KR20170012803A - Low voltage low power complementary metal-oxide semiconductor operational transconductance amplifier and active inductor using the operational transconductance amplifire - Google Patents
Low voltage low power complementary metal-oxide semiconductor operational transconductance amplifier and active inductor using the operational transconductance amplifire Download PDFInfo
- Publication number
- KR20170012803A KR20170012803A KR1020150105003A KR20150105003A KR20170012803A KR 20170012803 A KR20170012803 A KR 20170012803A KR 1020150105003 A KR1020150105003 A KR 1020150105003A KR 20150105003 A KR20150105003 A KR 20150105003A KR 20170012803 A KR20170012803 A KR 20170012803A
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- South Korea
- Prior art keywords
- operational transconductance
- transconductance amplifier
- active inductor
- low
- low voltage
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45183—Long tailed pairs
- H03F3/45192—Folded cascode stages
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45273—Mirror types
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/46—One-port networks
- H03H11/48—One-port networks simulating reactances
Abstract
Voltage low-power CMOS operational transconductance amplifier which can be applied to various circuits such as an active inductor and a V / F converter, and which contributes to a circuit operating at a low voltage and a low power, A current mirror constituting a bias current source is replaced with a current mirror of a cascode type in an internal circuit of the OTA, and a current mirror is formed by replacing the current mirror constituting the bias current source with a current mirror of a cascode type in a low voltage low power linear operational transconductance amplifier (OTA) Voltage low-power CMOS operational transconductance amplifier and an active inductor using the same, wherein leakage current is reduced by increasing the output resistance of the current mirror itself.
Description
The present invention relates to an amplifier operating at a low voltage and low power, and more particularly, to an amplifier that receives a voltage as an input and outputs a current to an output, and is applicable to various circuits such as an active inductor and a V / F converter. Voltage low-power CMOS operational transconductance amplifier and an active inductor using the same.
Recent electronic products have improved performance and reduced size due to the continued development of the electronics industry. Due to the desire of consumers, electronic products tend to be smaller and performance is evolving. In order to miniaturize electronic products, it is necessary to reduce the size of devices used in electronic products.
Active inductors and various converters among electronic devices are mostly composed of Operational Amplifier (OP Amp).
In recent years, internal circuits have been changed from BJTs (Bipolar Junction Transistors) to MOSFETs (Metal Oxide Silicon Field Effect Transistors), resulting in smaller devices and improved performance. However, electronic devices are pursuing further miniaturization and higher performance, A device with better performance is needed.
A circuit corresponding to a device used in an electronic product has become an essential requirement for a low-voltage low-power operation. In order to satisfy such a performance, an existing passive device must be replaced with an active device. For example, an active inductor (Inductor) can be replaced with an active inductor by using a linear transconductor capable of operating with low voltage and low power.
A passive inductor L in the form of a coil has a wide range of applications such as a filter, a sinusoidal oscillator and a resonant circuit as basic elements constituting a network together with a resistor R and a capacitor C have.
Therefore, there is a need for a miniaturization and high performance inductor having a wide range of applications.
Accordingly, the present inventors have developed a low voltage low power linear operational transconductance amplifier (OTA) that is implemented in CMOS and developed an active transistor To provide an inductor.
It is therefore an object of the present invention to provide a low voltage, low power CMOS operational transconductance amplifier operating at a low voltage of 3.3 V or less, which is composed of CMOS.
It is also an object of the present invention to provide an active inductor using a low voltage, low power CMOS operational transconductance amplifier.
It is still another object of the present invention to provide a low voltage low power CMOS operational transconductance amplifier capable of varying the gain (Gm) and the internal circuit resistance (Rs) value to control the output.
To this end, the present invention provides a low voltage, low power CMOS operational transconductance amplifier designed using a 0.18 micron MOSFET from TSMC (Taiwan Semiconductor Manufacturing Company).
According to an aspect of the present invention, there is provided a low-voltage low-power CMOS operational transconductance amplifier including a low-voltage low-power linear operational transconductance amplifier (OTA), the current mirror including a bias current source in an internal circuit of the OTA, Is replaced with a current mirror of the cascode type to increase the output resistance of the current mirror itself, thereby reducing the leakage current.
According to another aspect of the present invention, there is provided an active inductor using a low-voltage low-power CMOS operational transconductance amplifier according to the present invention, wherein the active inductor is grounded using two OTAs and one capacitor, do.
At this time, the two OTAs may be two differential in-out transconductors.
In order to achieve the above-mentioned object, an active inductor using a low-voltage low-power CMOS operational transconductance amplifier according to the present invention includes a floating active inductor using four OTAs and one capacitor, Active inductor using low voltage, low power CMOS operational transconductance amplifier.
At this time, the four OTAs may constitute a transconductor of a fully-differential structure.
INDUSTRIAL APPLICABILITY As described above, the present invention can provide low-voltage and miniaturized electronic parts in accordance with the miniaturization and high performance of the electronic product market, thereby contributing to miniaturization and high performance of electronic products.
1 is a circuit diagram of a low voltage, low power CMOS OTA according to the present invention,
2 is a view illustrating a grounded inductor to which an OTA according to the present invention is applied,
3 is a view of a floating inductor to which an OTA according to the present invention is applied.
Hereinafter, embodiments of a low voltage low power CMOS operational transconductance amplifier according to the present invention will be described in detail with reference to the drawings. It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed. , ≪ / RTI > equivalents, and alternatives. In the following description of the present invention, detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.
The terms first, second, etc. may be used to describe various components, but the components are not limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component.
The singular expressions include plural expressions unless the context clearly dictates otherwise. In the present application, the terms "comprises" or "having" and the like are used to specify that there is a feature, a number, a step, an operation, an element, a component or a combination thereof described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.
Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with the meaning in the context of the relevant art and are to be interpreted in an ideal or overly formal sense unless explicitly defined in the present application Do not.
The present invention relates to a low voltage low power CMOS operational transconductance amplifier (OTA) and an active inductor, and is characterized in that a linear operational transconductance amplifier is designed and used to implement an active inductor.
1 is a circuit diagram of a low voltage low power CMOS OTA according to the present invention, wherein V DD and V SS in FIG. 1 are respectively 1.65 V and -1.65 V as a supply voltage. I OUT represents the output current of the OTA.
The present invention designs a layout using a MOSFET using a 0.18μ process of Taiwan Semiconductor Manufacturing Company (TSMC) driven by low voltage and low power. The layout was designed using the Cadence tool. The present invention consists of a CMOS and a resistor R, and the input stage of the OTA is replaced with PMOS in consideration of the body effect.
The OTA device according to the present invention operates at a low voltage of 3.3 V or less. The output formula of OTA is I O = G m * Vin. Where G m is the transconductance, that is, the gain of OTA.
The internal circuit of the low-voltage low-power linear OTA constituting the active inductor shown in Figs. 2 and 3 to be described later replaces the current mirror constituting the bias current source with the current mirror of the cascode type as shown in Fig. 1, And the leakage current is reduced by raising the output resistance of itself.
FIG. 2 is a view illustrating a grounded inductor to which an OTA according to the present invention is applied, and FIG. 3 is a view illustrating a floating inductor to which an OTA according to the present invention is applied.
g m C There are two ways to achieve an active inductor. That is, a method using two differential-in single-ended transconductors and one capacitor as shown in FIG. 2 and a method using four differential-input single- Output transconductor and one capacitor.
An active inductor composed of g m C is not good in temperature characteristics because the transconductance of the transconductor is not only determined by circuit parameters such as bias voltage or current but also influenced by temperature sensitive transistors, Since a transconductor is used as an active element, it has an advantage that a circuit configuration is simple and a high frequency characteristic is good.
The present invention proposes an active floating inductor configuration using two low-voltage low-power CMOS linear transconductors with two differential in-out or fully-differential structures and one capacitor, The configuration is realized by using a CMOS linear transconductor having excellent high frequency characteristics and temperature characteristics. The inductor configuration method is the same as the conventional method, but differentiates it from the internal circuit of the OTA.
The y parameter of the active inductor of the present invention can be obtained by the following equations (1) to (5).
G m1 and g m2 in Fig. 2 are the transconductances of the first linear transconductor and the second linear transconductor, respectively. And the inductance
FIG m1 g of 3, g m2, g m3, g m4 are each a linear transconductance of the first transconductor, the second linear transconductor and the third transconductor and the fourth linear linear transconductor.
While the present invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not limited to the disclosed embodiments, but is capable of various modifications within the scope of the invention. Therefore, the scope of the present invention should not be limited by the described embodiments, but should be determined by the scope of the appended claims and equivalents thereof.
Claims (3)
Wherein a current mirror constituting a bias current source is replaced with a cascode type current mirror in an internal circuit of the OTA to increase an output resistance of the current mirror itself to thereby reduce a leakage current. Conductance amplifier.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150105003A KR20170012803A (en) | 2015-07-24 | 2015-07-24 | Low voltage low power complementary metal-oxide semiconductor operational transconductance amplifier and active inductor using the operational transconductance amplifire |
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| KR1020150105003A KR20170012803A (en) | 2015-07-24 | 2015-07-24 | Low voltage low power complementary metal-oxide semiconductor operational transconductance amplifier and active inductor using the operational transconductance amplifire |
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| KR20170012803A true KR20170012803A (en) | 2017-02-03 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108964620A (en) * | 2018-07-05 | 2018-12-07 | 湖南师范大学 | A kind of New Active inductance based on collapsible Cascode structure |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5635683A (en) | 1995-01-04 | 1997-06-03 | Calcomp Technology, Inc. | Dynamic pressure adjustment of a pressure-sensitive pointing device for a digitizer |
-
2015
- 2015-07-24 KR KR1020150105003A patent/KR20170012803A/en unknown
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5635683A (en) | 1995-01-04 | 1997-06-03 | Calcomp Technology, Inc. | Dynamic pressure adjustment of a pressure-sensitive pointing device for a digitizer |
Non-Patent Citations (2)
| Title |
|---|
| WALTON, Herrmann. 초고주파 양자 이론. 런던: Sweet와 Maxwell, 1973, Vol.2, ISBN 5-1234-5678-9, 138-192쪽 |
| 고성능 컴퓨터 아키텍처에 대한 제3차 국제심포지움 [on-line], 1997.2. |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108964620A (en) * | 2018-07-05 | 2018-12-07 | 湖南师范大学 | A kind of New Active inductance based on collapsible Cascode structure |
| CN108964620B (en) * | 2018-07-05 | 2022-01-28 | 湖南师范大学 | Active inductor based on folding Cascode structure |
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