KR20150030088A - organic light emitting diode display device - Google Patents

organic light emitting diode display device Download PDF

Info

Publication number
KR20150030088A
KR20150030088A KR20130109327A KR20130109327A KR20150030088A KR 20150030088 A KR20150030088 A KR 20150030088A KR 20130109327 A KR20130109327 A KR 20130109327A KR 20130109327 A KR20130109327 A KR 20130109327A KR 20150030088 A KR20150030088 A KR 20150030088A
Authority
KR
South Korea
Prior art keywords
electrode
formed
thin film
light emitting
film transistor
Prior art date
Application number
KR20130109327A
Other languages
Korean (ko)
Other versions
KR102028052B1 (en
Inventor
정대성
이지노
김지윤
강진후
Original Assignee
엘지디스플레이 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지디스플레이 주식회사 filed Critical 엘지디스플레이 주식회사
Priority to KR1020130109327A priority Critical patent/KR102028052B1/en
Publication of KR20150030088A publication Critical patent/KR20150030088A/en
Application granted granted Critical
Publication of KR102028052B1 publication Critical patent/KR102028052B1/en

Links

Images

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/28Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
    • H01L27/32Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
    • H01L27/3241Matrix-type displays
    • H01L27/3244Active matrix displays
    • H01L27/3258Insulating layers formed between TFT elements and OLED elements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/28Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
    • H01L27/32Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
    • H01L27/3241Matrix-type displays
    • H01L27/3244Active matrix displays
    • H01L27/326Active matrix displays special geometry or disposition of pixel-elements
    • H01L27/3265Active matrix displays special geometry or disposition of pixel-elements of capacitor
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/28Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
    • H01L27/32Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
    • H01L27/3241Matrix-type displays
    • H01L27/3244Active matrix displays
    • H01L27/3276Wiring lines
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00Energy efficient lighting technologies
    • Y02B20/30Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]
    • Y02B20/34Inorganic LEDs
    • Y02B20/341Specially adapted circuits
    • Y02B20/346Switching regulators

Abstract

The present invention provides a display device comprising: a first substrate divided into a display region in which an image is displayed and a non-display region surrounding the display region; A gate wiring, a data wiring, and a power wiring formed on the first substrate and defining a pixel region intersecting with each other; A switching thin film transistor connected to the gate wiring and the data wiring; a driving thin film transistor connected to the switching thin film transistor and the power wiring; A passivation layer formed on the switching thin film transistor and the driving thin film transistor, the passivation layer including a first concavo-convex pattern corresponding to the non-display area; An organic light emitting diode formed on the protective layer of the display region and including a first electrode, an organic light emitting layer, and a second electrode; And a base wire formed on the protective layer of the non-display area and having a second uneven pattern corresponding to the first uneven pattern and contacting the second electrode.

Description

[0001] The present invention relates to an organic light emitting diode display device,

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an organic light emitting diode display device, and more particularly to an organic light emitting diode display device with improved VSS voltage variation.

An organic light emitting diode display device, which is one of a flat panel display (FPD), has high luminance and low operating voltage characteristics. In addition, since it is a self-luminous type that emits light by itself, it is possible to realize a large contrast ratio, realize an ultra-thin display, have a response time of several microseconds (μs), easy to implement a moving image, And is driven at a low voltage of 5 to 15 V of direct current, so that it is easy to manufacture and design a driving circuit.

In addition, since the manufacturing process of the organic light emitting diode display device is all the deposition and encapsulation equipment, the manufacturing process is very simple.

The organic light emitting diode display device having such characteristics is largely divided into a passive matrix type and an active matrix type. In a passive matrix type, a scan line and a signal line cross each other to form a matrix type device. In order to drive the pixels, the scanning lines are sequentially driven with time, and therefore, in order to represent the required average luminance, the instantaneous luminance must be as much as the average luminance multiplied by the number of lines.

However, in the active matrix system, a thin film transistor, which is a switching element for turning on / off a pixel, is located per sub pixel, and a voltage applied to the pixel is applied to the storage capacitor storage capacitance, and power is applied until the next frame signal is applied, thereby continuously driving for one screen regardless of the number of scanning lines. Accordingly, since the same luminance is exhibited even when a low current is applied, an active matrix type organic light emitting diode (OLED) display device is mainly used because it has advantages of low power consumption, high definition, and large size.

Hereinafter, such an organic light emitting diode display device will be described with reference to the drawings.

FIG. 1 is a schematic view of a conventional organic light emitting diode display device, and FIG. 2 is a cross-sectional view taken along a cutting line II-II in FIG.

As shown in the figure, a conventional organic light emitting diode display device includes a display panel 10 for displaying an image, a gate driver 20 for generating and supplying signals for operating elements of the display panel 10, and a data driver 30).

The display panel 10 includes a gate line GL and a data line DL intersecting each other and defining a pixel region and a power line PL spaced apart from the data line DL for applying a power source voltage, And is electrically connected to an external power source (not shown), and a base wire 14 is formed on one side of the display area.

Switching and driving thin film transistors Ts and Td, a storage capacitor CS, and the like, which are connected to the power supply line PL, the gate line GL and the data line DL, The organic light emitting diode E is located.

The organic light emitting diode display device having such a structure is divided into a top emission type and a bottom emission type according to a transmission direction of light emitted through the organic light emitting diode E. [ In this case, the lower light emitting method has a problem that the aperture ratio is lowered, and therefore, the upper light emitting method is mainly used.

The display panel 10 of the organic light emitting diode display device of the top emission type includes a first substrate 50 and a second substrate 60 facing the first substrate 50, An interlayer insulating film 54 having a semiconductor layer (not shown), a gate insulating film 52, a gate electrode (not shown), a semiconductor layer contact hole (not shown), and source and drain electrodes sequentially stacked, Thereby forming thin film transistors Ts and Td.

At this time, the gate electrode of the switching thin film transistor Ts is connected to the gate line GL, the source electrode thereof is connected to the data line DL, and the drain electrode is connected to the gate of the storage capacitor CS and the gate electrode of the driving thin film transistor Td. Electrode.

The source electrode of the driving thin film transistor Td is connected to the power supply line PL, and the drain electrode is connected to the organic light emitting diode E.

The organic light emitting diode E includes a first electrode 50 connected to the drain electrode of the driving TFT Td for each pixel region, a second electrode 15 formed on the entire surface of the display region AA, And an organic light emitting layer (not shown) formed between the electrode and the second electrode 15.

At this time, the power supply voltage VDD is applied to the power supply line PL and the ground voltage VSS is applied to the second electrode 15 of the organic light emitting diode E.

More specifically, a part of the second electrode 15 is in contact with the base wiring 14, and a ground voltage VSS is applied to the second electrode 15 from an external power supply unit (not shown).

That is, referring to FIG. 2, the second electrode 15 is in contact with the base wiring 14 in the non-display area NAA.

For the top emission, the second electrode 15 formed on the top of the first substrate has a transmission characteristic with respect to visible light, and the first electrode (not shown) formed below the second electrode 15 has a light efficiency It is preferable to have a reflection characteristic with respect to visible light for improvement.

In the organic light emitting diode display device, when a signal is applied through the gate line GL, the switching thin film transistor Ts is turned on and the signal of the data line DL is applied to the driving thin film transistor Td. The driving thin film transistor Td is turned on so that light is output through the organic light emitting diode E. At this time, when the driving thin film transistor Td is turned on, the level of the electric current flowing from the power supply line PL to the organic light emitting diode E is determined. Accordingly, the organic light emitting diode E is gray- and the storage capacitor CS can maintain the gate voltage of the driving thin film transistor Td constant when the switching thin film transistor Ts is turned off so that the switching thin film transistor Ts The level of the current flowing through the organic light emitting diode E can be kept constant until the next frame.

The current flowing through the organic light emitting diode E is controlled by the potential difference Vgs between the gate electrode and the source electrode of the driving transistor Td and the current flowing through the driving transistor Td and the current flowing through the organic light emitting diode E The operating voltage and operating current of the driving thin film transistor Td and the organic light emitting diode E are determined at the same point of the flowing current.

Meanwhile, the display area AA of the conventional organic light emitting diode display device includes two arbitrary points A and B, and at the two points A and B, the power supply voltage VDD or the ground voltage VSS may be different from each other As a result, the current flowing through the organic light emitting diode E will be described with reference to the drawings.

FIG. 3A is a graph showing an operation current and an operation voltage according to a change in the power supply voltage of the organic light emitting diode of the conventional organic light emitting diode display device, FIG. 3B is a graph showing a change FIG. 5 is a graph showing an operating current and an operating voltage according to FIG.

3A and 3B, the operation current I OLED and the operation voltage Vd of the organic light emitting diode E of the conventional organic light emitting diode display device are determined by the current-voltage The operating current I OLED and the operating voltage Vd of the organic light emitting diode E are determined at the intersection of the characteristic curve and the current-voltage characteristic curve of the organic light emitting diode E.

At this time, each pixel region is repeated as much as the resolution. As a result, due to the resistance of each of the power supply line PL and the second electrode 15, the power supply voltage PL, which is transmitted through the power supply line PL and the second electrode 15, (VDD) and the base voltage (VSS) are different in each pixel region.

Hereinafter, the case where the base low voltage VSS is constant and the power source voltage VDD fluctuates will be described with reference to FIG. 3A.

The operation current I OLED and the operation voltage Vd of the organic light emitting diode E are determined by the current-voltage characteristic curve of the driving thin film transistor Td and the current-voltage characteristic curve of the organic light emitting diode E, Adjusted at the intersection of the curves.

At this time, the power supply line (PL in FIG. 1) for applying the power supply voltage VDD to each pixel is repeated by the resolution of the organic light emitting diode display device so as to apply the power supply voltage VDD to each pixel, PL of FIG. 1) contacts the plurality of pixels, and the power supply wiring (PL of FIG. 1) extends to one end of the display area (AA of FIG. 1).

Therefore, a resistance is generated in the power supply line (PL in FIG. 1) itself, and the power supply voltage VDD applied to each pixel is not constant and fluctuation may occur.

That is, when the difference between the power supply voltage VDD applied to the A point and the power supply voltage VDD applied to the B point occurs, the operation current I OLED and the operation voltage Vd at the A and B points are respectively set to the first Can be determined by the operation current I OLED 1 and the first operation voltage Vd1 and the second operation current I OLED 2 and the second operation voltage Vd2.

Accordingly, the operation current I OLED and the operation voltage Vd are different for each pixel region, and light of different gradations is emitted for each pixel region with respect to the same image data.

Hereinafter, the case where the power supply voltage VDD is constant and the base voltage VSS varies is described with reference to FIG. 3B.

The operation current I OLED and the operation voltage Vd of the organic light emitting diode E are determined by the current-voltage characteristic curve of the driving thin film transistor Td and the current-voltage characteristic curve of the organic light emitting diode E, Adjusted at the intersection of the curves.

At this time, an external power supply unit (not shown) applies a ground voltage VSS to the second electrode (15 in FIG. 1) formed to cover the display area (AA in FIG. 1) through the base wiring do.

On the other hand, the contact resistance generated at the contact portion between the base wire 14 and the second electrode 15 is one of the major causes of the fluctuation of the base voltage VSS. The contact resistance causes the base voltage VSS) may occur.

Therefore, the base low voltage VSS applied to the second electrode 15 formed in the entire display area AA due to the contact resistance is not constant and fluctuation occurs.

That is, when the difference between the base low voltage VSS applied to the point A and the base low voltage VSS applied to the point B occurs, the operation current I OLED and the operation voltage Vd at the points A and B are set to the third operating current (I OLED. 3) and a can be determined in a third operating voltage (Vd3) and a fourth operating current (I OLED 4) and a fourth operating voltage (Vd4).

Accordingly, the operation current I OLED and the operation voltage V d are different for each pixel region, and light of different gradations is emitted for each pixel region.

As described above, the operating current and the operating voltage of the organic light emitting diode E at the points A and B in FIG. 1 are changed by the fluctuations of the power supply voltage VDD and the base voltage VSS.

At this time, the variation of the power source voltage VDD can be compensated by changing the circuit structure in the pixel region. However, the contact resistance between the base wire 14 and the second electrode 15, which is one of the causes of variation of the base- There arises a problem that it is difficult to compensate only by the change of the circuit structure.

The present invention has been made to solve the above problems, and it is an object of the present invention to provide an organic light emitting diode display device that minimizes variation of the second electrode.

According to an aspect of the present invention, there is provided a display device comprising: a first substrate divided into a display region in which an image is displayed and a non-display region surrounding the display region; A gate wiring, a data wiring, and a power wiring formed on the first substrate and defining a pixel region intersecting with each other; A switching thin film transistor connected to the gate wiring and the data wiring; a driving thin film transistor connected to the switching thin film transistor and the power wiring; A passivation layer formed on the switching thin film transistor and the driving thin film transistor, the passivation layer including a first concavo-convex pattern corresponding to the non-display area; An organic light emitting diode formed on the protective layer of the display region and including a first electrode, an organic light emitting layer, and a second electrode; And a base wire formed on the protective layer of the non-display area and having a second uneven pattern corresponding to the first uneven pattern and contacting the second electrode.

At this time, the base wire is formed to surround at least one side of the display region.

The first relief pattern is formed in all or a part of the non-display area.

The second electrode includes a third irregular pattern corresponding to the first and second irregular patterns.

And a bank layer covering the edge portion of the first electrode and the edge portion of the base wiring and exposing a central portion of the first electrode and a central portion of the base wiring.

The base wiring is formed of the same material and in the same process as the first electrode.

The driving thin film transistor includes a gate electrode, a semiconductor layer, a source electrode, and a drain electrode, and the protective layer includes a source contact hole and a drain contact hole that respectively expose the source electrode and the drain electrode, A wiring line is connected to the source electrode through the source contact hole, and the first electrode is connected to the drain electrode through the drain contact hole.

At this time, the source and drain contact holes and the first relief pattern are formed through the same process.

In the present invention, the contact area between the first electrode and the second electrode is increased to reduce the resistance of the second electrode, thereby minimizing the variation of the second electrode.

1 is a schematic view of a conventional organic light emitting diode display device.
2 is a cross-sectional view taken along line II-II in Fig.
3A is a graph showing driving currents of organic light emitting diodes of a conventional organic light emitting diode display device.
FIG. 3B is a graph illustrating a driving voltage of an organic light emitting diode of a conventional organic light emitting diode display device.
4 is a schematic view illustrating an organic light emitting diode display device according to an embodiment of the present invention.
5 is a cross-sectional view taken along line IV-IV in Fig.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

4 is a schematic view illustrating an organic light emitting diode display device according to an embodiment of the present invention.

As shown in the figure, an organic light emitting diode display device according to an embodiment of the present invention includes a display panel 110 for displaying an image and a gate driver 120 (not shown) for generating and supplying a signal for operating elements of the display panel 110 And a data driver 130.

At this time, the display panel 110 is divided into a display area AA in which an image is displayed and a non-display area NAA surrounding the display area.

The display panel 110 includes a gate line GL and a data line DL which intersect each other and define a pixel region and a power line PL for applying a power source voltage and spaced apart from the data line DL. And is electrically connected to an external power source (not shown), and a base wire 214 is formed on one side of the display area.

A first electrode (not shown) is formed for each pixel region of the display region AA, and a second electrode 215 is formed over the non-display region NAA.

Although not shown, an organic light emitting layer is disposed between the first electrode and the second electrode 215.

Switching and driving thin film transistors Ts and Td, a storage capacitor CS, and the like, which are connected to the power supply line PL, the gate line GL and the data line DL, The organic light emitting diode E is located.

The organic light emitting diode display device having such a structure is divided into a top emission type and a bottom emission type according to a transmission direction of light emitted through the organic light emitting diode E. [ In this case, the lower light emitting method has a problem that the aperture ratio is lowered, and therefore, the upper light emitting method is mainly used.

Although not shown, the display panel 110 of the organic light emitting diode display device of the top emission type includes a first substrate and a second substrate facing the first substrate, and a semiconductor layer, a gate insulating film, An interlayer insulating film having electrodes, semiconductor layer contact holes, and source and drain electrodes are sequentially stacked to constitute switching and driving thin film transistors Ts and Td.

At this time, the gate electrode of the switching thin film transistor Ts is connected to the gate line GL, the source electrode thereof is connected to the data line DL, and the drain electrode is connected to the gate of the storage capacitor CS and the gate electrode of the driving thin film transistor Td. Electrode.

The source electrode of the driving thin film transistor Td is connected to the VDD wiring, and the drain electrode is connected to the organic light emitting diode.

The organic light emitting diode E includes a first electrode (not shown) connected to the drain electrode of the driving TFT Td for each pixel region, a second electrode 15 formed on the entire surface of the display region AA, And an organic light emitting layer (not shown) formed between the first electrode and the second electrode 215.

At this time, the power supply voltage VDD is applied to the power supply line PL and the ground voltage VSS is applied to the second electrode 215 of the organic light emitting diode E.

A part of the second electrode 215 is in contact with the base wire 214 and a ground voltage VSS is applied to the second electrode 15 from an external power supply unit (not shown).

At this time, the first electrode may be made of a material having a relatively high work function value to serve as an anode electrode, and the second electrode 215 may be made of a material having a relatively low work function value to serve as a cathode electrode .

Here, for the top emission, the second electrode (VSS) formed on the top of the first substrate has a transmission characteristic with respect to visible light, and the first electrode formed below the second electrode (VSS) It is preferable that it has a reflection characteristic with respect to

At this time, since the material having a relatively low work function value constituting the second electrode (VSS) is generally a metal material having opaque characteristics, the second electrode (VSS) made of such opaque metal material has a sufficient transmittance It can be made to have a transmittance characteristic with respect to visible light by forming it with a relatively thin thickness.

In the organic light emitting diode display device, when a signal is applied through the gate line GL, the switching thin film transistor Ts is turned on and the signal of the data line DL is applied to the driving thin film transistor Td. The driving thin film transistor Td is turned on so that light is output through the organic light emitting diode E. At this time, when the driving thin film transistor Td is turned on, the level of the electric current flowing from the power supply line PL to the organic light emitting diode E is determined. Accordingly, the organic light emitting diode E is gray- and the storage capacitor CS can maintain the gate voltage of the driving thin film transistor Td constant when the switching thin film transistor Ts is turned off so that the switching thin film transistor Ts The level of the current flowing through the organic light emitting diode E can be kept constant until the next frame.

On the other hand, the base wire 214 is formed in the non-display area NAA. For example, the base wire 214 can be formed to surround at least one surface of the display area AA.

The area of the base wire 214 which is in contact with the second electrode is larger than that of the conventional one.

Accordingly, the contact area between the base wire 14 of the organic light emitting diode display device and the second electrode 15 formed on the entire surface of the display area AA is increased compared to the related art, and the contact resistance is minimized.

Hereinafter, the contact area between the base wire 214 and the second electrode 215 is expanded with reference to the drawings.

5 is a cross-sectional view taken along the line V-V in Fig.

4, the organic light emitting diode display device includes a first substrate 200 on which a switching and driving thin film transistor (Ts and Td in FIG. 4) and an organic light emitting diode (E in FIG. 4) And a second substrate 300 for encapsulation.

A gate wiring (GL in FIG. 4) is formed in one direction on the first substrate 200, and the power wiring 210 is formed in parallel with the gate wiring (GL in FIG. 3).

A gate electrode 217 is formed in each switching and driving thin film transistor (Ts and Td in Fig. 3), and the gate wiring (GL in Fig. 4), the power supply wiring 210 and the gate electrode 217 And a gate insulating film 213 is formed on the entire surface.

3) and the data lines (DL in FIG. 3) are formed. In the switching and driving regions (Ts and Td in FIG. 3), pixel regions are formed on the gate insulating film 213, A semiconductor layer 218 composed of an active layer of pure amorphous silicon corresponding to the gate electrode 217 and an ohmic contact layer (not shown) of impurity amorphous silicon spaced apart from the active layer, Source and drain electrodes 219a and 219b are formed.

3) is connected to the gate wiring (GL in Fig. 3), and the source electrode of the switching thin film transistor (Ts in Fig. 3) is connected to the data wiring (DL in Fig. 3) And the drain electrode of the switching thin film transistor (Ts in FIG. 3) is connected to the gate electrode 217 of the driving thin film transistor (Td in FIG. 3).

At this time, a source contact hole 221 and a drain contact 227 exposing the source and drain electrodes 219a and 219b of the driving thin film transistor (Td in Fig. 3) are formed on the switching and driving thin film transistors (Ts and Td in Fig. 3) A protective layer 220 having a hole (not shown) is formed.

The power supply contact hole 225 exposing the power supply line 210 is formed by patterning the passivation layer 220 and the gate insulating layer 213 under the passivation layer 220.

The protective layer 220 corresponding to the non-display area (NAA in FIG. 3) is patterned to have a first concave-convex pattern 220a.

At this time, the concavo-convex shape may be formed through a process using, for example, a transflective mask, and may be formed over the entire area of the non-display area (NAA in FIG. 3) .

A first electrode 223 is formed in the upper portion of the passivation layer 220 to be in contact with the drain electrode 219b of the driving thin film transistor Td through the drain contact hole 222, A power assist pattern 232 which is made of the same material as the power source contact hole 223 and is in contact with the power source wiring 210 and the source electrode 219a through the power source contact hole 225 and the source contact hole 221 is formed.

On the other hand, a base wire 214 is formed on the first concavo-convex pattern 220a of the passivation layer 220. [

At this time, the base wire 214 may be formed of the same material as the first electrode 223 and may be formed in the same process as the first electrode 223. The base wire 214 has the second uneven pattern 214a corresponding to the first uneven pattern 220a by the first uneven pattern 220a.

The first electrode 223 may be formed of a metal material having a relatively high work function value and a reflection characteristic with respect to visible light, for example, aluminum (Al), aluminum alloy, silver (Ag), magnesium Mg, and Au, and the power supply assisting pattern 232 is made of the same material as the first electrode 223.

Accordingly, the first electrode 223 and the power assist pattern 232 may be formed to have a relatively low resistance.

A bank layer 240 is formed on the first electrode 223 and the power supply assist pattern 232.

At this time, the bank layer 240 is formed so as to overlap with the rim of the first electrode 223 surrounding the respective pixel regions to expose the central portion of the first electrode 223.

In addition, the bank layer 240 is formed covering the edge of the base wiring 214 and exposes the central portion of the base wiring 214.

The organic light emitting layer 224 is formed on the entire surface of the first substrate 200 including the bank layer 240 and the first electrode 223.

At this time, a second electrode 215 is formed on the organic light emitting layer 224, and the second electrode 215 is formed on the entire display area (AA in FIG. 3) and the non-display area (NAA in FIG. 3).

Therefore, the second electrode 215 contacts the base wire 214 of the concavo-convex shape and has the third concavo-convex pattern 215a corresponding to the first and second concavo-convex patterns 220a and 214a.

At this time, the second electrode 215 may be formed of a metal material having a relatively low work function value to serve as a cathode electrode, and may have a relatively thin thickness so as to have transmission characteristics with respect to visible light.

On the other hand, since the contact area between the base wire 214 and the second electrode 215 is formed in a concavo-convex shape, the contact area between the base wire 214 and the second electrode 215 is increased and the contact resistance is reduced.

Therefore, the variation of the base low voltage VSS according to the position of the second electrode 215 can be minimized. Thus, the variation of the operating voltage and the operating current of each pixel region is minimized, and light of uniform gradation can be emitted for each pixel region for each identical image data.

The concave and convex shapes of the source and drain contact holes 221 and 222 and the power source contact hole 225 and the protective layer 220 formed in the protective layer 220 may be formed in the same process.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention as defined in the appended claims. It can be understood that

100: liquid crystal panel 200:
220: timing controller 230: compensation signal generator
240: Gate driver 260: Data driver
AA1: first display area AA2: second display area

Claims (8)

  1. A first substrate divided into a display region in which an image is displayed and a non-display region surrounding the display region;
    A gate wiring, a data wiring, and a power wiring formed on the first substrate and defining a pixel region intersecting with each other;
    A switching thin film transistor connected to the gate wiring and the data wiring; a driving thin film transistor connected to the switching thin film transistor and the power wiring;
    A passivation layer formed on the switching thin film transistor and the driving thin film transistor, the passivation layer including a first concavo-convex pattern corresponding to the non-display area;
    An organic light emitting diode formed on the protective layer of the display region and including a first electrode, an organic light emitting layer, and a second electrode;
    A second concavo-convex pattern formed on the protective layer of the non-display area and corresponding to the first concave-convex pattern,
    And an organic light emitting diode (OLED) display device.
  2. The method according to claim 1,
    Wherein the base wiring is formed to surround at least one side of the display region.
  3. The method according to claim 1,
    And the first concavo-convex pattern is formed on all or a part of the non-display area.
  4. The method according to claim 1,
    And the second electrode includes a third irregular pattern corresponding to the first and second irregular patterns.
  5. The method according to claim 1,
    And a bank layer covering the edge portion of the first electrode and the edge portion of the base wiring and exposing a center portion of the first electrode and a center portion of the base wiring.
  6. The method according to claim 1,
    Wherein the base wiring is formed of the same material and in the same process as the first electrode.
  7. The method according to claim 1,
    Wherein the driving thin film transistor includes a gate electrode, a semiconductor layer, a source electrode, and a drain electrode,
    The protective layer includes a source contact hole and a drain contact hole which respectively expose the source electrode and the drain electrode,
    The power supply wiring is connected to the source electrode through the source contact hole,
    And the first electrode is connected to the drain electrode through the drain contact hole.
  8. 8. The method of claim 7,
    Wherein the source and drain contact holes and the first relief pattern are formed through the same process.
KR1020130109327A 2013-09-11 2013-09-11 organic light emitting diode display device KR102028052B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020130109327A KR102028052B1 (en) 2013-09-11 2013-09-11 organic light emitting diode display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020130109327A KR102028052B1 (en) 2013-09-11 2013-09-11 organic light emitting diode display device

Publications (2)

Publication Number Publication Date
KR20150030088A true KR20150030088A (en) 2015-03-19
KR102028052B1 KR102028052B1 (en) 2019-10-02

Family

ID=53024280

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130109327A KR102028052B1 (en) 2013-09-11 2013-09-11 organic light emitting diode display device

Country Status (1)

Country Link
KR (1) KR102028052B1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170098795A1 (en) * 2014-02-12 2017-04-06 Samsung Display Co., Ltd. Organic light emitting display device and method of manufacturing the same
WO2019142582A1 (en) * 2018-01-18 2019-07-25 ソニーセミコンダクタソリューションズ株式会社 Display device and electronic machine

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070037090A (en) * 2005-09-30 2007-04-04 삼성에스디아이 주식회사 Organic light emitting display with conductive spacer and the producing method thereof
KR20120114685A (en) * 2011-04-07 2012-10-17 엘지디스플레이 주식회사 Oganic electro-luminesence display device and manufactucring metod of the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070037090A (en) * 2005-09-30 2007-04-04 삼성에스디아이 주식회사 Organic light emitting display with conductive spacer and the producing method thereof
KR20120114685A (en) * 2011-04-07 2012-10-17 엘지디스플레이 주식회사 Oganic electro-luminesence display device and manufactucring metod of the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170098795A1 (en) * 2014-02-12 2017-04-06 Samsung Display Co., Ltd. Organic light emitting display device and method of manufacturing the same
US9941484B2 (en) * 2014-02-12 2018-04-10 Samsung Display Co., Ltd. Organic light emitting display device and method of manufacturing the same
WO2019142582A1 (en) * 2018-01-18 2019-07-25 ソニーセミコンダクタソリューションズ株式会社 Display device and electronic machine

Also Published As

Publication number Publication date
KR102028052B1 (en) 2019-10-02

Similar Documents

Publication Publication Date Title
US7667674B2 (en) Organic electroluminescent light emitting display device
KR100653297B1 (en) Electro luminescene display device
KR100642491B1 (en) Organic Electro luminescence Device
DE102005063623B3 (en) Active matrix component with organic light-emitting diodes and production method for such
US6781320B2 (en) Active matrix organic electroluminescence display device
US7248236B2 (en) Organic light emitting diode display having shield electrodes
US6633134B1 (en) Active-matrix-driven organic EL display device
US6933529B2 (en) Active matrix type organic light emitting diode device and thin film transistor thereof
EP2998996B1 (en) Amoled display with optical feedback compensation
TWI253877B (en) Dual panel type organic electroluminescent device and method for fabricating the same
DE10361010B4 (en) Organic electroluminescent display device and method of making the same
CN100590880C (en) Projective organic electroluminescent display and its manufacturing method
US20130056784A1 (en) Organic Light-Emitting Display Device and Method of Fabricating the Same
CN100470842C (en) Active matrix organic electrogenerated luminescent device and manufacturing method thereof
US7830476B2 (en) Electroluminescence display device comprising a drain electrode being directly contacted with the upper surface of the first transparent conductive layer and the side surface of the second conductive layer and fabricating methods thereof
US8593057B2 (en) Organic electroluminescent display device
US6784032B2 (en) Active matrix organic light emitting display and method of forming the same
JP3612494B2 (en) Display device
JP5030345B2 (en) Semiconductor device
JP4220277B2 (en) Active matrix organic electroluminescent device
CN1276404C (en) Electric-exciting luminous displaying device
JP4990538B2 (en) Display device and driving method thereof
KR101209055B1 (en) Display device and driving method thereof
CA2641655A1 (en) High aperture ratio pixel layout for display device
JP4785809B2 (en) Dual panel type organic electroluminescent device and manufacturing method thereof

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant