KR20160069360A - Chemical mechanical polishing system capable of diverse polishing processes - Google Patents

Chemical mechanical polishing system capable of diverse polishing processes Download PDF

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Publication number
KR20160069360A
KR20160069360A KR1020140175225A KR20140175225A KR20160069360A KR 20160069360 A KR20160069360 A KR 20160069360A KR 1020140175225 A KR1020140175225 A KR 1020140175225A KR 20140175225 A KR20140175225 A KR 20140175225A KR 20160069360 A KR20160069360 A KR 20160069360A
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South Korea
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wafer
guide rail
polishing
chemical mechanical
cleaning
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KR1020140175225A
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Korean (ko)
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안준호
손병철
조문기
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주식회사 케이씨텍
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Priority to KR1020140175225A priority Critical patent/KR20160069360A/en
Publication of KR20160069360A publication Critical patent/KR20160069360A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The present invention relates to a chemical mechanical polishing system. The chemical mechanical polishing system comprises: a polishing unit to perform a chemical mechanical polishing process; a pre-washing unit to wash a polishing surface of a wafer in which the chemical mechanical polishing process is performed in the polishing unit when the polished surface of the wafer faces a lower side; and an unloading unit including a reverser to rotate the polishing surface reversed by rotating the wafer at 180 degrees to be an upper side. The purpose of the present invention is to provide the chemical mechanical polishing system which does not hinder the processing efficiency of the wafer by washing the wafer before the wafer passes through a main washing process before a process to reverse the wafer, in which the chemical mechanical polishing process is completed, at 180 degrees. The chemical mechanical polishing system can solve a problem of slipping and dropping the polluted wafer in the polluted wafer holding process of the reverser. The chemical mechanical polishing system can improve the processing efficiency of the wafer by reducing a frequency which is necessary to wash the reverser by remarkably postponing the pollution speed of the reverser to hold the polluted wafer.

Description

TECHNICAL FIELD [0001] The present invention relates to a chemical mechanical polishing

The present invention relates to a chemical mechanical polishing system, and more particularly, to a chemical mechanical polishing system that includes a chemical mechanical polishing system for cleaning a wafer after a chemical mechanical polishing process has been completed, To a chemical mechanical polishing system for preventing contamination.

As semiconductor devices are fabricated with high density integration of fine circuit lines, corresponding precision polishing is performed on the wafer surface. In order to perform polishing of the wafer more precisely, a chemical mechanical polishing process (CMP process) in which not only mechanical polishing but also chemical polishing is performed is performed.

In recent years, a multi-step chemical mechanical polishing process is performed on one wafer to control the thickness of the polishing layer. In order to carry out a multistage chemical mechanical polishing process, a chemical mechanical polishing system in which a wafer is moved through a plurality of polishing platens has been proposed. For example, Korean Patent Laid-Open Publication No. 2011-13384 and Korean Patent Laid- 0.0 > 2011-65464. ≪ / RTI >

Since the wafer subjected to the chemical mechanical polishing process is in a state of being contaminated with the slurry and the abrasive particles during the polishing process, the cleaning process is performed in the cleaning unit with the polishing surface turned upside down by 180 degrees in the unloading unit.

However, since the reverser for reversing the wafer 180 degrees in the unloading unit repeatedly grips the contaminated wafer, there is a possibility that the wafer will be missed by the contaminated particles or the like, and the contaminated wafer is periodically cleaned The process has to be stopped to reduce the process efficiency.

SUMMARY OF THE INVENTION The present invention was conceived in view of the technical background described above, and it is an object of the present invention to prevent the contamination of the unloading unit which rotates the wafer by 180 degrees by preliminarily cleaning the wafer after the chemical mechanical polishing process is carried out to the cleaning unit And to provide a chemical mechanical polishing system that is capable of producing a high-quality polishing solution.

Thus, the present invention can reduce the likelihood of grasping the wafer in the reversal of the unloading unit and, at the same time, delaying the contamination rate of the retention of the contaminated wafer, It is possible to reduce the time required to stop the process, thereby improving the process efficiency.

Incidentally, the present invention is intended to enable a multistage chemical mechanical polishing process in various ways depending on the type of wafers in a single batch structure occupying a predetermined space, so that it is possible to carry out various polishing processes in one batch structure .

In order to achieve the above object, the present invention provides a polishing apparatus comprising: a polishing unit for performing a chemical mechanical polishing process; A preliminary cleaning unit for performing preliminary cleaning in a state in which the polishing surface of the wafer subjected to the chemical mechanical polishing process in the polishing unit is directed downward; Wherein the polishing surface of the wafer is cleaned in the preliminary cleaning section before the wafer is transferred from the unloading unit to the cleaning unit.

This is achieved by preliminarily cleaning the wafer before it undergoes the main cleaning process prior to the 180-degree reversal of the wafer, which must be preceded prior to transfer of the chemically-mechanically polished wafer to the cleaning unit, In order to prevent contamination.

This allows the contaminated wafer to be preliminarily cleaned for a short period of time during the chemical mechanical polishing process even before the wafer is transferred to the cleaning unit, It is possible to solve the problem of skidding and missing in the process and significantly reduce the rate of contamination of the contaminated wafer so as to reduce the frequency required for the electrolytic cleaning and thereby to obtain an advantageous effect of improving the processing efficiency of the wafer .

That is, before the wafer is transferred to the cleaning unit in the unloading unit, there is provided a reversing unit between the unloading unit or the spare cleaning unit and the unloading unit, which rotates the wafer by 180 degrees and turns the polishing surface upward do.

At this time, the preliminary cleaning section can clean the wafer by spraying a high-pressure cleaning liquid onto the polishing surface of the wafer, with the polishing surface of the wafer facing downward. As described above, by performing high-pressure spraying of the cleaning liquid toward the polishing surface of the wafer, the preliminary cleaning process in the preliminary cleaning section can roughly remove large foreign matter and liquid from the polishing surface of the wafer in a short time.

The preliminary cleaning section may clean the cleaning surface of the wafer by spraying a cleaning liquid excited by the megasonic unit to the polishing surface of the wafer while the polishing surface of the wafer faces downward. As described above, the megasonic energy of high frequency is transmitted to the spraying cleaning liquid to vibrate the cleaning liquid to make an acoustic stream of the powerful fluid, and the cleaning liquid of the sound wave flow collides with the substrate to remove contaminant particles on the substrate. There is an advantage that it is possible to reliably remove even a small amount of polluted particles within a time period.

On the other hand, in the preliminary cleaning section, in a state in which the polishing surface of the wafer is immersed in the cleaning liquid of the first cleaning tank while the polishing surface of the wafer faces downward, the cleaning liquid is introduced into the cleaning liquid excited by the megasonic unit The polishing surface of the wafer may be cleaned. This is because the polishing surface of the wafer is cleaned by the flow of the cleaning liquid excited by the megasonic unit in the state that the wafer is immersed in the cleaning liquid so that the liquid foreign matter remaining on the surface of the wafer can be reliably diluted and removed, There is an advantage that it is possible to carry out preliminary cleaning which is quiet and clean.

At this time, the megasonic unit is disposed outside the first cleaning tank, and the liquid between the megasonic unit and the first cleaning tank can be filled with the megasonic unit. As a result, the contaminated solution is collected only in the first cleaning tank while cleaning the polished surface of the wafer, so that the polished surface of the wafer can be cleaned while preventing contamination of the megasonic unit.

In the case where the polishing surface of the wafer is cleaned using the megasonic unit, the frequency at which the cleaning liquid is applied may be two or more. As a result, two or more forces acting on the wafers at the corners of the wafer are applied to the wafers according to various excitation frequencies, thereby enhancing the removal efficiency of the wafers.

On the other hand, according to the present invention, the polishing unit may be completed by a single-stage chemical mechanical polishing process or may be completed by a multi-stage chemical mechanical polishing process. The polishing unit may perform a multistage chemical mechanical polishing process while moving the wafer one by one by the handler, or may perform a multistage chemical mechanical polishing process while the wafer carrier moves while holding the wafer.

When a multi-step chemical mechanical polishing process is performed while the wafer carrier moves while holding the wafer, the polishing unit includes: the wafer carrier moving in a state holding the wafer; A first guide rail on which the wafer held by the wafer carrier is arranged in a path passing through the first polishing table and on which the wafer carrier can move; A second guide rail on which the wafer held by the wafer carrier is arranged in a path passing through the third polishing table and on which the wafer carrier can move; A third guide rail arranged between the first guide rail and the second guide rail and capable of moving the wafer carrier; A first connecting rail connecting a first position spaced apart from one end of the first guide rail and a second position spaced apart from one end of the second guide rail; A second connection rail connecting a third position spaced apart from the other end of the first guide rail and a fourth position spaced apart from the other end of the second guide rail; Wherein the wafer carrier is capable of receiving the wafer carrier located in either the first guide rail, the third guide rail, or the second guide rail, and is capable of reciprocating along the first connection rail while accommodating the wafer carrier A carrier holder installed on the first guide rail and reciprocating along the first connection rail to move to a position where the wafer carrier accommodating the wafer carrier can be moved to either the first guide rail or the third guide rail or the second guide rail; ; The wafer carrier being capable of receiving the wafer carrier positioned in either the first guide rail, the third guide rail, or the second guide rail, and being reciprocally movable along the second connection rail in a state receiving the wafer carrier Wherein the wafer carrier is reciprocally moved along the second connection rail and moves to a position where the wafer carrier can be moved to either the first guide rail or the third guide rail or the second guide rail, Holder < RTI ID = 0.0 >

In this manner, the wafer carrier is moved along the path of the first guide rail, the second guide rail and the connection rail, and the third guide rail is formed at the center, and a carrier holder capable of accommodating the wafer carrier is provided It is possible to perform the various polishing processes for the wafers while being installed in a single arrangement structure as the two polishing plates can be moved so as to cross each other or sequentially move the four polishing plates through the third guide rails, The rail and the connection rail are not connected to each other and the wafer carrier is accommodated in the carrier holder and moves in the path along the connection rail by the movement of the carrier holder so that even if the movement path between the guide rail and the connection rail is angled The wafer carrier can be moved smoothly in a narrower space, It can be obtained which can form a travel path to advantage.

Accordingly, the present invention allows a variety of polishing processes for a wafer to be carried out using a chemical mechanical polishing system installed in a single batch structure, so that a multi-stage chemical mechanical polishing process can be variously performed depending on the type and thickness of the polishing layer deposited on the wafer Accordingly, it is possible to achieve various steps of polishing in various stages depending on the state and kind of the wafer while minimizing the space occupied by the semiconductor manufacturing line.

The terms "retention", "mounting", and "mounting" in this specification and claims are defined as referring to a form in which a wafer moves with a wafer carrier. Thus, a wafer that is "held", "mounted", or "mounted" on a wafer carrier is not limited to any particular shape or location, such as being located within the wafer carrier.

As described above, the present invention is characterized in that the wafer is preliminarily cleaned before the wafer is subjected to the main cleaning process, prior to the 180-degree reversing process of the wafer, which must precede the transfer of the wafer after completion of the chemical mechanical polishing process to the cleaning unit It is possible to solve the problem of slipping and missing the contaminated wafer in the process of holding the contaminated wafer without deteriorating the processing efficiency of the wafer by preventing or delaying the contamination of the wafer by 180 degrees, It is possible to obtain a favorable effect of improving the processing efficiency of the wafer by reducing the frequency required for the electrolytic cleaning.

In addition, the present invention minimizes the increase in the process time due to the addition of the preliminary cleaning process by spraying a cleaning liquid of a high pressure on the polishing surface of the wafer in a state where the polishing surface of the wafer faces downward in the preliminary cleaning section, It is possible to obtain an effect of largely removing large foreign substances and liquids on the polishing surface of the wafer.

In addition, the present invention is characterized in that, by jetting a cleaning liquid from a megasonic unit with megasonic energy of two or more high frequencies, or by forming a flow of megasonic energy in a cleaning liquid in a state where the polishing surface of the wafer is immersed in the cleaning liquid, There is an advantage that it is possible to reliably remove even a small amount of polluted particles within a time period.

According to the present invention, since the megasonic unit is disposed outside the first cleaning tank in which the wafer polishing surface is locked, the polishing surface of the wafer is cleaned with the cleaning liquid, so that the contaminated solution cleaning the wafer polishing surface can be cleaned only in the first cleaning tank It is possible to clean the polishing surface of the wafer while preventing the contamination of the megasonic unit, and the maintenance of the preliminary cleaning section can be facilitated and the contamination of the preliminary cleaning section can be reliably prevented for a long time.

Further, the present invention is characterized in that the wafer carrier is moved along a path composed of the first guide rail, the second guide rail and the connection rail, and a third guide rail is formed at the center, and a carrier Two holders are movably arranged so that the four polishing platens can be mutually intersected or sequentially moved through the third guide rails, so that the chemical mechanical polishing system installed in one arrangement structure can be used to carry out Various polishing processes can be carried out. Thus, it is possible to obtain a multi-stage chemical mechanical polishing process in various ways depending on the type and thickness of the polishing layer deposited on the wafer.

1 is a plan view showing a chemical mechanical polishing system according to an embodiment of the present invention and a layout structure for performing a cleaning process,
FIG. 2 is a plan view showing the arrangement structure of the chemical mechanical polishing system of FIG. 1,
3 is a diagram illustrating the operating principle of a wafer carrier moving along a guide rail to a connecting rail,
Figure 4 is a perspective view of the wafer carrier of Figure 3,
Fig. 5 is a longitudinal sectional view of Fig. 4,
FIG. 6 is a perspective view showing a state where the docking unit is docked to the wafer carrier of FIG. 3;
Figures 7A and 7B show the inverting device in the unloading unit,
8A to 8C are schematic views illustrating a configuration according to an embodiment applicable to the pre-cleaning unit of FIG. 1;
9 is a graph showing the zeta potential according to the pH of the cleaning liquid used in the preliminary washing part.

Hereinafter, a chemical mechanical polishing system 1 according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. In the following description, well-known functions or constructions are designated by the same or similar reference numerals and the description thereof will be omitted for the sake of clarity of the present invention.

1 and 2, a chemical mechanical polishing system 1 according to an embodiment of the present invention includes a loading unit 20 for loading a wafer W to be subjected to a chemical mechanical polishing process, (P, C) on which a chemical mechanical polishing process for the wafer is performed; and a preliminary cleaning section for preliminarily cleaning the polished surface of the wafer subjected to the chemical mechanical polishing process in the polishing units (P, C) (30); And an unloading unit (10) having a turner (50) for rotating the wafer (W) by 180 degrees and turning the polished surface upward.

The loading unit 20 serves to mount a new wafer to be subjected to a chemical mechanical polishing process by a handler (not shown). When a new wafer W is mounted on the loading unit 20, the polishing units P and C perform a predetermined chemical mechanical polishing process with respect to the wafer W loaded on the loading unit 20.

The polishing units P and C perform a predetermined chemical mechanical polishing process when the wafer W is supplied to the loading unit. For example, a chemical mechanical polishing process may be carried out while the wafer carrier C of the polishing units P and C is moving with the wafer W mounted thereon. Although not shown in the drawing, The chemical mechanical polishing process may be performed while moving the polishing pad to one or more polishing plates. Hereinafter, the polishing units P and C will be described by way of example with reference to a configuration in which the wafer carrier C moves while performing a chemical mechanical polishing process.

The polishing units P and C are arranged so as to pass through the wafer carrier C moving in a state holding the wafers W and the first polishing table P1 and the second polishing table P2 A first guide rail G1 provided so as to allow the wafer carrier C to move and a second guide rail G1 arranged to pass through the third polishing table P3 and the fourth polishing table P4, A third guide rail G3 arranged between the first guide rail G1 and the second guide rail G2 to move the wafer carrier C and a second guide rail G2 arranged between the first guide rail G1 and the second guide rail G2, A first connecting rail CR1 connecting a first position S4 spaced apart from one end of the first guide rail G1 and a second position S4 'spaced apart from one end of the second guide rail G2, A second connecting rail CR2 connecting a third position S1 spaced apart from the other end of the second guide rail G1 and a fourth position S1 'spaced apart from the other end of the second guide rail G2, CR1, < / RTI > And a third carrier holder H3 capable of receiving the wafer carrier C while moving along the second connection rail CR2. The first carrier holder H1 and the second carrier holder H2 can receive the wafer carrier C, And a fourth carrier holder H4.

The wafer carrier C moves independently in the guide rails G1, G2 and G3 and the carrier rails CR1 and CR2 in the state of being accommodated in the carrier holders H1, H2, H3 and H4 As the carrier holder H moves. The rectangular shape formed by a plurality of vertical lines in the layout diagrams of Figs. 1 and 2 is a simplified representation of the wafer carrier C. Fig.

As shown in Figs. 4 and 5, the wafer carrier C has N pole permanent magnets 128n and S pole permanent magnets 128s alternately arranged on the upper side, and a drive motor or a pneumatic supply device In a non-powered state. 3, the current direction of the power source 88 applied to the coil 90 provided on the frame F formed on the upper side of the polishing platens P1, P2, P3 and P4 is controlled Thereby moving along the guide rail G on the principle of the linear motor.

When the wafer carrier C is positioned on the upper side of the polishing platen P, the docking unit D is engaged with the wafer carrier C and the rotational driving force for rotating the wafer W and the rotational driving force for rotating the wafer W A pneumatic pressure for pushing downward is supplied.

4 and 5, a magnetic coupler 124 in which permanent magnets of N and S poles are alternately arranged is formed on an inner circumferential surface of the docking unit D to receive a rotational driving force, The driving shaft 186 of the docking unit D approaches the magnetic coupler 124 of the wafer carrier C by alternately arranging N poles and S poles alternately along the circumferential direction on the outer circumferential surface of the drive shaft 186 When it is rotated in the inserted state, the rotational driving force is transmitted to the magnetic coupler 124 to be rotationally driven 124r. The rotational driving force of the rotational shaft 125 is transmitted to the rotational drive 126r by the power transmitting means such as a gear or the like, And is transferred to the polishing head CH to rotationally drive the wafer W during the chemical mechanical polishing process. At this time, the guide shaft 124o may be formed at the center of the magnetic coupler 124 so as to guide the drive shaft 186 of the docking unit D to be inserted into the magnetic coupler 124.

A pneumatic supply port 123x is formed on the outer surface of the outer circumferential surface of the wafer carrier C so that when the docking unit D is docked close to the wafer carrier C and docked, D through the pneumatic feed pipes 123 and 129 extending from the pneumatic feed port 123x while the engaging portion 187 of the pneumatic pipe 187a of the pneumatic pipe 187a is inserted into the pneumatic feed port 123x, ). At this time, since the polishing head CH is driven to rotate 126r during the chemical mechanical polishing process, a rotary union RU is provided on the pneumatic supply paths 123 and 129 to apply pneumatic pressure to the polishing head CH So that it can be supplied smoothly.

Then, the wafer carrier C is not rotated during the movement path along the guide rail G and the connection rail CR. In this case, the distance between the third guide rail G3 and the first guide rail G1 and the distance between the third guide rail G1 and the first guide rail G2 may be set to be docked on only one predetermined side of the wafer carrier C. However, G3 and the second guide rail G2 must be increased more than necessary, thereby lowering the overall space efficiency.

1, the docking unit D is disposed outside (on the upper side in FIG. 1) with respect to the first guide rail G1, and the docking unit D is disposed on the second guide rail G2 with respect to the first guide rail G1. (D) are also arranged on the outer side (lower side with reference to Fig. 1), and are configured to move in opposite directions to each other and to dock, which is effective to increase the overall space efficiency. At this time, the wafer carrier C moves along the path without rotating, so that the wafer carrier C can be engaged with the docking unit D approaching from the upper side and the lower side (reference in FIG. 1) As shown in the drawing, a pneumatic coupling part 123 and a magnetic coupler 124 are formed on two opposite sides. This provides the advantage of avoiding the complex controls and structures that require rotating the wafer carrier C while keeping the arrangement of the chemical mechanical polishing system more compact.

An upper roller 127U and a lower roller 127L are rotatably formed on both side surfaces of the wafer carrier C so as to move on the guide rail G without swinging. The wafer carrier C continues to rotate while moving along the guide rail C and the connecting rail CR.

In the drawing, reference numeral 121 denotes a connection portion to the polishing head CH of the wafer carrier C.

On the other hand, the docking unit D is fixed to the frame F as shown in Fig. 6 so that a horizontal reciprocating motion 8 is possible so that it can engage with the wafer carrier C moving along the guide rail G Respectively. To this end, when the rotary shaft 182 is driven to rotate by the moving motor 181, the moving plate 184 reciprocates 8 on the principle of the lead screw on the rotary shaft 182.

A driving shaft 186 is fixed to the moving plate 184 by a rotation drive motor 185 and is driven to rotate by a rotation driving motor 185. The moving plate 184 is moved by the moving motor 181 The drive shaft 186 is inserted into the magnetic coupler 124 of the wafer carrier C to be able to transmit the rotational driving force to the wafer carrier C. [ At the same time, the engagement portion 187 of the pneumatic supply pipe 187a is coupled with the pneumatic supply portion 123x of the wafer carrier C in accordance with the movement of the movable plate 184, so that the pneumatic pressure can also be supplied.

The first guide rail G1 is disposed so that the wafer W held by the wafer carrier C can be subjected to a chemical mechanical polishing process in the first polishing table P1 and the second polishing table P2 respectively . Likewise, the second guide rail G2 is provided so that the wafer W held by the wafer carrier C can be subjected to the chemical mechanical polishing process in the third polishing table P3 and the fourth polishing table P4, respectively .

A polishing platen is not disposed on the third guide rail G3, and a path through which the wafer carrier C moves is formed. In order to move from the ends S1 and S4 of the connecting rail CR to the other ends S1 'and S4', the carrier holder H can be moved at one time because two carrier holders H are disposed on the connecting rail CR. The wafer carrier C can serve as a temporary storage unit TS for exchanging the carrier holder H at any position where the third guide rail G3 is arranged.

3, the carrier holder H is formed with a holder rail HR for accommodating the wafer carrier C, and moves along the guide rail G regardless of the arrangement of the connection rails CR The wafer carrier C can be received. For this purpose, a coil 209 is also formed on the upper side of the carrier holder H to perform an operation of moving the wafer carrier C to the carrier holder H by interaction with the permanent magnet 128 arranged on the upper side of the wafer carrier C .

Two carrier holders H are arranged for each connection rail CR. A first carrier holder H1 and a second carrier holder H2 may be provided for the first connection rail CR1 and may move along the first connection rail CR1. A third carrier holder H3 and a fourth carrier holder H4 are provided for the second connection rail CR2 and can move along the second connection rail CR2.

The first carrier holder H1 can receive the wafer carrier C positioned in any one of the first guide rail G1 and the third guide rail G3, The wafer carrier C reciprocating along the first connection rail CR1 and reciprocating along the first connection rail CR1 is supported by the first guide rail G1 and the third guide rail G3 Move to a position where one can move.

Similarly, the second carrier holder H2 can receive the wafer carrier C located in either the third guide rail G3 or the second guide rail G2, and can receive the wafer carrier C The wafer carrier C reciprocatingly moved along the first connection rail CR1 is reciprocally movable along the first connection rail CR1 in a state where the third guide rail G3 and the second guide rail CR1 are reciprocated. (G2). ≪ / RTI >

The third carrier holder H3 can accommodate the wafer carrier C positioned in any one of the first guide rail G1 and the third guide rail G3 and can hold the wafer carrier C The wafer carrier C reciprocatingly moved along the second connection rail CR2 is reciprocated along the second connection rail CR2 to the first guide rail G1 and the third guide rail G3 ) Move to a position where you can move to either one.

Similarly, the fourth carrier holder H4 may receive the wafer carrier C located in any one of the third guide rail G3 and the second guide rail G2, and may receive the wafer carrier C The wafer carrier C reciprocatingly moved along the second connection rail CR2 is reciprocable along the second connection rail CR2 in a state that the wafer carrier C accommodates the third guide rail G3 and the second guide rail CR2, (G2). ≪ / RTI >

Thus, the wafer carrier C can freely move while the guide rail G and the connection rail CR can freely move. Even if the path of the wafer carrier C is formed by the guide rail G and the connection rail CR so that the guide rail G and the connection rail CR form a path forming a vertex, C can be smoothly moved, and a compact arrangement structure can be realized by forming a space indicated by X1 in a smaller size even if the same number and size of polishing plates are provided.

The wafer carrier C is moved along the second connection rail CR2 while being accommodated in the third carrier holder H3 and the fourth carrier holder H4 so that a new wafer W to be subjected to the chemical mechanical polishing process The wafer W supplied from the loading unit 20 and having undergone the chemical mechanical polishing process is preliminarily cleaned by the preliminary cleaning section 30 and the preliminarily cleaned wafer W is preliminarily cleaned by the unloading unit 10 (C1, C2, C1 ', C2') while being inverted by 180 degrees with the cleaning unit (50).

As shown in the drawing, the loading unit 20, the preliminary cleaning unit 30 and the unloading unit 10 are respectively disposed in the moving regions of the third carrier holder H3 and the fourth carrier holder H4.

The polishing units P and C configured as described above can perform the two-step chemical mechanical polishing process for the two different wafers W1 and W2 at the same time and can perform the chemical mechanical polishing process for the wafers W1 along the ' Four chemical mechanical polishing processes can be carried out while passing through four polishing plates (P1-P2-P3-P4), and the two S-shaped paths for the two wafers W1 and W2, which are different from each other, The chemical mechanical polishing process in four steps may be performed while passing through the four polishing plates P1-P2-P4-P3 and P4-P3-P1-P2 different from the second embodiment. The wafer W1 is subjected to a chemical mechanical polishing process in three stages while passing through three polishing plates P1-P2-P3. At the same time, in one polishing plate P4, By performing the polishing process, various chemical mechanical polishing processes can be realized in one system.

8A, the cleaning nozzle 35 for spraying the cleaning liquid 33 with a high water pressure is provided on the polishing surface of the wafer W mounted on the wafer carrier C And the cleaning liquid 33 is sprayed to the entire polishing surface of the wafer W at a high pressure while the cleaning nozzle 35 moves (35d), whereby a large foreign substance such as slurry or abrasive particles (99) in a short time.

This makes it possible to minimize slippage of time during the process of transferring the wafer W to the cleaning units C1 and C1 'after the chemical mechanical polishing process of the wafers W and to prevent the slurry and slurry particles and abrasive particles, The wafer W can be supplied to the inverter 50 of the unloading unit 10 while the wafer W is being cleaned so that the contaminated wafer can be supplied to the arm portion 52 during the process of holding the arm portion 52 of the inverter 50 And the edge of the wafer W are slippery, the wafer is damaged or the process is delayed.

Further, since the reactor 50 of the unloading unit 10 grasps the pre-cleaned wafer W, the contamination speed of the arm portion 52 of the reactor 50 is significantly retarded, 40 can be greatly increased compared with the conventional case, and the effect of reducing the stopping time of the wafer processing process during the cleaning time of the inverter 40 can be obtained.

8B, the cleaning solution injection nozzle 38 is formed to have a length corresponding to the diameter of the wafer, and the cleaning solution injection nozzle 37 The cleaning liquid 38M injected from the jetting nozzle 37 is ejected by the megasonic unit 38 while the cleaning liquid 38M is rotated 38r from the ejection nozzle 37 toward the polishing surface sw of the wafer W, To the wafer polishing surface (sw). This allows the cleaning liquid 38M to reach the entire surface of the wafer W within a very short time (the time the cleaning liquid ejection nozzles 38 make one turn) and shorten the preliminary cleaning time, The impurities 99 stuck on the polishing surface of the wafer W can be more effectively separated by the excited cleaning liquid by striking the wafer polishing surface sw in a state where the cleaning liquid to be sprayed is struck.

At this time, it is preferable that the gap 38g of the discharge port 38a of the spray nozzle 38 is about 0.5 mm to 3 mm.

According to another embodiment of the present invention, as shown in Fig. 8C, the preliminary cleaning section 30 "may be configured such that the polishing surface sw of the wafer W contacts the cleaning liquid of the first cleaning tank 301 The second container 302 is placed in a state in which it is immersed in the first cleaning tank 301 and the megasonic unit 303 is placed in the second container 302 located outside the first cleaning tank 301, 55 and the megasonic unit 303 is operated so that the excitation force 39 from the megasonic unit 303 is applied to the first cleaning tank 301 with the liquid 55 of the second container 302 as a medium. The cleaning liquid 66 in the first cleaning tank 301 is guided to the wafer polishing surface sw while generating the flow 77 or the vibration toward the wafer polishing surface sw. The foreign matter 99 on the surface is roughly removed.

In this way, the contaminated particles and liquids separated from the wafer polishing surface sw are all contained in the first cleaning tank 301, It is possible to consecutively continue the preliminary cleaning process of the wafer W by replacing the cleaning liquid of the first cleaning bath 301 while the contamination is intrinsically blocked. Further, since the cleaning liquid is not injected at a high pressure during the cleaning of the wafer polishing surface (sw), it is possible to obtain a secondary advantage of preventing a contaminant from splashing to the periphery, thereby enabling a quiet and clean preliminary cleaning process.

On the other hand, the megasonic unit 38, 303 used in the preliminary cleaning units 30 ', 30 "shown in FIGS. 8B and 8C may have a cleaning liquid at one frequency, but the cleaning liquid at two or more frequencies The foreign matter adhering to the surface of the wafer W with a relatively high strength can be separated by using the excitation energy of different excitation frequency, and a better cleaning effect can be obtained.

8A and 8B can be used to supply dissolved gas such as carbon dioxide (CO 2 ), nitrogen (N 2 ), hydrogen (H) and argon (Ar) (48), which is dissolved in the cleaning liquid to adjust the pH value. Here, the cleaning liquid may be deionized water or an alcohol such as isopropyl alcohol. The pH value adjusted by adding the dissolved gas to the cleaning liquid depends on the material of the polishing layer (Si 3 N 4 , tungsten, etc.) of the wafer and the kind of slurry (for example, silica, ceria and alumina) used in the chemical mechanical polishing process It is different.

That is, as shown in FIG. 9dp, since the detergency is excellent in a state where the zeta potential difference is high by the material of the object to be cleaned, the cleaning liquid is adjusted to a pH value suitable for the object to be cleaned, thereby maximizing the pre- . For example, when the wafer of the Si3N4 polishing layer is polished with a ceria slurry, the preliminary cleaning portions 30 and 30 'can adjust the zeta potential difference to the maximum by adjusting the pH value to 6. [

The pH value of the cleaning liquid is adjusted by mixing the amount of the dissolved gas corresponding to the pH control with the cleaning liquid. As shown in FIGS. 8A and 8B, the corresponding (49) of an appropriate amount of gas, and supplying and supplying the cleaning liquid to be used from the cleaning liquid supply unit (CL).

8A to 8C, the preliminary cleaning process is performed in a state where the wafer W is mounted on the wafer carrier CH. Thus, in the preliminary cleaning section 30, 30 ', 30 "shown in FIGS. It is possible to control the time required for the cleaning process to be short and to be transferred to the cleaning units C1 and C1 'immediately after the preliminary cleaning process. Therefore, even if the preliminary cleaning process is newly added, Can be minimized.

As described above, the wafer W having the polishing surface sw preliminarily cleaned in the preliminary cleaning portions 30, 30 ', 30 "is transferred to the unloading unit 10 by the carrier holders H3, H4. In the unloading unit 10, the wafer W mounted on the wafer carrier C is transferred to the arm 52 of the inverter 50. The inverter 50 is connected to the rotary shaft 51 of the arm 52, Is rotated 180 degrees so that the polishing surface (sw) of the wafer W is turned upside down by 180 degrees.

Then, the wafer W of the unloading unit 10 is transferred to the cleaning area X2 by the handler, and the main cleaning process is performed.

The chemical mechanical polishing system 1 according to the present invention constituted as described above is subjected to the preliminary cleaning process before the chemical mechanical polishing process is completed and the wafer W is inverted by 180 degrees. It is possible to solve the problem of slipping and missing in the process of grasping a slippery contaminated wafer by the arm 52 of the wafer 50. In addition, It is possible to minimize the frequency of periodic cleaning of the inverter 50 so as to minimize the time required for stopping the wafer during the processing process, thereby achieving an advantageous effect of improving the process efficiency .

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, Modified, modified, or improved.

1: chemical mechanical polishing system 10: loading unit
20: unloading unit 30: reserve tax administration
35: rinse solution nozzle 37: rinse solution nozzle
38: Megasonic unit 38M: Spray cleaning liquid
301: First cleaning tank 302: Second cleaning tank 303: Megasonic unit 77: Excited cleaning liquid flow
D: docking unit P: abrasive plate
C: Wafer carrier H: Carrier holder
W: Wafer

Claims (12)

A polishing unit for performing a chemical mechanical polishing process;
A preliminary cleaning unit for performing preliminary cleaning before the polishing surface of the wafer subjected to the chemical mechanical polishing process in the polishing unit is supplied to the unloading unit in a downward direction;
Wherein the polishing surface of the wafer is cleaned in the preliminary cleaning section before transferring the wafer from the unloading unit to the cleaning unit.
The method according to claim 1,
Further comprising a reverser for rotating the wafer by 180 degrees and turning the polishing surface upward, wherein the reverser reverses the wafer 180 through the pre-wash section.
The method according to claim 1,
Wherein the preliminary cleaning section is configured to clean the wafer by spraying a high-pressure cleaning liquid onto the polishing surface of the wafer while the polishing surface of the wafer faces downward,
The method according to claim 1,
Wherein the preliminary cleaning section ejects a cleaning liquid in a state excited by the megasonic unit to the polishing surface of the wafer in a state where the polishing surface of the wafer faces downward.
The system according to claim 1,
The polishing surface of the wafer is immersed in the cleaning liquid of the first cleaning tank in a state in which the polishing surface of the wafer faces downward and the cleaning liquid is excited by the megasonic unit and the polishing surface of the wafer is cleaned Wherein the chemical mechanical polishing system comprises a chemical mechanical polishing system.
6. The method of claim 5,
Wherein the frequency of excitation of the cleaning liquid is two or more.
6. The method of claim 5,
Wherein the megasonic unit is disposed outside the first cleaning bath, and a liquid is filled between the megasonic unit and the first cleaning bath.
8. The method according to any one of claims 1 to 7,
Wherein the cleaning liquid is adjusted in pH value according to the material of the polishing layer of the wafer and the kind of slurry particles used in the chemical mechanical polishing process.
9. The method of claim 8,
Wherein the cleaning liquid used in the pre-wash section contains a dissolved gas.
9. The method of claim 8,
Wherein the cleaning liquid comprises deionized water and an alcohol solution.
8. The method according to any one of claims 1 to 7,
Wherein the polishing unit is a chemical mechanical polishing process in which the wafer carrier is moved while holding the wafer, and the cleaning process in the preliminary cleaning portion is performed while the wafer is held in the wafer carrier. Polishing system.
The polishing apparatus according to claim 11,
The wafer carrier moving in a state holding the wafer;
A first guide rail on which the wafer held by the wafer carrier is arranged in a path passing through the first polishing table and on which the wafer carrier can move;
A second guide rail on which the wafer held by the wafer carrier is arranged in a path passing through the third polishing table and on which the wafer carrier can move;
A third guide rail arranged between the first guide rail and the second guide rail and capable of moving the wafer carrier;
A first connecting rail connecting a first position spaced apart from one end of the first guide rail and a second position spaced apart from one end of the second guide rail;
A second connection rail connecting a third position spaced apart from the other end of the first guide rail and a fourth position spaced apart from the other end of the second guide rail;
Wherein the wafer carrier is capable of receiving the wafer carrier located in either the first guide rail, the third guide rail, or the second guide rail, and is capable of reciprocating along the first connection rail while accommodating the wafer carrier A carrier holder installed on the first guide rail and reciprocating along the first connection rail to move to a position where the wafer carrier accommodating the wafer carrier can be moved to either the first guide rail or the third guide rail or the second guide rail; ;
The wafer carrier being capable of receiving the wafer carrier positioned in either the first guide rail, the third guide rail, or the second guide rail, and being reciprocally movable along the second connection rail in a state receiving the wafer carrier Wherein the wafer carrier is reciprocally moved along the second connection rail and moves to a position where the wafer carrier can be moved to either the first guide rail or the third guide rail or the second guide rail, Holder;
Wherein the chemical mechanical polishing system comprises a chemical mechanical polishing system.



KR1020140175225A 2014-12-08 2014-12-08 Chemical mechanical polishing system capable of diverse polishing processes KR20160069360A (en)

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