KR20150010773A - Deposition device and deposition method - Google Patents

Deposition device and deposition method Download PDF

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Publication number
KR20150010773A
KR20150010773A KR1020147034565A KR20147034565A KR20150010773A KR 20150010773 A KR20150010773 A KR 20150010773A KR 1020147034565 A KR1020147034565 A KR 1020147034565A KR 20147034565 A KR20147034565 A KR 20147034565A KR 20150010773 A KR20150010773 A KR 20150010773A
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South Korea
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material particles
particles
electrode
ionized
deposition apparatus
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KR1020147034565A
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Korean (ko)
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히로후미 나카노
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라보텍 가부시키가이샤
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Publication of KR20150010773A publication Critical patent/KR20150010773A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605—Carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

A deposition apparatus 100 according to the present invention is a deposition apparatus 100 for depositing material particles P in which a material particle P is ionized by ionizing a material particle P by a photoelectric effect (20) and electrode portions (32, 34) for guiding the ionized material particles (P) to a region determined by the Coulomb force.

Description

[0001] DEPOSITION DEVICE AND DEPOSITION METHOD [0002]

The present invention relates to a deposition apparatus and a deposition method.

As a deposition apparatus for depositing a material on a substrate, for example, a sputtering apparatus, a vacuum deposition apparatus, a CVD (Chemical Vapor Deposition) apparatus, and the like are known. As such a deposition apparatus, an ion plating apparatus is attracting attention because a good film having good adhesion can be formed. For example, Japanese Unexamined Patent Application Publication No. 9-256148 (Patent Document 1) discloses an ion plating apparatus for ionizing a vaporizing material by an electron beam emitted from a plasma electron gun and depositing ionized evaporation material (material particles) on a substrate have.

Patent Document 1: JP-A-9-256148

However, in the deposition apparatus described in Patent Document 1, there is a problem that the particle diameter of the deposited material particles is large and the particle diameter of the deposited material particles can not be controlled.

One of the objects according to some aspects of the present invention is to provide a deposition apparatus capable of controlling the particle size of the material particles to be deposited. One of the objects of some aspects of the present invention is to provide a deposition method capable of controlling the particle size of the material particles to be deposited.

(1) A deposition apparatus according to the present invention,

1. A deposition apparatus for depositing material particles,

An ionization unit for ionizing the material particles by a photoelectric effect in a reaction chamber to which the material particles are supplied,

And an electrode portion for guiding the ionized material particles to a region defined by the Coulomb force.

According to such a deposition apparatus, since the ionization portion ionizes the material particles by the photoelectric effect, the charge density per unit mass becomes larger as the particle size of the ionized material particles becomes smaller. Therefore, the smaller the particle diameter of the material particles, the larger the influence of the Coulomb's force acting on the material particles. Therefore, the particle diameter of the material particles to be deposited can be controlled by applying the Coulomb force to the material particles ionized by the ionizing portion by the electrode portion.

(2) In the deposition apparatus according to the present invention,

The ionization unit may ionize the material particles by irradiating electromagnetic waves.

According to such a deposition apparatus, material particles can be ionized while maintaining the reaction chamber at a high degree of vacuum, for example.

(3) In the deposition apparatus according to the present invention,

And a material particle supply unit for supplying the material particles to the reaction chamber.

(4) In the deposition apparatus according to the present invention,

The material particle supply unit may include a first electrode and a second electrode and generate a discharge between the first electrode and the second electrode to supply the material particles

(5) In the deposition apparatus according to the present invention,

The material particle supply unit may supply the material particles by irradiating electromagnetic waves to vaporize the material.

(6) In the deposition apparatus according to the present invention,

The material particle supplying section may supply a fluid containing the material particles.

(7) In the deposition apparatus according to the present invention,

And a temperature control unit for controlling the temperature of the material particles.

According to such a deposition apparatus, the particle diameter of the material particles supplied to the reaction chamber can be controlled, for example, when the particle diameter of the material particles varies depending on the temperature.

(8) In the deposition apparatus according to the present invention,

And a magnetic field generator for generating a magnetic field in a path of the ionized material particles.

According to such a deposition apparatus, ionized material particles can be selected according to their magnetic properties.

(9) In the deposition apparatus according to the present invention,

And a mass filter unit for selecting the ionized material particles according to the mass.

According to such a deposition apparatus, the particle size of the material particles to be deposited can be more controlled

(10) In the deposition apparatus according to the present invention,

And a valve disposed between the reaction chamber and the sample chamber in which the ionized material particles are deposited.

According to such a deposition apparatus, the deposition amount of the material particles to be deposited can be controlled.

(11) In the deposition apparatus according to the present invention,

The electrode unit may have an electron collecting electrode for collecting electrons emitted from the material particles by a photoelectric effect and a material particle collecting electrode for collecting ionized material particles.

(12) In the deposition apparatus according to the present invention,

And a neutralizing unit for supplying charged particles to the material particles deposited on the material particle collecting electrode and neutralizing the material particles on the material particle collecting electrode.

According to such a deposition apparatus, the material particles deposited on the material particle collecting electrode can be neutralized (neutralized).

(13) A deposition method according to the present invention,

As a deposition method for depositing material particles,

Supplying the material particles to a reaction chamber,

A step of ionizing the material particles supplied to the reaction chamber by a photoelectric effect,

And causing the ionized material particles to be guided to a region defined by the Coulomb force and deposited.

According to this deposition method, the material particles are ionized by the photoelectric effect, so that the smaller the particle diameter of the ionized material particles, the larger the charge density per unit mass. Therefore, the smaller the particle diameter of the material particles, the larger the influence of the Coulomb's force acting on the material particles. Therefore, by controlling the Coulomb force on the material particles ionized by the photoelectric effect, the particle size of the material particles to be deposited can be controlled.

1 is a perspective view schematically showing a deposition apparatus according to an embodiment of the present invention.
2 is a schematic view for explaining a configuration of a deposition apparatus according to an embodiment of the present invention.
3 is a flowchart showing an example of a method of depositing material particles according to an embodiment of the present invention.
4 is a schematic view for explaining a configuration of a deposition apparatus according to a first modification of the embodiment of the present invention.
5 is a schematic view for explaining a configuration of a deposition apparatus according to a second modification of the embodiment of the present invention.
6 is a schematic view for explaining the configuration of a deposition apparatus according to the third modification of the embodiment of the present invention.
7 is a schematic view for explaining a configuration of a deposition apparatus according to a fourth modification of the embodiment of the present invention.
8A is an SEM photograph showing a result of observation of a sample according to an embodiment of the present invention with a scanning electron microscope.
8B is a SEM photograph showing the result of observing a sample of the example according to the present invention with a scanning electron microscope.
FIG. 9A is a TEM photograph showing a result of observation of a sample of the example according to the present invention with a transmission electron microscope. FIG.
FIG. 9B is a TEM photograph showing the result of magnifying and observing a part of the image shown in FIG. 9A. FIG.
10A is a TEM photograph showing the result of observation of a sample of the example according to the present invention with a transmission electron microscope.
10B is a TEM photograph showing a result of magnifying and observing a part of the image shown in FIG.
11A is a TEM photograph showing the result of observation of a sample of the example according to the present invention with a transmission electron microscope.
11B is a TEM photograph showing a result of magnifying and observing a part of the image shown in Fig.
12A is a TEM photograph showing the result of observation of a sample of the example according to the present invention with a transmission electron microscope.
12B is a TEM photograph showing a result of magnifying and observing a part of the image shown in FIG. 12A.
13A is an SEM photograph showing a result of observing a sample of a comparative example with a scanning electron microscope.
13B is an SEM photograph showing the result of observation of a sample of the comparative example with a scanning electron microscope.
13C is an SEM photograph showing a result of observation of a sample of a comparative example with a scanning electron microscope.
13D is an SEM photograph showing the result of observation of a sample of the comparative example with a scanning electron microscope.
14A is an SEM photograph showing a result of observation of a sample of a comparative example with a scanning electron microscope.
14B is an SEM photograph showing the result of observation of a sample of the comparative example with a scanning electron microscope.
14C is an SEM photograph showing the result of observation of a sample of the comparative example with a scanning electron microscope.
14D is an SEM photograph showing a result of observation of a sample of the comparative example with a scanning electron microscope.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. Further, the embodiments described below do not unduly limit the contents of the present invention described in claims. In addition, all the constitutions described below are not necessarily essential elements of the present invention.

1. Deposition device

First, a deposition apparatus according to an embodiment of the present invention will be described with reference to the drawings. 1 is a perspective view schematically showing a deposition apparatus 100 according to an embodiment of the present invention. 2 is a schematic view for explaining the configuration of the deposition apparatus 100 according to the embodiment of the present invention. For convenience, the illustration of the chamber 2 and the temperature control unit 14 is omitted in Fig.

The deposition apparatus 100 includes an ionization section 20 and an electrode section 30 as shown in Figs. The deposition apparatus 100 may further have, for example, a chamber 2, a material particle supply section 10, and a mass filter section 40.

The deposition apparatus 100 is a device for depositing the material particles P. [ More specifically, in the deposition apparatus 100, the material particle supplying section 10 supplies the material particles P to the reaction chamber 2a of the chamber 2, the material particles P supplied to the reaction chamber 2a, The ionized portion 20 is ionized by the photoelectric effect and the ionized material particles P are guided to the material particle collecting electrode 34 by the Coulomb force so that the material particles P are deposited .

The material particles P include particles of carbon nanotubes, carbon nanotubes embedded with a metal or a semiconductor, fullerene, metal, insulator (ceramics, etc.), organic materials (proteins, cells and viruses) , The lumps of these particles. When the material particles P are substances whose physical and scientific properties are changed by electromagnetic waves (such as ultraviolet rays) such as proteins, cells and viruses, electromagnetic wave absorbers for absorbing electromagnetic waves may be added to the material particles P do. The shape of the material particles P is not particularly limited and may take various shapes such as spheres, polyhedrons, needles, and the like. The particle diameter of the material particles P is, for example, several nm to several tens of micrometers. Here, when the shape of the material particles (P) is not spherical, the particle diameter of the material particles (P) refers to the equivalent volume equivalent diameter, and specifically refers to the diameter of a sphere having the same volume as the material particles (P).

The chamber 2 has a reaction chamber 2a for ionizing the material particles P and a sample chamber 2b in which the material particles P are deposited. A valve 4 capable of opening and closing is disposed between the reaction chamber 2a and the sample chamber 2b. By opening the valve 4, the reaction chamber 2a and the sample chamber 2b communicate with each other. In the illustrated example, the inside of the chamber 2 is divided into the reaction chamber 2a and the sample chamber 2b, but the inside of the chamber 2 may be a single space. That is, the reaction chamber 2a and the sample chamber 2b may be one space without being partitioned. The inside of the chamber 2 is evacuated by a vacuum evacuating device (not shown) connected to the exhaust pipe 6. The inside of the chamber (2) is, for example, a vacuum atmosphere. Here, the vacuum means a state in which the pressure is lower than atmospheric pressure. Although not shown, a shutter for controlling the deposition amount (film thickness) of the material particles P to be deposited on the material particle collecting electrode 34 may be provided in the chamber 2.

The material particle supplying section 10 supplies the material particles P to the reaction chamber 2a. The material particle supplying section 10 has a supporter 13 for supporting the supporter 12 and the supporter 12 in the illustrated example. The supporter 12 is provided so as to be able to hold the raw material M therein. The supporter 12 is disposed in a cylindrical electron collecting electrode 32. The supporter 12 is, for example, a resistance heating boat. The material particles P can be obtained by evaporating the material M by heating the material M by means of the supporter 12 by vacuum heating.

The method of evaporating the raw material M in the material particle supplying section 10 is not particularly limited. The material particles P may be obtained by irradiating the raw material M on the supporter 12 with an electromagnetic wave (for example, a laser beam) to obtain the raw material M (laser application). At this time, by using the ultraviolet laser, the raw material M can be evaporated and the material particles P can be ionized. Therefore, the light source of the material particle supplying portion 10 for evaporating the material M and the light source of the ionizing portion 20 for ionizing the material particles P can be made common.

In the reaction chamber 2a, the temperature of the material particles P is controlled by the temperature control unit 14. The temperature control unit 14 can control the temperature of the material particles P. [ The temperature control unit 14 controls the temperature of the material particles P by supplying a fluid from the pipe communicating with the reaction chamber 2a to the reaction chamber 2a in the illustrated example. As the fluid supplied from the temperature control unit 14, for example, an inert gas such as helium or argon may be used. For example, when the particle diameter of the material particles P changes due to the temperature at which the material particles P are evaporated from the material M, the temperature control unit 14 controls the temperature of the material particles P, The particle diameter of the supplied material particles P can be controlled.

The ionization section 20 can ionize the material particles P by the photoelectric effect in the reaction chamber 2a. The ionization section 20 irradiates an electromagnetic wave L having an energy higher than the work function of the material particles P to ionize the material particles P in the illustrated example. The ionization part 20 is a light source for generating the electromagnetic wave L, for example, an ultraviolet lamp for irradiating ultraviolet rays. More specifically, the ionization section 20 is, for example, a mercury lamp, a carbon arc lamp, or a xenon lamp.

The ionization portion 20 is disposed outside the reaction chamber 2a and irradiates the electromagnetic wave L from the window portion 8 of the chamber 2 into the reaction chamber 2a. The window portion 8 can transmit the electromagnetic wave L. [ Although not shown, the ionization section 20 may irradiate the electromagnetic waves L to the material particles P in the reaction chamber 2a via a lens or a mirror.

Here, when the ionizing unit 20 irradiates the material particles P with an electromagnetic wave L having an energy higher than the work function of the material particles P, the electrons in the material particles P are excited and protrude into the space (Photoelectric effect). As a result, the material particles (P) lose electrons and become cationized. The charge amount of the material particles P ionized by the photoelectric effect is proportional to the surface area of the material particles P. [ The mass of the material particles (P) is proportional to the volume of the material particles (P). The charge density per unit mass of the material particles P is inversely proportional to the radius of the material particles P, that is, inversely proportional to the particle diameter of the material particles P. [ Therefore, the smaller the particle diameter of the material particles P, the larger the charge density per unit mass.

The electrons protruding from the material particles P depend on the intensity of the electromagnetic wave L. The larger the intensity of the electromagnetic wave L is, the more electrons are emitted. Therefore, by controlling the intensity of the electromagnetic wave L, the charge density per unit mass of the material particles P can be controlled.

The constitution of the ionization section 20 is not particularly limited as long as the material particles P can generate a photoelectric effect. For example, the ionization section 20 may be formed by introducing a gas such as Ar, Ne, or He into the reaction chamber 2a and applying a voltage to an electrode (not shown) in the reaction chamber 2a to generate an electromagnetic wave (For example, glow discharge) to generate photoelectric effect on the material particles P.

The electrode unit 30 can guide the ionized material particles P to the region determined by the Coulomb force. The electrode unit 30 has an electron collecting electrode 32 disposed in the reaction chamber 2a and a material particle collecting electrode 34 disposed in the sample chamber 2b.

The electron collecting electrode 32 is an anode in the illustrated example. As a result, electrons emitted from the material particles P can be trapped by the photoelectric effect. Further, the electron collecting electrode 32 can generate a Coulomb force (repulsive force) with the cationized material particles P. As a result, the ionized material particles P are accelerated in the direction away from the electron collecting electrode 32. The shape of the electron collecting electrode 32 is, for example, cylindrical.

The material particle collecting electrode 34 is a cathode in the illustrated example. Thereby, a Coulomb force (attracting force) is generated between the material particle collecting electrode 34 and the material particles P to attract the ionized material particles P. As a result, the material particles P are deposited on the material particle collecting electrode 34. For example, by disposing a substrate (not shown) on the material particle collecting electrode 34, the material particles P can be deposited on the substrate. The shape of the material particle collecting electrode 34 is, for example, a plate shape, and is a disk shape in the illustrated example.

Here, as described above, the smaller the particle diameter of the material particles P ionized by the photoelectric effect, the larger the charge density per unit mass. Therefore, the smaller the particle diameter of the material particles (P) is, the larger the influence of the Coulomb's force acting on the material particles (P) becomes. That is, the ionized material particles P are accelerated by the electron collecting electrode 32 and liable to be attracted by the material particle collecting electrode 34 as the particle size is smaller. Therefore, by controlling the voltage of the electrode unit 30, the particle diameter of the material particles P to be deposited can be controlled. For example, by increasing the voltage between the electrodes 32 and 34, the upper limit of the particle diameter of the material particles P to be deposited can be increased. By lowering the voltage between the electrodes 32 and 34, The upper limit of the particle size of the particles can be reduced.

The number of the electrodes constituting the electrode unit 30 is not particularly limited and the electrode unit 30 may be a single electrode Or may have three or more electrodes. Although not shown, the electrode unit 30 may be composed of only the electron collecting electrode 32, or may be composed only of the material particle collecting electrode 34. [

The mass filter portion 40 is disposed in the path of the ionized material particles P that travels toward the material particle collecting electrode 34. In the illustrated example, the mass filter portion 40 is disposed in the sample chamber 2b. The mass filter unit 40 can select the ionized material particles P according to the mass. Specifically, the mass filter unit 40 passes the material particles P in a predetermined mass range, and the material particles P that are not included in the predetermined mass range are changed in the proceeding direction, As shown in FIG. The mass filter unit 40 is, for example, a quadrupole mass filter having four cylindrical electrodes. In the depositing apparatus 100, the ionized material particles P may be deposited directly on the material particle collecting electrode 34 without providing the mass filter unit 40.

Although not shown, the deposition apparatus 100 may be provided with a gas supply section for supplying gas to the reaction chamber 2a. The gas supplying section can assist ionization of the material particles P and further control the charge amount of the material particles P by supplying the ionized or charged gas to the reaction chamber 2a. Further, the gas supply unit may not be provided, and the temperature control unit 14 may function as the gas supply unit.

Next, a method of depositing material particles using the deposition apparatus 100 according to the present embodiment will be described. 3 is a flowchart showing an example of a method of depositing material particles according to an embodiment of the present invention. A method of depositing material particles according to an embodiment of the present invention includes a step (S10) of supplying material particles (P) to a reaction chamber (2a), a step (S12) of ionizing the ionized material particles (P), and a step (S13) of guiding and depositing the ionized material particles (P) in the region determined by the Coulomb force.

First, the material particle supplying section 10 supplies the material particles P to the reaction chamber 2a (S10). The material particle supplying section 10 evaporates the material M by applying vacuum heating or electromagnetic wave (laser light) to supply the material particles P to the reaction chamber 2a. At this time, the temperature control unit 14 can control the particle size of the material particles P to be generated by controlling the temperature of the material particles P. The chamber 2 is evacuated through an exhaust pipe 6.

Next, the ionization section 20 ionizes the material particles P supplied to the reaction chamber 2a by the photoelectric effect (S12). The ionization section 20 ionizes the material particles P by irradiating the material particles P supplied to the reaction chamber 2a with an electromagnetic wave L. Electrons protruding from the material particles P by the photoelectric effect are collected in the electron collecting electrode 32.

Next, the ionized material particles P are led to the material particle collecting electrode 34 by the Coulomb force to deposit the electrode unit 30 (S14). The electrode unit 30 applies the Coulomb force to the ionized material particles P by the electron collecting electrode 32 and the material particle collecting electrode 34 and guides the ionized material particles P to the material particle collecting electrode 34. As a result, the material particles P are deposited on the material particle collecting electrode 34. The material particles P ionized by the photoelectric effect have a larger charge density per unit mass as the particle diameter of the material particles P is smaller and therefore the intensity of the electromagnetic wave L and the voltage of the electrode unit 30 are controlled The particle diameter of the material particles P to be deposited can be controlled. The mass filter portion 40 is disposed in the path of the ionized material particles P. Thereby, the material particles P having a predetermined mass range are deposited on the material particle collecting electrode 34 through the filter, and the material particles P which are not included in the predetermined mass range are changed in the proceeding direction, And is not deposited on the collecting electrode 34. Thereby, the particle diameter of the material particles P to be deposited can be more controlled. The accumulation amount of the material particles P can be controlled by opening and closing the valve 4. [

By the above process, the material particles P can be deposited.

The deposition apparatus 100 and the deposition method according to the embodiment of the present invention have, for example, the following characteristics.

In the deposition apparatus 100, the ionization section 20 ionizes the material particles P by the photoelectric effect, and the ionized material particles P are collected in the region where the electrode section 30 is determined by the Coulomb force Electrode 34), the particle diameter of the material particles P to be deposited can be controlled. In addition, since the ionized material particles P are accelerated and deposited by the Coulomb force, the deposited material particles P have a strong attraction force to the sediment (the material particle collecting electrode 34 and the substrate). As a result, agglomeration of the material particles P due to van der Waals force or the like can be prevented. Therefore, it is possible to prevent the material particles P from aggregating on the sediments to become large particles.

As described above, according to the deposition apparatus 100, since the particle diameter of the material particles P to be deposited can be controlled, a film of the material particles P having uniform particle diameters can be obtained. In addition, material particles P having desired particle diameters can be selectively obtained from a sample in which material particles P having various particle diameters are mixed.

In the deposition apparatus 100, the ionization section 20 can ionize the material particles P by irradiating electromagnetic waves L. Thereby, the material particles P can be ionized while maintaining the inside of the chamber 2 at a high degree of vacuum. For example, when the material particles P are ionized by using a gas plasma, a gas is required to generate plasma. Therefore, there is a case that the degree of vacuum in the chamber is lowered, and the impurities are liable to adhere to the sediments. In the depositing apparatus 100, since the material particles P are ionized by irradiating the electromagnetic waves L, such a problem does not occur.

In the deposition apparatus 100, the material particle supplying section 10 can supply the material particles P by irradiating electromagnetic waves L to vaporize the material M. [ Thereby, the raw material M can be evaporated by the electromagnetic wave L and the material particles P can be ionized. Therefore, the light source of the material particle supplying portion 10 for evaporating the material M and the light source of the ionizing portion 20 for ionizing the material particles P can be made common. As a result, the configuration of the apparatus can be simplified.

The deposition apparatus 100 includes a temperature control unit 14 that controls the temperature of the material particles P. [ The temperature control section 14 controls the temperature of the material particles P to control the temperature of the material particles P to be supplied to the reaction chamber 2a when the particle diameter of the material particles P changes by the temperature at the time of evaporation from the material M The particle diameter of the material particles P can be controlled. Therefore, the grain size of the material particles P to be deposited can be further controlled.

In the depositing apparatus 100, since the mass filter section 40 can select the ionized material particles P in accordance with the mass, the particle diameter of the material particles P to be deposited can be further controlled.

Since the deposition apparatus 100 includes the valve 4 disposed between the reaction chamber 2a and the sample chamber 2b in which the ionized material particles P are deposited, The deposition amount (film thickness) of the material particles P to be deposited can be controlled.

In the deposition apparatus 100, the electrode unit 30 includes an electron collecting electrode 32 for collecting electrons emitted from the material particles P by a photoelectric effect, a material for trapping the ionized material particles P And a particle collecting electrode (34). As a result, the material particles P can be efficiently guided to the material particle collecting electrode 34.

According to the deposition method according to the embodiment of the present invention, the step of supplying the material particles P to the reaction chamber 2a, the step of ionizing the material particles P supplied to the reaction chamber 2a by photoelectric effect And a step of causing the ionized material particles (P) to be guided to a region determined by Coulomb force and deposited. Therefore, the particle diameter of the material particles P to be deposited can be controlled. In addition, since the ionized material particles P are deposited by Coulomb force, aggregation of the material particles P can be prevented.

2. Variations

Next, a deposition apparatus according to a modification of the embodiment of the present invention will be described. Hereinafter, in a deposition apparatus according to a modified example of the embodiment of the present invention, members having the same functions as those of the deposition apparatus 100 described above are denoted by the same reference numerals, and a detailed description thereof will be omitted.

(1) First Modification

First, a deposition apparatus according to the first modification will be described with reference to the drawings. 4 is a schematic view for explaining the configuration of the deposition apparatus 200 according to the first modification.

In the example of the deposition apparatus 100, as shown in Figs. 1 and 2, the material particle supplying section 10 evaporates the raw material M by irradiating with vacuum heating or electromagnetic wave (laser light) And the material particles P were supplied.

4, the material particle supplying unit 10 generates a discharge between the first electrode 210 and the second electrode 212 to cause the material of the reaction chamber 2a, The material particles P are supplied. The discharge generated between the electrodes 210 and 212 is, for example, glow discharge, arc discharge, or the like.

The material particle supply unit 10 has a first electrode 210, a second electrode 212, and a support 214.

The first electrode 210 and the second electrode 212 are supported by the support portion 214, respectively. The first electrode 210 and the second electrode 212 are disposed in a cylindrical electron collecting electrode 32. The first electrode 210 and the second electrode 212 are connected to a power source (not shown), and a voltage is applied between the electrodes 210 and 212 by the power source, thereby generating a discharge. The material particle supplying section 10 can discharge the material particles P from at least one surface of the electrodes 210 and 212 by generating a discharge between the electrodes 210 and 212. For example, carbon nanotubes, fullerene particles, or a lump of these particles can be supplied as the material particles (P) by using at least one of the electrodes 210 and 212 as a material containing carbon. In addition, metal particles can be supplied as material particles (P), for example, by making at least one of the electrodes 210 and 212 a metal.

(2) Second Modification

Next, a deposition apparatus according to the second modification will be described with reference to the drawings. 5 is a schematic view for explaining the configuration of the deposition apparatus 300 according to the second modification.

In the example of the deposition apparatus 100, as shown in Figs. 1 and 2, the material particle supplying section 10 evaporates the raw material M by irradiating with vacuum heating or electromagnetic wave (laser light) And the material particles P were supplied.

In contrast, in the depositing apparatus 300, as shown in Fig. 5, the material particle supplying section 10 supplies a fluid containing the material particles P to the reaction chamber 2a.

In the deposition apparatus 300, the material particle supply unit 10 has a material particle supply pipe 310 communicating with the reaction chamber 2a. The material particle feed pipe 310 connects the reaction chamber 2a and a container (not shown) filled with a fluid containing the material particles P (not shown). As the fluid, for example, an inert gas may be used. The material particle supplying unit 10 supplies the fluid containing the material particles P in the container to the reaction chamber 2a via the material particle supply pipe 310. [

(3) Third Modification

Next, a deposition apparatus according to the third modification will be described with reference to the drawings. 6 is a schematic view for explaining the configuration of the deposition apparatus 400 according to the third modification.

6, the deposition apparatus 400 includes a magnetic field generating unit 410 that generates a magnetic field in the path of the ionized material particles P. [

The magnetic field generating section 410 is disposed in the sample chamber 2b in the illustrated example. More specifically, the magnetic field generating portion 410 is disposed between the mass filter portion 40 and the material particle collecting electrode 34. The arrangement of the magnetic field generating portion 410 is not particularly limited as long as it can generate a magnetic field in the path of the ionized material particles P. [ The magnetic field generating unit 410 may generate a static magnetic field or generate an alternating magnetic field. By generating a magnetic field in the path of the ionized material particles P, the magnetic field generating unit 410 can select the material particles P according to their magnetic properties. Therefore, according to the deposition apparatus 400, when the material particles P include a magnetic material and a non-magnetic material, only the magnetic material can be deposited or only the non-magnetic material can be deposited. In this deposition apparatus 400, for example, a magnetic material (magnetic toner) may be selected from a toner material containing a magnetic material and a nonmagnetic material, or a nonmagnetic material (nonmagnetic toner) may be selected.

Although the deposition apparatus 400 has the mass filter unit 40 and the magnetic field generation unit 410 in the example shown in the drawing, even if the magnetic field generation unit 410 is provided without installing the mass filter unit 40 do.

(4) Fourth Modification

Next, a deposition apparatus according to the fourth modification will be described with reference to the drawings. 7 is a schematic view for explaining the configuration of the deposition apparatus 500 according to the fourth modification.

7, the deposition apparatus 500 is provided with a neutralization unit (not shown) for supplying charged particles such as electrons and ions to the material particles P deposited on the material particle collecting electrode 34 and neutralizing Gt; 510 < / RTI >

The neutralization section 510 is provided, for example, in the sample chamber 2b. The neutralization unit 510 generates, for example, an electron beam or an ion beam, and emits the generated electron beam or ion beam toward the material particles P deposited on the material particle collecting electrode 34. [ The neutralization unit 510 is, for example, an electron gun or an ion gun.

The neutralizing unit 510 may also neutralize the material particles P by supplying the ionized fluid to the material particles P on the material particle collecting electrode 34. [ For example, the ionized fluid may be supplied from the temperature control unit 14. As such a neutralization unit 510, for example, an ionizer or the like may be used.

Since the deposition apparatus 500 includes the neutralization unit 510, the material particles P deposited on the material particle collecting electrode 34 can be neutralized (neutralized). In this case, when the material particles P are insulators, the charged material particles P are deposited on the material particle collecting electrode 34, so that the potential of the surface of the material particle collecting electrode 34 becomes apparent It may be the same potential as that of the electron collecting electrode 32. [ This causes a problem that the electric field between the electrodes 32 and 34 disappears and consequently the material particles P are not deposited on the material particle collecting electrode 34 even if the material particles P are charged by the photoelectric effect It happens. The depositing device 500 can neutralize the material particles P deposited on the material particle collecting electrode 34, so that such a problem does not occur.

The deposition apparatus 500 deposits the material particles P on the material particle collecting electrode 34 by performing steps S10, S12 and S14 shown in Fig. 3, for example, and then the neutralizing unit 510 , The charged particles are supplied to the material particles P deposited on the material particle collecting electrode 34 to neutralize the charged material particles P deposited on the material particle collecting electrode 34. [ Then, steps S10, S12, and S14 are performed again to further deposit the material particles P on the material particle collecting electrode 34. Then, By repeating the deposition of the material particles P and the neutralization of the material particles P, the material particles P can be deposited on the material particle collecting electrode 34 continuously.

The above-described embodiment and modifications are examples, and are not limited thereto.

For example, in the above-described embodiment and modified examples, the case where the material particles P are cationized has been described, but the material particles P may be anionized. For example, the material particles P and other particles are supplied to the reaction chamber 2a, and an electromagnetic wave having an energy higher than the work function of the other particles is irradiated. As a result, electrons are ejected from the other particles due to the photoelectric effect. At this time, protruding electrons are applied to the material particles (P), and the material particles (P) are anionized. When the material particles P are thus anionized, the electrode 32 becomes the cathode and the electrode 34 becomes the anode.

The atmosphere in the chamber 2 is not particularly limited as long as it is possible to ionize the material particles P by the photoelectric effect in the above embodiment and the modified example It is not limited. For example, the inside of the chamber 2 may be an atmospheric pressure atmosphere or a liquid atmosphere. For example, by filling the chamber 2 with fluorine oil or silicone oil, the inside of the chamber 2 can be brought into a liquid atmosphere.

It is also possible to suitably combine the embodiments and the modifications.

3. Example

Hereinafter, the present invention will be described more specifically by way of examples. The present invention is not limited to the following examples.

3.1. Sample preparation

Here, the results of experiments using the deposition apparatus 200 shown in Fig. 4 will be described.

The material particle collecting electrode 34 was made of stainless steel and had a peak effective diameter of about 20 mm and a voltage of -500 V was applied. On the material particle collecting electrode 34, a square silicon wafer of about 10 mm was fixed with a carbon tape, and the material particles P deposited on the silicon wafer were used as a sample for observation. The material particle supplying unit 10 uses an arc discharge method using a carbon electrode. That is, in this embodiment, the material particles P are carbon particles.

The electron collecting electrode 32 was made of stainless steel and a voltage of + 1000V was applied. As the ionization unit 20, material particles P were irradiated with ultraviolet rays using a deuterium lamp manufactured by Hamamatsu Photonics KK. The valve (4) uses a high vacuum sealing type valve manufactured by VAT Co., Helium (He) gas was introduced from the temperature controller 14 using a mass flow controller of HORIBA STEECH Co., Ltd. in several sccm.

After the inside of the reaction chamber 2a and the sample chamber 2b were evacuated to 5 x 10 < -4 > Pa with a turbo molecular pump, arc discharge was generated by the electrodes 210 and 212 under the above- Was deposited on a silicon wafer on the particle collecting electrode 34 to prepare a sample (hereinafter referred to as " sample of this embodiment ").

As a comparative example, a conventional arc discharge vapor deposition apparatus which does not have the ionization section 20 and the electrode section 30 and a conventional arc flash discharge deposition apparatus which does not have the ionization section 20 and the electrode section 30 (Hereinafter referred to as " sample of comparative example ") was prepared by depositing carbon on a silicon wafer. On the other hand, in the conventional arc flash discharge deposition apparatus, a pulse-like voltage is applied to generate arc discharge, thereby depositing carbon (arc flash method).

3.2. Experiment

The sample of this example was observed with a scanning electron microscope JSM-7001F manufactured by Japan Electronics Co., Ltd. and a transmission electron microscope JEM-2100 manufactured by Japan Electronics Co.,

A sample of the comparative example was observed with a scanning electron microscope JSM-7001F manufactured by Japan Electronics Co.,

3.3. result

8A and 8B are SEM photographs showing the results of observing a sample of this embodiment with a scanning electron microscope JSM-7001F manufactured by Japan Electronics Co., Incidentally, in Fig. 8A, observation was performed at an observation magnification of 200,000 times and an acceleration voltage of 1.5 kV. In Fig. 8B, observation was performed at an observation magnification of 100,000 times and an acceleration voltage of 1.5 kV.

Figs. 9A to 12B are TEM photographs showing the results of observation of a sample of this embodiment with a transmission electron microscope JEM-2100 manufactured by Japan Electronics Co., 9A to 12B, the visual fields are different from each other. FIG. 9B is a TEM photograph showing the result of magnifying and observing a part of the image shown in FIG. 9A. The same goes for the cases of Figs. 10A to 12B.

FIGS. 13A to 13D are SEM photographs showing the results of observation of a sample of a comparative example manufactured by a conventional arc discharge deposition apparatus with a scanning electron microscope JSM-7001F manufactured by Japan Electronics Co., Ltd. FIG. 14A to 14D are SEM photographs showing the results of observing a sample of a comparative example manufactured by a conventional arc flash discharge vapor deposition apparatus with a scanning electron microscope JSM-7001F manufactured by JEOL Ltd.

8A and 8B, some of the carbon particles could be identified, but a clear image could not be obtained. The reason for this is thought to be that the diameter of the carbon particles is small and that the observation of the carbon particles is difficult due to the resolution of the scanning electron microscope.

9A to 12B, it can be seen that carbon particles having a diameter of about 3 to 30 nm exist at intervals of about 10 to 100 nm.

In general, fine particles of nanometer order have a strong cohesive force of the fine particles, and it is difficult for them to exist independently. In the deposition apparatus 200, fine particles (carbon particles) are deposited while being accelerated on the silicon wafer by the electrode unit 30, and the fine particles (carbon particles) are ionized with the same polarity, And is deposited on the silicon wafer while repelling. As a result, as shown in Figs. 9A to 12B, it is considered that the fine particles (carbon particles) are not agglomerated and deposited on the silicon wafer while maintaining a certain distance.

8A and 8B, the sample of this embodiment can also be observed in a scanning electron microscope without occurrence of charge up. In this way, it is considered that the carbon particles are electrically connected by the tunnel effect because the charge-up does not occur even though the carbon particles exist at a distance from the point.

This phenomenon is an effect obtained by solving the problem that the carbon particles of the conventional sample are agglomerated by van der Waals force or the like, and the carbon particles are uniformly generated.

9B, 10B, and 11B, a lattice pattern reflecting the crystal of carbon particles was observed. From this, it can be seen that the carbon particles of the sample of this example have crystallinity.

The fact that the respective carbon particles are electrically connected by the tunnel effect obtained from the results observed by the scanning electron microscope shown in Figs. 8A and 8B and the results observed by the transmission electron microscope shown in Figs. 9A to 11B It is considered that the carbon particles of the sample of this embodiment have a graphene structure.

On the other hand, in the results of the sample observation of the conventional example manufactured by the arc discharge method shown in Figs. 13A to 13D, it was not possible to confirm the particle shape sample. The sample of the conventional example is colored brown, and the thickness of the deposited film is about 10 nm. Therefore, the conventional sample is considered to be amorphous (so-called amorphous) sediments. The amorphous carbon film is characterized in that its electrical conductivity is very low compared to the conductivity of the graphene structure. When it is desired to prevent charge-up in a scanning electron microscope or the like, it is necessary to stick a film thick enough to the conventional arc method.

14A to 14D, carbon particles of about 30 to 50 nm can be confirmed, and a portion where carbon particles are aggregated can be confirmed. In the SEM photograph of the observation magnification of 200,000 times shown in Fig. 14D, the image was not clear due to charge-up, and the electric conductivity of the carbon particles was not so high by the arc flash method.

As described above, it can be seen from the present embodiment that the material particles can be deposited without aggregation in the deposition apparatus according to the present invention.

The present invention includes substantially the same configuration as the configuration described in the embodiment (for example, a configuration in which functions, methods, and results are the same or a configuration in which the objects and effects are the same). Furthermore, the present invention includes a configuration in which a non-essential portion of the configuration described in the embodiments is replaced. Furthermore, the present invention includes a configuration that achieves the same operational effects as the configuration described in the embodiment, or a configuration that can achieve the same purpose. Further, the present invention includes a configuration in which known technology is added to the configuration described in the embodiments.

2: chamber 2a: reaction chamber
2b: sample chamber 4: valve
8: window part 10: material particle supply part
12: retainer 13: support
14: temperature control unit 20: ionization unit
30: electrode part 32: electron collecting electrode
34: Material particle collecting electrode 40: Mass filter unit
100: deposition apparatus 200: deposition apparatus
210: first electrode 212: second electrode
214: Support part 300: Deposition device
310: Material particle feed pipe 400: Deposition device
410: magnetic field generator 500: deposition device
510: Neutralization unit

Claims (13)

1. A deposition apparatus for depositing material particles,
An ionization unit for ionizing the material particles by a photoelectric effect in a reaction chamber to which the material particles are supplied,
And an electrode part for guiding the ionized material particles to a region determined by the Coulomb force. The method according to claim 1,
Wherein the ionization section irradiates an electromagnetic wave to ionize the material particles. 3. The method according to claim 1 or 2,
And a material particle supply part for supplying the material particles to the reaction chamber. The method of claim 3,
Wherein the material particle supply unit has a first electrode and a second electrode and generates a discharge between the first electrode and the second electrode to supply the material particles. The method of claim 3,
Wherein the material particle supply part supplies the material particles by irradiating electromagnetic waves to vaporize the material. The method of claim 3,
Wherein the material particle supplying section supplies a fluid including the material particles. 7. The method according to any one of claims 1 to 6,
And a temperature control unit for controlling the temperature of the material particles. 8. The method according to any one of claims 1 to 7,
And a magnetic field generator for generating a magnetic field in a path of the ionized material particles. 9. The method according to any one of claims 1 to 8,
And a mass filter portion for selecting the ionized material particles in accordance with a mass. 10. The method according to any one of claims 1 to 9,
And a valve disposed between the reaction chamber and a sample chamber in which the ionized material particles are deposited. 11. The method according to any one of claims 1 to 10,
Wherein the electrode portion has an electron collecting electrode for collecting electrons emitted from the material particles by a photoelectric effect and a material particle collecting electrode for collecting the ionized material particles. 12. The method of claim 11,
And a neutralizing unit for supplying charged particles to the material particles deposited on the material particle collecting electrode to neutralize the material particles on the material particle collecting electrode. As a deposition method for depositing material particles,
Supplying the material particles to a reaction chamber,
A step of ionizing the material particles supplied to the reaction chamber by a photoelectric effect,
And causing the ionized material particles to be induced and deposited in a region determined by the Coulomb force.
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