KR20130076442A - Apparatus and method of cutting tape supporting wafer - Google Patents

Apparatus and method of cutting tape supporting wafer Download PDF

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Publication number
KR20130076442A
KR20130076442A KR1020110145033A KR20110145033A KR20130076442A KR 20130076442 A KR20130076442 A KR 20130076442A KR 1020110145033 A KR1020110145033 A KR 1020110145033A KR 20110145033 A KR20110145033 A KR 20110145033A KR 20130076442 A KR20130076442 A KR 20130076442A
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KR
South Korea
Prior art keywords
laser beam
support tape
cutting
tape
illumination light
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KR1020110145033A
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Korean (ko)
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KR101299236B1 (en
Inventor
김환
박상영
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주식회사 이오테크닉스
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Priority to KR1020110145033A priority Critical patent/KR101299236B1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Abstract

The disclosed support tape cutting method includes a virtual plurality of support tapes exposed between a plurality of circuit elements arranged two-dimensionally on the wafer by placing a wafer on which a support tape is attached to a back surface on a stage and stretching the support tape. And forming a cutting line to cut, and irradiating a laser beam to the supporting tape along the plurality of cutting lines to cause an ablation reaction on the surface of the supporting tape to cut the supporting tape.

Description

Apparatus and method of cutting tape supporting wafer}

The present invention relates to a method and apparatus for cutting a support tape for supporting a wafer using a laser.

BACKGROUND OF THE INVENTION A circuit element manufacturing process for forming a plurality of desired circuit elements on a wafer by a series of semiconductor processes is common. After forming the plurality of circuit elements, the wafer is cut to singulate the plurality of circuit elements. In order to support a plurality of circuit elements in this individualization process, a support tape is attached to one surface of the wafer before the individualization process. After the individualization process is completed, the plurality of circuit elements are transferred to the next process, for example, a packaging process, which requires removing the supporting tape before.

The process of removing the support tape may be carried out in such a way that the support tape is expanded, the laser beam is irradiated onto the entire surface of the die to which the tape is attached, then cooled, and the support tape is peeled off. As another method, there may be a method of cutting the support tape along the gap using a cutting blade or the like after stretching the support tape to widen the gap between the plurality of circuit elements. This cutting method is time consuming, inefficient, and may result in edge chipping or warpage when peeling off the support tape. Further, when the support tape is stretched, the arrangement of the circuit elements may be disturbed, so that it is not easy to cut the cutting blade by following the disturbed arrangement, and the yield may be lowered.

It is an object of the present invention to provide an apparatus and method capable of cutting a support tape using a laser beam. SUMMARY OF THE INVENTION An object of the present invention is to provide an apparatus and method capable of improving processing speed and efficiency by cutting a support tape while following the cut line between the plurality of circuit elements after the support tape is stretched.

The support tape cutting method of the present invention for achieving the above object, between the plurality of circuit elements arranged in a two-dimensional array on the wafer by mounting a wafer with a support tape attached to the back on the stage, the stretching the support tape Forming a plurality of virtual cutting lines to which the support tape is exposed; And irradiating a laser beam on the support tape along the plurality of cutting lines to cut the support tape by causing an ablation reaction on the surface of the support tape.

The forming of the plurality of cutting lines may include clamping an edge of the support tape; It may include; pushing the stretching from below the support tape upwards.

The method includes providing illumination light coaxial with the optical axis of the laser beam; Receiving the illumination light to obtain an image of the wafer and the support tape; The method may further include extracting information of the scheduled cutting line from the obtained image. The method may further include acquiring the position of the laser beam and the information of the scheduled cutting line and correcting the irradiation position of the laser beam during the cutting process. The method may further include displaying an image of the wafer and the support tape through a monitor.

The cutting may include moving the stage in at least one of a first direction and a second direction perpendicular to the first direction, and scanning the laser beam in at least one of the first and second directions using a scanner. It can include;

The method can cut the support tape along two or more lines to be cut by scanning with two or more scanners using two or more laser beams.

The method detects the position of the laser beam and the position of the scheduled cutting line by using illumination light irradiated onto the support tape coaxially with the laser beam, and determines the position of the detected laser beam and the scheduled cutting line. And controlling the scanner to scan the stage and the laser beam such that the laser beam is irradiated along the scheduled cutting line based on the position.

The laser beam may be a pulsed laser beam having a wavelength of 150 nm or more and 560 nm or less. The pulse energy density of the laser beam is 10 J / cm 2 or more and 100 J / cm 2 or less, the pulse length is 10 ns or more and 100 ns or less, and the spot size is 5 μm or more and 25 It may be up to μm.

The support tape cutting device for achieving the above object, the support tape is stretched so that a plurality of lines to be cut is formed between a plurality of circuit elements arranged two-dimensional on the wafer, and the first tape is perpendicular to the first direction A stage moved in at least one of two directions; A laser generator for generating a laser beam; And a scanner for moving the laser beam to follow the cutting line, and causing an ablation reaction to the surface of the support tape to cut the support tape.

The apparatus includes a clamper for clamping an edge of the support tape; And extending the support tape by pushing the support tape from below to form a plurality of cutting lines to be exposed to which the support tape is exposed between a plurality of circuit elements arranged two-dimensionally on the wafer. The clamper and the stretching unit may be provided in the stage.

The apparatus comprises an illumination light source for providing illumination light; An optical path synthesizing member for synthesizing the laser beam and the illumination light with the same optical path so as to match the illumination light with the optical axis of the laser beam; A position detector which receives the illumination light and detects positions of the cutting line and the laser beam; And a driver configured to drive the scanner and the stage based on the cutting line to be detected by the position detector and the position information of the laser beam. In order to correct the position of the laser beam, the position detector may acquire the position of the laser beam and the information of the scheduled cutting line in the cutting process. The apparatus may further include a monitor configured to display image information provided from the position detector. The apparatus may further include a beam splitter for dividing the laser beam into two laser beams, and the scanner may include two scanners respectively corresponding to the two or more laser beams.

The laser beam may be a pulsed laser beam having a wavelength of 150 nm or more and 560 nm or less. The pulse energy density of the laser beam is 10 J / cm 2 or more and 100 J / cm 2 or less, the pulse length is 10 ns or more and 100 ns or less, and the spot size is 5 μm or more and 25 It may be up to μm.

According to the above-described support tape cutting device and method of the present invention, the support tape can be cut by following the intervals of a plurality of elements of the elements arranged irregularly by stretching. In addition, it is possible to improve the process efficiency due to the high processing speed. In addition, since the illumination light and the laser beam for processing are coaxially processed, the processing accuracy can be improved and the processing can be monitored in real time.

1 is a block diagram of an embodiment of a support tape cutting device using a laser according to the present invention.
2 is a perspective view illustrating an example of a wafer to which a supporting tape is attached.
3 is a configuration diagram showing an example of an apparatus for stretching a support tape.
FIG. 4 is a configuration diagram showing a state in which the stretching unit is extended to extend the supporting tape in one example of the apparatus for stretching the supporting tape shown in FIG. 3.
5 is a perspective view of one embodiment of a scanner;
Fig. 6 is a plan view showing a state in which gaps between a plurality of circuit elements are opened after the supporting tape is stretched.
7 is a block diagram of one embodiment of an apparatus for controlling a laser beam to follow a line to be cut.
8 is a view for explaining a process of cutting a support tape by the support tape cutting device shown in FIG.
9 is a block diagram of another embodiment of a support tape cutting device using a laser according to the present invention.

Hereinafter, with reference to the accompanying drawings will be described embodiments of the support tape cutting apparatus and method according to the present invention.

1 is a block diagram of a supporting tape cutting device according to an embodiment of the present invention. The support tape cutting device of this embodiment cuts the support tape by causing an ablation reaction by irradiating a laser beam to the support tape.

1, a stage 400 on which an object 1 is placed and a laser generator 100 for generating a laser beam for processing are shown. The stage 400 may be moved to move the object to be processed 1. For example, the stage 400 may be an XY-stage movable in a plane. In addition, the stage 400 may be moved in the optical axis direction, for example, the Z axis direction, so that the laser beam is focused on the object to be processed 1. In addition, the stage 400 may be rotated about the Z axis to match the machining direction.

The object 1 of this embodiment includes a wafer 10 and a support tape 20 attached to the back surface thereof, as shown in FIG. A plurality of circuit elements 11 are formed on the wafer 10 by a series of semiconductor processes. The plurality of circuit elements 11 are in a state of being individualized by a singulation process. For example, the plurality of circuit elements 11 can be individualized by forming a plurality of cutting lines 12 on the wafer 10 through a mechanical dicing process, a laser dicing process, or the like. However, since the plurality of circuit elements 11 are attached to the supporting tape 20, they are kept in a state separated by the plurality of cutting lines 12 without being scattered. The cutting device of this embodiment completely separates the plurality of circuit elements 11 by cutting the support tape 20.

The cutting line 12 is very narrow so that the exposure amount of the support tape 20 is very small or the support tape 20 is barely exposed. Therefore, in order to cut the support tape 20 by irradiating a laser beam, it is necessary to extend the support tape 20 to widen the interval between the plurality of circuit elements 11 (Fig. 6: 13). 3 and 4 show an example of an apparatus for stretching the support tape 20. Referring to FIG. 3, the edge of the support tape 20 is clamped by the clamp 40. The drawing machine 50 is arrange | positioned under the support tape 20, and supports the lower surface of the support tape 20. FIG. The stretching machine 50 is moved up and down by, for example, the actuator 60. As shown in FIG. 4, when the stretching machine 50 is moved upward, the interval 13 between the plurality of circuit elements 11 separated by the cutting lines 12 is extended while the supporting tape 20 is stretched. Widens The support tape 20 is exposed through the gap 13 between the plurality of circuit elements 11, and the laser beam may be irradiated onto the support tape 20 through the gap 13.

The laser generator 100 may generate a pulsed laser beam, for example. The wavelength of the laser beam depends on the material of the supporting tape 20 to be cut, but may be about 560 nm (nanometer) or less, and in particular, may range from 150 nm to 560 nm. Optical parameters such as the pulse energy, pulse length, frequency, and spot size of the laser beam may be sufficient to cause the pulse laser beam to ablate at the surface of the support tape 20 to cut the support tape 20. Can be set. For example, the frequency of the laser pulse may be about 10kHz or more and 150kHz or less, the pulse energy density may be 10J / cm 2 or more and 100J / cm 2 or less, and the pulse length may be 10ns or more and 100ns or less.

The cutting device of this embodiment includes a scanner 200 and a condenser lens 300 for condensing a laser beam on the surface of the object 1, that is, on the surface of the support tape 20. The cutting device may be provided with a plurality of optical members, for example, to guide the laser beam generated by the laser generator 100 to the scanner 200. This is described in more detail later. The cutting device of the present embodiment may further include a beam expanding optical unit 110 for expanding the laser beam incident to the scanner 200. By using the beam expanding optical unit 110 to enlarge the diameter of the collimated laser beam, it is possible to reduce the divergence of the laser beam in the optical path leading to the object 1.

5 is a diagram illustrating in detail an example of the scanner 200. For example, the scanner 200 shown in FIG. 5 is a galvano scanner. 5, the scanner 30 includes an X-galvano mirror unit 210 for scanning the laser beam in the X direction and a Y-galvano mirror unit 220 for scanning the laser beam in the Y direction. can do. The X-galvano mirror unit 210 may include an X-reflective mirror 211 and an X-mirror motor 212 rotating the same. The Y-galvano mirror unit 220 may include a Y-reflective mirror 221 and a Y-mirror motor 222 rotating the same. By such a configuration, the laser beam can be moved in the X and Y directions by rotating the X-reflective mirror 211 and the Y-reflective mirror 221 in the X1, X2, Y1, and Y2 directions as necessary.

The condenser lens 300 is for condensing the scanned laser beam on the surface of the object 1, that is, on the surface of the support tape 20, and the laser beam scanned by the scanner 200 is applied to the object 1. It is preferred to be a telecentric lens in order to be able to enter vertically. Telecentric lenses have a predetermined field. Here, the field refers to a range in which incident light can be emitted in a direction perpendicular to the optical axis. Thus, the scanner 200 preferably scans the laser beam within the field of the telecentric lens (FIG. 5: Sx, Sy). The spot of the laser beam focused on the surface of the object 1 by the condenser lens 300 is preferably circular, but the scope of the present invention is not limited thereto. The spot size may be, for example, 5 µm or more and 25 µm or less.

In the process of extending the support tape 20, the spacing 13 of the plurality of circuit elements 11 on the wafer 10 may be irregular. For example, as shown in FIG. 6, the gap 13 between the plurality of circuit elements 11 may be jagged without being straight in the X direction or the Y direction while the support tape 20 is irregularly stretched. have. In FIG. 6, a plurality of circuit elements 11 are arranged irregularly in the X direction, but this is only an example. In fact, in the case of the circular wafer 1, since the support tape 20 is stretched in all directions, the circuit element 11 can be irregularly stretched in the X direction and the Y direction, so that the gap 13 in the X direction and the Y direction is It is common for not all to be straight. The laser beam must be irradiated to the support tape 20 through this gap 13, which cannot follow the irregular gap 13 by moving the laser beam in a straight line in the X or Y direction. Therefore, a process of detecting the position of the laser beam and controlling the laser beam to follow the gap 13 is necessary.

1, a position detector 500 and an illumination light source 510 are shown. The illumination light source 510 irradiates the illumination light in the visible light range, for example. Illumination light is irradiated onto the surface of the object 1, is reflected and incident on the position detector 500. However, if the optical axis of the illumination light is spaced apart from the optical axis of the laser beam, the relative position of the laser beam should be grasped in advance and the actual condensing position of the laser beam should be determined in consideration of this. This method requires a separate optical structure for guiding the illumination light to the processing object 1 and condensing it on the processing object 1, which can cause an increase in price and size of the device. In addition, processing errors may occur due to the relative positional difference between the illumination optical axis and the laser beam. In other words, the device providing the illumination light is manufactured as a separate unit from the processing laser device and mounted on the cutting device, so the relative position is not always constant, so the alignment work must be re-performed for each processing lot. Is reflected as a machining error, which may reduce machining accuracy and machining uniformity. In addition, the machining process may not be confirmed in real time through a monitor or the like, a problem may occur in which the machining yield is reduced.

In view of the above, the cutting device of this embodiment adopts a coaxial processing method of irradiating the object 1 with the illumination light and the processing laser beam through the same optical path.

Referring again to FIG. 1, there is shown a light path synthesizing member 102 for combining illumination light and laser beams into the same light path. The optical path combining member 102 may be, for example, a dichroic mirror having a property of reflecting or transmitting depending on the wavelength of incident light. The optical path combining member 102 of the present embodiment reflects the laser beam and transmits the illumination light. By such a configuration, the laser beam generated by the laser generator 100 is reflected by the reflecting mirror 101 and is incident on the optical path combining member 102, and is reflected back by the optical path combining member 102 to make the beam It enters the scanner 200 via the magnification optical unit 110 and the reflection mirror 103. The illumination light emitted from the illumination light source 510 passes through the optical path synthesis member 102 and enters the scanner 200 along the same optical path as the laser beam. The laser beam and the illumination light scanned by the scanner 200 are irradiated to the object 1 through the condenser lens 300.

The illumination light reflected from the surface of the object 1 is incident on the position detector 500 via the optical path combining member 102 in a direction opposite to the incident light path. The mirror 104 is, for example, a transflective mirror. Partly reflected illumination light emitted from the illumination light source 510 is incident to the optical path synthesis member 102. Light traveling backwards through the incident light path passes through the mirror 104 and is incident to the position detector 500. The position detector 500 may photograph the object 1 illuminated by illumination light using, for example, the CCD imaging device 501. The imaging device 501 generates photoelectrically converted photographing information, for example. The photographing information is converted into digitized image information by, for example, a frame grabber 502. The image processor 503 may extract a control image for control from the image information by performing a series of image processing processes such as noise filtering, tracing, and threshold. The position detector 500 may extract the position information of the interval 13 from the control image, and extract the coordinate values of the scheduled cutting line (FIG. 8: 21) which is a tracking reference of the laser beam therefrom. In the case of cutting, the position of the laser beam can also be confirmed in real time, thereby enabling feedback control.

The image photographed by the position detector 500 may be sent to the monitor 520 to provide a process to the operator as an image. As described above, the position of the illumination light and the illumination light focused on the surface of the object to be processed 1 are aligned with the coaxial laser beam is the same as the position of the laser beam. Therefore, realigning is not necessary for each processing lot, and thus the processing precision and the processing uniformity can be improved. In addition, since the machining status can be confirmed in real time through the monitor 520, the machining yield can be improved.

As described above, the shape of the gap 13 and the position of the laser beam may be confirmed through the position detector 500. The laser beam may be irradiated onto the support tape 20 by following the gap 13 by moving the scanner 200 and the stage 400 based on the identified shape of the gap 13 and the position of the laser beam. For example, referring to FIG. 7, the position detector 500 detects the shape of the interval 13 to calculate a target coordinate value to which the laser beam is to be moved. In addition, the position detector 500 calculates a current position coordinate value of the laser beam. The current position coordinate value serves as a feedback signal for moving the laser beam to a position designated by the target coordinate value. That is, the actual position coordinate value of the laser beam detected by the position detector 500 is reflected in the form of the current position coordinate value and is utilized as information for generating a control signal for moving the laser beam to the target coordinate value, thereby precisely controlling it. Is possible. The target coordinate value and the position coordinate value are transmitted to the processor unit 530. The processor unit 530 may include, for example, a central processing unit (CPU) and a memory in which various control information and a control program are stored. The central processing unit may be a digital signal procesor (DSP), for example. The processor unit 530 downloads a program from a memory, performs a control program, and generates a control signal for controlling the scanner 200 and the stage 400 based on the target coordinate value and the position coordinate value. The control signal may be a digital signal, for example. The control signal may be transmitted to the driver 540 through a digital-analog (DA) conversion process. The driving unit 540 may be, for example, the X-mirror motor 212, the Y-mirror motor 322, and a driving circuit unit for driving a stage motor for moving the stage 400 although not shown in the drawings. have. The driver 540 drives the scanner 200 and the stage 400 based on the input control signal so that the laser beam follows the shape of the interval 13 and irradiates to a desired position.

Hereinafter, the method of cutting the support tape 20 by the above-mentioned structure is demonstrated.

First, the wafer 10 to which the support tape 20 is attached is loaded onto the stage 400. The support tape 20 may be loaded into the stage 400 in a stretched state as shown in FIG. 4. When the stage 400 is provided with the clamp 40 and the stretching machine 50 as shown in FIG. 3, the wafer 10 with the supporting tape 20 attached to the stage 400 in the state before being stretched. Can be loaded. In this case, before the laser beam is irradiated onto the support tape 20, a process of extending the support tape 20 to widen the spacing 13 between the plurality of circuit elements 11 is performed. As shown in FIG. 3, when the drawing machine 50 is lifted from the back surface of the support tape 20 while the edge of the support tape 20 is clamped and fixed by the clamp 40, the support tape 20 is removed. As it increases, the distance 13 between the plurality of circuit elements 11 is widened. The surface of the support tape 20 is exposed through the gap 13, and a cut line 21 to follow the gap 13 is formed as shown in FIG. 8. The line to be cut 21 may be an imaginary line along the center portion of the gap 13 as an imaginary line that is not actually visible to which the laser beam should follow in order to cut the support tape 20.

The laser beam must follow the cut line 21 to be irradiated to the support tape 20. To this end, the position detector 500 acquires an image of the object to be processed 1 which is illuminated by the illumination light, and from this image is to be cut line 21 defined by the distance 13 between the plurality of circuit elements 11. ) Is determined. The position information of the scheduled cutting line 21 is transmitted to the processor unit 530, and the processor unit 530 generates a control signal for controlling the scanner 200 and the stage 400. Based on the control signal, the driving unit 540 drives the scanner 200 and the stage 400 to control the laser beam to follow the cutting line 21.

Cutting may be performed by driving the stage 400 and the scanner 200 based on the coordinate values for the cutting line 21. The method of cutting can vary widely, and an example is briefly described below.

As an example, the scanner 200 is positioned at the cutting start position by moving the laser beam in the X and Y directions. The stage 400 may be moved in the Y direction in FIG. 8. In addition, the scanner 200 may move the laser beam in the X direction according to the information of the scheduled cutting line 21 so that the laser beam follows the scheduled cutting line 21. Although not shown in the drawings, the stage 400 may be moved in the X direction. In addition, the scanner 200 may move the laser beam in the Y direction according to the information of the scheduled cutting line 21 so that the laser beam follows the scheduled cutting line 21. As such, the stage 400 may be moved in the first direction, and the scanner 200 may move the laser beam in a second direction perpendicular to the first direction so that the laser beam follows the scheduled line 21 to be cut. .

As an example, the stage 400 may be moved in the Y direction at a constant speed, and the scanner 200 may move the laser beam in the X direction and the Y direction so that the laser beam follows the cut line 21. In this case, the movement of the stage 400 serves to move the scan range of the scanner 200 (FIG. 5: Sx and Sy). Since the scanning speed of the scanner 200 is very fast compared to the moving speed of the stage 400, the cutting speed may be improved by such a configuration. In this case, the scanning speed of the scanner 200 is very fast compared to the moving speed of the stage 400, so that the scanner 200 has a plurality of cutting lines 21 to be present within the scanning range (Fig. 5: Sx, Sy). The laser beam can be moved in the X and Y directions to follow

When the laser beam is irradiated to the support tape 20, the ablation reaction occurs on the surface of the support tape 20 by the energy, and the reaction tape extends in the thickness direction of the support tape 20, thereby supporting the support tape 20. Can be cut.

By cutting the support tape 20 using the laser beam in this manner, precise and rapid cutting is possible even when the interval 13 is not constant after being stretched. In addition, it is possible to prevent the occurrence of chipping or warpage during the cutting process.

In the cutting process, the position detector 500 continuously acquires an image of the object to be processed 1 which is illuminated by the illumination light, and from this, the position to be cut 21 and the irradiation position of the laser beam to be cut according to the shape of the gap 13. Detect. The target coordinate value of the laser beam is continuously corrected based on the detected result, and the scanner 200 and the stage 400 are controlled based on the corrected control information. Therefore, precise cutting processing is possible. In addition, as the supporting tape 20 is cut in the cutting process, the position of the circuit element 11 may be changed again. According to the present embodiment, since the coaxial processing method is employed, the position information of the scheduled cutting line 21 and the position information of the laser beam may be fed back in real time without a relative error. Therefore, the precision and the processing yield of cutting can be improved further. In addition, the image photographed by the position detector 500 is provided to the operator in real time through the monitor 520. Thus, the operator can monitor the machining process in real time.

It is also possible to process at the same time using two or more laser beams. 9 shows an example of a supporting tape cutting device using two laser beams. 9, a beam splitter 105 and two scanners 200-1 and 200-2 are shown. The laser beam passing through the beam expanding optical unit 110 is split into two laser beams by the beam splitter 105. The beam splitter 105 may be a transflective mirror, for example. Part of the laser beam incident on the beam splitter 105 is reflected to enter the scanner 200-1, and part of the laser beam is transmitted to enter the scanner 200-2 through the reflection mirror 106. Since the structures of the scanners 200-1 and 200-2 are the same as those of the scanner 200 shown in FIG. 5, redundant descriptions thereof will be omitted. The two laser beams scanned by the scanners 200-1 and 200-2 are condensed at a predetermined position of the object 1 by the condenser lens 300. 9 illustrates an example of condensing two laser beams by using one condenser lens 300, but the scope of the present invention is not limited thereto, and two condenser lenses for condensing two laser beams, respectively. May be employed. In addition, although an example of dividing the laser beam irradiated from one laser generator 100 into two has been described in FIG. 9, two laser generators irradiating two laser beams may be employed. In addition, although an example of using two laser beams has been described with reference to FIG. 9, it is also possible to simultaneously process using three or more laser beams. The number of laser beams may be appropriately determined in consideration of the size of the apparatus, the size of the object to be processed, the processing efficiency, and the like.

The illumination light is also divided into two by the beam splitter 105 to illuminate the object 1 through the same optical path as the two laser beams.

According to the above configuration, since the cutting process can be performed by following the two cutting lines 21 to be cut at the same time using two laser beams, the processing speed can be improved. In addition, the illumination light can be improved because the coaxial processing method that is irradiated through the same optical path with the two laser beams is adopted.

Although a number of matters have been specifically described in the above description, they should be interpreted as examples of preferred embodiments rather than limiting the scope of the invention. Therefore, the scope of the present invention is not to be determined by the described embodiments but should be determined by the technical idea described in the claims.

1 ...... Processing object 10 ... Wafer
11 circuit elements 20 supporting tape
21 ... line to be cut 40 ... clamp
50 ... stretching machine 100 ... laser generator
101, 103, 106 ... reflective mirror 102 ... light path composite member
104 ... translucent mirror 105 ... beam splitter
200, 200-1, 200-2 ... Scanner 210 ... X-galvano mirror unit
211 ... X-reflective mirror 212 ... X-mirror motor
220 ... Y-galvanic mirror unit 221 ... Y-reflective mirror
222 Y-mirror 300 condenser lens
400 ... Stage 500 ... Position detector
501 Imaging Device 502 Frame Grabber
503.Image processing unit 510.Light source
520 monitor 530 processor unit
540 ... Drive

Claims (19)

A wafer having a supporting tape attached thereto is mounted on a rear surface of the stage, and the supporting tape is stretched to form a plurality of virtual cutting lines to expose the supporting tape between a plurality of circuit elements arranged two-dimensionally on the wafer. Doing;
And irradiating a laser beam to the support tape along the plurality of cutting lines to cause an ablation reaction on the surface of the support tape to cut the support tape. The method of claim 1, wherein the forming of the plurality of cutting lines is to be performed.
Clamping an edge of the support tape;
And extending the support tape from below from above to extend the support tape. The method of claim 1,
Providing illumination light coaxially with the optical axis of the laser beam;
Receiving the illumination light to obtain an image of the wafer and the support tape;
And extracting information of the scheduled cutting line from the obtained image. The method of claim 3,
And acquiring information about the position of the laser beam and the information about the scheduled cutting line and correcting the irradiation position of the laser beam during the cutting process. The method of claim 3,
And displaying an image of the wafer and the support tape through a monitor. The method of claim 4, wherein the cutting step,
Moving the stage in at least one of a first direction and a second direction orthogonal thereto, and scanning the laser beam in at least one of the first and second directions using a scanner; Cutting method. The method according to claim 6,
And cutting the support tape along two or more lines to be cut by scanning with two or more scanners using two or more laser beams. The method of claim 1,
The position of the laser beam and the position of the cutting line are detected using illumination light irradiated on the support tape coaxially with the laser beam, and based on the position of the detected laser beam and the position of the cutting line. And controlling the scanner to scan the stage and the laser beam such that the laser beam is irradiated along the scheduled cutting line. The method according to any one of claims 1 to 8,
And the laser beam is a pulsed laser beam having a wavelength of 150 nm or more and 560 nm or less. 10. The method of claim 9,
The pulse energy density of the said laser beam is 10J / cm <2> or more and 100J / cm <2>, the pulse length is 10ns or more and 100ns or less, and the spot size is 5 micrometers or more and 25 micrometers or less. A stage supporting the stretched support tape so that a plurality of cutting lines are formed between the plurality of circuit elements arranged two-dimensionally on the wafer, the stage being moved in at least one of a first direction and a second direction orthogonal thereto;
A laser generator for generating a laser beam;
And a scanner for moving the laser beam to follow the cut line.
And a support tape cutting device that causes an ablation reaction on the surface of the support tape to cut the support tape. The method of claim 11,
A clamper for clamping an edge of the support tape;
And a drawing unit which pushes and stretches the support tape from below to form a plurality of cutting lines to be exposed by the support tape between a plurality of circuit elements arranged two-dimensionally on the wafer. The method of claim 12,
And the clamper and the stretching portion are provided in the stage. The method of claim 11,
An illumination light source for providing illumination light;
An optical path synthesizing member for synthesizing the laser beam and the illumination light with the same optical path so as to match the illumination light with the optical axis of the laser beam;
A position detector which receives the illumination light and detects positions of the cutting line and the laser beam;
And a driving unit for driving the scanner and the stage based on the cutting schedule line detected by the position detector and the position information of the laser beam. 15. The method of claim 14,
In order to correct the position of the laser beam, the position detector is a support tape cutting device for obtaining the position of the laser beam and the information to be cut in the cutting process. 15. The method of claim 14,
And a monitor configured to display image information provided from the position detector. 15. The method of claim 14,
And a beam splitter dividing the laser beam into two laser beams.
And the scanner comprises two scanners corresponding respectively to the two or more laser beams. 18. The method according to any one of claims 11 to 17,
And the laser beam is a pulsed laser beam having a wavelength of 150 nm or more and 560 nm or less. 19. The method of claim 18,
The pulse energy density of the said laser beam is 10J / cm <2> or more and 100J / cm <2>, the pulse length is 10ns or more and 100ns or less, and the spot size is 5 micrometers or more and 25 micrometers or less.
KR1020110145033A 2011-12-28 2011-12-28 Apparatus and method of cutting tape supporting wafer KR101299236B1 (en)

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Publication number Priority date Publication date Assignee Title
KR20160004640A (en) * 2014-07-03 2016-01-13 주식회사 이오테크닉스 Method for marking wafer

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JP3624909B2 (en) 2002-03-12 2005-03-02 浜松ホトニクス株式会社 Laser processing method
JP2006229021A (en) * 2005-02-18 2006-08-31 Disco Abrasive Syst Ltd Wafer dividing method
KR101012332B1 (en) * 2008-07-18 2011-02-08 주식회사 티이피 Semiconductor wafer dicing system
KR101149594B1 (en) * 2010-06-01 2012-05-29 한국과학기술원 Method for cutting processing side using femtosecond pulse laser applied PZT element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160004640A (en) * 2014-07-03 2016-01-13 주식회사 이오테크닉스 Method for marking wafer
US10304778B2 (en) 2014-07-03 2019-05-28 Eo Technics Co., Ltd Wafer marking method

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