KR20160024090A - Deposition apparatus, method for forming thin film using the same and method for manufacturing organic light emitting display apparatus - Google Patents

Abstract

An embodiment of the present invention relates to a deposition apparatus for performing a deposition process of a substrate by using a mask. The deposition apparatus comprises: a chamber; a supporting unit supporting a substrate and including a first area and a second area, which is adjacent to and is thinner than the first area; and a deposition source spraying at least one deposition material toward the substrate. The purpose of the present invention is to provide a deposition apparatus to minimize a gap between the substrate and the mask.

Description

[0001] The present invention relates to a deposition apparatus, a thin film forming method using the same, and a manufacturing method of an organic light emitting display device,

Embodiments of the present invention relate to a deposition apparatus, a thin film forming method using the same, and a method of manufacturing an organic light emitting display device.

Semiconductor devices, display devices, and other electronic devices include a plurality of thin films. There are various methods of forming such a plurality of thin films, among which a vapor deposition method is one method.

The deposition method can use various materials to form a thin film, for example, one or more gases are used. Such deposition methods include chemical vapor deposition (CVD), atomic layer deposition (ALD), and various other methods.

On the other hand, among the display devices, the organic light emitting display device has a wide viewing angle, excellent contrast, and fast response speed, and is receiving attention as a next generation display device.

The organic light emitting diode display includes an intermediate layer having an organic light emitting layer between a first electrode and a second electrode facing each other, and includes at least one of various thin films. At this time, a deposition process may be used to form a thin film of the organic light emitting display device.

However, as the organic light emitting display device becomes larger and requires a higher resolution, it is difficult to deposit a thin film having a desired area with a desired characteristic. Further, there is a limit in improving the efficiency of the process of forming such a thin film.

The above-described background technology is technical information that the inventor holds for the derivation of the present invention or acquired in the process of deriving the present invention, and can not necessarily be a known technology disclosed to the general public prior to the filing of the present invention.

Embodiments of the present invention provide a deposition apparatus, a thin film forming method using the same, and a method of manufacturing an organic light emitting display device.

One embodiment of the present invention is directed to a deposition apparatus for performing a deposition process using a mask with respect to a substrate, the deposition apparatus comprising: a chamber; a chamber for supporting the substrate, the chamber being adjacent to the first region and the first region, Disclosed is a deposition apparatus including a support having a second region with a thin thickness and an evaporation source that emits one or more evaporation materials in the direction of the substrate.

In this embodiment, the surface of the first region facing the substrate may have a flat surface.

In this embodiment, the surface of the second region facing the substrate may have a flat surface.

In this embodiment, the surface of the second region facing the substrate may be formed to have a predetermined curvature in the substrate direction.

In this embodiment, an area at least a predetermined distance may be provided between a surface formed to have a predetermined curvature of the second area and the substrate.

In this embodiment, the substrate and the surface formed to have a predetermined curvature of the second region may be formed in close contact with each other.

In this embodiment, the surface of the first region facing the substrate may be formed to have a predetermined curvature in the substrate direction.

In this embodiment, an area at least a predetermined distance may be provided between a surface formed to have a predetermined curvature of the first area and the substrate.

In this embodiment, the substrate may be formed so that the substrate and the surface formed to have a predetermined curvature of the first region are in close contact with each other.

In this embodiment, the surface of the second region facing the substrate may have a flat surface.

In this embodiment, the surface of the second region facing the substrate may be formed to have a predetermined curvature in the substrate direction.

In this embodiment, an area at least a predetermined distance may be provided between a surface formed to have a predetermined curvature of the second area and the substrate.

In this embodiment, the substrate and the surface formed to have a predetermined curvature of the second region may be formed in close contact with each other.

In this embodiment, the substrate and the surface formed to have a predetermined curvature of the first region are formed in close contact with each other, and the first region and the second region may have the same curvature.

Another embodiment of the present invention is directed to a method of forming a thin film on a substrate using a deposition apparatus, the method comprising forming a first region and a second region adjacent to both sides of the first region and having a thickness thinner than the thickness of the first region, The method comprising: disposing a mask on a substrate; and radiating at least one deposition material for forming a thin film from the deposition source toward the substrate.

In this embodiment, the step of disposing the substrate on the supporting part may be arranged so as to be bent toward the supporting part about the area corresponding to the first area of the supporting part among the areas of the substrate.

In this embodiment, the step of disposing the mask relative to the substrate may be characterized in that the mask is arranged in a bent shape corresponding to the bending of the substrate.

Another embodiment of the present invention is directed to a method of manufacturing an organic light emitting display device including at least one thin film using a deposition apparatus, wherein the step of forming a thin film includes: The method comprising the steps of: placing a mask on a support having a second region having a thickness that is less than the thickness of the first region; disposing the mask relative to the substrate; and radiating at least one deposition material for forming a thin film from the deposition source toward the substrate A method of manufacturing an organic light emitting display device is disclosed.

In this embodiment, the step of disposing the substrate on the supporting part may be arranged so as to be bent toward the supporting part about the area corresponding to the first area of the supporting part among the areas of the substrate.

In this embodiment, the step of disposing the mask relative to the substrate may be characterized in that the mask is arranged in a bent shape corresponding to the bending of the substrate.

Other aspects, features, and advantages will become apparent from the following drawings, claims, and detailed description of the invention.

The deposition apparatus according to embodiments of the present invention, the thin film forming method using the same, and the method for manufacturing an organic light emitting display device can minimize the gap between the mask and the substrate.

1 is a conceptual diagram schematically showing a deposition apparatus according to an embodiment of the present invention.
Fig. 2 is a plan view showing the support portion of Fig. 1 in detail.
3A and 3B are cross-sectional views showing a modification of the support portion of FIG.
4A and 4B are cross-sectional views showing another modification of the support of Fig.
5A and 5B are cross-sectional views showing still another modification of the support portion of FIG.
6 is a cross-sectional view showing still another modification of the support portion of Fig.
7 is a conceptual diagram schematically showing a deposition apparatus according to another embodiment of the present invention.
FIG. 8 is a cross-sectional view schematically showing an organic light emitting display manufactured using a deposition apparatus according to embodiments of the present invention.
9 is an enlarged view of F in Fig.

BRIEF DESCRIPTION OF THE DRAWINGS The present invention is capable of various modifications and various embodiments, and specific embodiments are illustrated in the drawings and described in detail in the detailed description. The effects and features of the present invention and methods of achieving them will be apparent with reference to the embodiments described in detail below with reference to the drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In the following embodiments, the terms first, second, and the like are used for the purpose of distinguishing one element from another element, not the limitative meaning. Also, the singular expressions include plural expressions unless the context clearly dictates otherwise. Also, the terms include, including, etc. mean that there is a feature, or element, recited in the specification and does not preclude the possibility that one or more other features or components may be added.

Also, in the drawings, for convenience of explanation, the components may be exaggerated or reduced in size. For example, the size and thickness of each component shown in the drawings are arbitrarily shown for convenience of explanation, and thus the present invention is not necessarily limited to those shown in the drawings. Also, if an embodiment is otherwise feasible, the particular process sequence may be performed differently than the sequence described. For example, two processes that are described in succession may be performed substantially concurrently, and may be performed in the reverse order of the order described.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings, wherein like reference numerals refer to like or corresponding components throughout the drawings, and a duplicate description thereof will be omitted .

FIG. 1 is a conceptual diagram schematically showing a deposition apparatus 100 according to an embodiment of the present invention, and FIG. 2 is a plan view specifically showing the support portion of FIG.

Referring to FIG. 1, a deposition apparatus 100 includes a chamber 110, a support 120, and an evaporation source 130.

The chamber 110 may be connected to a pump (not shown) to control the pressure atmosphere of the deposition process and may receive and protect the substrate S, the support 120 and the evaporation source 130. In addition, the chamber 110 may have one or more outlets 110a for the entrance and exit of the substrate S or the mask M. [

A substrate S on which a deposition process is to be performed is disposed on the support 120. The support 120 prevents the substrate S from moving or shaking during the deposition process for the substrate S. The mask M is disposed on the substrate S supported by the support portion 120 in this manner. Although not shown, the mask M is formed with a plurality of openings (not shown) for depositing a deposition material on the substrate S by passing one or more deposition materials emitted from the deposition source 130, (M) may be an open mask. In some of these openings during the deposition process, a lift phenomenon that does not completely adhere to the substrate S occurs.

If the mask M and the substrate S are not in close contact with each other during the deposition process, the deposition material is deposited in an undesired region on the substrate S, that is, in a dead zone, . This phenomenon is called a shadow effect. In order to manufacture a high-resolution organic light emitting display, it is necessary to reduce or eliminate such a shadow phenomenon. Therefore, in order to reduce or eliminate the shadow phenomenon, it is necessary to improve the degree of adhesion between the substrate S and the mask M.

The support 120 includes a first region 121 and a second region 122 adjacent to the first region 121 and having a thickness that is less than the thickness of the first region 121. A surface of the first region 121 facing the substrate S may have a flat surface and a region spaced apart from the flat surface of the first region 121 by a predetermined distance may be formed .

The second region 122 having a thickness smaller than that of the first region 121 may be formed on the support region 120. [ Since the edge region of the substrate S supported by the first region 121 is sagged below the central region of the substrate supported by the first region 121, the floating region between the patterning slit region of the mask M and the substrate S It is possible to reduce or eliminate the space.

Referring to FIG. 2, the first region 121 is formed in an elliptical shape at the central portion of the support portion 120, and the second region 122 is formed to surround the first region 121. The shape of the first region 121 is not limited thereto, and the first region 121 may have various shapes such as a circular shape and a polygonal shape.

The evaporation source 130 is disposed to face the substrate S and emits one or more raw materials, that is, a deposition material toward the substrate S, so that the deposition process can be performed on the substrate S. That is, the evaporation source 130 is disposed on the upper portion of the support portion 120. As a specific example of the evaporation source 130, the evaporation source 130 may have a shape of a shower head for supplying one or more evaporation materials toward the substrate S.

In addition, a voltage may be applied between the deposition source 130 and the support 120 to change the deposition material in the gaseous state supplied from the deposition source 130 toward the substrate S into plasma. That is, the deposition apparatus 100 may be a plasma enhanced chemical vapor deposition (PECVD) apparatus.

As a specific example of the voltage applying method, a voltage may be applied to the support 120 and the evaporation source 130, respectively. However, the present invention is not limited to this, and another electrode (not shown) may be disposed in the deposition apparatus 100 to generate plasma between the support 120 and the evaporation source 130.

The size of the evaporation source 130 is not limited. That is, the evaporation source 130 may be formed to have a larger area than the substrate S, thereby forming a uniform deposition film on the entire substrate S.

Figs. 3A and 3B are cross-sectional views showing a modification of the support of Fig. 1, Figs. 4A and 4B are sectional views showing another modification of the support of Fig. 1, Figs. 5A and 5B are cross- FIG. 6 is a cross-sectional view showing still another modification of the support of FIG. 1. FIG.

3A and 3B, the supporting portions 120a and 120b include first regions 121a and 121b having a flat surface facing the substrate S and first and second regions 121a and 121b adjacent to the first regions 121a and 121b. And a second region 122a or 122b having an average thickness that is thinner than the thickness of the first region 121a or 12b and a surface of the second region 122a or 122b facing the substrate S, (S) direction.

At this time, the second regions 122a and 122b formed such that the surface facing the substrate S has a predetermined curvature in the direction of the substrate S is formed at least as a predetermined region between the substrate S and the second region 122a And the second region 122b and the substrate S may be formed so as to be completely in close contact with each other as shown in FIG. 3B.

4A and 4B, the support portions 120c and 120d include first regions 121c and 121d formed such that the surface facing the substrate S has a predetermined curvature in the substrate S direction, The second regions 122c and 122d adjacent to the first regions 121c and 121d and having an average thickness thinner than the thicknesses of the first regions 121c and 121d may be provided. The surfaces of the first areas 121c and 121d facing the substrate S, that is, the surfaces formed to have a predetermined curvature in the substrate S direction, The first region 121d and the substrate S may be in close contact with each other, as shown in FIG. 4B.

5A and 5B, the supporting portions 120e and 120f include a first region 121e and a second region 121f formed such that a surface thereof facing the substrate S has a predetermined curvature toward the substrate S, (122e, 122f) adjacent to the first regions (121e, 121f) and having an average thickness thinner than the thickness of the first regions (121e, 121f) S are formed so as to have a predetermined curvature in the direction of the substrate S. [

At this time, the second regions 122e and 122f formed such that the surface facing the substrate S has a predetermined curvature in the direction of the substrate S is formed at least as a predetermined region between the substrate S and the second region 122e as shown in FIG. And the second region 122f and the substrate S may be formed so as to be completely in close contact with each other as shown in FIG. 5B.

5B, when the second region 122f is formed to have a predetermined curvature in a direction toward the substrate S, the first region 121f is formed so that the entirety of the support portion 120f and the substrate S are in close contact with each other, And the second region 122f may have the same curvature.

Referring to FIG. 6, the first region 121g may be formed to be smaller than the width of the second region 122g. In this case, the space formed between the second region 122g and the substrate S is large as compared with other modifications. In this case, however, the substrate S is provided with sufficient curvature, Of course, can be improved.

More specifically, the degree of bending can be variously determined, but the distance between the extension of the region that protrudes most in the direction from the first region 121 toward the substrate S and the outermost border region of the second region 122 It is preferable to make it to be not more than 1 millimeter. In other words, if the curvature of the supporting part 120 is too large, the substrate S supported by the supporting part 120 may be excessively bent correspondingly, thereby causing the above-described shadow phenomenon. Particularly, when an inorganic thin film is formed on the substrate S, defects such as cracks of the thin film may occur. Therefore, it is preferable to control the bending of the first region 121 and the second region 122 as described above.

7 is a conceptual diagram schematically showing a deposition apparatus according to another embodiment of the present invention.

7, the deposition apparatus 200 includes a chamber 210, a support 220, an evaporation source 230, a base plate 240, a power source 250, and a cleaner 260 .

The chamber 210 may be connected to a pump (not shown) to control the pressure atmosphere of the deposition process and may receive and protect the substrate S, the support 220 and the evaporation source 230. The chamber 210 also has at least one entrance 210a for entry and exit of the substrate S or mask M. [

The substrate S on which the deposition process is to be performed is disposed on the support 220. The support 220 prevents the substrate S from moving or shaking during the deposition process for the substrate S. To this end, the support 220 may further include a clamp (not shown). The supporting part 220 may further include a suction hole (not shown) for adsorption between the supporting part 220 and the substrate S.

The mask M is provided with a plurality of openings (not shown) for depositing a deposition material on the substrate S by passing one or more deposition materials emitted from the deposition source 230, It may be a mask. During the deposition process, the mask M and the substrate S are preferably arranged as close as possible during the deposition process because some of these openings are not completely adhered to the substrate S.

The evaporation source 230 is disposed to face the substrate S and emits one or more raw materials, i.e., evaporation material, toward the substrate S so that the evaporation process can be performed on the substrate S. That is, the evaporation source 230 is disposed on the upper portion of the support portion 220. As a specific example of the evaporation source 230, the evaporation source 230 may have a shape of a shower head for supplying one or more evaporation materials toward the substrate S. In addition, the evaporation source 230 may have a diffuser shape so as to uniformly supply the evaporation material to the entire surface of the substrate S.

The size of the evaporation source 230 is not limited. That is, the evaporation source 230 may be formed to have a larger area than the substrate S, and uniform deposition films can be formed on the entire substrate S through the evaporation source 230.

The base plate 240 is disposed at an upper portion of the evaporation source 230. That is, the base plate 240 is disposed farther from the substrate S than the evaporation source 230 to support the evaporation source 230.

In addition, a voltage may be applied between the evaporation source 230 and the supporter 220 to change the evaporation material in the gaseous state supplied in the direction of the substrate S from the evaporation source 230 to the plasma state. As a specific example, a voltage may be applied to the evaporation source 230 and the supporter 220, respectively, and a voltage may be applied to the base plate 240. When a voltage is applied, a ground voltage may be applied to either side.

The deposition apparatus 200 includes a power supply unit 250 for providing a voltage to change the gaseous deposition material supplied in the direction of the substrate S from the deposition source 230 to a plasma state. The power supply unit 250 may provide various types of voltages, and may preferably apply a high frequency voltage (RF voltage).

However, the embodiments of the present invention are not limited thereto. A separate electrode (not shown) may be disposed in the deposition apparatus 200 to generate plasma between the deposition source 230 and the support 220.

The cleaning section 260 is arranged to be connected to the chamber 210. The cleaning section 260 cleans the chamber 210 when the chamber 210 is contaminated as the deposition process is performed. The cleaning section 260 can generate a remote plasma to clean the chamber 210 and supply it into the chamber 210. For example, the cleaning unit 260 may supply nitrogen trifluoride (NF3) gas to the chamber 210 to change its state into a plasma state and inject it into the chamber 210 to contact the layers formed on the inner wall of the chamber 210, It can be cleaned.

FIG. 8 is a cross-sectional view schematically showing an organic light emitting display manufactured using the deposition apparatus according to the embodiments of the present invention, and FIG. 9 is an enlarged view of FIG. 8F.

On the substrate 30, a flat surface is provided on the substrate 30, and a buffer layer 31 containing an insulating material is formed to prevent moisture and foreign matter from penetrating toward the substrate 30.

A thin film transistor (TFT) 40, a capacitor 50, and an organic light emitting device 60 are formed on the buffer layer 31. The thin film transistor 40 mainly includes an active layer 41, a gate electrode 42, and a source / drain electrode 43. The organic light emitting device 60 includes a first electrode 61, a second electrode 62, and an intermediate layer 63. The capacitor 50 includes a first capacitor electrode 51 and a second capacitor electrode 52.

Specifically, an active layer 41 formed in a predetermined pattern is disposed on the upper surface of the buffer layer 31. The active layer 41 may contain an inorganic semiconductor material such as silicon, an organic semiconductor material, or an oxide semiconductor material, and may optionally be formed by implanting a p-type or n-type dopant.

A gate insulating film 32 is formed on the active layer 41. A gate electrode 42 is formed on the gate insulating film 32 to correspond to the active layer 41. The first capacitor electrode 51 may be formed on the gate insulating film 32 and may be formed of the same material as the gate electrode 42.

An interlayer insulating film 33 is formed so as to cover the gate electrode 42 and a source / drain electrode 43 is formed on the interlayer insulating film 33 so as to be in contact with a predetermined region of the active layer 41. A second capacitor electrode 52 may be formed on the insulating film 33 and may be formed of the same material as the source / drain electrode 43.

A passivation layer 34 may be formed to cover the source / drain electrode 43 and a separate insulating layer may be formed on the passivation layer 34 for planarization of the thin film transistor 40. [

A first electrode (61) is formed on the passivation layer (34). The first electrode 61 is formed to be electrically connected to one of the source / drain electrodes 43. The pixel defining layer 35 is formed so as to cover the first electrode 61. After the predetermined opening 64 is formed in the pixel defining layer 35, the intermediate layer 63 having the organic light emitting layer is formed in the region defined by the opening 64. And the second electrode 62 on the intermediate layer 63.

Referring to FIG. 9, an encapsulating layer 70 is formed on the second electrode 62. The sealing layer 70 may contain an organic substance or an inorganic substance, and may be a structure in which organic substances and inorganic substances are alternately laminated.

As a specific example, the sealing layer 70 may be formed using the deposition apparatuses 100 and 200 described above. The desired layer can be formed using the deposition apparatuses 100 and 200 after the substrate 30 on which the second electrode 62 is formed is put into the chambers 101 and 201. [

In particular, the sealing layer 70 comprises an inorganic layer 71 and an organic layer 72, the inorganic layer 71 comprises a plurality of layers 71a, 71b and 71c, and the organic layer 72 comprises a plurality of layers (72a, 72b, 72c). At this time, the plurality of layers 71a, 71b and 71c of the inorganic layer 71 can be formed by using the deposition apparatuses 100 and 200. [

However, the present invention is not limited thereto. That is, other insulating films such as the buffer layer 31, the gate insulating film 32, the interlayer insulating film 33, the passivation layer 34, and the pixel defining film 35 of the organic light emitting display device 10 are formed in the deposition apparatus (100, 200).

A variety of other thin films such as the active layer 41, the gate electrode 42, the source / drain electrode 43, the first electrode 61, the intermediate layer 63 and the second electrode 62 may be formed on the deposition apparatus 100 , 200).

As described above, when the deposition apparatuses 100 and 200 of the present embodiment are used, the characteristics of the deposition film formed on the organic light emitting display device 10 are improved and the electrical characteristics and image quality characteristics of the organic light emitting display device 10 are improved .

In addition, the thin film provided in the liquid crystal display device or the thin film provided in various other display devices can be formed in addition to the organic light emitting display device 10 by using the deposition apparatuses 100 and 200 of the present embodiment. Of course, the present invention is not limited to this, and a thin film for various applications can be formed by using the deposition apparatuses 100 and 200. [

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the exemplary embodiments, and that various changes and modifications may be made therein without departing from the scope of the present invention. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

10: OLED display device 64: aperture
30: substrate 70: sealing layer
31: buffer layer 71, 71a, 71b, 71c: inorganic layer
32: gate insulating film 72, 72a, 72b, 72c: organic layer
33: interlayer insulating film 100, 200: deposition apparatus
34: passivation layer 110: chamber
35: pixel definition film 110a, 210a:
40: Thin film transistor 120: Support
41: active layer 121: first region
42: gate electrode 122: second region
43: source / drain electrode 130: evaporation source
50: capacitor 210: chamber
51: first capacitor electrode 220:
52: second capacitor electrode 230: evaporation source
60: organic light emitting device 240: base plate
61: first electrode 250:
62: second electrode 260:
63: middle layer

Claims (20)

The present invention relates to a deposition apparatus for carrying out a deposition process using a mask on a substrate,
chamber;
A support for supporting the substrate and having a first region and a second region adjacent the first region and having a thickness that is less than a thickness of the first region; And
And an evaporation source that emits one or more evaporation materials toward the substrate. The method according to claim 1,
And a surface of the first region facing the substrate has a flat surface. 3. The method of claim 2,
And a surface of the second region facing the substrate has a flat surface. 3. The method of claim 2,
And a surface of the second region facing the substrate is formed to have a predetermined curvature in the substrate direction. 5. The method of claim 4,
The second region being formed to have a predetermined curvature and at least a region spaced apart from the substrate by a predetermined distance. 5. The method of claim 4,
And the substrate is formed so as to be in close contact with a surface formed to have a predetermined curvature of the second region. The method according to claim 1,
And a surface of the first region facing the substrate is formed to have a predetermined curvature in the substrate direction. 8. The method of claim 7,
And a region formed at least a predetermined distance between a surface formed to have a predetermined curvature of the first region and the substrate. 8. The method of claim 7,
And the substrate is formed so as to be in close contact with a surface formed to have a predetermined curvature of the first region. 8. The method of claim 7,
And a surface of the second region facing the substrate has a flat surface. 8. The method of claim 7,
And a surface of the second region facing the substrate is formed to have a predetermined curvature in the substrate direction. 12. The method of claim 11,
The second region being formed to have a predetermined curvature and at least a region spaced apart from the substrate by a predetermined distance. 12. The method of claim 11,
And the substrate is formed so as to be in close contact with a surface formed to have a predetermined curvature of the second region. 14. The method of claim 13,
Wherein the first region and the second region are formed so that the substrate and the surface formed to have a predetermined curvature of the first region are in close contact with each other, and the first region and the second region have the same curvature. A method for forming a thin film on a substrate using a deposition apparatus,
Disposing the substrate on a support portion having a first region and a second region adjacent to both sides of the first region and having a thickness thinner than the thickness of the first region;
Disposing a mask on the substrate; And
And radiating at least one deposition material for forming a thin film from the evaporation source toward the substrate. 16. The method of claim 15,
The step of disposing the substrate on the support comprises:
Wherein the support portion is disposed so as to be bent toward the support portion about a region corresponding to the first region of the support portion among the regions of the substrate. 17. The method of claim 16,
Wherein disposing the mask relative to the substrate comprises:
Wherein the mask is arranged in a curved shape so as to correspond to the bending of the substrate. A method of manufacturing an organic light emitting display device including at least one thin film using a deposition apparatus,
Wherein the forming of the thin film comprises:
Disposing the substrate in a support portion having a first region and a second region adjacent to both sides of the first region and having a thickness thinner than the thickness of the first region;
Disposing a mask on the substrate; And
And radiating at least one evaporation material for forming the thin film from the evaporation source toward the substrate. 19. The method of claim 18,
The step of disposing the substrate on the support comprises:
Wherein the supporting portion is disposed so as to be bent toward the support portion with respect to a region of the substrate corresponding to the first region of the supporting portion. 20. The method of claim 19,
Wherein disposing the mask relative to the substrate comprises:
Wherein the mask is arranged in a curved shape so as to correspond to the curvature of the substrate.

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