KR20130001977A - Filter having the metamaterial structure and manufacturing method of the same - Google Patents

Abstract

PURPOSE: A filter having a meta-material structure which is very flexible and a manufacturing method thereof are provided to control performance of a filter by adjusting the size of a mesh pattern and the thickness of a second dielectric layer of inverse patterns, thereby enhancing productivity. CONSTITUTION: A filter comprises a first dielectric layer(22), a second dielectric layer(24), a third dielectric layer(26), and a first mesh pattern(10). The first mesh pattern has first holes which partly exposes the first dielectric layer. The second dielectric layer covers the first mesh pattern and the first dielectric layer. Inverse patterns have the same shape as the first holes and are formed on the first dielectric layer above the holes. The third dielectric layer covers the inverse patterns and the second dielectric layer.

Description

Filter having the metamaterial structure and manufacturing method of the same

The present invention relates to a filter and a method for manufacturing the same, and more particularly, to a metamaterial having a metamaterial structure and a method for manufacturing the same.

Metamaterials can include artificial materials with periodic arrangements of artificial structures instead of atoms and molecules. Structures inside metamaterials can be much larger than molecules. Therefore, the path of electromagnetic waves passing through the metamaterial can be solved by the macroscopic Maxwell equation. On the other hand, structures inside the meta-material can have a size much smaller than the wavelength of the electromagnetic wave. Accordingly, the meta-material may include structures having a shape and size such that macroscopic material response characteristics are determined by the spectral components of the near-field region. These metamaterials are made of only traditional materials, such as conductors or semiconductors, and are arranged in very small repeating patterns to change their collective characteristics. Therefore, it is possible to handle electromagnetic waves in a way that cannot be achieved with ordinary materials.

On the other hand, the sensor for measuring the presence or concentration of the gas may include an electrochemical sensor, and an optical sensor. Optical sensors can have better performance than electrochemical sensors in accuracy, measurement speed, and durability. The optical sensor may include a narrowband transmission filter passing through only electromagnetic waves in a specific wavelength band and a detector. Narrow-band transmission filters can determine the performance and sensitivity of the optical sensor. The narrow band pass filter may include a multilayer thin film filter in which different types of dielectric layers are repeatedly stacked. Narrow-band filters have a disadvantage in that productivity is reduced because precise thickness control for each dielectric layer is not easy in the lamination process of the multilayer thin film filter.

The technical problem to be achieved by the present invention is to provide a filter having a metamaterial structure and a method of manufacturing the same that can increase or maximize productivity.

In addition, another object of the present invention is to provide a filter having a flexible metamaterial structure and a method of manufacturing the same.

In order to achieve the above technical problem, the filter of the present invention, the first dielectric layer; A first mesh pattern having at least one first hole that partially exposes the first dielectric layer; A second dielectric layer covering the first mesh patterns and the first dielectric layer: reverse phase patterns having the same shape as the first holes and formed on the first dielectric layer over the holes; And a third dielectric layer covering the reversed phase patterns and the second dielectric layer.

According to an embodiment of the present invention, the first holes and the reverse pattern may have the same size.

According to another embodiment of the present invention, the first holes and the reverse pattern may have the same shape of at least one of a rectangle or a circle.

According to an embodiment of the present invention, the first net pattern and the reverse phase pattern may include at least one metal of gold, chromium, silver, aluminum, copper, and nickel.

According to another embodiment of the present invention, the first to third dielectric layers may include polyimide.

According to an embodiment of the present invention, the first to third dielectric layers may include a metal dielectric or an inorganic dielectric of at least one of an aluminum oxide film, a silicon oxide film, a titanium oxide film, or a magnesium fluoride film.

According to another embodiment of the present invention, there is provided a semiconductor device comprising: a second mesh pattern having second holes exposing the first holes and the third dielectric layer over the reversed patterns; And a fourth dielectric layer covering the second mesh pattern and the third dielectric layer.

According to an embodiment of the present invention, the second holes may be aligned with the first holes and the reverse pattern.

According to another embodiment of the present invention, the third dielectric layer may have the same thickness as the second dielectric layer.

According to another aspect of the present invention, there is provided a method of manufacturing a filter, comprising: forming a first dielectric layer on a substrate; Forming a first mesh pattern having at least one first hole exposing a portion of the first dielectric layer; Forming a second dielectric layer covering the first mesh pattern; Forming an inverted pattern having the same shape as the first hole on the second dielectric layer; Covering a third dielectric layer over said reversed pattern and said second dielectric layer; And separating the substrate from the first dielectric layer.

According to an embodiment of the present invention, forming a second mesh pattern having second holes exposing the first holes and the third dielectric layer over the reversed pattern; And forming a fourth dielectric layer covering the second mesh pattern and the third dielectric layer.

According to another embodiment of the present invention, the first and second mesh patterns and the reversed phase pattern may be formed by an inkjet printing method.

According to an embodiment of the present invention, the first to fourth dielectric layers may be formed by a spin coating method.

As described above, according to the exemplary configuration of the present invention, the mesh pattern and the reversed phase patterns may be spaced apart by the second dielectric layer. The distance between the mesh pattern and the reversed phase patterns may correspond to the thickness of the second dielectric layer. Dielectric layers, mesh patterns, and reverse patterns may be metamaterial structures. The dielectric layers may comprise polyimide that is highly flexible. Therefore, the filter according to the embodiment of the present invention has an effect that can have a flexible metamaterial structure. In addition, the manufacturing method of the filter according to the embodiment of the present invention can increase or maximize productivity because only the size adjustment of the mesh pattern and the thickness of the second dielectric layer between the reverse phase patterns are required to control the operation characteristics of the filter. It has an effect.

1 is a perspective view showing a filter according to an embodiment of the present invention.
2 is a plan view of Fig.
3 is a graph showing transmittance according to the frequency of terahertz electromagnetic waves.
4 is a graph showing the change in transmittance according to the change in thickness of the second dielectric layer.
5 is a perspective view showing a filter according to an application of the present invention.
6 to 14 are process perspective views showing a method of manufacturing a filter according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention and the manner of achieving them will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein but may be embodied in different forms. Rather, the embodiments disclosed herein are provided so that the disclosure can be thorough and complete, and will fully convey the concept of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. As used herein, the terms 'comprises' and / or 'comprising' mean that the stated element, step, operation and / or element does not imply the presence of one or more other elements, steps, operations and / Or additions. In addition, since they are in accordance with the preferred embodiment, the reference numerals presented in the order of description are not necessarily limited to the order.

1 is a perspective view showing a filter according to an embodiment of the present invention. 2 is a plan view of Fig. 3 is a graph showing transmittance according to the frequency of terahertz electromagnetic waves.

1 to 3, a filter according to an embodiment of the present invention includes a first mesh pattern 10 having first holes 12 and reverse phase patterns having the same shape as the first holes 12. 30, and a second dielectric layer 24 formed between the reversed phase patterns 30 and the first mesh patterns 10. The first and third dielectric layers 22 and 26 may cover the first mesh patterns 10 and the reverse patterns 30. The first mesh patterns 10 and the reversed phase patterns 30 may include a conductive metal. The electromagnetic wave 50 may first be incident on either the first dielectric layer 22 or the third dielectric layer 26. The electromagnetic wave 50 may have a frequency in the terahertz band. The first mesh pattern 10 may correspond to a pain and high-pass frequency selective surface having a transmission constant of 0.5 or more for electromagnetic waves 50 of 1 terahertz or more. Reversed phase patterns 30 may correspond to a low-pass frequency selective surface having a transmission constant of at least 0.5 for electromagnetic waves 50 of 1 terahertz or less. Permeation constants range from 0 to 1.

The filter according to the embodiment of the present invention may have a metamaterial structure having a transmission constant of about 0.6 or more with respect to the electromagnetic wave 50 of about 1.2 terahertz band. 3 represents the frequency of the terahertz electromagnetic wave 50, and the vertical axis represents the magnitude of the transmission constant.

The dielectric layers 20 may include a polymer such as polyimide having excellent transparency and flexibility. In addition, the dielectric layers 20 may include a metal dielectric or an inorganic dielectric of at least one of an aluminum oxide film, a silicon oxide film, a titanium oxide film, or a magnesium fluoride film. The second dielectric layer 24 may adjust a gap between the first mesh pattern 10 and the reverse phase pattern 30.

The first mesh pattern 10 and the reverse phase patterns 30 may have a thickness of about 100 nm. The first mesh pattern 10 and the reverse phase patterns 30 may include at least one metal layer of gold, chromium, silver, aluminum, copper, and nickel. The first holes 12 and the reversed phase patterns 30 of the first mesh pattern 10 may have the same shape of at least one of a rectangle and a circle. In addition, the first holes 12 and the reverse patterns 30 may have the same size.

The unit cell 60 may include one ring in the first mesh pattern 10 and an inverted phase pattern 30 above the first hole 12 in the ring. The transmission frequency of the electromagnetic wave 50 may be determined according to the area of the unit cell 60 and the distance between the first network pattern 10 and the reverse phase pattern 30. For example, the unit cell 60 may have a size of about 40 × 40 μm ² . The first mesh pattern 10 and the reverse phase patterns 30 may be spaced apart by about 5 μm by the second dielectric 24.

4 is a graph showing the change in transmittance according to the change in thickness of the second dielectric layer.

1 and 4, when the second dielectric layer 24 is thinned, the transmission frequency may be increased and the transmission band width to be filtered may be increased. 4, the horizontal axis represents the frequency of the terahertz electromagnetic wave 50, and the vertical axis represents the magnitude of the transmission constant. For example, a filter having a second dielectric layer 24 of 10 μm thickness may transmit a frequency of about 1.15 THz. A filter having a second dielectric layer 24 having a thickness of 5 μm can transmit a frequency of about 1.3 THz. A filter with a second dielectric layer 24 of 2.5 μm thickness can transmit a frequency of about 1.4 THz. Therefore, when the distance between the first mesh pattern 10 and the reverse pattern 30 is reduced, the transmission frequency and the transmission constant may be increased.

5 is a perspective view showing a filter according to an application of the present invention.

Referring to FIG. 5, a filter according to an application of the present invention includes a second mesh pattern 40 formed on a third dielectric layer 26 having second holes 42 aligned from reversed phase patterns 30. The second dielectric layer 40 may include a fourth dielectric layer covering the second mesh pattern 40 and the third dielectric layer 26. The fourth dielectric layer 28 may comprise the same polyimide, metal dielectric, or inorganic dielectric as the first through third dielectric layers 22, 24, 26. The third dielectric layer 26 may have the same thickness as the second dielectric layer 24. The second holes 42 may have the same size as the first holes 12. The second holes 42 may be aligned in a direction parallel to the first holes 12 and the reverse patterns 30. The second mesh pattern 40 may have the same thickness as the first mesh pattern 10.

The second mesh pattern 40 may include the same metal layer as the first mesh pattern 10 and the reverse phase patterns 30. The first and second mesh patterns 10 and 40 may be symmetrically formed with respect to the reversed pattern 30. In addition, the third dielectric layer 26 may adjust a gap between the reversed phase patterns 30 and the second mesh pattern 40. The third dielectric layer 26 may have the same thickness as the second dielectric layer 24. The electromagnetic wave 50 may be incident to the first dielectric layer 22 or the fourth dielectric layer 28.

Accordingly, the filter according to the application of the present invention may have a symmetrical structure with respect to the first and second mesh patterns 10 and 40 above and below the reverse phase pattern 30.

The manufacturing method of the filter according to the embodiment and the application of the present invention configured as described above will be described with reference to the drawings.

6 to 14 are process perspective views showing a method of manufacturing a filter according to an embodiment of the present invention.

Referring to FIG. 6, the first dielectric layer 22 is formed on the substrate 21. The substrate 21 may include a silicon wafer. The first dielectric layer 22 may include polyimide formed by spin coating. In addition, the first dielectric layer 22 may include at least one metal dielectric or inorganic dielectric of an aluminum oxide film, a silicon oxide film, a titanium oxide film, or a magnesium fluoride film formed by a chemical vapor deposition method or a physical vapor deposition method.

Referring to FIG. 7, a first mesh pattern 10 is formed on the first dielectric layer. The first mesh pattern 10 may be formed by an inkjet printing method of the first metal layer. In addition, the first mesh pattern 10 may be formed by a lift-off process of the first metal layer formed on the first photoresist pattern (not shown). The first photoresist pattern may be formed by a photolithography process. The first metal layer may include at least one of gold, chromium, silver, aluminum, copper, and nickel formed by an electron beam deposition method.

Referring to FIG. 8, a second dielectric layer 24 is formed on the first mesh pattern 10 and the first dielectric layer 22. The second dielectric layer 24 may comprise a polymer such as polyimide formed by spin coating. In this case, the thickness of the second dielectric layer 24 may be controlled by the rotation speed of the substrate 21 in the spin coating method. In addition, the second dielectric layer 24 may include a metal dielectric or an inorganic dielectric formed by a chemical vapor deposition method or a physical vapor deposition method. The second dielectric layer 24 may be adjusted in thickness from the deposition rate in the chemical vapor deposition method or the physical vapor deposition method.

Referring to FIG. 9, reverse phase patterns 30 are formed on the second dielectric layer 24 over the first holes 12. The reversed phase patterns 30 may be formed by an inkjet printing method. In addition, the reversed phase patterns 30 may be formed by a lift-off process of the second metal layer formed on the photoresist pattern. The second metal layer may be formed by an electron beam deposition method. The second metal layer may comprise at least one of gold, chromium, silver, aluminum, copper, and nickel. The first mesh pattern 10 and the reverse phase pattern 30 may be formed alternately with the first and second dielectric layers 22 and 24. The first mesh pattern 10 and the reversed phase patterns 30 may be spaced apart by the second dielectric layer 24. In this case, the distance between the first mesh pattern 10 and the reverse phase patterns 30 may be easily adjusted by forming the second dielectric layer 24. Therefore, the manufacturing method of the filter according to the embodiment of the present invention can increase or maximize productivity.

10 and 13, a third dielectric layer 26 is formed on the reverse phase patterns 30 and the second dielectric layer 24. The third dielectric layer 26 may be formed by a spin coating method, a chemical vapor deposition method, or a physical vapor deposition method. The third dielectric layer 26 may be formed to the same thickness as the second dielectric layer 24. After formation of the third dielectric layer 26, the substrate 21 and the first dielectric layer 22 may be separated. The substrate 21 may be crushed. Accordingly, the method of manufacturing the filter according to the exemplary embodiment of the present invention may include separating the first dielectric layer 22 after the formation of the third dielectric layer 26 covering the reverse phase pattern 30.

Referring to FIG. 11, a second mesh pattern 40 having first holes 12 and second holes 42 exposing the third dielectric layer 26 over the reverse phase patterns 30 is formed. . The second mesh pattern 40 may include a third metal layer formed by the same inkjet printing method or the lift-off process as the first mesh pattern 40. The third metal layer may be the same as the first metal layer. The second holes 42 may have the same size as the first holes 12. The second holes 42 may be aligned in a direction parallel to the first holes 12 and the reverse patterns 30. Here, the third dielectric layer 26 may adjust the gap between the reversed phase patterns 30 and the second mesh pattern 40. The third dielectric layer 26 may be formed to the same thickness as the second dielectric layer 24.

Referring to FIG. 12, a fourth dielectric layer 28 is formed on the second mesh pattern 40 and the third dielectric layer 26. The fourth dielectric layer 28 may be formed by a spin coating method, a chemical vapor deposition method, or a physical vapor deposition method.

5 and 13, the substrate 21 is separated from the first dielectric layer 22. Dielectric layers 20 may have excellent flexibility. The first and second mesh patterns 10 and 40, the reverse phase patterns 30, and the dielectric layers 20 may have a metamaterial structure. The gap between the reversed phase patterns 30 and the first and second mesh patterns 10 and 40 may be easily adjusted by forming the second and third dielectric layers 24 and 26.

Therefore, the manufacturing method of the filter according to the application of the present invention can increase or maximize productivity.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood. It is therefore to be understood that the above-described embodiments are illustrative and non-restrictive in every respect.

10: first mesh pattern 20: dielectric layers
30: reversed pattern 40: second network patterns

Claims (13)

A first dielectric layer;
A first mesh pattern having at least one first hole that partially exposes the first dielectric layer;
A second dielectric layer covering the first mesh patterns and the first dielectric layer:
Reverse phase patterns having the same shape as the first holes and formed on the first dielectric layer above the holes; And
And a third dielectric layer covering the reversed phase patterns and the second dielectric layer. The method of claim 1,
The first holes and the reversed phase pattern have the same size. The method of claim 2,
The first holes and the reverse patterns have the same shape of at least one of a rectangle and a circle. Having a filter. The method of claim 3, wherein
And the first mesh pattern and the reverse phase pattern include at least one metal of gold, chromium, silver, aluminum, copper, and nickel. The method of claim 4, wherein
And the first to third dielectric layers comprise polyimide. The method of claim 4, wherein
And the first to third dielectric layers include a metal dielectric or an inorganic dielectric of at least one of aluminum oxide, silicon oxide, titanium oxide, or magnesium fluoride. The method of claim 4, wherein
A second mesh pattern having second holes exposing the first holes and the third dielectric layer over the reversed patterns; And
And a fourth dielectric layer covering the second mesh pattern and the third dielectric layer. The method of claim 7, wherein
And the second holes are aligned with the first holes and the reversed patterns. The method of claim 8,
And the third dielectric layer has the same thickness as the second dielectric layer. Forming a first dielectric layer on the substrate;
Forming a first mesh pattern having at least one first hole exposing a portion of the first dielectric layer;
Forming a second dielectric layer covering the first mesh pattern;
Forming an inverted pattern having the same shape as the first hole on the second dielectric layer;
Covering a third dielectric layer over said reversed pattern and said second dielectric layer; And
Separating the substrate from the first dielectric layer. 11. The method of claim 10,
Forming a second mesh pattern having second holes exposing the first holes and the third dielectric layer over the reversed patterns; And
And forming a fourth dielectric layer covering the second mesh pattern and the third dielectric layer. The method of claim 11,
And the first and second mesh patterns and the reversed phase pattern are formed by an inkjet printing method. 13. The method of claim 12,
And the first to fourth dielectric layers are formed by a spin coating method.

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