that of the second metal film CP2. For example, the contact pad CP may be sequentially etched from the first metal film CP1 disposed on the top of the contact pad CP to the fourth metal film CP4 disposed on the bottom of the contact pad CP. Can be. That is, the etching of the third metal film CP3 may start from the time when the lower part of the second metal film CP2 is etched and the upper part of the third metal film CP3 is exposed. Therefore, since the etching of the third metal film CP3 starts later than that of the second metal film CP2, the etching rate of the third metal film CP3 is equal to or slower than the etching rate of the second metal film CP2. In this case, the side surface of the second metal film CP2 may have a tapered shape. In addition, when the side surface of the second metal film CP2 has a tapered shape, the light emitting layer EL may cover the entire side surface of the second metal film CP2.

However, according to an example of the present application, when the etching rate of the third metal film CP3 is faster than that of the second metal film CP2, the etching of the third metal film CP3 is performed by the second metal film ( Even if it starts later than CP2), the third metal film CP3 may be etched to the bottom of the second metal film CP2 that has not been etched. At this time, when the third metal film CP3 disposed on the bottom of the second metal film CP2 that has not been etched is first etched, the lower part of the second metal film CP2 is the upper part of the second metal film CP2. The area exposed to the etching solution may be wider.

Therefore, the third metal film CP3 is disposed under the second metal film CP2 and is etched faster than the second metal film CP2, so that a metal (or less etching amount) is formed under the second metal film CP2. It is possible to increase the amount of etching under the second metal film CP2 than when the metal having a slow etching rate) is disposed. As such, the third metal layer CP3 may serve as a sacrificial layer. For example, the third metal layer CP3 may be made of a transparent conductive oxide (TCO) such as Indium Zinc Oxide (IZO). In addition, since the lower portion of the second metal layer CP2 is more etched than the upper portion of the second metal layer CP2, the side surface of the second metal layer CP2 may have a reverse taper shape. As a result, the middle portion SC_M of the side contact portion SC may be concave based on the thickness direction of the contact pad CP. And, as the etching rate of the third metal film CP3 is faster than that of the second metal film CP2, the amount of etching under the second metal film CP2 may increase, and the middle of the side contact portion SC The part SC_M may become more concave.

10A to 10C, the middle portion SC_M of the side contact portion SC may be concave based on the thickness direction of the contact pad CP, and the upper portion of the contact pad CP may have a cornice shape. . For example, angles (? 1,? 3,? 5) formed by the top and side surfaces of the second metal layer CP2 may be 40 to 70 degrees. Specifically, when the etching rate of the third metal film CP3 is faster than that of the second metal film CP2, the etching amount under the second metal film CP2 may be increased and the second metal film CP2 The side of may have a reverse taper shape. In addition, when the angles (? 1,? 3,? 5) of the upper and side surfaces of the second metal film CP2 are 40 to 70 degrees, the light emitting layer EL is not formed on the side surfaces of the second metal film CP2. It may not. In addition, the smaller the angles (? 1,? 3,? 5) of the top and side surfaces of the second metal film CP2 (or the angle formed by the top and side surfaces of the second metal film CP2 becomes closer to 40 degrees. Collecting), the area where the light emitting layer EL is not formed on the side surface of the second metal film CP2 may increase, and the contact area between the middle part SC_M of the side contact part SC and the cathode electrode CE may be increased. Can be increased. Here, the angle (? 2,? 4,? 6) formed by the lower surface and the side surface of the third metal film CP3 may be 30 degrees to 60 degrees, but is not limited thereto. The angles (? 2,? 4,? 6) formed by the bottom and side surfaces of the third metal film CP3 are the angles (? 1,? 3,? 5) formed by the top and side surfaces of the second metal film CP2. The thickness of each of the second metal layer CP2 and the third metal layer CP3 may be determined.

Accordingly, the light emitting layer EL may not contact the middle portion SC_M of the side contact portion SC by the upper portion of the contact pad CP having the eaves shape. Here, the middle portion SC_M of the side contact portion SC may correspond to a boundary between the side surface of the second metal film CP2 and the side surface of the third metal film CP3. As a result, in the display device according to the present application, the light emitting layer EL may not contact the middle portion SC_M of the side contact portion SC, and the side contact portion without applying a separate voltage to the cathode electrode CE The intermediate portion SC_M of the SC and the vent portion BNT of the cathode electrode CE may be brought into contact. In addition, in the display device according to the present application, damage to the pixel array layer 190 can be prevented, and the cathode electrode CE and the contact pad CP are directly applied, rather than when a separate voltage is applied to the cathode electrode CE. The contact area can be precisely adjusted.

In FIG. 10A, the second and third metal films CP2 and CP3 may have the same thickness, and an angle (? 1) formed by the top and side surfaces of the second metal film CP2 is (3) the third metal film CP3. ) May be the same as the angle formed by the lower surface and the side surface (? 2). Therefore, the light emitting layer EL may not be in contact with the middle portion SC_M of the side contact portion SC, and without applying a separate voltage to the cathode electrode CE, the middle portion SC_M of the side contact portion SC ) And the vent portion BNT of the cathode electrode CE.

In FIG. 10B, the second and third metal films CP2 and CP3 may have the same thickness, and the angle formed by the top and side surfaces of the second metal film CP2 (? 3) is the third metal film CP3. ) May be smaller than the angle formed by the lower surface and the side surface (? 4). That is, the intermediate portion SC_M of the side contact portion SC illustrated in FIG. 10B may have a structure in which the light emitting layer EL is more difficult to contact than the intermediate portion SC_M of the side contact portion SC illustrated in FIG. 10A. have. Accordingly, the display device according to the exemplary embodiment illustrated in FIG. 10B has a middle portion SC_M of the side contact portion SC and a vent portion BNT of the cathode electrode CE than the display device according to the exemplary embodiment illustrated in FIG. 10A. Can be easily contacted.

In FIG. 10C, the thickness of the third metal film CP3 may be thicker than that of the second metal film CP2, and the angle formed by the top and side surfaces of the second metal film CP2 (? 5) is the third It may be smaller than the angle formed by the lower surface and the side surface of the metal film CP3 (? 6). That is, the intermediate portion SC_M of the side contact portion SC illustrated in FIG. 10C may have a structure in which the light emitting layer EL is more difficult to contact than the intermediate portion SC_M of the side contact portion SC illustrated in FIG. 10A. have. Accordingly, the display device according to the exemplary embodiment illustrated in FIG. 10C has a middle portion SC_M of the side contact portion SC and a vent portion BNT of the cathode electrode CE than the display device according to the exemplary embodiment illustrated in FIG. 10A. Can be easily contacted.

The cathode electrode CE may include a vent portion BNT directly contacting the side contact portion SC. Specifically, the cathode electrode CE may include a first contact portion CNT1 in contact with the side surface of the second metal film CP2, and a second contact portion CNT2 in contact with the side surface of the third metal film CP3. Can be. For example, the second contact portion CNT2 may be bent from the first contact portion CNT1, and the vent portion BNT may have a side contact portion SC between the first contact portion CNT1 and the second contact portion CNT2. ) May be in contact with the middle part SC_M. Therefore, the cathode electrode CE may have a vent portion BNT to contact the side contact portion SC because the side contact portion SC of the contact pad CP is formed concavely.

The present application described above is not limited to the above-described embodiments and the accompanying drawings, and it is common in the technical field to which the present application pertains that various substitutions, modifications, and changes are possible without departing from the technical details of the present application. It will be clear to those who have the knowledge of Therefore, the scope of the present application is indicated by the claims, which will be described later, and all changes or modified forms derived from the meaning and scope of the claims and equivalent concepts should be interpreted to be included in the scope of the present application.

100: display device
110: substrate 120: buffer layer
T: Transistor LS: Light shielding layer
130: gate insulating film 140: interlayer insulating film
150: passivation layer 160: planarization layer
E: light emitting element AE: anode electrode
EL: emitting layer CE: cathode electrode
B: Bank CP: Contact pad
170: sealing layer
EVSS1, EVSS2: first and second auxiliary power lines
AL: Auxiliary wiring SP: Signal pad
PAE: Pad auxiliary electrode PE: Pad electrode
Cst: storage capacitor
210: display driving circuit section 220: scan driving circuit section

Claims (20)

A substrate including a plurality of light emitting regions, a display region having a cathode contact region adjacent to the at least one light emitting region, and a pad region including a pad electrode;
A thin film transistor disposed in each of the plurality of light emitting regions;
A planarization layer covering the thin film transistor;
An anode electrode disposed on the planarization layer and electrically connected to the thin film transistor;
A light emitting layer disposed on the anode electrode;
A cathode electrode disposed on the light emitting layer; And
A contact pad disposed on the planarization layer in the cathode contact region and including a side contact portion in contact with the cathode electrode,
The intermediate portion of the side contact portion is concave based on the thickness direction of the contact pad, the display device. According to claim 1,
The contact pad,
A first metal film disposed under the light emitting layer;
A second metal film disposed under the first metal film; And
And a third metal film disposed under the second metal film,
The intermediate portion of the side contact portion corresponds to a boundary between a side surface of the second metal film and a side surface of the third metal film. According to claim 2,
The contact pad further includes a fourth metal layer disposed between the third metal layer and the planarization layer. The method according to claim 2 or 3,
The smaller the angle formed between the upper surface and the side surface of the second metal film, the greater the contact area between the middle portion of the side contact portion and the cathode electrode. The method according to claim 2 or 3,
The angle formed by the upper surface and the side surface of the second metal film is 40 degrees to 70 degrees, and the angle formed by the lower surface and side surface of the third metal film is 30 degrees to 60 degrees. According to claim 2,
The third metal film is made of IZO (Indium Zinc Oxide), a display device. The method of claim 6,
The thickness of the third metal film is 1000 to 5000 Angstrom (롬), the display device. The method of claim 3,
The third metal layer is made of copper (Cu), and the fourth metal layer is made of Indium Tin Oxide (ITO) or Molybdenum Titanium Alloy (MoTi). The method of claim 8,
The thickness of the third metal film is 1000 to 5000 Angstroms (Å), the thickness of the fourth metal film is 100 to 500 Angstroms (Å). The method of claim 6 or 8,
The first metal film is made of Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO), and the second metal film is aluminum (Al), a molybdenum titanium alloy (MoTi), silver (Ag), molybdenum (Mo), and A display device made of one of titanium (Ti). The method of claim 10,
The display device of claim 1, wherein the thickness of the first metal film is 100 to 500 Angstroms, and the thickness of the second metal film is 1000 to 3000 Angstroms. According to claim 2,
The cathode electrode includes a vent portion in contact with an intermediate portion of the side contact portion. The method of claim 12,
The vent portion of the cathode electrode,
A first contact portion in contact with a side surface of the second metal film; And
And a second contact portion bent from the first contact portion and contacting a side surface of the third metal film. According to claim 1,
The intermediate portion of each side surface of the anode electrode is concave based on the thickness direction of the anode electrode, the display device. According to claim 1,
The middle portion of each side surface of the pad electrode is concave based on the thickness direction of the pad electrode. According to claim 1,
And an auxiliary wire electrically connected to the contact pad through a contact hole provided in the planarization layer. The method of claim 16,
The thin film transistor includes an active layer, a gate electrode, a source electrode, and a drain electrode,
The auxiliary wiring is made of the same material as the source electrode and the drain electrode, a display device. The method of claim 17,
And a first auxiliary power line electrically connected to the auxiliary wiring and made of the same material as the gate electrode. The method of claim 17,
A light blocking layer disposed between the substrate and the thin film transistor and overlapping the thin film transistor; And
And a second auxiliary power line electrically connected to the auxiliary wiring and made of the same material as the light blocking layer. The method of claim 17,
The pad electrode is electrically connected to the pad electrode, and further includes a pad auxiliary electrode made of the same material as the source electrode and the drain electrode.
The cathode electrode is electrically connected to the pad auxiliary electrode in the pad area.

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