KR20180062725A - Dielectric composition and capacitor comprising the same - Google Patents

Abstract

A dielectric composition of the present invention includes a main component and a sub component of a base material represented by Ba_mTiO_3 (0.995 <= m <= 1.005). The sub component, with respect to 100 moles of the main component of the base material, includes a first sub component of 0.5 to 1.5 moles, which is oxide or carbide containing Li, a second sub component of 0.8 to 1.8 moles, which is oxide or carbide containing at least one of B and Al, a third sub component of 0.6 to 3.0 moles, which is oxide or carbide containing Si, and a fourth sub component of 1.0 to 4.0 moles, which is oxide or carbide containing at least one of Mg and Ba. Low temperature firing is possible and high temperature reliability can be ensured.

Description

[0001] DIELECTRIC COMPOSITION AND CAPACITOR COMPRISING THE SAME [0002]

The present invention relates to dielectric compositions and capacitors comprising same.

In the electronic device market, there is a growing demand for products that can secure stable electrical characteristics and reliability for stable operation of the device. In particular, electronic devices for electric fields are demanding electronic components having superior reliability characteristics at higher temperatures than general electronic devices.

In order to realize capacity and excellent reliability in accordance with market demand, it is necessary to use a main component having a finely divided size and a dielectric composition having a high dielectric constant and being capable of sintering at a low temperature. However, when the main component (BaTiO ₃ ) of fine grains is used for realizing excellent reliability, there arises a problem of lowering the dielectric constant and lowering the capacity at a high temperature. In addition, since the existing dielectric composition proceeds at a firing temperature of about 1200 ° C., the connectivity of the internal electrode may be reduced, and it may be difficult to ensure excellent reliability characteristics due to the concentration of electric field in the cut portion of the electrode.

Therefore, it is necessary to develop a dielectric composition which can be fired at a low temperature while using the main component of the base material, securing the connectivity of the internal electrode and securing excellent grain boundary resistance.

Korean Patent Publication No. 10-2016-0005493 Japanese Patent Publication No. 5651703

The present invention relates to a dielectric composition capable of firing at a low temperature and having excellent high-temperature reliability, and a capacitor including the dielectric composition.

The dielectric composition according to one embodiment of the present invention includes a main component and a subcomponent represented by Ba _m TiO ₃ (0.995? _M ? 1.005), and the subcomponent is an oxide or a carbide containing Li 0.5 to 1.5 mol of a first subcomponent, 0.8 to 1.8 mol of a second subcomponent which is an oxide or a carbide comprising at least one of B and Al, 0.6 to 3.0 mol of a third subcomponent of an oxide or carbide comprising Si, Ba, and 1.0 to 4.0 moles of a fourth subcomponent, which is an oxide or a carbide, containing at least one of Ba and Ba.

The present invention provides a dielectric composition including a Li oxide or a carbide as a main component and capable of being fired at a low temperature and having excellent high-temperature reliability, and a capacitor including the dielectric composition.

1 is a schematic perspective view showing a capacitor according to an embodiment of the present invention.
2 is a schematic cross-sectional view showing a capacitor taken along line A-A 'in FIG.
FIG. 3 (a) is a scanning electron microscope photograph of a conventional capacitor section, and FIG. 3 (b) is a scanning electron microscopic photograph of a capacitor section according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

However, the embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Embodiments of the present invention are also provided to more fully describe the present invention to those skilled in the art.

Therefore, the shapes and sizes of the elements in the drawings and the like can be exaggerated for clarity, and the elements denoted by the same reference numerals in the drawings are the same elements.

The present invention relates to a dielectric composition, and an electronic component including a dielectric composition includes a capacitor, an inductor, a piezoelectric element, a varistor, or a thermistor. Hereinafter, a capacitor will be described as an example of a dielectric composition and an electronic component.

Hereinafter, the dielectric composition according to the present invention will be described.

The dielectric composition according to one embodiment of the present invention includes a main component and a minor component represented by Ba _m TiO ₃ (0.995? _M ? 1.005).

The dielectric composition according to the present invention is capable of firing in a reducing atmosphere at a temperature of 1000 占 폚 or less and satisfying excellent high-temperature reliability characteristics.

Further, the capacitor using the dielectric composition according to the present invention can operate from -55 DEG C to 125 DEG C, and can ensure high dielectric constant and high temperature reliability without grain growth of the dielectric grain in the dielectric layer.

Hereinafter, each component of the dielectric composition according to one embodiment of the present invention will be described in more detail.

Base material  chief ingredient

In the dielectric composition according to one embodiment of the present invention, the matrix main component is represented by Ba _m TiO ₃ (0.995? _M ? 1.005).

The value of m is an important factor in the matrix main component.

M is 0.995 to 1.005. If m is less than 0.995, BaTiO ₃ can be easily reduced in calcination under reducing atmosphere, and the main component of the mother material can be converted into semiconductive water. If m is more than 1.005, have.

In order to have a low firing temperature and to have a higher dielectric constant, the m value of Ba _m TiO ₃ can more preferably satisfy 0.996? M? 0.999.

Subcomponent

According to one embodiment of the present invention, the dielectric composition includes a main component and a subcomponent, and the subcomponent includes 0.5 to 1.5 moles of the first subcomponent, which is an oxide or a carbide containing Li, with respect to 100 moles of the main component, ; 0.8 to 1.8 moles of a second subcomponent which is an oxide or a carbide including at least one of B and Al; 0.6 to 3.0 moles of a third subcomponent, which is an oxide or a carbide containing Si; And 1.0 to 4.0 moles of a fourth subcomponent which is an oxide or carbide comprising at least one of Mg and Ba.

When the dielectric layer is composed only of the mother material main component, the sintering temperature may be increased and it may be difficult to satisfy the important temperature characteristics of the capacitor.

According to the present invention, in order to solve the above problems, the subcomponent may include 0.5 to 1.5 mol of a first sub ingredient, which is an oxide or a carbide containing Li; 0.8 to 1.8 moles of a second subcomponent which is an oxide or a carbide including at least one of B and Al; 0.6 to 3.0 moles of a third subcomponent, which is an oxide or a carbide containing Si; And 1.0 to 4.0 moles of a fourth subcomponent which is an oxide or carbide comprising at least one of Mg and Ba.

The first to third subcomponents may react with other subcomponents and the base material to lower the sintering temperature.

The first subcomponent is an oxide or a carbide containing Li, and its content is 0.5 to 1.5 moles with respect to 100 moles of the mother material main component.

If the content of the first subcomponent is less than 0.5 mole, the sintering temperature tends to rise to 1000 ° C or higher. If the content of the first subcomponent is more than 1.5 mole, the sintering temperature sharply drops but the desired dielectric constant value can not be obtained There is a problem that the reliability is deteriorated.

The second subcomponent is an oxide or a carbide containing at least one of B and Al, and its content is 0.8 to 1.8 mol.

If the content of the second accessory ingredient is less than 0.8 mol, there is a problem that the firing temperature does not decrease to less than 1000 캜. If the content of the second accessory ingredient exceeds 1.8 mol, the firing temperature may sharply decrease but a desired dielectric constant value can not be secured, The reliability may be lowered.

The third subcomponent is an oxide or carbide containing Si, and its content is 0.6 to 3.0 mol.

If the content of the third subcomponent is less than 0.6 mol, the firing may be fired at a temperature higher than the desired temperature. If the content of the third subcomponent is more than 3.0 mol, it is difficult to control the dielectric growth of the dielectric. I will not.

If the content of the first subcomponent is a, the content of the second subcomponent is b, and the content of the third subcomponent is c, 0.6? (A + b) / c? 1.8.

When 0.6? (A + b) / c? 1.8 is satisfied, superior high-temperature reliability can be secured.

The fourth subcomponent is an oxide or a carbide containing at least one of Mg and Ba, and its content is 1.0 to 4.0 mol.

The fourth subcomponent may serve to impart resistance to reduction, grain growth control, and sintering stability.

If the content of the fourth subcomponent is less than 1.0 mol, it is easily reduced in firing in a reducing atmosphere and control of grain growth may be difficult. If the content of the fourth subcomponent is more than 4.0 mol, the firing temperature may increase and a desired dielectric constant value can not be secured.

The subcomponent includes at least one of Sc, Y, La, Ac, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, 0.3 to 6.0 moles of the fifth subcomponent as an oxide to be contained; And 0.05 to 0.5 mol of a sixth subcomponent which is an oxide containing at least one of Cr, Mo, W, Mn, Fe, Co and Ni.

The fifth subcomponent can improve a high-temperature accelerated lifetime and stabilize a change in capacitance at a Curie temperature (Tc) or more, thereby satisfying a desired temperature characteristic.

The fifth subcomponent may be an oxide including at least one of Sc, Y, La, Ac, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, , And the content thereof may be 0.3 to 6.0 moles.

If the content of the fifth subcomponent is less than 0.3 mol, the high temperature accelerated lifetime can be reduced, and the TCC (rate of change of the dielectric constant depending on the temperature) may become unstable. If the content of the fifth subcomponent is more than 6.0 mol, the firing temperature rises and the desired dielectric constant value A problem that can not be solved can occur, and the reliability can be reduced due to the secondary generation.

The sixth subcomponent can increase the IR and improve the high temperature accelerated lifetime.

The sixth subcomponent may be an oxide containing at least one of Cr, Mo, W, Mn, Fe, Co and Ni, and the content thereof may be 0.05 to 0.5 moles.

If the content of the sixth subcomponent is less than 0.05 mol, there is a problem that the high temperature accelerated lifetime is lowered and the TCC characteristic may be unstable. If the content of the sixth subcomponent is more than 0.5 mol, the C * R value may be lowered, The problem of enlargement may occur.

The subcomponent may include a seventh subcomponent which is an oxide or a carbide including at least one of V, Nb and Ta with respect to 100 moles of the main material.

Although the seventh subcomponent has a problem of lowering the IR, it can improve the high temperature accelerated lifetime and stabilize the capacity change at the Curie temperature or higher.

The initial specific surface area of the subcomponents is not important in the dielectric composition, but the specific surface area of the subcomponents at the time of finally mixing with the main component is important. A specific surface area of the sub-component of the point in time is mixed with the main component is preferably not less than each of 5.0m ² / g.

Hereinafter, a capacitor according to the present invention will be described with reference to the accompanying drawings.

FIG. 1 is a schematic perspective view showing a capacitor 100 according to an embodiment of the present invention, and FIG. 2 is a schematic cross-sectional view showing a capacitor 100 taken along line A-A 'in FIG.

1 and 2, a capacitor 100 according to an embodiment of the present invention includes a body 100 including a structure in which a dielectric layer 111 and first and second internal electrodes 121 and 122 are alternately stacked 110).

At both ends of the body 110, first and second external electrodes 131 and 132, which are respectively connected to the first and second internal electrodes 121 and 122 alternately arranged in the body 110, are formed have.

The shape of the body 110 is not particularly limited, but may be generally rectangular parallelepiped. In addition, the dimensions are not particularly limited and can be appropriately adjusted depending on the application.

The thickness of the dielectric layer 111 can be arbitrarily changed in accordance with the capacity design of the capacitor. In one embodiment of the present invention, the thickness of the dielectric layer after firing can be preferably 0.2 m or more per layer.

If the thickness of the dielectric layer is less than 0.2 占 퐉, the number of crystal grains present in one layer may be reduced and the reliability may be deteriorated.

The first and second internal electrodes 121 and 122 are laminated such that their cross-sections are alternately exposed on the surfaces of opposite ends of the body 110.

The first and second external electrodes 131 and 132 are formed at both ends of the body 110 and are electrically connected to the exposed end faces of the first and second internal electrodes 121 and 122, Circuit.

The conductive material contained in the first and second internal electrodes 121 and 122 is not particularly limited, but copper (Cu), nickel (Ni), or, in some cases, noble metal may be used according to one embodiment of the present invention .

The noble metal used as the conductive material may be palladium (Pd) or palladium (Pd) alloy.

The palladium (Pd) alloy may be an alloy of palladium (Pd) with at least one element selected from manganese (Mn), chromium (Cr), cobalt (Co) and aluminum ) May be 95% by weight or more.

The noble metal used as the conductive material may be silver (Ag) or a silver (Ag) alloy.

The thickness of the first and second internal electrodes 121 and 122 may be appropriately determined according to the application and the like, and is not particularly limited, but may be, for example, 0.1 to 5 占 퐉 or 0.1 to 2.5 占 퐉.

The conductive material contained in the first and second external electrodes 131 and 132 is not particularly limited, but nickel (Ni), copper (Cu), or an alloy thereof can be used.

The thickness of the first and second external electrodes 131 and 132 can be appropriately determined according to the application and the like, and is not particularly limited, but may be, for example, 10 to 50 탆.

The dielectric layer 111 constituting the body 110 may include a dielectric composition according to an embodiment of the present invention.

The dielectric composition according to one embodiment of the present invention includes a main component and a subcomponent represented by Ba _m TiO ₃ (0.995? _M ? 1.005), and the subcomponent includes an oxide including Li 0.5 to 1.5 mol of a first subcomponent of carbide, 0.8 to 1.8 mol of a second subcomponent of an oxide or carbide comprising at least one of B and Al, 0.6 to 3.0 mol of a third subcomponent of an oxide or carbide containing Si, 1.0 to 4.0 moles of a fourth subcomponent which is an oxide or a carbide containing at least one of Mg and Ba.

The subcomponent includes at least one of Sc, Y, La, Ac, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, 0.3 to 6.0 moles of the fifth subcomponent, and 0.05 to 0.5 mole of the sixth subcomponent, which is an oxide containing at least one of Cr, Mo, W, Mn, Fe, Co and Ni.

The subcomponent may include a seventh subcomponent which is an oxide or a carbide including at least one of V, Nb and Ta with respect to 100 moles of the main material.

The detailed description of the dielectric composition is the same as that of the dielectric composition according to one embodiment of the present invention described above, and thus will not be described here.

Hereinafter, the present invention will be described in more detail with reference to examples and comparative examples, but the scope of the present invention is not limited by the examples in order to facilitate a specific understanding of the invention.

(Example)

The composition and content of the main component and the subcomponent of the dielectric composition were adjusted as shown in Table 1 below.

In the preparation of the slurry, the main component and the subcomponent powder were mixed and dispersed in zirconia balls, and ethanol / toluene, dispersant and binder were mixed and then mixed using an APEX mill.

The prepared mixed slurry was formed into a molded sheet having a thickness of 3 탆 or less and a molded sheet having a thickness of 10 탆 to 13 탆 by using a compact bladed molding coater.

Nickel (Ni) inner electrodes were printed on a forming sheet having a thickness of 3 μm or less. The upper and lower covers were formed by laminating a cover sheet (10 μm to 13 μm thick) in several tens layers, (bar). The compression bar was cut into a body of 3216 (length x width 3.2 mm x 1.6 mm) using a cutter.

The cut body was calcined and calcined in a reducing atmosphere (0.1% H _{2 /} 99.9% N ₂ , H ₂ O / H ₂ / N ₂ atmosphere) at 900 to 1100 ° C for 2 hours.

The firing temperature of the body is a temperature having a value of 80 to 100 V / 占 퐉 or more when measuring a breakdown voltage (BDV). When the fracture cross section is observed at 30,000 times by a scanning electron microscope, ) Is not observed.

The fired body was subjected to a termination process and an electrode firing with a copper (Cu) paste to complete an external electrode.

Temperature capacitor, dielectric loss, TCC characteristic, and high-temperature accelerated lifetime were evaluated for the thus-completed capacitor.

Capacitance (MLCC) The room temperature capacitance and dielectric loss of the body were measured at 1 kHz, AC 1.0V / ㎛ using LCR-meter.

The change in capacitance with temperature was measured under the conditions of 1 kHz, AC 1.0 V / ㎛ in the temperature range of -55 ℃ to 125 ℃, and the rate of change of capacitance at 25 ℃ was calculated.

The dielectric constant (relative dielectric constant) of the capacitor (MLCC) chip was calculated from the capacitance, the dielectric thickness of the capacitor (MLCC) chip, the internal electrode area, and the number of layers.

The high temperature accelerated lifetime (high temperature IR step-up test) was carried out under the condition of 1Vr = 10V / 占 퐉 at 150 占 폚 to evaluate the high temperature reliability.

division Base material Main component Ba _m TiO ₃ The number of moles of each subcomponent per 100 moles of the mother material main component
Plasticity
Temperature
(° C) m 1st
Subcomponent Second
Subcomponent Third
Subcomponent Fourth
Subcomponent Fifth
Subcomponent 6th
Subcomponent Seventh
Subcomponent One 0.997 Li 0.5 B 0.8 Si 0.6 Mg 0.95
Ba 1.15 Dy 1.5 Mn 0.5 - 990 2 0.997 Li 0.85 B 1.0
Al 0.2 Si 1.2 Mg 0.65
Ba 1.90 Dy 0.3 Mn 0.1
Cr 0.1 - 920 3 0.996 Li 1.5 B 1.8 Si 3.0 Mg 0.95
Ba 3.05 Dy 0.4
Y 2.0 Mn 0.3 - 900 4 0.996 Li 0.5 B 0.6
Al 0.2 Si 0.6 Ba 1.2 Dy 1.2 Mn 0.1
Cr 0.1 - 1000 5 0.999 Li 0.5 B 0.8 Si 0.95 Mg 0.2
Ba 0.8 Dy 1.5
Ho 0.2 Mn 0.2
Cr 0.2 - 950 6 0.999 Li 0.5 B 1.0 Si 0.95 Mg 0.2
Ba 0.8 Dy 1.7 Mn 0.2
Cr 0.2 V 0.1 950 7 0.998 Li 0.9 B 1.6
Al 0.2 Si 1.5 Mg 1.05
Ba 1.15 Dy 0.9 Mn 0.3
Cr 0.2 - 970 8 0.998 Li 1.0 B 1.5 Si 2.8 Mg 0.5
Ba 3.0 Y 6.0 Mn 0.1 - 1000 9 * 0.997 Li 1.6 B 1.9 Si 2.2 Mg 1.1
Ba 1.3 Dy 0.4 Mn 0.1 - 890 10 * 0.997 Li 1.6 B 2.0 Si 3.2 Mg 1.5
Ba 2.5 Y 3.0 Mn 0.1
Cr 0.05 - 880 11 * 0.998 Li 0.5 B 0.7 Si 1.8 Mg 1.0
Ba 3.0
Zr 0.4 Dy 3.0 Mn 0.1 - 1060 12 * 0.998 Li 1.1 B 1.7 Si 3.0 Mg 0.95
Ba 3.0 Dy 7.0
Y 1.0 Mn 0.1 - 1100 13 * 0.998 Li 0.4 B 1.3 Si 1.9 Mg 0.5
Ba 1.95 Dy 1.4 Mn 0.1
Cr 0.55 - 1010 14 * 0.997 Li 0.8 B 0.6 Si 0.5 Mg 0.5
Ba 0.2 Dy 0.8 Mn 0.1 - 1130 15 * 1.008 Li 0.5 B 0.8 Si 0.6 Mg 0.95
Ba 1.15 Dy 1.5 Mn 0.5 - 1140

*: Comparative Example

division
Body Characteristics Character judgment Dielectric constant TCC
(%)
(85 DEG C) TCC
(%)
(125 DEG C) High temperature accelerated life (Vr)
(150 DEG C) heredity
a constant TCC
(85 DEG C) TCC
(125 DEG C) High temperature accelerated life
(150 DEG C) One 2300 -One -13 6 ○ ○ ○ × 2 2500 2 -14 4 ○ ○ ○ ○ 3 2000 0 -10 5 ○ ○ ○ ○ 4 2100 -4 -15 3 ○ ○ ○ ○ 5 2200 -One -9 4 ○ ○ ○ ○ 6 2200 -One -8 4 ○ ○ ○ ○ 7 2400 -2 -13 6 ○ ○ ○ ○ 8 1900 -2 -7 4 ○ ○ ○ ○ 9 * 2600 -7 -23 2 ○ ○ × × 10 * 1800 One -7 2 ○ ○ ○ × 11 * 2200 -5 -18 4 ○ ○ × ○ 12 * 1700 0 -6 3 ○ ○ ○ ○ 13 * 2200 -3 -11 4 ○ ○ ○ ○ 14 * 2700 -8 -26 3 ○ ○ × ○ 15 * 2000 -4 -8 3 ○ ○ ○ ○

O: Good, X: Bad.

*: Comparative Example

Referring to Table 2, since the capacitor including the dielectric layer having the composition of the dielectric composition according to one embodiment of the present invention has a tendency to have a value of 3Vr or more which is fired at 1000 ° C and has a stable high temperature accelerated life, It can be seen that excellent reliability can be secured.

On the other hand, in the case of Comparative Example 9, the content of the first subcomponent and the second subcomponent was unsatisfactory in the range of the present invention. In Comparative Example 10, the content of the third subcomponent was not satisfied, It can be seen that there are side effects.

In Comparative Examples 11 to 13, the content range of the fourth subcomponent, the fifth subcomponent, and the sixth subcomponent was not satisfied, indicating that low-temperature firing was not performed.

Comparative Example 14 It was also found that the content range of the fourth subcomponent was not satisfied, and it was found that the firing temperature was elevated in the range exceeding 1000 캜.

In the case of Comparative Example 15, it is found that the value of m is too high and the firing temperature becomes 1000 ° C or more.

FIG. 3 (a) is a scanning electron microscope photograph of a conventional capacitor section, and FIG. 3 (b) is a scanning electron microscope photograph of a capacitor section according to an embodiment of the present invention.

FIG. 3 (a) shows the internal electrodes of the capacitor fired at 1200 ° C., and it can be seen that the interconnectivity of the internal electrodes is low due to the high firing temperature in the conventional case.

FIG. 3 (b) is a cross-sectional view illustrating internal electrodes of a capacitor according to an embodiment of the present invention, which is fired at 1000 ° C. or less.

The present invention is not limited to the above-described embodiment and the accompanying drawings, but is intended to be limited by the appended claims.

It will be apparent to those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. something to do.

100: Capacitor 110: Body
111: dielectric layer 121, 122: first and second internal electrodes
131, 132: first and second outer electrodes

Claims (10)

Ba _m TiO ₃ (0.995? _M ? 1.005), and the subcomponent includes a main component and a subcomponent,
Wherein the subcomponent includes, for 100 moles of the main component,
0.5 to 1.5 moles of a first subcomponent which is an oxide or a carbide containing Li;
0.8 to 1.8 moles of a second subcomponent which is an oxide or a carbide including at least one of B and Al;
0.6 to 3.0 moles of a third subcomponent, which is an oxide or a carbide containing Si; And
1.0 to 4.0 moles of a fourth subcomponent which is an oxide or a carbide including at least one of Mg and Ba.
The method of claim 1, wherein
Wherein the subcomponent includes, for 100 moles of the main component,
5 to 5 mol of an oxide containing at least one of Sc, Y, La, Ac, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Subcomponents; And
0.05 to 0.5 mol of a sixth subcomponent, which is an oxide containing at least one of Cr, Mo, W, Mn, Fe, Co and Ni.
The method according to claim 1,
Wherein the subcomponent includes, for 100 moles of the main component,
And a seventh subcomponent which is an oxide or a carbide containing at least one of V, Nb and Ta.
The method according to claim 1,
The value of m in Ba _m TiO ₃ is 0.996? M? 0.999.
The method according to claim 1,
The dielectric composition satisfies 0.6? (A + b) / c? 1.8 when the content of the first subcomponent is a, the content of the second subcomponent is b, and the content of the third subcomponent is c.
A body including a structure in which a dielectric layer and first and second internal electrodes are alternately laminated; And
And first and second external electrodes formed at both ends of the body and electrically connected to the first and second internal electrodes,
Wherein the dielectric layer contains a main component and a minor component represented by Ba _m TiO ₃ (0.995? _M ? 1.005), and the subcomponent includes 0.5 to 1.5 moles of an oxide or a carbide containing Li relative to 100 moles of the main component 0.8 to 1.8 moles of a second subcomponent which is an oxide or a carbide including at least one subcomponent, B and Al, 0.6 to 3.0 moles of a third subcomponent of an oxide or carbide containing Si, and at least one of Mg and Ba 1.0 to 4.0 moles of the fourth subcomponent, which is an oxide or a carbide.
The method according to claim 6,
The subcomponent includes at least one of Sc, Y, La, Ac, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, 0.3 to 6.0 moles of the fifth subcomponent and 0.05 to 0.5 moles of the sixth subcomponent which is an oxide containing at least one of Cr, Mo, W, Mn, Fe, Co, and Ni.
The method according to claim 6,
Wherein the subcomponent further comprises a seventh subcomponent which is an oxide or a carbide containing at least one of V, Nb and Ta with respect to 100 moles of the mother material main component.
The method according to claim 6,
And the m value in the Ba _m TiO ₃ satisfies 0.996? M? 0.999.
The method according to claim 6,
(A + b) / c? 1.8 when the content of the first subcomponent is a, the content of the second subcomponent is b, and the content of the third subcomponent is c.

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