KR20180041471A - METHOD FOR MANUFACTURING GaN WAFER AND GaN WAFER MANUFACTURED THEREBY - Google Patents

METHOD FOR MANUFACTURING GaN WAFER AND GaN WAFER MANUFACTURED THEREBY Download PDF

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KR20180041471A
KR20180041471A KR1020160133677A KR20160133677A KR20180041471A KR 20180041471 A KR20180041471 A KR 20180041471A KR 1020160133677 A KR1020160133677 A KR 1020160133677A KR 20160133677 A KR20160133677 A KR 20160133677A KR 20180041471 A KR20180041471 A KR 20180041471A
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gallium nitride
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substrate
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한재용
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한재용
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/0242Crystalline insulating materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02373Group 14 semiconducting materials
    • H01L21/02381Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02387Group 13/15 materials
    • H01L21/02389Nitrides
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/1026Compound semiconductors
    • H01L2924/1032III-V
    • H01L2924/1033Gallium nitride [GaN]

Abstract

The present invention relates to a method of manufacturing a gallium nitride wafer and a wafer thereof,
Growing a defective three-dimensional GaN unevenness layer on the substrate on which at least one of the SiC layer, the AlN layer and the AlGaN layer is formed on the Si layer while the temperature inside the reactor is maintained at the first temperature; Changing a temperature inside the reactor to a second temperature to grow a two-dimensional GaN flat layer having few defects on the three-dimensional GaN uneven layer; Fixing a temperature inside the reactor in a first temperature range and growing a GaN layer on the two-dimensional GaN flat layer with crystal defects substantially uniformly distributed from top to bottom according to the thickness; Etching a part of the Si layer, the three-dimensional uneven layer and the two-dimensional flat layer by injecting an etching material into the reactor; And a step of cooling the gallium nitride layer and then subjecting the gallium nitride layer to a mirror-surface treatment to produce a gallium nitride wafer.

Description

METHOD FOR MANUFACTURING GaN WAFER AND GaN WAFER MANUFACTURED THEREBY BACKGROUND OF THE INVENTION [0001]

The present invention relates to a method of manufacturing a gallium nitride wafer and more particularly to a method of manufacturing a gallium nitride wafer by growing a gallium nitride layer on a template substrate having at least one of an SiC layer, an AlN layer, and an AlGaN layer formed on a Si layer To a method of manufacturing a large diameter gallium nitride wafer without warpage.

Conventional blue LEDs or white LEDs are fabricated by growing a gallium nitride thin film on a sapphire substrate, but have very high current densities (e.g., 1000 A / cm 2) such as Ultra High Brightness LEDs and blue violet LDs 2 or more) A gallium nitride wafer separated from a sapphire substrate is required to manufacture a required gallium nitride device. Since the defect density of the gallium nitride thin film grown on the sapphire substrate is about 10 8 to 10 9 / cm 2 , the lifetime of the device is reduced due to the high defect density. On the other hand, since the defect density of the gallium nitride wafer is 10 7 / cm 2 or less, the defect density of the gallium nitride thin film grown thereon is also 10 7 / cm 2 The lifetime of the device is increased.

According to the conventional gallium nitride wafer manufacturing process, after a single crystal gallium nitride thick film is grown on a heterogeneous substrate such as a sapphire substrate, the substrate is taken out from the reactor, and a method of separating the substrate using a laser, The heterogeneous substrate and the gallium nitride single crystal thick film were separated from each other by an etching method or a physical processing method. Thereafter, a gallium nitride wafer was produced through mirror-surface processing of the separated thick film of gallium nitride single crystal.

Since a thick GaN single crystal thick film is grown on a heterogeneous substrate, a cooling process is performed to take out the substrate from the reactor. Since there is a difference in thermal expansion coefficient of about 25.5% between the sapphire single crystal and the gallium nitride single crystal, There is a problem that a tensile stress is generated and a compressive stress is generated in a thick film of gallium nitride single crystal and a crack easily occurs. In addition, the sapphire substrate has a cost problem that the price increases sharply as the diameter increases, and that the sapphire substrate has a maximum diameter of about 6 " at a high price.

Since the Si substrate is cheap and has a large-sized high-quality substrate, there is an advantage in that a low-priced and large-scale curing can be easily performed when a gallium nitride substrate is manufactured using a Si substrate, but the ratio between Si single crystal and gallium nitride single crystal is about 55.7% There is a problem that cracks occur more seriously than in the case of using sapphire. Recently, a technique of using a SiC or AlN or AlGaN layer to control cracks has been developed, and it has become common to grow a gallium nitride layer with a thickness of several 탆 without cracks. In addition, when gallium nitride is grown on a Si substrate by the HVPE (Hydride Vapor Phase Epitaxy) method, gallium chloride (GaCl), which is a raw material gas of gallium, reacts with Si to cause a melt-back phenomenon (Marchand et al., 1999 MRS Internet J Nitride Semicond. Res. 4). In this case, MOCVD is usually used to grow a few ㎛ thick SiC or AlN or AlGaN layer on a Si substrate, and this is grown on a gallium nitride on Si template substrate This gallium nitride on Si template substrate is used as an initial substrate and gallium nitride is grown thickly thereon by the HVPE method. Then, the Si substrate is completely etched in the reactor using an etching gas such as HCl gas A technique for producing a gallium nitride substrate by etching and removing is being developed. However, as a method of growing gallium nitride thick on gallium nitride on Si using a conventional HVPE growth method, there is a problem that the manufactured gallium nitride substrate is recessed and quality uniformity as a substrate is lowered.

Therefore, when a gallium nitride substrate is manufactured using a Si substrate, there are many advantages, but a new method for manufacturing a gallium nitride substrate without a bow is required

The present invention has been made to overcome the problems of the prior art as described above, and it is an object of the present invention to provide a method of manufacturing a gallium nitride substrate by forming a flat layer capable of flatly growing gallium nitride, And the like.

It is another object of the present invention to provide a method for producing a gallium nitride wafer of a larger diameter at a lower cost than a conventional gallium nitride substrate manufacturing process using a substrate such as sapphire.

According to another aspect of the present invention, there is provided a method of manufacturing a gallium nitride wafer,

Growing a defective three-dimensional GaN unevenness layer on the substrate on which at least one of the SiC layer, the AlN layer and the AlGaN layer is formed on the Si layer while the temperature inside the reactor is maintained at the first temperature; Changing a temperature inside the reactor to a second temperature to grow a two-dimensional GaN flat layer having few defects on the three-dimensional GaN uneven layer; Fixing a temperature inside the reactor in a first temperature range and growing a GaN layer on the two-dimensional GaN flat layer with crystal defects substantially uniformly distributed from top to bottom according to the thickness; Etching a part of the Si layer, the three-dimensional uneven layer and the two-dimensional flat layer by injecting an etching material into the reactor; And cooling the gallium nitride layer, followed by mirror-polishing to produce a gallium nitride wafer.

According to an embodiment of the present invention, a step of growing at least one of a SiC layer, an AlN layer, and an AlGaN layer on the Si layer of the substrate prior to growing the GaN three-dimensional concave- .

According to an embodiment of the present invention, the step of growing the layer of at least one of the SiC layer, the AlN layer and the AlGaN layer on the Si layer of the substrate may be followed by cleaning the substrate surface.

According to an embodiment of the present invention, the step of cleaning the surface of the substrate may include the steps of setting the reactor at a first temperature, injecting one of nitrogen, hydrogen, and nitrogen-hydrogen mixed gas into the reactor as a carrier gas, 1 slm for 1 to 3 minutes to clean the surface of the substrate.

According to an embodiment of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: nitriding a substrate surface after cleaning the substrate surface; . ≪ / RTI >

According to an embodiment of the present invention, nitriding the surface of the substrate may include nitriding the surface of the substrate by supplying NH 3 gas into the reactor for 4 to 6 minutes into the reactor.

According to an embodiment of the present invention, the step of growing the GaN concavo-convex layer includes: supplying the HCl in an amount of 300 sccm to the inside of the reactor at a first temperature in the range of 900 to 1100 and supplying 4.5 slm of NH 3 .

According to an embodiment of the present invention, the second temperature may be in the range of 950 to 1150 to grow the GaN flat layer.

According to an embodiment of the present invention, the step of growing the GaN flat layer may include the step of growing the gallium nitride layer at a growth rate of the GaN uneven layer To 30% to 90% of the growth rate.

According to an embodiment of the present invention, the step of growing the GaN flat layer may include a step of growing the GaN flattened layer by growing the NH 3 / GaCl gas ratio to 2 ~ 12. ≪ / RTI >

According to an embodiment of the present invention, the step of growing the GaN concavo-convex layer may be performed such that the thickness of the GaN concavo-convex layer is 50 mu m to 500 mu m.

According to an embodiment of the present invention, the step of growing the GaN flat layer may be performed such that the GaN flat layer has a thickness of 10 mu m to 300 mu m.

According to an embodiment of the present invention, the step of growing a GaN layer having a uniform defect may be performed such that the first temperature is in the range of 900 to 1100 and the crystal growth rate is in the range of 50 to 300 mu m / hr And the GaN layer is grown by fixing the NH 3 / GaCl gas ratio to 5 to 15.

According to one embodiment of the present invention, the etching step may be to supply the HCl gas at 800 sccm and etch the Si layer for 30 minutes.

According to an embodiment of the present invention, the step of cooling and mirror finishing a GaN wafer includes: rounding a GaN substrate to a diameter of 100 mm; Round EDGE processing of the edge of the circular processed substrate; Polishing the front and back surfaces of the GaN substrate with a grinding apparatus in a flat manner; Lapping the front surface stepwise using a diamond slurry; And chemically-mechanically mirror polishing the polished wrapping surface using a CMP slurry.

The gallium nitride wafer according to an embodiment of the present invention may include a gallium nitride wafer manufactured by the above-described gallium nitride wafer manufacturing method.

The present invention can prevent the gallium nitride single crystal thick film from bending during the process of forming the gallium nitride flat layer and then growing the gallium nitride layer in the process of producing the gallium nitride wafer,

It is possible to produce a gallium nitride wafer of excellent quality with very few crystal defects as compared with the case where only a conventional sapphire substrate or Si substrate is used. In addition, a gallium nitride wafer of a larger diameter can be produced at a lower cost than the conventional process.

BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of the specification, illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.
FIG. 1 is a cross-sectional view of a HVPE ( Hydride Vapor Phase Epitaxy ) growth device.
2 is a flow chart of a method for manufacturing a gallium nitride wafer according to an embodiment of the present invention.
3 is a table comparing the physical properties of SiC, Si, and sapphire single crystal with respect to the gallium nitride layer.
Fig. 4 shows a gallium nitride substrate on which warping occurs and a wafer on which the gallium nitride substrate is processed.
5 is a cross-sectional view of a gallium nitride wafer produced in accordance with an embodiment of the present invention.
6 is a photograph of the surface of the uneven layer of the gallium nitride wafer produced according to an embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The present invention is capable of various modifications and various embodiments, and specific embodiments will be described in detail below with reference to the accompanying drawings.

The following examples are provided to aid in a comprehensive understanding of the methods, apparatus, and / or systems described herein. However, this is merely an example and the present invention is not limited thereto.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. The following terms are defined in consideration of the functions of the present invention, and may be changed according to the intention or custom of the user, the operator, and the like. Therefore, the definition should be based on the contents throughout this specification. The terms used in the detailed description are intended only to describe embodiments of the invention and should in no way be limiting. Unless specifically stated otherwise, the singular forms of the expressions include plural forms of meanings. In this description, the expressions "comprising" or "comprising" are intended to indicate certain features, numbers, steps, operations, elements, parts or combinations thereof, Should not be construed to preclude the presence or possibility of other features, numbers, steps, operations, elements, portions or combinations thereof.

It is also to be understood that the terms first, second, etc. may be used to describe various components, but the components are not limited by the terms, and the terms may be used to distinguish one component from another .

Hereinafter, exemplary embodiments of a method for manufacturing a gallium nitride wafer and a wafer thereof according to the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a cross-sectional view of a HVPE ( Hydride Vapor Phase Epitaxy ) growth device.

Referring to Figure 1, a HVPE ( Hydride Vapor Phase Epitaxy ) growth apparatus may include a reactor.

The reactor may be divided into a source zone 101 and a growth zone 102.

The source zone 101 can supply a raw material for manufacturing a substrate. The raw material may include a metal or a gas, and may include a result of reacting the input raw material.

A tube through which the raw material can be supplied may be connected to the inside of the source zone 101, and may contain a raw material metal therein.

The growth zone 102 may have a substrate to be grown according to an embodiment of the present invention and may grow a layer according to the growth step on the substrate.

The growth zone 102 may be connected to the source zone 101. The growth zone 102 may grow the substrate using the source material supplied from the source zone 101.

According to an embodiment of the present invention, a gallium metal 103 may be present inside the source zone 101. The gallium metal 103 may serve to provide gallium when growing a gallium nitride substrate.

A tube for supplying a raw material may be connected to the inside of the source zone 101. The tube for supplying the raw material, which is connected to the inside of the source zone 101, may include an NH 3 supply tube 104, an HCl supply tube 105 and a dopant supply tube 106.

The NH 3 supply tube 104 can supply NH 3 gas and can be a source of hydrogen. The HCl supply tube 105 may inject HCl gas into the source zone 101. The dopant supply tube 106 may supply a dopant gas to the source zone 101.

According to one embodiment of the present invention, HVPE ( Hydride Vapor Phase Epitaxy) growing device may include a gas cabinet 107 and the gas supply device 108. The The gas cabinet 107 can store the source gas necessary for growth of the gallium nitride substrate. The gas cabinet 107 may be formed of a plurality of cabinets individually storing the raw material gas. The gas supply device 108 may supply the gas stored in the gas cabinet 107 to the source zone 101 through a tube for supplying the raw material. The gas supply 108 may be connected to a computer to control the gas supply according to the programming of the computer.

According to one embodiment of the present invention, HVPE ( Hydride Vapor Phase Epitaxy) growth apparatus may comprise a source zone 101 and the growth zone (the first heating furnace for heating 102) 109 and 110, the second heating furnace. The first heating furnace 109 and the second heating furnace 110 can adjust the source zone 101 and the growth zone 102 to be the required temperature for each step. At this time, the first heating furnace 109 and the second heating furnace 110 may control the temperature according to computer programming.

According to an embodiment of the present invention, the substrate 111 may be positioned within the growth zone 102. The substrate 111 is made of HVPE ( Hydride Vapor Phase Epitaxy ) growth of a particular layer according to the conditions provided in the growth apparatus. The substrate 111 may be moved by a substrate transfer device.

According to one embodiment of the present invention, HVPE ( Hydride Vapor Phase Epitaxy) growing apparatus may comprise a washer (scrubber).

According to an embodiment of the present invention, in the source zone 101, the reaction as shown in formula (1) can be performed while maintaining a proper temperature by the first heating furnace 109.

[Chemical Formula 1]

Ga + HCl -> GaCl + 1 / 2H 2

At this time, a substrate for growing a gallium nitride layer may be mounted on the growth zone 102. As the substrate, a substrate such as sapphire, SiC, GaAs, Sii, or gallium nitride may be used.

When the second heating furnace 110 maintains the growth zone 102 at a temperature suitable for growing the gallium nitride layer, GaCl 3 and NH 3 gas can be supplied to the growth zone 102. At this time, a reaction as shown in Chemical Formula 2 may be performed to grow a gallium nitride layer on the substrate.

(2)

GaCl + NH 3 → GaN + HCl + H 2

2 is a flow chart of a method for fabricating a gallium nitride wafer according to an embodiment of the present invention.

Referring to FIG. 2, in step S310, the substrate 111 may be mounted on the reactor of the HVPE growth apparatus. The reactor may be divided into a source zone 101 and a growth zone 102 and the substrate 111 may be mounted in a growth zone 102 of an HVPE growth reactor. At this time, the substrate 111 mounted on the growth zone 102 may include at least one of Si and AlN or AlGaN layers formed on the Si layer and the Si layer. The crystal orientation of the Si substrate may be (111), and the SiC or AlN or AlGaN layer formed on the Si layer may have a thickness of 0.1 mu m to 10 mu m.

At this time, the source zone 101 may be provided with a boat containing metal. The metal may be Ga metal. In the source zone 101, an NH 3 supply tube 104, which receives a supply amount control of the gas supply device connected to the gas cabinet, a HCl supply tube 105 ), And a dopant supply tube 106 for doping may be connected.

In step S320, after the substrate 111 is mounted on the growth zone 102, the template substrate can be cleaned. Specifically, a nitrogen, water, or nitrogen-hydrogen mixed gas is injected into the growth zone 101 with the carrier gas being adjusted to the first temperature, and HCl gas is introduced into the growth zone 102 at a rate of 1 - And the surface of the template substrate is etched by supplying it for 3 minutes to perform a cleaning operation for removing foreign substances or impurities on the surface. At this time, the first temperature may be 900-1000 < 0 > C.

In step S330, the surface of the template substrate on which the cleaning operation has been completed can be nitrided. At this time, the supply of the HCl gas is stopped in the gas supply device 108, and the surface of the template substrate can be nitrided by supplying NH 3 gas. At this time, the NH 3 gas may be supplied into the growth zone at 5 slm for 5 minutes to nitride the surface of the template substrate.

In step S340, a gallium nitride uneven layer may be grown on the template substrate at the first temperature. At this time, the growth of the gallium nitride layer can be performed by using the reaction of the above formula (2). At this time, the gas supply device 108 may be supplied to the NH 3 gas and HCl gas through the NH 3 supply tube 104 and the HCl supply tube 105 in the source zone (101). The supplied HCl gas can react with the Ga metal to form GaCl. The GaCl and NH 3 gases react with each other as shown in Formula 2 to grow a gallium nitride layer on the template substrate in the growth zone 102 of the reactor.

At this time, the HCl gas may be supplied at 300 sccm, and the NH 3 gas may be supplied at 4.5 slm. The growth rate of the gallium nitride layer grown on the template substrate under these conditions may be about 150 [mu] m / hr. And grown under the above conditions for about 20 minutes to 3 hours and 20 minutes to form a gallium nitride layer having a thickness of about 50 μm to 500 μm on the template substrate. At this time, the gallium nitride layer may be a gallium nitride layer having many defects.

In step S350, the gallium nitride flat layer having few defects on the gallium nitride unevenness layer having many defects in the three-dimensional shape generated in step S340 may be grown. The gallium nitride flatness layer may be grown to a second temperature higher than the first temperature or the growth rate of the gallium nitride grains may be decreased by decreasing the growth rate of the gallium nitride uneven layer or by lowering the NH 3 / When the gallium layer is grown, the vertical growth rate of the gallium nitride layer is slowed down and the horizontal growth rate is accelerated, so that the lower part of the gallium nitride layer having many defects in three dimensions can be buried and a flat two-dimensional gallium nitride layer can be grown.

At this time, the second temperature may be 950 to 1150 ° C. The rate of decreasing the growth rate of the uneven layer may be 30 to 90%. The NH 3 / GaCl gas ratio can be lowered to about 2 to 12.

The increase in the horizontal growth rate means that the diffusion distance of gallium or nitrogen atoms increases at the growth interface where the crystal growth proceeds, so that the probability that the gallium or nitrogen source will fill the defective region and settle in the original site of the ideal gallium nitride crystal The effect of reducing crystal defects is obtained. That is, the gallium nitride unevenness layer having many defects in the three-dimensional shape is filled, and the gallium nitride flat layer having few defects in the two-dimensional shape is converted. At this time, the thickness of the two-dimensional gallium nitride flat layer may be 10 to 300 탆.

In step S360, a gallium nitride layer having a uniform defect can be grown on the gallium nitride flat layer having few defects in two-dimensional form. At this time, the temperature can be fixed at a constant temperature in the first temperature range, the crystal growth rate can be fixed to a fixed value, and the NH 3 / GaCl gas ratio can be fixed to a constant value. Under the above conditions, the crystal growth rate range may be 50 to 300 탆 / hr, and the NH 3 / GaCl gas ratio may be in the range of 5 to 15. For example, when a GaN layer is grown for 6 hours at a growth rate of 120 탆 / hr, a GaN layer having a thickness of 720 탆 is obtained, in which crystal defects are generally uniformly distributed from the top to the bottom.

In step S370, after the gallium nitride substrate has been successfully grown, an etching material is injected into the reactor, particularly, into the growth zone 102 of the reactor to remove the Si substrate to form a Si layer, a gallium nitride uneven layer, and a gallium nitride flat layer A part of which can be removed by etching. The etching may be carried out through a reaction represented by the general formula (3).

(3)

Si + 4HCl → SiCl 4 + 2H 2

At this time, the etching material of the etching process may be HCl gas. In the etching process, the Si layer can be completely removed by supplying HCl gas at 800 sccm and etching the Si layer according to the reaction as shown in Formula 3 for about 30 minutes. The etching rate of the Si layer may be preferably 100 m / hr to 1500 m / hr. Since removal of some of the two-dimensional gallium nitride flat layers grown on the defective three-dimensional gallium nitride unevenness layer and the gallium nitride unevenness layer together can completely remove the defective layer causing the warpage, After removing the layer, HCl gas was continuously supplied at 800 sccm for about 30 minutes to remove the defective GaN layer according to the reaction shown in Chemical Formula (4). The thickness of the removed GaN layer was about 200 mu m.

[Chemical Formula 4]

GaN + HCl? GaCl + 1 / 2H 2 + 1 / 2N 2

After the Si layer and the gallium nitride layer having many defects are removed by etching in the step S380, the temperature of the source zone 101 and the growth zone 102 of the reactor is cooled to room temperature. Thereafter, It is possible to obtain a substrate on which a gallium nitride layer without a hole is formed.

In step S390, the gallium nitride layer of the gallium nitride substrate obtained in step S380 may be mirror-finished to produce a gallium nitride wafer. At this time, the gallium nitride substrate having a thickness of about 700 mu m can be round-shaped to a diameter of 100 mm. After the edge of the round-shaped substrate is round-edged, the front surface (Ga surface) and the rear surface (N surface) of the gallium nitride substrate can be polished flat by a grinding apparatus. The front surface of the gallium nitride substrate can be lapped step by step using a diamond slurry. Thereafter, the polished lapped surface is chemically-mechanically mirror-polished by using a CMP slurry to completely remove the damaged layer to obtain a surface roughness Ra of 0.3 nm or less.

The gallium nitride wafer manufactured according to the gallium nitride wafer manufacturing method may have a radius of curvature of 10 m or more, a dislocation defect density of the substrate of about 2 x 10 6 / cm 2, and an X-ray half width of about 30 to 70 arcsec. In addition, the gallium nitride wafer manufacturing method according to an embodiment of the present invention can significantly improve the yield and improve the productivity, compared with the conventional manufacturing method, and can easily manufacture a large diameter gallium nitride wafer having a diameter of 6 & .

3 is a table comparing the physical properties of SiC, Si, and sapphire single crystal with respect to the gallium nitride layer.

Referring to FIG. 3, the difference between the lattice constant and the thermal expansion coefficient according to the type of the substrate on which gallium nitride and gallium nitride can be grown can be seen.

If the absolute value of the difference of the lattice constants is large, defects of the gallium nitride layer may be increased when gallium nitride is grown on the material. 3, it is possible to grow a substrate having fewest defects when growing gallium nitride on a SiC substrate.

When the difference in thermal expansion coefficient increases, the ratio of shrinkage of each layer in the cooling process becomes different, and the possibility of cracks and warpage increases. 3, cracking and warping can be minimized when gallium nitride is grown on a sapphire substrate.

Fig. 4 shows a gallium nitride substrate on which warping occurs and a wafer on which the gallium nitride substrate is processed.

Referring to Fig. 4 (a), a gallium nitride substrate having crystallographically concave crystal faces is shown. A stress is generated in the gallium nitride substrate in the direction of the arrow, and a warped gallium nitride substrate may be formed. Conventional gallium nitride substrate fabrication methods may cause more warpage.

Referring to FIG. 4 (b), it can be seen that the crystallinity of the substrate surface of the wafer formed by processing the warped gallium nitride substrate may vary depending on the position. At this time, as the warpage increases, the crystal orientation of the substrate surface can be greatly changed. If the crystal direction is changed, the wavelength of the light may be changed when the wafer is processed to fabricate the LED, thereby deteriorating the quality.

5 is a cross-sectional view of a gallium nitride wafer produced in accordance with an embodiment of the present invention.

Referring to FIG. 5, a method of fabricating a gallium nitride wafer according to an embodiment of the present invention may include a layer 502 formed of an SiC layer, an AlN layer, and an AlGaN layer on a Si substrate 501. The layer 502 formed of any one of the SiC layer, the AlN layer, and the AlGaN layer may be formed to a thickness of several micrometers.

According to one embodiment of the present invention, the method for fabricating a gallium nitride wafer can grow a multi-defect cracked GaN concavo-convex layer 503 on a layer 502 formed of any one of the SiC layer, the AlN layer and the AlGaN layer. The multi-defect GaN concave-convex layer 503 can prevent the occurrence of warpage and cracks during cooling.

According to one embodiment of the present invention, a gallium nitride wafer manufacturing method can grow a low-defect GaN flat layer 504 on the multi-defect GaN concavo-convex layer 503. The low-defect GaN flat layer 504 can function to grow a gallium nitride wafer having no warp than that of growing a gallium nitride wafer on the multi-defect GaN concavo-convex layer 503.

According to one embodiment of the present invention, the GaN wafer fabrication method can grow a GaN layer 505 having uniform defects from the bottom to the top on the low-defect GaN flat layer 504. The GaN layer 505 having a uniform defect is formed on the GaN concavo-convex layer 503 and the low-defect GaN flat layer 504, so that the GaN layer 505 has few defects in the cooling process and little cracks or warps It can grow.

According to an embodiment of the present invention, the portion 520 to be removed by etching may be removed while leaving the portion 510 made of gallium nitride wafer after growing the defect-uniform GaN layer 505. The portion 520 to be removed by the etching includes a layer 502 formed of any one of the Si substrate 501, the SiC layer, the AlN layer and the AlGaN layer, the multi-defect GaN uneven layer 503 and the low-defect GaN flat layer 504 ). ≪ / RTI > It can be removed as an unnecessary portion other than the portion 510 made of a gallium nitride wafer. The portion 510 made of the GaN wafer may be composed of a GaN layer 505 having a uniform defect and a portion of the GaN flat layer 504 having a low defect.

6 is a photograph of the surface of the uneven layer of the gallium nitride wafer produced according to an embodiment of the present invention.

Referring to FIG. 6, it can be seen that the surface of the uneven layer grown in step S340 grows into a three-dimensional shape having many defects. Since the concavo-convex layer is not a flat surface but has a concavo-convex shape including a plurality of defects, the concavo-convex layer functions to absorb a stress causing warping or cracking, thereby preventing occurrence of warping and cracking.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, . Therefore, the scope of the present invention should not be limited to the described embodiments, but should be determined by the scope of the appended claims, as well as the appended claims.

501: Si substrate
502: layer formed of any one of SiC layer, AlN layer and AlGaN layer
503: Defective GaN uneven layer
504: Low defect GaN flat layer
505: Defective GaN layer
510: a portion made of a gallium nitride wafer
520: portion removed by etching

Claims (9)

  1. A method of manufacturing a gallium nitride wafer,
    Growing a GaN unevenness layer on a template substrate having at least one of an SiC layer, an AlN layer and an AlGaN layer formed on an upper part of the Si layer while maintaining a temperature inside the reactor at a first temperature;
    Growing a GaN flat layer having a flat top surface by filling the gaps of the GaN unevenness layer by raising the temperature inside the reactor to a second temperature, decreasing the growth rate of the GaN layer, lowering the NH 3 / GaCl gas ratio;
    Fixing the temperature inside the reactor to a first temperature and fixing the crystal growth rate and the NH 3 / GaCl ratio to grow a GaN layer having crystal defects uniformly distributed on the GaN flat layer;
    Etching a part of the Si layer, the concavo-convex layer and the flat layer by injecting an etching material into the reactor; And
    And cooling the gallium nitride layer and then subjecting the gallium nitride layer to a mirror surface treatment to produce a gallium nitride wafer.
  2. The method according to claim 1,
    Prior to the step of growing the GaN three-dimensional concavo-convex layer,
    And growing a layer of at least one of an SiC layer, an AlN layer, and an AlGaN layer on the Si layer to form a template substrate.
  3. The method according to claim 1,
    The step of growing the GaN concave-
    The first temperature is produced in the gallium nitride wafer characterized in that a 900 to 1100 is within the range, the growth rate of the GaN is within 50㎛ / hr to 300㎛ / hr, NH 3 / GaCl gas ratio of 5 to 15 Way.
  4. The method according to claim 1,
    The step of growing the GaN flat layer may include:
    The second temperature is in the range of 950 to 1150, and the growth rate of the gallium nitride is reduced to 30% to 90% of the growth rate of the GaN uneven layer and the NH 3 / GaCl gas ratio is reduced to 2 to 12 Gt; a < / RTI > gallium nitride wafer.
  5. The method according to claim 1,
    The step of growing the GaN concave-
    And the thickness of the GaN unevenness layer is 50 占 퐉 to 300 占 퐉.
  6. The method according to claim 1,
    The step of growing the GaN flat layer may include:
    And the GaN flat layer is grown to have a thickness of 10 to 300 占 퐉.
  7. The method according to claim 1,
    The step of growing a defect-uniform GaN layer includes:
    The first temperature is within the range 900 to 1100, and fixed in a range of the crystal growth rate 50㎛ / hr to 300㎛ / hr, to secure the NH 3 / GaCl gas ratio of 5 to 15 to grow a GaN layer ≪ / RTI >
  8. The method according to claim 1,
    Wherein the etching comprises:
    HCl gas is supplied from the back surface of the Si substrate to etch a portion of the Si layer, the uneven layer and the flat layer at an etching rate of 100 占 퐉 / hr to 1500 占 퐉 / hr.
  9. A gallium nitride wafer produced by the manufacturing method according to any one of claims 1 to 9.

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070025081A (en) * 2005-08-31 2007-03-08 주식회사 실트론 Method for manufacturing gallium nitride substrate
JP2009519202A (en) * 2005-12-12 2009-05-14 キーマ テクノロジーズ, インク. Group III nitride product and method for producing the same
KR101335937B1 (en) * 2012-06-04 2013-12-04 주식회사 루미스탈 Method for fabricating gan wafer using llo(laser lift-off) process
KR20140020028A (en) * 2012-08-07 2014-02-18 엘지이노텍 주식회사 Uv light emitting device and light emitting device package
KR20150112335A (en) * 2014-03-27 2015-10-07 주식회사 루미스탈 Method for fabricating gallium nitride and method for manufacturing substrate of gallium nitride with using the same
KR20150133908A (en) * 2014-05-20 2015-12-01 주식회사 루미스탈 METHOD FOR MANUFACTURING GaN WAFER

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070025081A (en) * 2005-08-31 2007-03-08 주식회사 실트론 Method for manufacturing gallium nitride substrate
JP2009519202A (en) * 2005-12-12 2009-05-14 キーマ テクノロジーズ, インク. Group III nitride product and method for producing the same
KR101335937B1 (en) * 2012-06-04 2013-12-04 주식회사 루미스탈 Method for fabricating gan wafer using llo(laser lift-off) process
KR20140020028A (en) * 2012-08-07 2014-02-18 엘지이노텍 주식회사 Uv light emitting device and light emitting device package
KR20150112335A (en) * 2014-03-27 2015-10-07 주식회사 루미스탈 Method for fabricating gallium nitride and method for manufacturing substrate of gallium nitride with using the same
KR20150133908A (en) * 2014-05-20 2015-12-01 주식회사 루미스탈 METHOD FOR MANUFACTURING GaN WAFER

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