KR20140148098A - Light emitting diode chip - Google Patents

Light emitting diode chip Download PDF

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Publication number
KR20140148098A
KR20140148098A KR1020130071583A KR20130071583A KR20140148098A KR 20140148098 A KR20140148098 A KR 20140148098A KR 1020130071583 A KR1020130071583 A KR 1020130071583A KR 20130071583 A KR20130071583 A KR 20130071583A KR 20140148098 A KR20140148098 A KR 20140148098A
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South Korea
Prior art keywords
pattern
protruding
side surface
side
semiconductor layer
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KR1020130071583A
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Korean (ko)
Inventor
김예슬
김경완
류용우
이진웅
임형진
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서울바이오시스 주식회사
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Priority to KR1020130071583A priority Critical patent/KR20140148098A/en
Publication of KR20140148098A publication Critical patent/KR20140148098A/en

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22Roughened surfaces, e.g. at the interface between epitaxial layers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

Abstract

A light emitting diode chip capable of improving light efficiency is disclosed.
The light emitting diode chip of the present invention includes: a substrate; A semiconductor stacked portion including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer formed on the substrate; And the semiconductor laminated portion includes first and second side surfaces, the first side surface is defined as an outer surface of the semiconductor laminate portion, the second side surface is defined as an outer surface of the first conductive type semiconductor layer, At least one of the first and second sides has a protruding pattern. Therefore, the present invention can improve lateral light extraction of the light emitting diode chip by the protruding pattern.

Description

[0001] LIGHT EMITTING DIODE CHIP [0002]

The present invention relates to a light emitting diode chip, and more particularly, to a light emitting diode chip capable of improving light efficiency.

A typical light emitting diode chip has a semiconductor laminate formed on a substrate such as sapphire, and an electrode is formed on the semiconductor laminate. In order to solve the problem that light emitted from the active layer is totally reflected and lost in the semiconductor stacked portion, a general LED chip has been proposed in which a concavo-convex pattern or the like is formed on a substrate. However, .

SUMMARY OF THE INVENTION It is an object of the present invention to provide a light emitting diode chip capable of improving light efficiency.

A light emitting diode chip according to an embodiment of the present invention includes a substrate; A semiconductor stacked portion including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer formed on the substrate; And the semiconductor laminated portion includes first and second side surfaces, the first side surface is defined as an outer surface of the semiconductor laminate portion, the second side surface is defined as an outer surface of the first conductive type semiconductor layer, At least one of the first and second sides has a protruding pattern. Therefore, the present invention can improve lateral light extraction of the light emitting diode chip by the protruding pattern.

At least one of the first and second sides may further include a planar pattern, and the planar pattern and the protruding pattern may be alternated.

The first and second sides may further include a planar pattern, and the planar pattern and the protruding pattern may be alternated.

At least one of the first and second sides includes a micropattern, and the micropattern and the protruding pattern may be alternated.

The protruding pattern may be alternated with at least two of protruding round patterns, protruding triangular patterns, and protruding rectangular patterns.

The at least one of the first and second side surfaces may further include a concave pattern, and the protrusion pattern and the concave pattern may be alternated.

The first and second side surfaces have a constant inclination angle.

The conductive semiconductor layer may further include a third side surface formed on the second side surface.

Wherein the protruding pattern comprises: a first protruding pattern located on the first side; A second protruding pattern located on the second side; And a third projecting pattern located on the third side.

Wherein the first side surface includes a first planar pattern alternating with the first projecting pattern and the second side includes a second planar pattern alternating with the second projecting pattern, And a third planar pattern alternating with the protruding pattern.

And a transparent electrode layer on the second conductive semiconductor layer, wherein an outer surface of the transparent electrode layer is included in the first side surface.

The first side is a region where the transparent electrode layer and the semiconductor laminated portion are etched by a mesa process.

The shape of the first side surface has a shape corresponding to the edge of the mask used in the mesa process.

And the second side is an etched region of the first conductive semiconductor layer by a unit cell separation process.

The shape of the second side has a shape corresponding to the edge of the mask used in the unit cell separation process.

According to embodiments of the present invention, the light emitting diode chip may include at least one of a mesa-etched transparent electrode layer and a first side of the semiconductor laminate portion and a second side of the first conductivity type semiconductor layer etched by the unit cell- The protruding pattern is formed to reduce the light totally reflected from the side surface of the light emitting diode chip.

In addition, the present invention is characterized in that at least one of the first and second side surfaces is formed with a protruding pattern and a planar pattern alternately, or alternatively, a protruding pattern and a concave pattern are alternately formed, The protruding pattern and the triangular pattern are alternately formed, and the light extraction is advantageous.

Accordingly, the present invention improves the light extraction efficiency of the light emitting diode chip by improving the lateral light extraction of the light emitting diode chip by the structures of the first and second aspects.

1 is a plan view schematically showing a light emitting diode chip according to a first embodiment of the present invention.
2 is a cross-sectional view illustrating a light emitting diode chip taken along the line I-I 'of FIG.
3 is a plan view schematically showing a light emitting diode chip according to a second embodiment of the present invention.
4 is a cross-sectional view illustrating a light emitting diode chip taken along the line I-I 'of FIG.
5 is a plan view schematically showing a light emitting diode chip according to a third embodiment of the present invention.
6 is a cross-sectional view illustrating a light emitting diode chip taken along a line I-I 'in FIG.
7 is a plan view schematically illustrating a light emitting diode chip according to a fourth embodiment of the present invention.
8 is a cross-sectional view illustrating a light emitting diode chip cut along a line I-I 'in FIG.
9 to 11 are views showing a light emitting diode chip according to still another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the width, length, thickness, and the like of the components may be exaggerated for convenience. Like reference numerals designate like elements throughout the specification.

FIG. 1 is a plan view schematically illustrating a light emitting diode chip according to a first embodiment of the present invention, and FIG. 2 is a cross-sectional view illustrating a light emitting diode chip cut along the line I-I 'of FIG.

1 and 2, a light emitting diode chip 100 according to a first embodiment of the present invention includes a substrate 110, a semiconductor stacked portion, a transparent electrode layer 150, a first electrode 180, (Not shown).

The substrate 110 may be a growth substrate for growing a gallium nitride compound semiconductor layer such as a sapphire substrate, a spinel substrate, a gallium nitride substrate, a silicon carbide substrate, or a silicon substrate, but is not limited thereto.

The substrate 110 includes an uneven pattern 111 on its upper surface. The concavo-convex pattern 111 has a function of improving light efficiency. The concavo-convex pattern 111 refracts light traveling to the surface of the substrate 110 to the outside. The concavo-convex pattern 111 is formed into a protruded stripe-shaped semi-cylindrical shape.

The concavo-convex pattern 111 is limited to a stripe-type semi-cylindrical shape, but is not limited to this, and may be an island-type hemisphere shape or a polygonal shape.

The semiconductor laminated portion includes a first conductive semiconductor layer 120, an active layer 130, and a second conductive semiconductor layer 140.

The active layer 130 is disposed between the first conductive semiconductor layer 120 and the second conductive semiconductor layer 140 and may have a single quantum well structure or a multiple quantum well structure. The compositional element and the composition ratio are determined so that the active layer 130 emits light of a desired wavelength, for example, ultraviolet light or visible light.

The first conductive semiconductor layer 120 may include n-type GaN, and the second conductive semiconductor layer 140 may include p-type GaN. Here, the n-type and the p-type may be reversed. The first and second conductivity type semiconductor layers 120 and 140 may be formed as a single layer or a multi-layer structure.

The active layer 130 and the first and second conductivity type semiconductor layers 120 and 140 may be formed using MOCVD or MBE techniques.

The transparent electrode layer 150 is formed on the second conductive semiconductor layer 140. The transparent electrode layer 150 may be formed of a transparent oxide such as ITO, ZnO, FTO, AZO, or GZO, or may be formed of Graphene, CNT, Ni / Au or the like and is ohmically contacted with the second conductive semiconductor layer 140. Although not shown in the drawing, a current blocking layer (not shown) may be formed between the transparent electrode layer 150 and the second conductive semiconductor layer 140. The current blocking layer has a function of improving current dispersion between the transparent electrode layer 150 and the second conductive type semiconductor layer 140.

The light emitting diode chip 100 may include the transparent conductive layer 150, the second conductive semiconductor layer 140 and the active layer 130 by a mesa etching process to form the first conductive semiconductor layer 120, A portion of the first conductive semiconductor layer 120 is etched to expose the first conductive semiconductor layer 120. The transparent electrode layer 150 and the outer surface of the semiconductor laminated portion are defined as a first side surface 170 and a protrusion pattern for improving lateral light extraction of the LED chip 100 is formed on the first side surface 170 173 and a planar pattern 171 are formed.

The protruding patterns 173 and the planar patterns 171 are alternately formed along the first side surfaces 170 and the protruding patterns 173 have protruding round shapes. The protrusion pattern 173 and the planar pattern 171 may be formed during a mask process using a photoresist. That is, the outer surface of the mask (not shown) has the same shape as the protruding pattern 173 and the planar pattern 171.

The light emitting diode chip 100 is separated into unit cells on the substrate 110 and separated into unit cells through a scribing process so that one LED chip 100 is manufactured as shown in FIG. 1 and FIG. do.

Here, the light emitting diode chip 100 is divided into unit cells to expose the upper surface of the substrate 110 by etching the first conductive semiconductor layer 120 on the substrate 110, have.

The outer surface of the first conductivity type semiconductor layer 120 separated from the unit cell is defined as a second side surface 160 and the second side surface 160 has a planar structure.

The light emitting diode chip 100 according to the first embodiment of the present invention has the protrusion pattern 173 and the planar pattern 171 on the mesa-etched transparent electrode layer 150 and the first side surface 170 of the semiconductor laminate portion The light is totally reflected from the side surface of the LED chip 100, and the light extraction is advantageous.

FIG. 3 is a plan view schematically illustrating a light emitting diode chip according to a second embodiment of the present invention, and FIG. 4 is a cross-sectional view illustrating a light emitting diode chip taken along the line I-I 'of FIG.

3 and 4, the light emitting diode chip 200 according to the second embodiment of the present invention includes all the configurations except for the second side surface 260, the light emitting diode chip 200 according to the first embodiment of the present invention, (100 in Fig. 1), and therefore, the same reference numerals are used and detailed description thereof will be omitted.

The first side surface 170 includes a first protruding pattern 173 and a first planar pattern 171 and the first protruding pattern 173 and the first planar pattern 171 include the first side surface 170 As shown in FIG.

The second side surface 260 is defined as an outer surface of the first conductive semiconductor layer 120 and the second side surface 260 includes a second protruding pattern 263 and a second planar pattern 261 The second protrusion pattern 263 and the second planar pattern 261 are alternately formed along the second side surface 260. [ The second projecting pattern 263 and the second planar pattern 261 have a function of improving lateral light extraction of the light emitting diode chip 200. The second protrusion pattern 263 has a protruded round shape. The second protrusion pattern 263 and the second planar pattern 261 may be formed during a mask process using a photoresist. That is, the outer surface of the mask (not shown) has the same shape as the second protruding pattern 263 and the second planar pattern 261. The second protruding pattern 263 and the second planar pattern 261 are formed through a process of separating into a unit cell.

The light emitting diode chip 200 according to the second embodiment of the present invention has the mesa-etched transparent electrode layer 150 and the first protrusion pattern 173 on the first side surface 170 of the semiconductor laminate portion, The second protruding pattern 263 and the second planar pattern 261 are formed on the second side surface 260 of the first conductive semiconductor layer 120 etched through the unit cell separation process. So that light extracted from the side surface of the light emitting diode chip 200 is reduced and light extraction is advantageous.

FIG. 5 is a plan view schematically showing a light emitting diode chip according to a third embodiment of the present invention, and FIG. 6 is a cross-sectional view illustrating a light emitting diode chip taken along the line I-I 'of FIG.

5 and 6, the LED chip 300 according to the third embodiment of the present invention has all the configurations except for the second and third sides 260 and 360 in the first embodiment of the present invention (100 in FIG. 1) according to the present invention, and therefore, the same reference numerals are used and detailed description thereof will be omitted.

The first side surface 170 includes a first protruding pattern 173 and a first planar pattern 171 and the first protruding pattern 173 and the first planar pattern 171 include the first side surface 170 As shown in FIG.

The second side surface 260 is defined as an outer surface of the first conductive semiconductor layer 120 and the second side surface 260 includes a second protruding pattern 263 and a second planar pattern 261 The second protrusion pattern 263 and the second planar pattern 261 are alternately formed along the second side surface 260. [ The second protruding pattern 263 and the second planar pattern 261 have a function of improving lateral light extraction of the light emitting diode chip 300. The second protrusion pattern 263 has a protruded round shape.

The third side surface 360 is defined as an outer surface of the first conductive semiconductor layer 120 and is located on the second side surface 260. The third side surface 360 includes a third protruding pattern 363 and a third planar pattern 361 and the third protruding pattern 363 and the third planar pattern 361 include the third side surface 360, respectively. The third protruding pattern 363 and the third planar pattern 361 have a function of improving lateral light extraction of the light emitting diode chip 300. The third protrusion pattern 363 has a protruded round shape.

The second protrusion pattern 263 and the second planar pattern 261 and the third protrusion pattern 363 and the third planar pattern 361 may be formed during a mask process using a photoresist. That is, the outer surface of the mask (not shown) has the same shape as the second protruding pattern 263 and the second planar pattern 261 and the third protruding pattern 363 and the third planar pattern 361 . The second protruding pattern 263 and the second planar pattern 261 and the third protruding pattern 363 and the third planar pattern 361 are formed through a process of separating into a unit cell. Here, the second protrusion pattern 263 and the second plan pattern 261, the third protrusion pattern 363, and the third plan pattern 361 may be formed through a single mask process. That is, the second protruding pattern 263 and the second planar pattern 261, and the third protruding pattern 363 and the third planar pattern 361 may be formed using a diffraction mask or a halftone mask .

The light emitting diode chip 300 according to the third embodiment of the present invention has the mesa-etched transparent electrode layer 150 and the first protruding pattern 173 and the second protruding pattern 170 on the first side surface 170 of the semiconductor stacked portion. The second protrusion pattern 263 and the second plan pattern 261 are formed on the second side surface 260 of the first conductivity type semiconductor layer 120 etched through the unit cell separation process, And the third protruding pattern 363 and the third planar pattern 361 are alternately formed on the third side surface 360 to reduce the total reflection on the side surface of the LED chip 300, Respectively.

FIG. 7 is a plan view schematically illustrating a light emitting diode chip according to a fourth embodiment of the present invention, and FIG. 8 is a cross-sectional view illustrating a light emitting diode chip taken along the line I-I 'of FIG.

7 and 8, the LED chip 400 according to the fourth embodiment of the present invention has all the configurations except for the first and second sides 470 and 460 in the second embodiment of the present invention (200 in FIG. 3) according to the first embodiment of the present invention, and therefore, the same reference numerals are given to the same, and a detailed description thereof will be omitted.

The first side surface 470 includes a first protruding pattern 473 and a first planar pattern 471 and the first protruding pattern 473 and the first planar pattern 471 are formed on the first side surface 470). The first side surface 470 has a constant inclination angle.

The second side surface 460 includes a second protruding pattern 463 and a second planar pattern 461 and the second protruding pattern 463 and the second planar pattern 461 include the second side surface 461, 460). The second side surface 460 has a constant inclination angle.

The light emitting diode chip 400 according to the fourth embodiment of the present invention includes a mesa-etched transparent electrode layer 150 and a first protruding pattern 473 and a first planar pattern 471 on the first side surface 470 of the semiconductor stacked portion. The second protrusion pattern 463 and the second plan pattern 461 are alternately formed on the second side surface 460 of the first conductive type semiconductor layer 120 etched through the unit cell separation process And the first and second side surfaces 470 and 460 may include a predetermined inclination angle to further improve lateral light extraction of the LED chip 400. [

9 to 11 are views showing a light emitting diode chip according to still another embodiment of the present invention.

9, the first side 570 of the transparent electrode layer and the semiconductor laminated portion includes a first protrusion pattern 573 and a first concave pattern 571, and a first conductive type The second side surface 560 of the semiconductor layer includes a second projecting pattern 563 and a second concave pattern 561.

The first and second protruding patterns 573 and 563 have protruding round shapes, and the first and second concave patterns 571 and 561 have a groove shape. That is, the first and second sides 570 and 560 have a wave pattern.

The first and second sides 570 and 560 can improve lateral light extraction of the light emitting diode chip by the wave pattern.

However, the present invention is not limited thereto and may be applied to any one of the first and second side surfaces 570 and 560, and may be formed only on one of the first and second side surfaces 570 and 560. However, .

10, the first side 670 of the transparent electrode layer and the semiconductor stacked portion includes a first protrusion pattern 673 and a first micro lens pattern 671, Type semiconductor layer includes a second protruding pattern 663 and a second micro lens pattern 661. The second protruding pattern 663 includes a first protrusion pattern 663 and a second protrusion pattern 663,

The first and second sides 670 and 660 are formed by the first protrusion pattern 673 and the first micro lens pattern 671 and the second protrusion pattern 663 and the second micro lens pattern 661 Side light extraction of the diode chip can be improved.

The first protrusion pattern 673 and the first micro lens pattern 671 and the second protrusion pattern 663 and the second micro lens pattern 661 are formed on the first and second sides 670 and 660 However, the present invention is not limited thereto, and may be formed only on one of the first and second side surfaces 670 and 660.

Referring to FIG. 11, the first side 770 of the transparent electrode layer and the semiconductor laminated portion includes first and second protruding patterns 773 and 771, and the first conductive semiconductor layer The second side surface 760 includes third and fourth protrusion patterns 763, 761.

The first and third protruding patterns 773 and 763 have protruding round shapes and the second and fourth protruding patterns 771 and 761 have protruding triangular shapes.

The first and second side surfaces 770 and 760 can improve lateral light extraction of the light emitting diode chip by the first and second protruding patterns 773 and 771 and the third and fourth protruding patterns 763 and 761 .

The first and second protrusion patterns 773 and 771 and the third and fourth protrusion patterns 763 and 761 define a structure formed on the first and second sides 770 and 760, However, the present invention is not limited thereto, and it may be formed only on one of the first and second side surfaces 770 and 760. In the present invention, the shape of the protruding pattern is limited to a round shape or a triangular shape. However, the shape of the protruding pattern is not particularly limited, and may be variously changed into a polygonal shape if it has a function for light extraction.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments or constructions. Various changes and modifications may be made without departing from the spirit and scope of the invention. have.

170, 470, 570, 670, 770:
160, 260, 460, 560, 660, 760:
360: Third aspect
171, 471: first plane pattern
261, 461: a second plane pattern
173, 473, 573, 673, 773: first protrusion pattern
263, 463, 563, 663, 771: the second protruding pattern
773: Third protrusion pattern 771: Fourth protrusion pattern

Claims (15)

  1. Board;
    A semiconductor stacked portion including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer formed on the substrate; And
    Wherein the semiconductor laminated portion includes first and second side surfaces,
    Wherein the first side surface is defined as an outer surface of the semiconductor laminate portion, the second side surface is defined as an outer surface of the first conductive type semiconductor layer,
    Wherein at least one of the first and second sides has a protruding pattern.
  2. The method according to claim 1,
    Wherein at least one of the first and second sides further includes a planar pattern, and the planar pattern and the protruding pattern are alternated.
  3. The method according to claim 1,
    Wherein the first and second side surfaces further include a planar pattern, wherein the planar pattern and the protruding pattern are alternated.
  4. The method according to claim 1,
    Wherein at least one of the first and second sides includes a micropattern, and the micropattern and the protruding pattern are alternated.
  5. The method according to claim 1,
    Wherein at least two of the protruding pattern, the protruding round pattern, the protruding triangular pattern, and the protruded square pattern are alternated.
  6. The method according to claim 1,
    Wherein at least one of the first and second side surfaces further includes a concave pattern, wherein the protrusion pattern and the concave pattern are alternated.
  7. The method according to claim 1,
    Wherein the first and second side surfaces have a constant inclination angle.
  8. The method according to claim 1,
    And the third side surface formed on the second side surface on the outer surface of the conductive type semiconductor layer.
  9. [Claim 8] The method according to claim 7,
    A first protruding pattern located on the first side;
    A second protruding pattern located on the second side; And
    And a third protruding pattern located on the third side.
  10. The method of claim 9,
    Wherein the first side surface includes a first planar pattern alternating with the first projecting pattern and the second side includes a second planar pattern alternating with the second projecting pattern, And a third planar pattern alternating with the protruding pattern.
  11. The method according to claim 1,
    The light emitting diode chip according to claim 1, further comprising a transparent electrode layer on the second conductive type semiconductor layer, wherein an outer side surface of the transparent electrode layer is included in the first side surface.
  12. The method of claim 11,
    Wherein the first side surface is an etched region of the transparent electrode layer and the semiconductor laminated portion by a mesa process.
  13. The method of claim 12,
    Wherein the shape of the first side face has a shape corresponding to an edge of the mask used in the mesa process.
  14. The method according to claim 1,
    And the second side is an etched region of the first conductive semiconductor layer by a unit cell separation process.
  15. 14. The method of claim 13,
    And the shape of the second side has a shape corresponding to an edge of the mask used in the unit cell separation step.
KR1020130071583A 2013-06-21 2013-06-21 Light emitting diode chip KR20140148098A (en)

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TW103120945A TWI624080B (en) 2013-06-21 2014-06-18 Light emitting diode chip
PCT/KR2014/005482 WO2014204271A1 (en) 2013-06-21 2014-06-20 Light emitting diode chip

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