KR20110140097A - 화학 증착용 유기 루테늄 화합물 및 그 유기 루테늄 화합물을 사용한 화학 증착방법 - Google Patents
화학 증착용 유기 루테늄 화합물 및 그 유기 루테늄 화합물을 사용한 화학 증착방법 Download PDFInfo
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- KR20110140097A KR20110140097A KR1020110061023A KR20110061023A KR20110140097A KR 20110140097 A KR20110140097 A KR 20110140097A KR 1020110061023 A KR1020110061023 A KR 1020110061023A KR 20110061023 A KR20110061023 A KR 20110061023A KR 20110140097 A KR20110140097 A KR 20110140097A
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- Prior art keywords
- isomer
- compound
- ruthenium compound
- organic ruthenium
- vapor deposition
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- 150000003304 ruthenium compounds Chemical class 0.000 title claims abstract description 62
- 238000000034 method Methods 0.000 title claims description 21
- 238000005229 chemical vapour deposition Methods 0.000 title claims description 20
- 150000001875 compounds Chemical class 0.000 claims abstract description 51
- 239000010409 thin film Substances 0.000 claims abstract description 28
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000012495 reaction gas Substances 0.000 claims abstract description 16
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 16
- 239000000126 substance Substances 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 239000002994 raw material Substances 0.000 claims description 5
- 239000010408 film Substances 0.000 abstract description 22
- 230000015572 biosynthetic process Effects 0.000 abstract description 16
- 238000006243 chemical reaction Methods 0.000 abstract description 14
- 230000008016 vaporization Effects 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 238000005234 chemical deposition Methods 0.000 abstract 3
- 239000007788 liquid Substances 0.000 description 32
- 238000000425 proton nuclear magnetic resonance spectrum Methods 0.000 description 25
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 24
- 238000005259 measurement Methods 0.000 description 16
- 239000001257 hydrogen Substances 0.000 description 13
- 229910052739 hydrogen Inorganic materials 0.000 description 13
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 11
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 10
- GKIRPKYJQBWNGO-OCEACIFDSA-N clomifene Chemical compound C1=CC(OCCN(CC)CC)=CC=C1C(\C=1C=CC=CC=1)=C(\Cl)C1=CC=CC=C1 GKIRPKYJQBWNGO-OCEACIFDSA-N 0.000 description 9
- SYSQUGFVNFXIIT-UHFFFAOYSA-N n-[4-(1,3-benzoxazol-2-yl)phenyl]-4-nitrobenzenesulfonamide Chemical class C1=CC([N+](=O)[O-])=CC=C1S(=O)(=O)NC1=CC=C(C=2OC3=CC=CC=C3N=2)C=C1 SYSQUGFVNFXIIT-UHFFFAOYSA-N 0.000 description 9
- 238000001308 synthesis method Methods 0.000 description 9
- 238000004458 analytical method Methods 0.000 description 8
- 239000002904 solvent Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 238000000746 purification Methods 0.000 description 7
- 238000005160 1H NMR spectroscopy Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000004440 column chromatography Methods 0.000 description 5
- VMDTXBZDEOAFQF-UHFFFAOYSA-N formaldehyde;ruthenium Chemical compound [Ru].O=C VMDTXBZDEOAFQF-UHFFFAOYSA-N 0.000 description 5
- 239000003960 organic solvent Substances 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical group N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 125000001434 methanylylidene group Chemical group [H]C#[*] 0.000 description 4
- KHZGUWAFFHXZLC-UHFFFAOYSA-N 5-methylhexane-2,4-dione Chemical compound CC(C)C(=O)CC(C)=O KHZGUWAFFHXZLC-UHFFFAOYSA-N 0.000 description 3
- 238000005481 NMR spectroscopy Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 3
- 239000003446 ligand Substances 0.000 description 3
- 238000004949 mass spectrometry Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- YAYGSLOSTXKUBW-UHFFFAOYSA-N ruthenium(2+) Chemical compound [Ru+2] YAYGSLOSTXKUBW-UHFFFAOYSA-N 0.000 description 3
- 239000000741 silica gel Substances 0.000 description 3
- 229910002027 silica gel Inorganic materials 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000003480 eluent Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- SJYNFBVQFBRSIB-UHFFFAOYSA-N norbornadiene Chemical compound C1=CC2C=CC1C2 SJYNFBVQFBRSIB-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- RRKODOZNUZCUBN-CCAGOZQPSA-N (1z,3z)-cycloocta-1,3-diene Chemical compound C1CC\C=C/C=C\C1 RRKODOZNUZCUBN-CCAGOZQPSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000001993 dienes Chemical class 0.000 description 1
- 125000005594 diketone group Chemical group 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000013213 extrapolation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000000445 field-emission scanning electron microscopy Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- -1 organometallic ruthenium compound Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000013558 reference substance Substances 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/0006—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table compounds of the platinum group
- C07F15/0046—Ruthenium compounds
- C07F15/0053—Ruthenium compounds without a metal-carbon linkage
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
도 2는 제1 실시형태의 유기 루테늄 화합물의 1H-NMR 스펙트럼 확대도이다.
도 3은 이성체 A의 X선 결정구조 해석결과의 도면(제1 실시형태)이다.
도 4는 이성체 1~3의 혼합으로 얻어진 화합물의 성상을 나타내는 삼각도(제1 실시형태)이다.
도 5는 제1 실시형태의 유기 루테늄 화합물의 열질량 분석(TG)의 결과도이다.
도 6은 제2~제4 실시형태의 유기 루테늄 화합물의 1H-NMR 스펙트럼의 확대도이다.
Claims (3)
- 제1항에 있어서,
이성체 2의 함유율이 40 질량% 이상이고, 이성체 3의 함유율이 20 질량% 이하이며, 잔부가 이성체 1인 유기 루테늄 화합물. - 원료 화합물이 되는 유기 루테늄 화합물을 기화하여 반응가스로 하고, 상기 반응가스를 기판 표면에 도입하면서 가열하는 루테늄 박막 또는 루테늄 화합물 박막의 화학 증착법에 있어서,
상기 유기 루테늄 화합물로서 제1항 또는 제2항에 기재된 유기 루테늄 화합물을 사용하는 화학 증착법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2010143391A JP4746141B1 (ja) | 2010-06-24 | 2010-06-24 | 化学蒸着用の有機ルテニウム化合物及び該有機ルテニウム化合物を用いた化学蒸着方法 |
JPJP-P-2010-143391 | 2010-06-24 |
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KR20110140097A true KR20110140097A (ko) | 2011-12-30 |
KR101337147B1 KR101337147B1 (ko) | 2013-12-05 |
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KR1020110061023A KR101337147B1 (ko) | 2010-06-24 | 2011-06-23 | 화학 증착용 유기 루테늄 화합물 및 그 유기 루테늄 화합물을 사용한 화학 증착방법 |
Country Status (5)
Country | Link |
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US (1) | US8642796B2 (ko) |
EP (1) | EP2399923B1 (ko) |
JP (1) | JP4746141B1 (ko) |
KR (1) | KR101337147B1 (ko) |
TW (1) | TWI486475B (ko) |
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JP6114525B2 (ja) * | 2011-11-04 | 2017-04-12 | 東京エレクトロン株式会社 | 酸化ルテニウム膜の成膜方法 |
JP5432332B2 (ja) * | 2012-06-07 | 2014-03-05 | 田中貴金属工業株式会社 | 化学蒸着用の有機ルテニウム化合物のリサイクル方法 |
JP5984624B2 (ja) | 2012-10-29 | 2016-09-06 | 田中貴金属工業株式会社 | β−ジケトン化合物からの非対称β−ジケトン化合物の抽出方法 |
JP6118149B2 (ja) | 2013-03-21 | 2017-04-19 | 東京エレクトロン株式会社 | ルテニウム膜の形成方法および記憶媒体 |
US10167304B2 (en) | 2013-12-20 | 2019-01-01 | Adeka Corporation | Ruthenium compound, material for thin film formation, and process for thin film formation |
WO2017009948A1 (ja) * | 2015-07-14 | 2017-01-19 | リサーチ コーオペレーション ファウンデーション オブ ヨンナム ユニバーシティ | 原子層蒸着法によるルテニウム薄膜の形成方法 |
WO2017009947A1 (ja) * | 2015-07-14 | 2017-01-19 | リサーチ コーオペレーション ファウンデーション オブ ヨンナム ユニバーシティ | 原子層蒸着法によるルテニウム薄膜の形成方法 |
US11101274B2 (en) | 2019-12-05 | 2021-08-24 | Micron Technology, Inc. | Ferroelectric capacitor, a ferroelectric memory cell, an array of ferroelectric memory cells, and a method of forming a ferroelectric capacitor |
TWI762168B (zh) | 2020-01-31 | 2022-04-21 | 日商田中貴金屬工業股份有限公司 | 包含有機釕化合物之化學蒸鍍用原料及使用該化學蒸鍍用原料之化學蒸鍍法 |
US11913110B2 (en) | 2020-01-31 | 2024-02-27 | Tanaka Kikinzoku Kogyo K.K. | Raw material for chemical deposition containing organoruthenium compound, and chemical deposition method using the raw material for chemical deposition |
TWI789848B (zh) | 2020-08-04 | 2023-01-11 | 嶺南大學校產學協力團 | 釕薄膜之形成方法 |
JP7505376B2 (ja) * | 2020-11-09 | 2024-06-25 | 東京エレクトロン株式会社 | ルテニウム膜を成膜する方法及び装置 |
JP7075518B1 (ja) | 2021-03-10 | 2022-05-25 | 田中貴金属工業株式会社 | 有機ルテニウム化合物を含む化学蒸着用原料及びルテニウム薄膜又はルテニウム化合物薄膜の化学蒸着法 |
JP2023178560A (ja) * | 2022-06-06 | 2023-12-18 | 嶺南大學校 産學協力團 | 化学蒸着法によるルテニウム薄膜又はルテニウム化合物薄膜の製造方法及びルテニウム薄膜又はルテニウム化合物薄膜 |
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US6303809B1 (en) * | 1999-12-10 | 2001-10-16 | Yun Chi | Organometallic ruthenium and osmium source reagents for chemical vapor deposition |
JP4097979B2 (ja) * | 2002-04-18 | 2008-06-11 | 田中貴金属工業株式会社 | Cvd用原料化合物及びルテニウム又はルテニウム化合物薄膜の化学気相蒸着方法 |
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2010
- 2010-06-24 JP JP2010143391A patent/JP4746141B1/ja active Active
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2011
- 2011-06-15 US US13/161,012 patent/US8642796B2/en active Active
- 2011-06-16 TW TW100121000A patent/TWI486475B/zh active
- 2011-06-23 EP EP11171137.0A patent/EP2399923B1/en active Active
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Publication number | Publication date |
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US8642796B2 (en) | 2014-02-04 |
JP4746141B1 (ja) | 2011-08-10 |
TWI486475B (zh) | 2015-06-01 |
US20110318488A1 (en) | 2011-12-29 |
EP2399923B1 (en) | 2014-08-27 |
JP2012006858A (ja) | 2012-01-12 |
KR101337147B1 (ko) | 2013-12-05 |
TW201211301A (en) | 2012-03-16 |
EP2399923A1 (en) | 2011-12-28 |
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