KR20130079873A - 발광소자 및 이를 포함하는 조명시스템 - Google Patents

발광소자 및 이를 포함하는 조명시스템 Download PDF

Info

Publication number
KR20130079873A
KR20130079873A KR20120000622A KR20120000622A KR20130079873A KR 20130079873 A KR20130079873 A KR 20130079873A KR 20120000622 A KR20120000622 A KR 20120000622A KR 20120000622 A KR20120000622 A KR 20120000622A KR 20130079873 A KR20130079873 A KR 20130079873A
Authority
KR
South Korea
Prior art keywords
semiconductor layer
light emitting
layer
emitting device
nitride semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR20120000622A
Other languages
English (en)
Korean (ko)
Inventor
정종필
황정현
김종국
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR20120000622A priority Critical patent/KR20130079873A/ko
Priority to TW101150516A priority patent/TWI596798B/zh
Priority to JP2012287333A priority patent/JP6087142B2/ja
Priority to CN201210593041.7A priority patent/CN103187496B/zh
Priority to US13/732,694 priority patent/US9018652B2/en
Priority to EP13150060.5A priority patent/EP2613368B1/en
Publication of KR20130079873A publication Critical patent/KR20130079873A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • A—HUMAN NECESSITIES
    • A62—LIFE-SAVING; FIRE-FIGHTING
    • A62B—DEVICES, APPARATUS OR METHODS FOR LIFE-SAVING
    • A62B5/00—Other devices for rescuing from fire
    • E—FIXED CONSTRUCTIONS
    • E04—BUILDING
    • E04F—FINISHING WORK ON BUILDINGS, e.g. STAIRS, FLOORS
    • E04F19/00—Other details of constructional parts for finishing work on buildings
    • E04F19/08—Built-in cupboards; Masks of niches; Covers of holes enabling access to installations
    • E—FIXED CONSTRUCTIONS
    • E06—DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
    • E06C—LADDERS
    • E06C9/00—Ladders characterised by being permanently attached to fixed structures, e.g. fire escapes
    • E06C9/02—Ladders characterised by being permanently attached to fixed structures, e.g. fire escapes rigidly mounted
    • E—FIXED CONSTRUCTIONS
    • E06—DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
    • E06C—LADDERS
    • E06C9/00—Ladders characterised by being permanently attached to fixed structures, e.g. fire escapes
    • E06C9/06—Ladders characterised by being permanently attached to fixed structures, e.g. fire escapes movably mounted
    • E06C9/08—Ladders characterised by being permanently attached to fixed structures, e.g. fire escapes movably mounted with rigid longitudinal members
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Mechanical Engineering (AREA)
  • Civil Engineering (AREA)
  • Structural Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Business, Economics & Management (AREA)
  • Emergency Management (AREA)
  • Led Devices (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Led Device Packages (AREA)
KR20120000622A 2012-01-03 2012-01-03 발광소자 및 이를 포함하는 조명시스템 Ceased KR20130079873A (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR20120000622A KR20130079873A (ko) 2012-01-03 2012-01-03 발광소자 및 이를 포함하는 조명시스템
TW101150516A TWI596798B (zh) 2012-01-03 2012-12-27 發光裝置
JP2012287333A JP6087142B2 (ja) 2012-01-03 2012-12-28 発光素子
CN201210593041.7A CN103187496B (zh) 2012-01-03 2012-12-31 发光器件
US13/732,694 US9018652B2 (en) 2012-01-03 2013-01-02 Light emitting device
EP13150060.5A EP2613368B1 (en) 2012-01-03 2013-01-02 Light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR20120000622A KR20130079873A (ko) 2012-01-03 2012-01-03 발광소자 및 이를 포함하는 조명시스템

Publications (1)

Publication Number Publication Date
KR20130079873A true KR20130079873A (ko) 2013-07-11

Family

ID=47428533

Family Applications (1)

Application Number Title Priority Date Filing Date
KR20120000622A Ceased KR20130079873A (ko) 2012-01-03 2012-01-03 발광소자 및 이를 포함하는 조명시스템

Country Status (6)

Country Link
US (1) US9018652B2 (https=)
EP (1) EP2613368B1 (https=)
JP (1) JP6087142B2 (https=)
KR (1) KR20130079873A (https=)
CN (1) CN103187496B (https=)
TW (1) TWI596798B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI758603B (zh) * 2014-07-03 2022-03-21 晶元光電股份有限公司 光電元件及其製造方法
CN105224120B (zh) * 2014-07-03 2018-07-31 宸鸿科技(厦门)有限公司 基板结构
TWI759602B (zh) * 2019-05-24 2022-04-01 晶元光電股份有限公司 半導體元件

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09116192A (ja) * 1995-10-16 1997-05-02 Toshiba Corp 発光ダイオード
CN100446289C (zh) * 1998-03-12 2008-12-24 日亚化学工业株式会社 氮化物半导体元件
JP4356555B2 (ja) * 1998-03-12 2009-11-04 日亜化学工業株式会社 窒化物半導体素子
KR100589621B1 (ko) * 1998-03-12 2006-06-19 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자
JP3804335B2 (ja) * 1998-11-26 2006-08-02 ソニー株式会社 半導体レーザ
WO2002084829A1 (en) * 2001-04-11 2002-10-24 Cielo Communications, Inc. Long wavelength vertical cavity surface emitting laser
US7692182B2 (en) * 2001-05-30 2010-04-06 Cree, Inc. Group III nitride based quantum well light emitting device structures with an indium containing capping structure
TW493287B (en) * 2001-05-30 2002-07-01 Epistar Corp Light emitting diode structure with non-conductive substrate
JP2003168822A (ja) * 2001-11-30 2003-06-13 Shin Etsu Handotai Co Ltd 発光素子及びその製造方法
JP4254373B2 (ja) * 2003-06-24 2009-04-15 日亜化学工業株式会社 窒化物半導体素子
US7751455B2 (en) * 2004-12-14 2010-07-06 Palo Alto Research Center Incorporated Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure
JP2007096116A (ja) * 2005-09-29 2007-04-12 Toyoda Gosei Co Ltd 発光素子
JP2007134388A (ja) * 2005-11-08 2007-05-31 Sharp Corp 窒化物系半導体素子とその製造方法
JP2007220973A (ja) * 2006-02-17 2007-08-30 Showa Denko Kk 半導体発光素子及びその製造方法、並びにランプ
US20070228385A1 (en) * 2006-04-03 2007-10-04 General Electric Company Edge-emitting light emitting diodes and methods of making the same
TW200812113A (en) * 2006-05-23 2008-03-01 Alps Electric Co Ltd Semiconductor light emitting element and method for manufacturing the same
EP1883141B1 (de) * 2006-07-27 2017-05-24 OSRAM Opto Semiconductors GmbH LD oder LED mit Übergitter-Mantelschicht
US8158990B2 (en) * 2006-10-05 2012-04-17 Mitsubishi Chemical Corporation Light emitting device using GaN LED chip
US20080277682A1 (en) * 2007-03-29 2008-11-13 The Regents Of The University Of California Dual surface-roughened n-face high-brightness led
JP2009038239A (ja) * 2007-08-02 2009-02-19 Toshiba Corp 光半導体装置
JP5164641B2 (ja) * 2008-04-02 2013-03-21 Ｄｏｗａエレクトロニクス株式会社 電流狭窄型半導体発光素子の製造方法
KR101072200B1 (ko) * 2009-03-16 2011-10-10 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR101028286B1 (ko) * 2009-12-28 2011-04-11 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
JP5994420B2 (ja) * 2012-06-21 2016-09-21 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子およびその製造方法
US20140097442A1 (en) * 2012-10-09 2014-04-10 Industrial Technology Research Institute Nitride semiconductor device

Also Published As

Publication number Publication date
TW201340386A (zh) 2013-10-01
EP2613368A3 (en) 2016-02-17
US20130168711A1 (en) 2013-07-04
JP6087142B2 (ja) 2017-03-01
JP2013140983A (ja) 2013-07-18
TWI596798B (zh) 2017-08-21
EP2613368B1 (en) 2020-05-06
CN103187496A (zh) 2013-07-03
EP2613368A2 (en) 2013-07-10
CN103187496B (zh) 2017-05-31
US9018652B2 (en) 2015-04-28

Similar Documents

Publication Publication Date Title
EP2482343A2 (en) Light emitting diode
KR101894025B1 (ko) 발광소자
KR20130019279A (ko) 발광소자
KR101865936B1 (ko) 발광소자
KR20120138275A (ko) 발광소자
KR20130007318A (ko) 발광소자
KR101798238B1 (ko) 발광소자
JP6087142B2 (ja) 発光素子
KR102163961B1 (ko) 발광소자 및 조명시스템
KR20140062944A (ko) 발광소자
KR20130019275A (ko) 발광소자
KR101886153B1 (ko) 발광소자
KR101904034B1 (ko) 발광소자 및 이를 포함하는 조명시스템
KR101823687B1 (ko) 발광소자
KR101786084B1 (ko) 발광소자의 제조방법
KR20130076335A (ko) 발광소자
KR101871498B1 (ko) 발광소자
KR101829798B1 (ko) 발광소자
KR101814052B1 (ko) 발광소자
KR102181482B1 (ko) 발광소자 및 조명시스템
KR102057719B1 (ko) 발광소자 및 이를 포함하는 조명시스템
KR101969336B1 (ko) 발광소자
KR20130079867A (ko) 발광소자
KR20130080298A (ko) 발광소자
KR20130074072A (ko) 발광소자 패키지

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20120103

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20161230

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 20120103

Comment text: Patent Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20171215

Patent event code: PE09021S01D

E90F Notification of reason for final refusal
PE0902 Notice of grounds for rejection

Comment text: Final Notice of Reason for Refusal

Patent event date: 20180627

Patent event code: PE09021S02D

E601 Decision to refuse application
E801 Decision on dismissal of amendment
PE0601 Decision on rejection of patent

Patent event date: 20181226

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20180627

Comment text: Final Notice of Reason for Refusal

Patent event code: PE06011S02I

Patent event date: 20171215

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

PE0801 Dismissal of amendment

Patent event code: PE08012E01D

Comment text: Decision on Dismissal of Amendment

Patent event date: 20181226

Patent event code: PE08011R01I

Comment text: Amendment to Specification, etc.

Patent event date: 20180823

Patent event code: PE08011R01I

Comment text: Amendment to Specification, etc.

Patent event date: 20180214

Patent event code: PE08011R01I

Comment text: Amendment to Specification, etc.

Patent event date: 20161230