KR20170001452A - High speed texturing method and system - Google Patents

High speed texturing method and system Download PDF

Info

Publication number
KR20170001452A
KR20170001452A KR1020150091448A KR20150091448A KR20170001452A KR 20170001452 A KR20170001452 A KR 20170001452A KR 1020150091448 A KR1020150091448 A KR 1020150091448A KR 20150091448 A KR20150091448 A KR 20150091448A KR 20170001452 A KR20170001452 A KR 20170001452A
Authority
KR
South Korea
Prior art keywords
wafer
surface
laser
high
porous chuck
Prior art date
Application number
KR1020150091448A
Other languages
Korean (ko)
Inventor
이천재
박훈
박재웅
Original Assignee
주식회사 코윈디에스티
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 코윈디에스티 filed Critical 주식회사 코윈디에스티
Priority to KR1020150091448A priority Critical patent/KR20170001452A/en
Publication of KR20170001452A publication Critical patent/KR20170001452A/en

Links

Images

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0236Special surface textures
    • H01L31/02366Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/86Investigating moving sheets
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0236Special surface textures
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product
    • Y02P70/52Manufacturing of products or systems for producing renewable energy
    • Y02P70/521Photovoltaic generators

Abstract

The present invention relates to a high speed texturing system. The present invention provides: a substrate adsorption porous chuck having a wafer arranged thereon; a transfer unit which transfers the substrate adsorption porous chuck; a wafer test device which scans a surface of the wafer on the transferred substrate adsorption porous chuck; a high speed surface manufacturing device which manufactures the scanned wafer surface with laser and supplies fuzzy gas to remove manufactured material; and a wafer cleaning device which cleans the manufactured wafer.

Description

[0001] HIGH SPEED TEXTURING METHOD AND SYSTEM [0002]

Embodiments of the present invention are directed to high speed texturing methods and systems.

Texturing refers to the entire surface structuring process in which the silicon wafer surface is treated to have a concave-convex structure.

On the other hand, a crystalline silicon wafer used in a solar cell manufacturing process includes a sawdamaged layer immediately after wire-sawing. A healing process is performed to remove the crystal damage layer. A pre-crystallization damage layer healing process is performed.

After the healing process, the wafer is subjected to a surface structuring step for increasing the power generation efficiency, and an etching process using a chemical solution is generally used.

The wet etching process generally used for surface structuring uses a mixed solution of HF and HNO 3, which is an isotropic etching solution having a uniform etching rate regardless of crystal orientation, in a polycrystalline silicon wafer.

This kind of processing method A wet etching process can be performed using 20-55% of water, 10-40% of concentrated hydrofluoric acid (concentration: 50%), concentrated nitric acid (concentration: 65%) as an etching solution.

However, the conventional hydrofluoric acid (HF) used for texturing of wafers can be killed by chemicals which are very harmful to the human body. However, there is a disadvantage that the texturing efficiency is low.

Since the crystal damage layer removing process of polycrystalline silicon wafers is an essential process which can greatly affect the energy conversion efficiency of the solar cell, improvement of a process method capable of performing the process more effectively is required.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a method and apparatus for texturing a wafer using a harmful chemical substance such as hydrofluoric acid, It facilitates removal of water and supply of machining source, thereby improving machining quality and expanding application.

The present invention is capable of various surface treatment processes and can perform etching-based texturing, patterning, cutting and the like, and can form thin films of SiO 2, Cr, W, Mo, .

The present invention aims at improving the manufacturing cost by improving the quality control and the production efficiency by reducing the use of the chemical liquid and inspecting the wafer during processing.

A high-speed texturing system according to an embodiment of the present invention for solving the above-mentioned problems comprises a substrate adsorption porous chuck on which a wafer is placed; A transfer unit for transferring the substrate-adsorbing porous chuck; A wafer inspection device for scanning the surface of the wafer on the transported substrate adsorption porous chuck; A high-speed surface machining device that processes the surface of the scanned wafer with a laser and supplies purge gas to remove processing by-products; And a wafer cleaner for cleaning the processed wafer.

According to another embodiment of the present invention, the apparatus may further include a chemical liquid processing unit including a chemical liquid for removing machining residues and damaged portions of the wafer, and immersing the substrate-adsorbing porous chuck on which the wafer is disposed.

According to another embodiment of the present invention, the wafer inspection apparatus can scan and inspect a defect state occurring during the entire process or transfer of the surface of the wafer.

According to another embodiment of the present invention, the conveying unit may be configured as a conveyor.

According to another embodiment of the present invention, the high-speed surface finishing apparatus includes a high-speed scanner into which a laser is introduced; A multi-array window for irradiating the introduced laser with a plurality of focused lasers; And an atmospheric pressure chamber in which the multi-array window is disposed, and a gas supply unit for supplying purge gas to the wafer.

According to another embodiment of the present invention, the high-speed surface finishing apparatus may further include an outside air blocking portion that forms a blocking wall by spraying a high-pressure air, a mixed gas, or an inert gas to a peripheral portion of the processing member.

According to another embodiment of the present invention, the high-speed scanner includes a polygon mirror in which the laser is reflected; And a lens unit for focusing the reflected laser beam.

According to another embodiment of the present invention, the multi-array window includes an upper window; A bottom window; And a multi-array formed between the upper window and the lower window and each including a plurality of lenses.

According to another embodiment of the present invention, the atmospheric pressure chamber includes an upper plate; An intermediate plate formed on one surface of the upper plate to form a channel through which the purge gas moves; And a lower plate formed on one surface of the intermediate plate, on which a supply port through which the purge gas is supplied is formed.

According to another embodiment of the present invention, the wafer cleaning apparatus includes a cleaning liquid injector for injecting a cleaning liquid to remove the processing residue of the processed wafer and laser damage; A purified water injector for spraying DI water to wash the cleaning liquid; And a drying device for drying the purified water.

A method of high-speed texturing according to the present invention includes: placing a wafer on a substrate-adsorbing porous chuck; The transporting unit transporting the substrate adsorption porous chuck; Scanning a surface of the wafer on a substrate-adsorbing porous chuck to which the wafer inspection apparatus is transported; Processing the surface of the scanned wafer with a laser, and supplying a purge gas to remove processing by-products; And cleaning the processed wafer with a wafer cleaning apparatus.

According to the present invention, it is possible to remove the machining residue of the wafer and to facilitate the supply of the machining source, thereby improving the machining quality and expanding the application, and enabling continuous processing of the wafer through the high-speed scanner and the conveyor.

The present invention is capable of various surface treatment processes and can perform etching-based texturing, patterning, cutting and the like, and can form thin films of SiO 2, Cr, W, Mo, Do.

INDUSTRIAL APPLICABILITY The present invention can reduce the use of a chemical solution, improve quality control and production efficiency through inspection of wafers during processing, and improve manufacturing cost.

1 is a diagram illustrating a high-speed texturing system according to an embodiment of the present invention.
2 is a view for explaining a method of healing a wafer according to an embodiment of the present invention.
3 is a view for explaining high-speed processing of a high-speed texturing system according to an embodiment of the present invention.
4 is a view showing a wafer processed by a high-speed texturing system according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description, well-known functions or constructions are not described in detail to avoid unnecessarily obscuring the subject matter of the present invention. In addition, the size of each component in the drawings may be exaggerated for the sake of explanation and does not mean a size actually applied.

FIG. 1 is a diagram illustrating a high-speed texturing system according to an embodiment of the present invention, and FIG. 2 is a view for explaining a method of healing a wafer according to an embodiment of the present invention.

1 and 2, a high-speed texturing system according to an embodiment of the present invention will be described.

1, a high speed texturing system according to an embodiment of the present invention includes a substrate adsorption porous chuck 140, a transfer unit 300, a wafer inspection apparatus 200, a high speed surface processing apparatus 100, Device 400 shown in FIG.

The wafer 105 is placed on the substrate-adsorbing porous chuck 140.

The substrate adsorption porous chuck 140 is transported by the transport unit 300, and the transport unit 300 may include a conveyor.

The wafer inspecting apparatus 200 scans the surface of the wafer 105 on the transferred substrate adsorption porous chuck 140 transferred by the transferring unit 300 as described above and the wafer inspecting apparatus 200 irradiates the light 201 ) To photograph the surface of the wafer 105 and inspect the surface of the wafer 105 for defects.

In addition, there is a buffer station (not shown) which fixes the inspection result and the defective wafer generated during the process so as not to interfere with the process flow.

According to an embodiment of the present invention, healing may be performed before the wafer 105 is inspected.

2, the substrate adsorption porous chuck 140 on which the wafer 105 is placed is immersed on the chemical liquid 171 in the chemical liquid processing unit 170. Then, as shown in FIG. For example, at the time of healing, the wafer 105 may be deep-dipped in the KOH chemical liquid, and the cleaning liquid may be sprayed through the cleaning liquid injector 103 to be cleaned.

The high speed surface machining apparatus 100 can process the surface of the scanned wafer 105 with a laser 101 and supply purge gas to the surface of the wafer 105 to remove processing byproducts.

More specifically, a laser 101 is introduced into the high-speed scanner 110 for processing the wafer 105, and the high-speed scanner 110 controls the laser to transmit the laser to the multi-array window 120.

The high-speed scanner 110 may include a polygon mirror 111 and a lens unit 115. In another embodiment, the high-speed scanner 110 may include an objective lens.

The polygon mirror 110 reflects the laser 101 and the lens unit 115 focuses the reflected laser 101. 1, the lens unit 115 is composed of a concave lens 116 and a convex lens 117, and the laser 101 is irradiated onto the wafer 105 through the multi-array window 120 So that it can be focused.

The multi-array window 120 irradiates the introduced laser with a plurality of focused lasers.

More specifically, the multi-array window 120 may comprise an upper window, a lower window, and a multi-array. A multi-array is formed between the upper window and the lower window, and each of the multi-arrays includes a plurality of lenses so that the introduced laser can be irradiated with a plurality of focused lasers.

In the meantime, according to the present invention, the laser has a pulse width shorter than picoseconds to minimize the processing damage of the wafer and form a nano-scale pyramid.

The atmospheric pressure chamber 130 is disposed with the multi-array window 120 configured as described above.

The atmospheric pressure chamber 130 includes a gas supply unit 136 for supplying purge gas to the wafer 105.

In addition, the atmospheric pressure chamber 130 may include an upper plate, an intermediate plate, and a lower plate.

More specifically, the intermediate plate may be formed on one surface of the upper plate, and a flow path 134 through which the purge gas moves may be formed. The lower plate may be formed on one surface of the intermediate plate, A supply port may be formed to supply the purge gas to the wafer 105. With this configuration, the size of the atmospheric pressure chamber 130 can be minimized while efficiently supplying the purge gas.

The substrate adsorption porous chuck 140 is disposed with a wafer 105 so that a plurality of focused lasers flowing through the multi-array window 130 are irradiated onto the wafer 105.

During the laser machining of the wafer 105, the purge gas is supplied through the gas supply part 136 of the atmospheric pressure chamber 130 to remove particles generated during laser machining.

In addition, according to the present invention, the barrier wall 160 can be formed by injecting high-pressure air, mixed gas, or inert gas to the peripheral portion of the wafer 105 through the outside air blocking portion.

Therefore, in the conventional texturing processing of wafers, human harmful chemicals such as hydrofluoric acid are used. However, there is a disadvantage that the texturing efficiency is low. However, according to the present invention, it is possible to remove the machining residue of the wafer 105, It is possible to improve the processing quality and expand the application.

The wafer cleaning apparatus 400 cleans the processed wafer 105 in the high-speed surface finishing apparatus 100.

More specifically, the wafer cleaning apparatus 400 may be configured to include a cleaning liquid injecting apparatus 401, a purified water injecting apparatus 402, and a drying apparatus 403.

The cleaning liquid injector 401 injects a cleaning liquid to remove processing residue and laser damage of the processed wafer 105. The purified water injector 402 injects DI water to clean the cleaning liquid, The drying device 403 dries the purified water remaining on the wafer 105.

At this time, the time (t1) of spraying the cleaning liquid and the spraying time (t2) of the purified water can be controlled by the moving distance on the conveying unit, the amount of the spraying liquid, and the concentration of the cleaning liquid in the spraying liquid.

FIG. 3 is a view for explaining high-speed processing of a high-speed texturing system according to an embodiment of the present invention, and FIG. 4 is a view illustrating a wafer processed by a high-speed texturing system according to an embodiment of the present invention.

In the conventional wafer processing, there is a drawback that the speed is slowed to 2 m / s when biaxial processing of x and y is performed.

However, according to the embodiment of the present invention, when a 2 MHz laser is used, the wafer having a size of 156 X 156 is processed at a speed of 20 m / s for processing within 4 seconds per sheet using the polygon mirror 110 This is possible.

In addition, according to one embodiment of the present invention, when four laser head modules are used, processing can be performed within 1 second per sheet.

As shown in Fig. 4, the pre-processing wafer has a portion damaged on the surface of the wafer, as in the pre-processing wafer photograph 410, so that the healing process is performed as in the healed wafer photograph 420.

Thereafter, the wafer is processed as in the wafer photograph 430 after laser processing. At this time, according to the present invention, the pulse width of the laser can be shortened to a picosecond or less so that the processing damage of the wafer can be minimized and a nano-scale pyramid can be formed.

Thereafter, as in the cleaned wafer photograph 440, the remnant can be removed through cleaning.

In the foregoing detailed description of the present invention, specific examples have been described. However, various modifications are possible within the scope of the present invention. The technical spirit of the present invention should not be limited to the above-described embodiments of the present invention, but should be determined by the claims and equivalents thereof.

100: Surface machining device
101: Laser
105: wafer
110: High-speed scanner
111: polygon mirror
115:
116: concave lens
117: convex lens
120: Multi-array window
130: atmospheric chamber
134: Euro
140: Substrate adsorption porous chuck
171: Solution
200: Wafer inspection device
201: Lighting
300:
400: Wafer cleaner
401: Cleaning liquid injector
402: Purified water injection device
403: Drying device

Claims (11)

  1. A substrate adsorption porous chuck on which a wafer is placed;
    A transfer unit for transferring the substrate-adsorbing porous chuck;
    A wafer inspection device for scanning the surface of the wafer on the transported substrate adsorption porous chuck;
    A high-speed surface machining device that processes the surface of the scanned wafer with a laser and supplies purge gas to remove processing by-products;
    A wafer cleaner for cleaning the processed wafer;
    Lt; / RTI >
  2. The method according to claim 1,
    A chemical liquid processing section including a chemical liquid for removing machining residues and damaged portions of the wafer, the chemical liquid processing section being immersed in the substrate adsorption porous chuck on which the wafer is disposed;
    Further comprising:
  3. The method according to claim 1,
    The wafer inspection apparatus comprises:
    Wherein a defect state occurring during the entire process or transfer of the surface of the wafer is scanned and inspected.
  4. The method according to claim 1,
    The transfer unit
    A high speed texturing system that is a conveyor.
  5. The method according to claim 1,
    The high-speed surface machining apparatus includes:
    A high-speed scanner into which a laser is introduced;
    A multi-array window for irradiating the introduced laser with a plurality of focused lasers; And
    An atmospheric pressure chamber in which the multi-array window is disposed, and a gas supply unit for supplying purge gas to the wafer;
    Lt; / RTI >
  6. The method of claim 5,
    The high-speed surface machining apparatus includes:
    An outside air blocking portion for forming a blocking wall by spraying high pressure air, a mixed gas, or an inert gas to the peripheral portion of the processing member;
    Further comprising:
  7. The method of claim 5,
    The high-speed surface machining apparatus includes:
    The high-
    A polygon mirror on which the laser beam is reflected; And
    A lens unit focusing the reflected laser;
    Lt; / RTI >
  8. The method of claim 5,
    The multi-
    An upper window;
    A bottom window; And
    A multi-array formed between the upper window and the lower window and each including a plurality of lenses;
    Lt; / RTI >
  9. The method of claim 5,
    The atmospheric-
    An upper plate;
    An intermediate plate formed on one surface of the upper plate to form a channel through which the purge gas moves; And
    A lower plate formed on one surface of the intermediate plate and having a supply port through which the purge gas is supplied;
    Lt; / RTI >
  10. The method according to claim 1,
    The wafer cleaning apparatus includes:
    A cleaning liquid injector for injecting a cleaning liquid to remove processing residues of the processed wafer and laser damage;
    A purified water injector for spraying DI water to wash the cleaning liquid; And
    A drying device for drying the purified water;
    Lt; / RTI >
  11. Disposing a wafer on a substrate-adsorbing porous chuck;
    The transporting unit transporting the substrate adsorption porous chuck;
    Scanning a surface of the wafer on a substrate-adsorbing porous chuck to which the wafer inspection apparatus is transported;
    Processing the surface of the scanned wafer with a laser, and supplying a purge gas to remove processing by-products; And
    The wafer cleaning apparatus cleaning the processed wafer;
    / RTI >
KR1020150091448A 2015-06-26 2015-06-26 High speed texturing method and system KR20170001452A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020150091448A KR20170001452A (en) 2015-06-26 2015-06-26 High speed texturing method and system

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020150091448A KR20170001452A (en) 2015-06-26 2015-06-26 High speed texturing method and system
PCT/KR2015/006629 WO2016208792A1 (en) 2015-06-26 2015-06-29 High-speed texturing method and system

Publications (1)

Publication Number Publication Date
KR20170001452A true KR20170001452A (en) 2017-01-04

Family

ID=57585873

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150091448A KR20170001452A (en) 2015-06-26 2015-06-26 High speed texturing method and system

Country Status (2)

Country Link
KR (1) KR20170001452A (en)
WO (1) WO2016208792A1 (en)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050211680A1 (en) * 2003-05-23 2005-09-29 Mingwei Li Systems and methods for laser texturing of surfaces of a substrate
CN105583526B (en) * 2008-03-21 2018-08-17 Imra美国公司 Material processing method based on laser and system
JP2009272402A (en) * 2008-05-02 2009-11-19 Dainippon Screen Mfg Co Ltd Substrate treatment method and substrate-treating device
US20120017989A1 (en) * 2010-08-24 2012-01-26 Pai-Chun Chang Metal and metal oxide surface texturing
WO2014158346A1 (en) * 2013-03-13 2014-10-02 Applied Materials, Inc. Laser ablation platform for solar cells

Also Published As

Publication number Publication date
WO2016208792A1 (en) 2016-12-29

Similar Documents

Publication Publication Date Title
TWI494983B (en) Wafer dicing using hybrid multi-step laser scribing process with plasma etch
KR101958016B1 (en) Hybrid laser and plasma etch wafer dicing using substrate carrier
CN104022080B (en) The processing method of chip
KR100321890B1 (en) Laser processing method
JP2014523110A (en) In-situ deposition mask layer for device singulation by laser scribing and plasma etching
KR101488030B1 (en) Supporting plate peeling apparatus
JP3751972B2 (en) Joining method, device produced by this method, surface activation device, and joining device provided with this device
JP4843212B2 (en) Laser processing apparatus and laser processing method
KR101802527B1 (en) Method for cutting object to be processed
JP5019370B2 (en) Substrate cleaning method and cleaning apparatus
KR20140037930A (en) Laser and plasma etch wafer dicing using water-soluble die attach film
KR100385255B1 (en) Method of cleaning porous body, and process for producing porous body, non-porous film or bonded substrate
US4980300A (en) Gettering method for a semiconductor wafer
US6900135B2 (en) Buffer station for wafer backside cleaning and inspection
DE69722633T2 (en) Removal of material through radiation of radiation
US6734388B2 (en) Dry surface cleaning apparatus
US9269604B2 (en) Wafer edge warp suppression for thin wafer supported by tape frame
JP2011515872A (en) Surface cleaning and uneven formation process of crystalline solar cell
US20060249480A1 (en) Laser machining using an active assist gas
US20150102467A1 (en) Method of diced wafer transportation
JPWO2003077295A1 (en) Substrate dividing method
KR20090037784A (en) A method cutting for workpiece
US7556712B2 (en) Laser cleaning of backside of wafer for photolithographic processing
JP2011512645A (en) Method and device for processing silicon wafers
KR100741541B1 (en) Method for producing bonded wafer and bonded wafer